JPH0318367B2 - - Google Patents
Info
- Publication number
- JPH0318367B2 JPH0318367B2 JP19842182A JP19842182A JPH0318367B2 JP H0318367 B2 JPH0318367 B2 JP H0318367B2 JP 19842182 A JP19842182 A JP 19842182A JP 19842182 A JP19842182 A JP 19842182A JP H0318367 B2 JPH0318367 B2 JP H0318367B2
- Authority
- JP
- Japan
- Prior art keywords
- grooves
- substrate
- thin film
- inorganic photosensitive
- surface wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 14
- 238000010897 surface acoustic wave method Methods 0.000 description 14
- 239000013078 crystal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000006089 photosensitive glass Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
【発明の詳細な説明】
技術分野
本発明は表面波装置に関し、より詳しくは、無
機質感光性基板を露光および現像処理して無機質
感光性基板の表面を伝播する弾性表面波の反射器
を形成するようにした弾性表面波装置に関するも
のである。Detailed Description of the Invention Technical Field The present invention relates to a surface wave device, and more particularly, an inorganic photosensitive substrate is exposed and developed to form a reflector for surface acoustic waves propagating on the surface of the inorganic photosensitive substrate. The present invention relates to a surface acoustic wave device as described above.
従来技術
圧電物質の表面にすだれ状電極を有する弾性表
面波(以下、単に表面波と記す。)装置は、
VHF、UHF領域において、構造が簡単で、小
形、低損失であるという利点を有する優れた電気
通信回路装置であり、その実用化が極めて有望視
されている。Prior Art A surface acoustic wave (hereinafter simply referred to as surface wave) device having interdigital electrodes on the surface of a piezoelectric material is
In the VHF and UHF regions, it is an excellent telecommunications circuit device that has the advantages of simple structure, small size, and low loss, and its practical application is considered extremely promising.
従来より、この種の表面波装置としては、たと
えば第1図に示すように、水晶あるいはLi Nb
O3のような圧電結晶基板11の表面上に表面波
送・受波用すだれ状電極12を形成し、その両側
に表面波反射器13,14を形成したものが一般
に知られている。 Traditionally, surface wave devices of this type have been made using quartz crystal or LiNb, as shown in Figure 1, for example.
It is generally known that a transducer-like electrode 12 for surface wave transmission/reception is formed on the surface of a piezoelectric crystal substrate 11 such as O 3 , and surface wave reflectors 13 and 14 are formed on both sides thereof.
上記表面波反射器13,14は圧電結晶基板1
1の表面に周期的に溝を設けたり、金属もしくは
誘電体の格子状薄膜を周期的に付着することによ
り、上記圧電結晶基板11の表面上で音響インピ
ーダンスを周期的に変化させて、表面波の反射を
行う。 The surface wave reflectors 13 and 14 are piezoelectric crystal substrates 1
By periodically providing grooves on the surface of the piezoelectric crystal substrate 11 or periodically attaching a lattice-like thin film of metal or dielectric material, the acoustic impedance is periodically changed on the surface of the piezoelectric crystal substrate 11, and surface waves are generated. perform the reflection.
圧電結晶基板11の表面に上記のような溝を設
けるには、イオンエツチング等の装置を用いて選
択的に上記圧電結晶基板11の表面を削つて得て
いる。このようにして圧電結晶基板11に溝を形
成するには大規模なイオンエツチング装置が必要
で、しかも、このイオンエツチング処理に多大の
時間を費やすという欠点を有する。さらに、溝を
形成する工程は、すだれ状電極12の形成工程と
異なるため、二度の微細パターン作製工程におけ
る目合せ誤差により、すだれ状電極12と反射器
13,14の相対位置ずれが発生する。従つて損
失が増大して共振特性が劣化し好しくない。 In order to provide the above grooves on the surface of the piezoelectric crystal substrate 11, the surface of the piezoelectric crystal substrate 11 is selectively etched using a device such as ion etching. Forming grooves in the piezoelectric crystal substrate 11 in this manner requires a large-scale ion etching apparatus, and has the drawback that this ion etching process requires a large amount of time. Furthermore, since the process of forming the grooves is different from the process of forming the interdigital electrodes 12, relative positional deviation between the interdigital electrodes 12 and the reflectors 13 and 14 occurs due to alignment errors in the second fine pattern manufacturing process. . Therefore, loss increases and resonance characteristics deteriorate, which is undesirable.
一方、誘電体の格子形被膜による表面波反射器
13,14は、通常、良好な反射効率を得るた
め、密度、もしくは弾性定数が、基板材料と大幅
に異なる薄膜材料を選択し、これを真空蒸着もし
くはスパツタリングで成膜し、その後、フオトエ
ツチングの手法で所望の格子状にエツチングして
形成する。この場合も、上記の溝形の表面波反射
器と同様、表面波反射器13,14はすだれ状電
極12と形成工程を異にすることから発生する欠
点を有する。 On the other hand, surface wave reflectors 13 and 14 using dielectric lattice coatings usually select a thin film material whose density or elastic constant is significantly different from that of the substrate material in order to obtain good reflection efficiency. A film is formed by vapor deposition or sputtering, and then etched into a desired lattice shape using a photoetching method. In this case as well, similar to the groove-shaped surface wave reflector described above, the surface wave reflectors 13 and 14 have drawbacks due to the fact that the formation process is different from that of the interdigital interdigital electrode 12.
さらに、Li Nb O3のように圧電性の大きい基
板に対しては、表面波反射器13,14に金属薄
膜が用いられる。しかしながら、Li Nb O3は温
度安定度が悪く、これを用いた弾性波装置は実用
性に欠ける問題があつた。 Furthermore, for a highly piezoelectric substrate such as LiNbO3 , a metal thin film is used for the surface wave reflectors 13 and 14. However, Li Nb O 3 has poor temperature stability, and an elastic wave device using it has a problem of lack of practicality.
発明の目的
本発明は上記事情に鑑みてなされたものであつ
て、その目的は、無機質感光性基板を露光および
現像処理して表面波の反射用の溝を形成すること
により、表面波反射器の形成を容易にし、表面波
装置の製造の簡単化と特性の向上を図ることであ
る。Purpose of the Invention The present invention has been made in view of the above circumstances, and an object thereof is to form a surface wave reflector by exposing and developing an inorganic photosensitive substrate to form grooves for reflecting surface waves. The object of the present invention is to facilitate the formation of surface acoustic wave devices, thereby simplifying the manufacturing of surface acoustic wave devices and improving their characteristics.
発明の要旨
このため、本発明は、平板状の無機質感光性基
板の主面の一部に圧電薄膜と、少なくとも一組の
インターデイジタル電極を形成する一方、上記圧
電薄膜の両側の無機質感光性基板を露光および現
像処理して互いにほぼ平行する複数本の溝からな
る表面波反射器を形成したことを特徴としてい
る。SUMMARY OF THE INVENTION Therefore, the present invention provides a method for forming a piezoelectric thin film and at least one set of interdigital electrodes on a part of the main surface of a flat inorganic photosensitive substrate, while forming an inorganic photosensitive substrate on both sides of the piezoelectric thin film. It is characterized in that a surface wave reflector consisting of a plurality of grooves substantially parallel to each other is formed by exposing and developing.
実施例
以下、添付図面を参照して本発明の実施例を説
明する。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
第2図において、21は無機質感光性基板、2
2は圧電薄膜、23は表面波送・受波用のすだれ
状のインターデイジタル電極、24,25は表面
波反射器である。 In FIG. 2, 21 is an inorganic photosensitive substrate;
2 is a piezoelectric thin film, 23 is a blind-shaped interdigital electrode for transmitting and receiving surface waves, and 24 and 25 are surface wave reflectors.
上記無機質感光性基板21は、たとえば、感光
性のガラスからなり、露光するとその部分が変色
し、変色部分が弗化水素酸等の現像液に溶けやす
くなる。 The inorganic photosensitive substrate 21 is made of, for example, photosensitive glass, and when exposed to light, that portion changes color, and the discolored portion becomes easily soluble in a developer such as hydrofluoric acid.
上記無機質感光性基板21は長方形状を有し、
その一方の主面の中央部に、Zn OもしくはAlN
等の圧電材料からなる四角形状の圧電薄膜22を
形成し、その上にインターデイジタル電極23を
フオトエツチングあるいはマスク蒸着等により形
成している。 The inorganic photosensitive substrate 21 has a rectangular shape,
ZnO or AlN is placed in the center of one main surface.
A rectangular piezoelectric thin film 22 made of a piezoelectric material such as the above is formed, and an interdigital electrode 23 is formed thereon by photoetching, mask vapor deposition, or the like.
上記インターデイジタル電極23は複数のフイ
ンガー電極26,26,…を平行に形成し、これ
らフインガー電極26,26,…を一つおきに接
続して、無機質感光性基板21に形成した引出電
極27aおよび27bに夫々引き出している。 The interdigital electrode 23 has a plurality of finger electrodes 26, 26, . . . formed in parallel, and these finger electrodes 26, 26, . 27b, respectively.
上記圧電薄膜22の両側の無機質感光性基板2
1には、該無機質感光性基板21を後述するよう
に露光および現像処理して、上記インターデイジ
タル電極23のフインガ電極26,26,…に平
行する複数本の溝28,28,…からなる表面波
反射器24,25を夫々形成している。 Inorganic photosensitive substrates 2 on both sides of the piezoelectric thin film 22
1, the inorganic photosensitive substrate 21 is exposed and developed as described below to form a surface comprising a plurality of grooves 28, 28, . . . parallel to the finger electrodes 26, 26, . . . of the interdigital electrode 23. Wave reflectors 24 and 25 are formed, respectively.
上記表面波反射器24,25を構成する溝2
8,28,…の巾およびピツチは、通常、数ミク
ロンのオーダであるが、これらは、表面波装置の
設定周波数により定まり、上記インターデイジタ
ル電極23のフインガ電極26,26,…の巾や
ピツチに概略合わせる。 Grooves 2 constituting the surface wave reflectors 24 and 25
The width and pitch of the finger electrodes 26, 26, ... of the interdigital electrode 23 are usually on the order of several microns, but these are determined by the set frequency of the surface acoustic wave device, and the width and pitch of the finger electrodes 26, 26, ... of the interdigital electrode 23 are determined by the set frequency of the surface acoustic wave device. Approximately match.
上記表面波反射器24,25の溝28,28,
…は次のようにして形成することができる。 Grooves 28, 28 of the surface wave reflectors 24, 25,
... can be formed as follows.
先ず、第3図aに示すように、第2図の表面波
装置の無機質感光性基板21となる感光性ガラス
基板31を用意し、この感光性ガラス基板31の
表面波反射器24,25の溝28,28,…の形
成位置に、第3図bに示すように、紫外線32を
投射して露光する。 First, as shown in FIG. 3a, a photosensitive glass substrate 31 that will become the inorganic photosensitive substrate 21 of the surface acoustic wave device shown in FIG. 2 is prepared. The positions where the grooves 28, 28, . . . are formed are exposed by projecting ultraviolet light 32, as shown in FIG. 3b.
この露光に際しては、たとえば、インターデイ
ジタル電極23の形成時に、反射器24,25の
領域の溝28以外の部分に、同時に金属薄膜を形
成させ、その金属薄膜をマスクとして溝28の部
分を露光すれば、インターデイジタル電極23と
溝28との目あわせは問題なくできる。 In this exposure, for example, when forming the interdigital electrodes 23, a metal thin film is simultaneously formed in areas other than the grooves 28 in the areas of the reflectors 24 and 25, and the grooves 28 are exposed using the metal thin film as a mask. For example, the interdigital electrodes 23 and the grooves 28 can be aligned without any problem.
上記のように、紫外線32が投射されると、感
光性ガラス基板31はその部分が変色する。 As described above, when the ultraviolet rays 32 are projected, that portion of the photosensitive glass substrate 31 changes color.
次いで、上記感光性ガラス基板31を弗化水素
酸等の現像液に浸漬すると、感光性ガラス基板3
1の変色部分が溶解し、第3図cに示すように、
溝28,28,…が形成される。 Next, when the photosensitive glass substrate 31 is immersed in a developer such as hydrofluoric acid, the photosensitive glass substrate 3
The discolored part of No. 1 is dissolved, and as shown in Figure 3c,
Grooves 28, 28, . . . are formed.
このようにすれば、フオトレジストを使用する
ことなく、感光性ガラス基板31に、直接、表面
波反射器24,25を形成することができる。上
記溝28,28,…の深さも、紫外線等の光の露
光量を調節することによつて、簡単に調整するこ
とができる。 In this way, the surface wave reflectors 24 and 25 can be formed directly on the photosensitive glass substrate 31 without using a photoresist. The depth of the grooves 28, 28, . . . can also be easily adjusted by adjusting the amount of exposure to light such as ultraviolet rays.
本発明は、第2図の電極構造を有する表面波装
置に限定されず、他の電極構造を有する表面波装
置に広く適用可能である。 The present invention is not limited to the surface acoustic wave device having the electrode structure shown in FIG. 2, but is widely applicable to surface acoustic wave devices having other electrode structures.
たとえば、インターデイジタル電極23は、圧
電薄膜22と無機質感光性基板21との間に形成
されていてもよい。 For example, interdigital electrodes 23 may be formed between piezoelectric thin film 22 and inorganic photosensitive substrate 21.
また、圧電薄膜22は溝28を含む基板21の
全面にわたつて付着していてもよい。 Further, the piezoelectric thin film 22 may be attached over the entire surface of the substrate 21 including the grooves 28.
発明の効果
以上、詳述したことからも明らかなように、本
発明は、無機質感光性基板を使用して表面波装置
の表面波の反射器の溝を形成するようにしたか
ら、無機質感光性基板自体を露光および現像処理
して反射器の溝を形成することができ、反射器の
形成がきわめて容易となる。Effects of the Invention As is clear from the above detailed description, the present invention uses an inorganic photosensitive substrate to form the grooves of the surface wave reflector of a surface acoustic wave device. The grooves of the reflector can be formed by exposing and developing the substrate itself, making it extremely easy to form the reflector.
また、無機質感光性基板は表面弾性波の減衰定
数が小さく、高周波域での伝播ロスが小さい表面
波装置を得ることができる。 Further, the inorganic photosensitive substrate has a small attenuation constant of surface acoustic waves, and a surface acoustic wave device with small propagation loss in a high frequency range can be obtained.
第1図は従来の表面波装置の斜視図、第2図は
本発明に係る表面波装置の一実施例の斜視図、第
3図a、第3図bおよび第3図cは夫々第2図の
表面波装置の反射器の形成工程の説明図である。
21…無機質感光性基板、22…圧電薄膜、2
3…インターデイジタル電極、24,25…反射
器、28…溝、31…感光性ガラス基板、32…
紫外線。
FIG. 1 is a perspective view of a conventional surface wave device, FIG. 2 is a perspective view of an embodiment of the surface wave device according to the present invention, and FIGS. FIG. 3 is an explanatory diagram of a process for forming a reflector of the surface acoustic wave device shown in the figure. 21... Inorganic photosensitive substrate, 22... Piezoelectric thin film, 2
3... Interdigital electrode, 24, 25... Reflector, 28... Groove, 31... Photosensitive glass substrate, 32...
Ultraviolet light.
Claims (1)
と、少くとも一組のインターデイジタル電極を形
成する一方、上記無機質感光性基板の主面を露光
および現像処理して互いにほぼ平行する複数本の
溝からなる表面波反射器を形成したことを特徴と
する表面波装置。1. A piezoelectric thin film and at least one set of interdigital electrodes are formed on the main surface of a flat inorganic photosensitive substrate, and the main surface of the inorganic photosensitive substrate is exposed and developed to form a plurality of electrodes substantially parallel to each other. A surface wave device characterized in that a surface wave reflector is formed of grooves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19842182A JPS5986917A (en) | 1982-11-11 | 1982-11-11 | Surface wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19842182A JPS5986917A (en) | 1982-11-11 | 1982-11-11 | Surface wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5986917A JPS5986917A (en) | 1984-05-19 |
| JPH0318367B2 true JPH0318367B2 (en) | 1991-03-12 |
Family
ID=16390823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19842182A Granted JPS5986917A (en) | 1982-11-11 | 1982-11-11 | Surface wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5986917A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3206285B2 (en) * | 1994-03-25 | 2001-09-10 | 株式会社村田製作所 | Edge reflection type surface acoustic wave resonator |
| JP4921032B2 (en) * | 2006-05-09 | 2012-04-18 | 株式会社岡本工作機械製作所 | Growing method for crowning roll |
-
1982
- 1982-11-11 JP JP19842182A patent/JPS5986917A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5986917A (en) | 1984-05-19 |
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