JPH03184890A - Electrode pattern formation method - Google Patents

Electrode pattern formation method

Info

Publication number
JPH03184890A
JPH03184890A JP1326321A JP32632189A JPH03184890A JP H03184890 A JPH03184890 A JP H03184890A JP 1326321 A JP1326321 A JP 1326321A JP 32632189 A JP32632189 A JP 32632189A JP H03184890 A JPH03184890 A JP H03184890A
Authority
JP
Japan
Prior art keywords
parts
resin
electrode pattern
printing
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1326321A
Other languages
Japanese (ja)
Other versions
JP2797567B2 (en
Inventor
Nobuyuki Yoshiike
信幸 吉池
Yoshihiro Watanabe
善博 渡辺
Akiyoshi Hattori
章良 服部
Kiyoaki Imoto
井元 清明
Akihiko Yoshida
昭彦 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP32632189A priority Critical patent/JP2797567B2/en
Publication of JPH03184890A publication Critical patent/JPH03184890A/en
Application granted granted Critical
Publication of JP2797567B2 publication Critical patent/JP2797567B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Printing Methods (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To accurately form a high density electrode pattern by patternwise applying printing ink mainly constituted of an organometal compound, a resin and a solvent to a substrate being an object by transfer printing using a waterless planographic plate and baking the printed pattern. CONSTITUTION:Printing ink mainly constituted of a mixed organometal compound based on an organogold compound, a resin and a solvent is supplied to the recessed parts of a waterless planographic plate using a rubber roller and the ink in the recessed parts is subsequently transferred to a transfer blanket while the ink on the blanket is printed on an alumina glazed substrate 11 being an object in a zigzag pattern of a line & space to the dried and baked to form conductive pattern electrodes 13. As the organometal compound to be used, ester of 20 or less C lower fatty acid, alcoholate, mercaptide, a polycyclic organometal compound, other resinate, rosinate or a mixture thereof are designated. By this method, high density electrode patterns can be directly formed by pattern printing and high density electrodes can be obtained in low cost.

Description

【発明の詳細な説明】 産業−1−の利用分野 本発明はハイブリットI C,サーマルヘッド、液晶表
示装置等の平板デイスプレィ等に用いられる電極パター
ン形成法に関するものであも従来の技術 従来 導電性パターン電極に(よ 基板上に蒸着、スパ
ッタリングのような真空薄膜形成プロセスにより金属の
導電性薄膜を形+1iiL  ホトリソエツチング法を
もちいてパターン形成した薄膜型のパターン電極と、基
板上にスクリーン印刷法により印刷した後、焼成するこ
とにより形成した厚膜型のパターン電極の2つのタイプ
が有り、前者はサーマルヘッドミ 液晶表示装置等の平
板デイスプレィ等に用いられ また 後者はハイブリッ
トIC等に良く用いられていも 発明が解決しようとする課題 」二に述べた二つの種類のパターン電極にはそれぞれ長
所と短所を有する。すなわ転 薄膜型はパターン精度は
高いという長所を有する爪 薄膜プロセスをもちいるた
めの設備コスト、バッチ生産などの生産法 低コスト化
の点から解決するべき問題点が多(t 一方、厚膜型は印刷焼成法を用いることから設備コスト
が低いこと、連続生産が容易なことなど利点が多賎 し
かし 従来のスクリーン印刷法によるパターン精度は±
50μm程度であり、パターン精度に問題があっtも 本発明は上記課題を解消することを目的とすも課題を解
決するための手段 本発明は金属の有機化合惧 樹脂および溶剤より主とし
て構成される印刷インキを用いて水無平版によりインキ
を被写体である基板上にパターン状に転写印刷し 焼成
することにより電極群を形成することを特徴とすも 作用 本発明によれば 高密度の電極パターンを直接パターン
印刷形成することが可能で、ホトリソエツチング工程を
簡略化でき従来のパターン電極よりさらに低コストで高
密度の電極を得ることが出来る。
[Detailed Description of the Invention] Field of Application of Industry-1- The present invention relates to a method for forming electrode patterns used in hybrid ICs, thermal heads, flat panel displays such as liquid crystal display devices, etc. A conductive thin film of metal is formed on a substrate using a vacuum thin film forming process such as vapor deposition or sputtering.A thin film pattern electrode is formed using a photolithography method, and a screen printing method is used on the substrate. There are two types of thick film pattern electrodes that are formed by printing and baking, the former being used for flat displays such as thermal heads and liquid crystal displays, and the latter being often used for hybrid ICs. The two types of patterned electrodes mentioned in Section 2 have their own advantages and disadvantages.In other words, the thin-film type has the advantage of high pattern accuracy. equipment costs, production methods such as batch production, etc. There are many problems that need to be solved from the point of view of cost reduction (t) On the other hand, the thick film type uses a printing and baking method, so equipment costs are low and continuous production is easy. However, the pattern accuracy of conventional screen printing method is ±
It is about 50 μm, and there is a problem with pattern accuracy.However, the present invention aims to solve the above problem. According to the present invention, a high-density electrode pattern is formed by transferring printing ink onto a substrate, which is a subject, in a pattern using printing ink, and then baking the ink to form an electrode group. Direct pattern printing is possible, the photolithography process can be simplified, and high-density electrodes can be obtained at lower cost than conventional patterned electrodes.

実施例 (実施例−1〉 アルミナ基板上に金の有機化合物を主体とした混合有機
金属化合物 樹脂および溶剤より主として構成される印
刷インキをゴムローラを用いて水無平版(東し 製)上
の凹部に供給し 次いで凹部のインキを転写ブランケッ
ト上に転写せしめた後、該ブランケット上のインキを被
写体である基板1・にライン&スペース50μmの千鳥
状に印刷し 乾燥後700℃で焼成することにより導電
性パターン電極を形成した インキの転移量は転写厚3μmで焼成後の電極厚は0.
2μmであった 電極は設計パターン中25μmライン/25μmスペー
スに対して、 30μmライン/20μmスペースが形
成でき、スクリーン印刷では形成できないファインパタ
ーンが水無平版法を用いて金属の有機化合物をインキ化
することにより遠戚できることが分った な叙 有機金属化合物としては炭素数が20までの低級
脂肪酸のエステ)Q  アルコラード、メルカプチドミ
 多環式有機金属化合徴 その他のレジネI・、ロジネ
ート、の単体もしくはいずれかの混合物が好ましかった (実施例−2) 実施例1において、混合有機金属化合物として、焼成後
の含有金属重量比で金が80部〜98敵ビスマスがO部
〜5訊 ロジュウムが0部〜1゜餓 バナジュウムが0
部〜5部の混合有機金属化合物を用いることにより、製
膜性のよL\ なおかつ、導電性の高い金の導電性パタ
ーン電極が得られることが分った また 基板としてガラス基板 ガラスグレーズ基板を用
いた場合には さらに シリコンが0部〜8部 鉛が0
部〜8部を添加することにより基板との付着力を向上さ
せることが明かとなツ’F。
Example (Example-1) Printing ink mainly composed of a mixed organometallic compound resin and a solvent, mainly composed of an organic compound of gold, was applied onto an alumina substrate onto a concave part of a Minamilithographic plate (manufactured by Toshi) using a rubber roller. Next, after transferring the ink in the recesses onto a transfer blanket, the ink on the blanket is printed on the substrate 1, which is the subject, in a staggered pattern with lines and spaces of 50 μm, and after drying, it is baked at 700°C to make it conductive. The transfer amount of the ink that formed the patterned electrode was 3 μm in transfer thickness, and the electrode thickness after firing was 0.5 μm.
The electrode was 2μm in diameter, but instead of the 25μm line/25μm space in the design pattern, a 30μm line/20μm space can be formed, and a fine pattern that cannot be formed by screen printing can be created by inking a metal organic compound using the waterless lithography method. It was found that they can be distantly related as organometallic compounds. (Example 2) In Example 1, as the mixed organometallic compound, the weight ratio of the metals contained after firing was 80 parts to 98 parts of gold, 0 to 5 parts of bismuth, and 0 parts of rhodium. Part ~ 1° starvation Vanadium is 0
It has been found that by using a mixed organometallic compound of 5 parts to 5 parts, a gold conductive pattern electrode with good film formability and high conductivity can be obtained. In addition, silicon is 0 to 8 parts and lead is 0.
It is clear that the adhesion to the substrate is improved by adding 8 parts to 8 parts.

金電極用の最適な有機金属化合物としてζよ 焼成後の
含有金属重量比で金が88部〜98敵 シリコンが0.
011部〜5部鉛が0.055部〜2部ビスマスが0.
 5部〜3舐 ロジュウムが0部〜5部の混合有機金属
化合物が好ましかった(実施例−3) 有機金属化合物として、実施例1の金にかえて、白を、
銀、ニッケル、タングステン、モリブデン、チタン、タ
ンタルの有機金属化合物をインキ化し爪無平版法で印刷
し 半還元雰囲気にて焼成することによりそれぞれの金
属電極が得られ丸製膜助相として(よ 実施例2に示し
た例の他にクロ人、シリコン、アルミニラへ ジルコニ
ラへヂクン、硼素が効果的であった (実施例−4) インジュウムとスズの有機金属化合物をインキ化し 実
施例1に示した方法と同様にガラス基板上に爪無平版法
で印刷し 約550℃で空気中で焼成することにより、
透明の導電性パターン電極が得られた 有機金属化合物
としてC友  焼成後の含有金属重量比でインジュウム
が90部〜98敵スズが0.5部〜10敵 鉛が0部〜
IK  シリコンが0部〜1敵 アンチモンが0部〜1
部の混合有機金属化合物が好ましかった 該透明導電性パターン電極基板を用いて単純マトリック
ス型液晶素子を作製したとこ& 従来品と間等の表示装
置が出来た (実施例−5) ルテニュウムの有機金属化合物を製膜助材としてのシリ
コン、ジルコニラへ 硼魚 ビスマ入鉛の有機金属化合
物と共にインキ化し 実施例1に小した方法と同様に基
板上に爪無平版法で印刷し、空気中で焼成することによ
り、酸化ルテニウムの導電性パターン電極が得られた 
該パターン電極は抵抗体として利用できた (実施例−6) インキ化に必要な樹脂として、天然僧服 天然樹脂誘導
体 フェノール僧服 ロジン変性フェノル&J BL 
 キシレン樹脂 メラミン僧服 ケトン樹脂 テルペン
僧服 環化ゴム 塩化ゴん アルキッド樹B’tL  
ポリアミド僧服 アクリル樹111.  ポリ塩化ビニ
ル僧服 ポリ酢酸ビニノk ポリビニルアルコール、エ
ポキシ樹Jl!、  ポリビニルブチラール、ポリウレ
タン、セルロース誘導体が利用でき、特には有機金属化
合物と相溶性がよくインキ化に優れた樹脂としてl、l
t、  天然樹脂 フェノール僧服ロジン変性フェノー
ル僧服 アルキッド僧服 ロジン変性アルキッド樹脂 
アクリル僧服 ポリビニルアルコ−に、  エポキシ樹
脂でありん(実施例−7) 迅1図に示す様に 50/ljm〜100μmのガラス
グレーズ層(12)を有する厚さ0.801111のア
ルミナ基板(11)の上に実施例2に示した組成の混合
有機金属化金敷 ロジン変性樹脂および石油系溶−〇− 剤より主として構成される印刷インキを水無平版印刷法
により81ines/imの千鳥型の電極パターン状に
印刷し 乾燥後焼成することにより電極(13)を形成
した 以上の成膜法により電極群を形成後、RuO2フ
リットペーストのスクリーン開扉1上  焼成によって
ライン状の抵抗体(14)を形成じ このうえに最後に
ガラスペーストの印刷焼成により耐磨耗層(約5μm)
(15)を形成した作製後の各ドツト抵抗値の抵抗値ば
らつきは±13%であり、それぞれのドツトの抵抗値を
通電過負荷トリミング法(発熱抵抗体の自己発生ジュー
ル処により抵抗値を調整する方法)を用いてトリミング
することにより、発熱部の抵抗値を±2%以内にそろえ
た抵0.4W/dot、1/4duty、16m5/c
ycleの駆動条件で感熱紙に印字した結電 均一な印
字が出来た (実施例−8) 第2図に示す様番へ 50μm−100μmのガラスグ
レーズ層(22)を有する厚さ0.8n+mのアルミナ
基板(21)の上に実施例2に示した組成の混−10= 合有機金属化合4独 ロジン変性樹脂および石油系溶剤
より主として構成される印刷インキを爪無平版印刷法に
より81ines/mmの対向電極パターン状に印刷し
 乾燥後焼成することにより電極(23)を形成した 
以上の成膜法により電極群を形成後、実施例5に記載し
た方法を用いてRuO2のスドット状の抵抗体(24)
を形tL、、  このうえに最後にガラスペーストの印
刷焼成により耐磨耗層(約5μrn)(25)を形成し
た 作製後の各ドツト抵抗値の抵抗値ばらつきは±8%であ
り、特にトリミングをしなくても良好な印字が得られた 発明の効果 以上のように 本発明によれば 金属の有機化合1扱 
樹脂および溶剤より主として構成される印刷インキを用
いて爪無平版によりインキを被写体である基板上にパタ
ーン状に転写印刷し 焼成することにより、精度良く高
密度の電極パターンをi+’a−、+3パターン印刷形
戊することが可能となり、ホトリソエツチング工程を簡
略化でき低コストで高11− 密度の導電性パターン電極を連続的に生産できる。
The optimal organometallic compound for gold electrodes is ζ.The metal weight ratio after firing is 88 to 98 parts for gold and 0.0 parts for silicon.
0.011 parts to 5 parts Lead 0.055 parts to 2 parts Bismuth 0.05 parts to 2 parts
A mixed organometallic compound containing 0 to 5 parts of rhodium was preferred (Example 3) As the organometallic compound, instead of gold in Example 1, white was used.
Organometallic compounds of silver, nickel, tungsten, molybdenum, titanium, and tantalum are made into ink, printed using a nailless lithography method, and fired in a semi-reducing atmosphere to obtain each metal electrode, which is then used as a round film co-phase (to be implemented). In addition to the examples shown in Example 2, black metal, silicon, aluminium, zirconyl, and boron were effective (Example 4) The method shown in Example 1 was made by forming an ink from an organometallic compound of indium and tin. Similarly, by printing on a glass substrate using the nailless lithography method and baking it in air at about 550°C,
A transparent conductive pattern electrode was obtained.As an organometallic compound, the metal weight ratio after firing is 90 parts to 98 parts of indium, 0.5 parts to 10 parts of tin, and 0 parts of lead.
IK Silicon is 0 to 1 enemy Antimony is 0 to 1
A simple matrix type liquid crystal device was fabricated using the transparent conductive patterned electrode substrate, in which a mixed organometallic compound was preferable. Using organometallic compounds as film-forming aids such as silicon and zirconyl, it was made into an ink together with an organometallic compound containing bismuth, printed on a substrate by the nailless lithography method in the same manner as in Example 1, and printed in air. By firing, a conductive pattern electrode of ruthenium oxide was obtained.
The patterned electrode could be used as a resistor (Example-6) As the resin necessary for ink formation, natural monk's clothes, natural resin derivatives, phenol monk's clothes, rosin-modified phenol & J BL
Xylene resin Melamine monk's clothing Ketone resin Terpene monk's clothing Cyclized rubber Gon chloride Alkyd tree B'tL
Polyamide monk's robe acrylic wood 111. Polyvinyl chloride monk's clothing Polyvinyl acetate K Polyvinyl alcohol, epoxy tree Jl! , polyvinyl butyral, polyurethane, and cellulose derivatives can be used, and L and L are especially compatible with organometallic compounds and are excellent for forming into inks.
T, Natural resin Phenol robe Rosin-modified phenol robe Alkyd robe Rosin-modified alkyd resin
Acrylic monk's robe made of polyvinyl alcohol and epoxy resin (Example 7) As shown in Figure 1, an alumina substrate (11) with a thickness of 0.801111 and a glass glaze layer (12) of 50/ljm to 100 μm was used. ), a printing ink mainly composed of a mixed organometallic anvil having the composition shown in Example 2, a rosin-modified resin, and a petroleum-based solvent was applied to a staggered electrode of 81 ines/im using the waterless lithographic printing method. Electrodes (13) were formed by printing in a pattern, drying and firing. After forming an electrode group using the above film formation method, a line-shaped resistor (14) was formed on the screen opening door 1 of RuO2 frit paste by firing. On top of this, a wear-resistant layer (approximately 5 μm) is added by printing and baking glass paste.
(15) After fabrication, the resistance variation of each dot resistance value was ±13%, and the resistance value of each dot was adjusted by the current overload trimming method (self-generated joule treatment of the heating resistor). By trimming using the method of
Electrical formation printed on thermal paper under YCL driving conditions Uniform printing was achieved (Example-8) To the pattern number shown in Figure 2, a 0.8n+m thick sheet with a glass glaze layer (22) of 50μm-100μm A mixture of the composition shown in Example 2 on the alumina substrate (21) was printed at 81 ines/mm by a nailless planographic printing method using a printing ink mainly composed of a mixed organometallic compound (4), a rosin-modified resin, and a petroleum solvent. The electrode (23) was formed by printing a counter electrode pattern, drying and firing.
After forming the electrode group by the above film-forming method, the RuO2 dot-shaped resistor (24) was formed using the method described in Example 5.
Finally, a wear-resistant layer (approximately 5 μrn) (25) was formed by printing and baking glass paste.The resistance variation of each dot resistance after fabrication was ±8%, especially during trimming. As described above, according to the present invention, a metal is treated as an organic compound 1.
Using printing ink mainly composed of resin and solvent, the ink is transferred and printed in a pattern onto the substrate (substrate) using a nailless lithographic plate, and then baked to form a highly precise electrode pattern of i+'a-, +3. It becomes possible to print patterns, simplify the photolithography process, and continuously produce conductive patterned electrodes with high 11-density at low cost.

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第2図Cヨ  本発明の一実施例の導電性
パターン電極の構成図である。
FIG. 1 and FIG. 2C are configuration diagrams of a conductive pattern electrode according to an embodiment of the present invention.

Claims (6)

【特許請求の範囲】[Claims] (1)金属の有機化合物、樹脂および溶剤より主として
構成される印刷インキをゴムローラを用いて水無平版上
の凹部に供給し、次いで凹部のインキを転写ブランケッ
ト上に転写せしめた後、前記ブランケット上のインキを
被写体である基板上にパターン状に転写印刷し、焼成す
ることにより電極群を形成したことを特徴とする電極パ
ターンの形成法。
(1) Printing ink mainly composed of a metal organic compound, resin, and solvent is supplied to the recesses on the waterless lithographic plate using a rubber roller, and then the ink in the recesses is transferred onto the transfer blanket. 1. A method for forming an electrode pattern, comprising transferring and printing ink onto a substrate as a subject in a pattern, and baking the resulting electrode group.
(2)白金族元素、金、銀、ニッケル、クロム、シリコ
ン、ゲルマニウム、タンタル、アルミニウム、ジルコニ
ウム、チタン、硼素、ビスマス、バナジウム、鉛、イン
ジウム、スズ、タングステン、モリブデンから選ばれた
有機金属化合物を用いることを特徴とする請求項1記載
の電極パターンの形成法。
(2) Organometallic compounds selected from platinum group elements, gold, silver, nickel, chromium, silicon, germanium, tantalum, aluminum, zirconium, titanium, boron, bismuth, vanadium, lead, indium, tin, tungsten, and molybdenum. 2. The method of forming an electrode pattern according to claim 1, wherein
(3)有機金属化合物が炭素数が20までの低級脂肪酸
のエステル、アルコラード、メルカプチド、多環式有機
金属化合物、その他のレジネート、ロジネート、の単体
もしくはいずれかの混合物であることを特徴とする請求
項2記載の電極パターンの形成法。
(3) A claim characterized in that the organometallic compound is a single substance or a mixture of esters of lower fatty acids having up to 20 carbon atoms, alcoholades, mercaptides, polycyclic organometallic compounds, and other resinates and rosinates. Item 2. The method for forming an electrode pattern according to Item 2.
(4)樹脂が天然樹脂、フェノール樹脂、ロジン変性フ
ェノール樹脂、アルキッド樹脂、ロジン変性アルキッド
樹脂、アクリル樹脂、ポリビニルアルコール、エポキシ
樹脂であることを特徴とする請求項2記載の電極パター
ンの形成法。
(4) The method for forming an electrode pattern according to claim 2, wherein the resin is a natural resin, phenol resin, rosin-modified phenol resin, alkyd resin, rosin-modified alkyd resin, acrylic resin, polyvinyl alcohol, or epoxy resin.
(5)有機金属化合物として、焼成後の含有金属重量比
で金が88部〜98部、シリコンが0.01部〜5部、
鉛が0.05部〜2部、ビスマスが0.5部〜3部、ロ
ジニウムが0部〜5部の混合有機金属化合物と樹脂およ
び溶剤より主として構成される印刷インキを水無平版印
刷法を用いて基板上にパターン状に印刷し、焼成するこ
とにより形成したことを特徴とする請求項2記載の電極
パターンの形成法。
(5) As an organometallic compound, gold is 88 parts to 98 parts, silicon is 0.01 parts to 5 parts, in metal weight ratio after firing;
A printing ink mainly composed of a mixed organometallic compound containing 0.05 to 2 parts of lead, 0.5 to 3 parts of bismuth, and 0 to 5 parts of rhodinium, a resin, and a solvent is applied using a waterless lithography method. 3. The method of forming an electrode pattern according to claim 2, wherein the electrode pattern is formed by printing a pattern on a substrate using a substrate and firing the electrode pattern.
(6)有機金属化合物として、焼成後の含有金属重量比
でインジュウムが90部〜98部、スズが0.5部〜1
0部、鉛が0部〜1部、シリコンが0部〜1部、アンチ
モンが0部〜1部の混合有機金属化合物と樹脂および溶
剤より主として構成される印刷インキを水無平版印刷法
を用いて基板上にパターン状に印刷し、焼成することに
より形成したことを特徴とする請求項2記載の電極パタ
ーンの形成法。
(6) As an organometallic compound, the metal weight ratio after firing is 90 parts to 98 parts of indium and 0.5 parts to 1 part of tin.
Using a waterless lithography method, a printing ink mainly composed of a mixed organometallic compound containing 0 parts of lead, 0 parts to 1 part of silicon, and 0 parts to 1 part of antimony, a resin, and a solvent is used. 3. The method of forming an electrode pattern according to claim 2, wherein the electrode pattern is formed by printing a pattern on a substrate and firing the electrode pattern.
JP32632189A 1989-12-15 1989-12-15 Method of forming electrode pattern Expired - Fee Related JP2797567B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32632189A JP2797567B2 (en) 1989-12-15 1989-12-15 Method of forming electrode pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32632189A JP2797567B2 (en) 1989-12-15 1989-12-15 Method of forming electrode pattern

Publications (2)

Publication Number Publication Date
JPH03184890A true JPH03184890A (en) 1991-08-12
JP2797567B2 JP2797567B2 (en) 1998-09-17

Family

ID=18186463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32632189A Expired - Fee Related JP2797567B2 (en) 1989-12-15 1989-12-15 Method of forming electrode pattern

Country Status (1)

Country Link
JP (1) JP2797567B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5695571A (en) * 1993-06-01 1997-12-09 Fujitsu Limited Cleaning method using a defluxing agent
US7311937B2 (en) * 2001-10-31 2007-12-25 Seiko Epson Corporation Method for forming a line pattern, line pattern, and electro-optic device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010284828A (en) 2009-06-09 2010-12-24 Ihi Corp Offset printer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5695571A (en) * 1993-06-01 1997-12-09 Fujitsu Limited Cleaning method using a defluxing agent
US6050479A (en) * 1993-06-01 2000-04-18 Fujitsu, Ltd. Defluxing agent cleaning method and cleaning apparatus
US7311937B2 (en) * 2001-10-31 2007-12-25 Seiko Epson Corporation Method for forming a line pattern, line pattern, and electro-optic device

Also Published As

Publication number Publication date
JP2797567B2 (en) 1998-09-17

Similar Documents

Publication Publication Date Title
US20040178006A1 (en) Resistive touch screen with variable resistivity layer
US5189284A (en) Resistor, process for producing the same, and thermal head using the same
EP0022279B1 (en) Method of manufacturing an optically transparent and electroconductive thin-film pattern
JPH03184890A (en) Electrode pattern formation method
US20090021686A1 (en) Method for gravure printing transparent electrodes, an dink composition therefor
JPH063506B2 (en) Transparent substrate for color liquid crystal display
US5053249A (en) Method for producing resistors
JPH03261194A (en) Method for forming conductive pattern electrodes
JPH04332694A (en) Intaglio and preparation thereof
JP2626036B2 (en) Manufacturing method of thermal head
JPH03234085A (en) Forming method for conductive pattern electrode
JPH07102708B2 (en) Thermal head
JP2650353B2 (en) Screen printing ink
JPS60225802A (en) Production of color filter for liquid crystal
JPH0386559A (en) Thermal head and production thereof
US6045856A (en) Process for producing a resistive element by diffusing glass
GB2068834A (en) Coating vitreous or ceramic supports
JPH01304702A (en) Manufacture of resistor, paste resistor, and resistive elements and thermal head
JP3107095B2 (en) Resistor film forming material
JPH0581942A (en) Method for forming patterned transparent conductive film
JP2663590B2 (en) Screen printing ink for forming thin film resistor and method for forming thin film resistor using this ink
KR920005760B1 (en) Thermal head and production thereof
JPH02147253A (en) thermal head
JPH043901A (en) Thin film resistor of ruthenium oxide and manufacture thereof
JPH03243361A (en) Manufacture of thermal head

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees