JPH031959U

JPH031959U -

Info

Publication number: JPH031959U
Application number: JP6153989U
Authority: JP
Priority date: 1989-05-26
Filing date: 1989-05-26
Publication date: 1991-01-10

Description

[Brief explanation of drawings]

第１図は本考案装置の実施例を示す正面断面図
、第２図はその要部拡大縦断面図、第３図は蒸着
源容器の上方に固定シヤツタを設けた状態を示す
平面図である。第４図は真空蒸着装置の第１の従
来例を示す正面断面図、第５図は半導体ウエーハ
が保持されたプラネタの保持穴部分の断面図、第
６図は真空蒸着装置の第２の従来例を示す正面断
面図、第７図は第６図の真空蒸着装置に使用され
る蒸着源容器の平面図、第８図ａ，ｂ，ｃは従来
装置の問題点を説明するための蒸着源の断面図で
ある。２……真空容器、１６……プラネタ、１７……
半導体ウエーハ、２３……蒸着源、２７……電子
ビーム、２９……蒸着源容器、３０ａ〜３０ｅ…
…蒸着源収容部、３１……不純物層、４２……固
定シヤツタ、４３……窓孔、４５……不純物層除
去手段。 Fig. 1 is a front sectional view showing an embodiment of the device of the present invention, Fig. 2 is an enlarged vertical sectional view of the main part thereof, and Fig. 3 is a plan view showing a state in which a fixed shutter is provided above the vapor deposition source container. . Fig. 4 is a front sectional view showing the first conventional example of the vacuum evaporation apparatus, Fig. 5 is a sectional view of the holding hole portion of the planetar in which the semiconductor wafer is held, and Fig. 6 is the second conventional example of the vacuum evaporation apparatus. A front sectional view showing an example, FIG. 7 is a plan view of a deposition source container used in the vacuum evaporation apparatus shown in FIG. 6, and FIGS. FIG. 2...Vacuum container, 16...Planeta, 17...
Semiconductor wafer, 23... Vapor deposition source, 27... Electron beam, 29... Vapor deposition source container, 30a to 30e...
. . . Vapor deposition source storage section, 31 . . . Impurity layer, 42 . . . Fixed shutter, 43 . . . Window hole, 45 .

Claims

[Scope of utility model registration request]

It is supported in a vacuum container so that it can rotate and revolve,
and a planetar holding a semiconductor wafer, and a planetar installed in a position opposite to the planetary so as to be able to rotate intermittently;
and an evaporation source container having a plurality of evaporation source accommodating parts with an open top surface that accommodate evaporation sources that are irradiated with electron beams and deposited on semiconductor wafers at equidistant positions on the circumference; and a fixed shutter for shielding the vapor deposition source, which has a window hole formed on the periphery so that any of the vapor deposition sources in each vapor deposition source storage section can face the vapor deposition source, and a vapor deposition source shielded by the fixed shutter of the vapor deposition source. and an impurity layer removing means for removing an impurity layer formed on the surface of the source, and the evaporation source facing the window hole of the fixed shutter is irradiated with an electron beam through the window hole. vacuum evaporation equipment.