JPH0320436U - - Google Patents
Info
- Publication number
- JPH0320436U JPH0320436U JP7952589U JP7952589U JPH0320436U JP H0320436 U JPH0320436 U JP H0320436U JP 7952589 U JP7952589 U JP 7952589U JP 7952589 U JP7952589 U JP 7952589U JP H0320436 U JPH0320436 U JP H0320436U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- photoresist
- impurity
- view
- main part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims 2
- 238000002513 implantation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図ＡおよびＢはこの考案を電界効果型のｐ
−ＭＯＳに適用した第１実施例を示し、第１図Ａ
はその露光工程を示す要部拡大断面図、第１図Ｂ
はイオンの打込み工程を示す要部拡大断面図、第
２図ＡおよびＢはｐｎ接合の半導体装置に適用し
た第２実施例を示し、第２図Ａはその露光工程を
示す要部拡大断面図、第２図Ｂはイオンの打込み
工程を示す要部拡大断面図、第３図は従来のｐｎ
接合の半導体装置のイオン打込み工程を示す断面
図である。
１０……シリコン基板、１７……フオトレジス
ト、１９……フオトレジストの除去部分、２０…
…壁面、２１……ｐ型領域。
Figures 1A and B show this idea in a field-effect type p
- Fig. 1A shows the first embodiment applied to MOS.
Figure 1B is an enlarged cross-sectional view of the main part showing the exposure process.
2 is an enlarged sectional view of the main part showing the ion implantation process, FIGS. 2A and B show a second embodiment applied to a pn junction semiconductor device, and FIG. 2A is an enlarged sectional view of the main part showing the exposure process. , FIG. 2B is an enlarged sectional view of the main part showing the ion implantation process, and FIG. 3 is a conventional PN
FIG. 3 is a cross-sectional view showing an ion implantation process for a semiconductor device with a junction. 10...Silicon substrate, 17...Photoresist, 19...Removed portion of photoresist, 20...
...Wall surface, 21...p-type region.
Claims (1)
た部分から不純物が打込まれた半導体装置におい
て、 前記フオトレジストが前記不純物の打込み角度
とほぼ同じ角度の傾斜面をもつて除去されている
ことを特徴とする半導体装置。[Claims for Utility Model Registration] A semiconductor device in which a photoresist is partially removed and an impurity is implanted from the removed portion, wherein the photoresist has an inclined surface having approximately the same angle as the implantation angle of the impurity. A semiconductor device characterized in that the semiconductor device is removed by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7952589U JPH0320436U (en) | 1989-07-07 | 1989-07-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7952589U JPH0320436U (en) | 1989-07-07 | 1989-07-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0320436U true JPH0320436U (en) | 1991-02-28 |
Family
ID=31623757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7952589U Pending JPH0320436U (en) | 1989-07-07 | 1989-07-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0320436U (en) |
-
1989
- 1989-07-07 JP JP7952589U patent/JPH0320436U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0320436U (en) | ||
| JPH0479424U (en) | ||
| JPS6327066U (en) | ||
| JPH0341949U (en) | ||
| JPS6338343U (en) | ||
| JPS6312856U (en) | ||
| JPH0436252U (en) | ||
| JP2808901B2 (en) | Method for manufacturing semiconductor device | |
| JPS61162066U (en) | ||
| JPS6315065U (en) | ||
| JPS6219758U (en) | ||
| JPH0241427U (en) | ||
| JPS6312858U (en) | ||
| JPS6315066U (en) | ||
| JPH0186235U (en) | ||
| JPS62122363U (en) | ||
| JPH0365262U (en) | ||
| JPH0379425U (en) | ||
| JPH07114278B2 (en) | Method for manufacturing charge transfer device | |
| JPS6333644U (en) | ||
| JPS6411557U (en) | ||
| JPH028058U (en) | ||
| JPS61164053U (en) | ||
| JPS61177462U (en) | ||
| JPS6390866U (en) |