JPH03210816A - Mos semiconductor integrated circuit - Google Patents

Mos semiconductor integrated circuit

Info

Publication number
JPH03210816A
JPH03210816A JP2005487A JP548790A JPH03210816A JP H03210816 A JPH03210816 A JP H03210816A JP 2005487 A JP2005487 A JP 2005487A JP 548790 A JP548790 A JP 548790A JP H03210816 A JPH03210816 A JP H03210816A
Authority
JP
Japan
Prior art keywords
output
trs
level
voltage
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005487A
Other languages
Japanese (ja)
Inventor
Hajime Shimada
嶋田 元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2005487A priority Critical patent/JPH03210816A/en
Publication of JPH03210816A publication Critical patent/JPH03210816A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To shorten the rising time and the falling time of an output signal by providing a series connection of a CMOS inverter composed of P/N-channel MOS transistors(TRs) and two MOS TRs and a capacitor connecting the inverter output and a common connecting point of the series connection and using the connecting point as an output terminal. CONSTITUTION:When a voltage Vcc is applied to an input terminal I as shown in a voltage waveform 2 at an input terminal, N-channel MOS TRs N1, N2 are turned on. Then the sum of currents flowing to the TRs N1, N2 from a level A through a load resistor RL toward GND is supplied and a voltage drop is caused across the resistor. In this case, a P-channel MOS TR P2 limits an output terminal voltage not to be below the voltage Vcc. When a level 0V is fed to the input terminal I, the TRs N1, N2 are turned off and the TR TRs P1 is turned on. Then as soon as the output of the CMOS inverter composed of the TRs P1, N1 goes to a level Vcc, the level at the output terminal O is the same as the level A. Thus, the input signal is converted into an output signal.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はMOS半導体集積回路に関し、特に論理回路の
出力バッファ回路を有するMOS半導体集積回路に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a MOS semiconductor integrated circuit, and more particularly to a MOS semiconductor integrated circuit having an output buffer circuit of a logic circuit.

〔従来の技術〕[Conventional technology]

従来、この種のMOS半導体集積回路に内蔵されている
論理回路の出力バッファ回路は、第3図に示す様に、入
力端子IN、 出力端子OUT、  ダイオードD、N
チャ/ネルMO8トランジスタNから構成されていた・ 電位人と■ccI%11に、負荷抵抗RLと負荷容量C
Lとの直列体が考えられ、その共通接続点く出力端子O
UTが接続されている。
Conventionally, the output buffer circuit of a logic circuit built into this type of MOS semiconductor integrated circuit has an input terminal IN, an output terminal OUT, and diodes D and N, as shown in FIG.
It was composed of channel/channel MO8 transistor N, a potential person and ■ccI%11, a load resistance RL and a load capacitance C.
A series body with L is considered, and the common connection point is the output terminal O.
UT is connected.

第4図は第3図の出力バラフッ回路の動作を説明する電
圧波形図である。第3図、第4図において、入力端子電
圧波形6の様に1入力端子INK電圧が加わると、入力
VCC区間8では、NチャンネルトランジスタNがオン
状態のため、負荷抵抗RLには電位AからGND方向へ
電流が流れ、電圧降下が生じるが、ダイオードDによシ
制限を受け、出力端子OUTの電圧は出力端子電圧波形
5の様にVCCとなる。また、入力O■区間7では、ト
ランジスタNがオフ状態のため、抵抗RLによプ、負荷
谷1tcLに充電を行いながら、電圧OUTは上昇する
ため、出力端子電圧波形5の様に立上時間T、を持り。
FIG. 4 is a voltage waveform diagram illustrating the operation of the output balance circuit of FIG. 3. In FIGS. 3 and 4, when one input terminal INK voltage is applied as shown in the input terminal voltage waveform 6, in the input VCC section 8, since the N-channel transistor N is in the on state, the load resistor RL is applied from the potential A. A current flows in the GND direction and a voltage drop occurs, but it is limited by the diode D, and the voltage at the output terminal OUT becomes VCC as shown in the output terminal voltage waveform 5. In addition, in the input O section 7, since the transistor N is in the off state, the voltage OUT rises while being charged to the load valley 1tcL by the resistor RL, so the rise time is as shown in the output terminal voltage waveform 5. Has T.

この出力端子OUTを、出力バッファ回路の出力信号と
していた。
This output terminal OUT was used as an output signal of the output buffer circuit.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

前述した従来の論理回路の出力バッフγ回路では、出力
信号の立上時間Trが大きく、高速な信号伝達が行なえ
ないという欠点がある。。
The output buffer γ circuit of the conventional logic circuit described above has a drawback that the rise time Tr of the output signal is long and high-speed signal transmission cannot be performed. .

本発明の目的は、前記欠点が解決され、出力信号の立上
時間を小さくして、高速な信号伝達が行なえるようにし
たMOS半導体集積回路を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a MOS semiconductor integrated circuit in which the above-mentioned drawbacks are overcome, the rise time of an output signal is reduced, and high-speed signal transmission can be performed.

〔課題全解決するための手段〕[Means to solve all problems]

本発明のMOS半導体集積回路の構成は、ゲートが入力
端子に接続されたP、  NチャンネルMOSトランジ
スタからなる0MO8インバータと、6iJ記入力端子
をゲート入力とするMOS トランジスタと出力電圧が
所定値以下にならぬように制限するMO8I−、tンジ
メタとの直列体と、前記CMOSインバータの出力と前
記直列体の共通接続点とを接続する容量とを備え、前記
接続点を出力端子となしたことを特徴とする。
The configuration of the MOS semiconductor integrated circuit of the present invention includes an 0MO8 inverter consisting of P and N channel MOS transistors whose gates are connected to input terminals, a MOS transistor whose gate input is the 6iJ input terminal, and an output voltage below a predetermined value. A series body with MO8I- and t diagonal metals is provided to limit the output from the CMOS inverter, and a capacitor connects the output of the CMOS inverter to a common connection point of the series body, and the connection point is used as an output terminal. Features.

〔実施例〕〔Example〕

次に本発明を図面を参照しながら説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例のMOS半導体集積回路の回
路図である。第1図において、本実施例は、入力端子I
からの入力信号によりゲート駆動されるNチャンネルM
OS )ランジスタN意によるオープンドレイン出力回
路と、その出力端子0と、出力端子電圧をVCC以下と
ならない様に制限するPチャンネルMOSトランジスタ
Ps ト、入力端子工からの入力信号によシゲート駆動
されるPチャンネルMO8トランジスタPI及びNチャ
ンネルMOS トランジスタN1によるCMOSインバ
ータと、このインバータ出力と出力端子0との間に接続
されるキャパシタCとを含み、構成される。
FIG. 1 is a circuit diagram of a MOS semiconductor integrated circuit according to an embodiment of the present invention. In FIG. 1, this embodiment has an input terminal I
N-channel M whose gate is driven by an input signal from
OS) An open drain output circuit using a transistor N, its output terminal 0, and a P channel MOS transistor Ps which limits the output terminal voltage so that it does not go below VCC, is gate driven by an input signal from the input terminal. It is configured to include a CMOS inverter including a P-channel MO8 transistor PI and an N-channel MOS transistor N1, and a capacitor C connected between the inverter output and the output terminal 0.

次に本実施例の動作について説明する。Next, the operation of this embodiment will be explained.

第2図は第1図に示す実施例の動作を説明する電圧波形
図である。第1図、第2図において、入力端子電圧波形
2の様に、入力端子工にVCCが加わると、Nチャンネ
ルMOS トランジスタNI。
FIG. 2 is a voltage waveform diagram illustrating the operation of the embodiment shown in FIG. 1. In FIGS. 1 and 2, as shown in input terminal voltage waveform 2, when VCC is applied to the input terminal, the N-channel MOS transistor NI.

Nxはオン状態となシ、負荷抵抗Rx、に電位AからG
ND方向へトランジスタNt とトランジスタNxへ流
れる電流の合計が流れ(ただしトランジスタN* Id
容容量C上ル直流分はカットされている)、電圧降下が
発生する。この時、PチャンネルMO8トランジスタP
sにより出力端子電圧はvcc 以下とならない様に制
限されるので、入力VCC区間4の出力端子電圧波形1
の様KVccとなる。
When Nx is in the on state, the potential A to G is applied to the load resistor Rx.
The sum of the currents flowing to the transistor Nt and the transistor Nx flows in the ND direction (however, the transistor N*Id
(The DC component above the capacitance C is cut off), and a voltage drop occurs. At this time, P channel MO8 transistor P
Since the output terminal voltage is limited by s so that it does not become less than vcc, the output terminal voltage waveform 1 of the input VCC section 4
It will be like KVcc.

また、入力端子IKOVが加わると、NチャンネルMO
S )ランジスタNt、Nst′iオフ状態となシ、P
チャンネルMO8トランジスタP、はオン状態となる。
Also, when input terminal IKOV is added, N-channel MO
S) Transistors Nt, Nst'i are in off state, P
Channel MO8 transistor P is turned on.

すると、それまでにキャパシタCにはvcc なる電圧
で充電が行なわれているので、トランジスタP!とNI
KよるC’MO8インバータの出力がVCCとなると同
時に、出力端子0の電2倍のVCCが発生し、電位Aと
同じとなる。これが、出力端子電圧波形lの入力0■区
間3にあたるのである。
Then, since the capacitor C has been charged with the voltage vcc by then, the transistor P! and N.I.
At the same time that the output of the C'MO8 inverter based on K becomes VCC, VCC, which is twice the voltage of output terminal 0, is generated and becomes the same potential as A. This corresponds to the input 0■ section 3 of the output terminal voltage waveform l.

この例では、〔C≧l0XCL、A=2XVcc ]と
して説明が行なわれている。
In this example, the explanation is given as [C≧l0XCL, A=2XVcc].

この様に入力信号が出力信号へ変換されるのである。In this way, an input signal is converted into an output signal.

〔発明の効果〕〔Effect of the invention〕

以上説明した様に、本発明は、入力端子からの入力信号
によシ動作するMOS トランジスタと、出力端子の電
圧が所定値(Vcc)以下とならない様に制限するMO
S トランジスタ、そしてその出力端子に接続されるキ
ャパシタと、MOSトランジスタ、MOS トランジス
タによる0MO8インバータとによ郵補助する仁とによ
り、その出力信号の立上時間及び立下時間を短縮できる
効果がある。
As explained above, the present invention includes a MOS transistor that operates according to an input signal from an input terminal, and a MOS transistor that limits the voltage at an output terminal so that it does not fall below a predetermined value (Vcc).
The S transistor, the capacitor connected to its output terminal, the MOS transistor, and the 0MO8 inverter using the MOS transistor have the effect of shortening the rise time and fall time of the output signal.

4、4,

【図面の簡単な説明】 第1図は本発明の一実施例のMO8半導体装置回路の回
路図、第2図は第1r!!JK示す実施例の動作を示す
電圧波形図、第3図は従来の論理回路の出力バッフ1回
路の回路図、第4図は第3図に示す出力バッファ回路の
動作を示す電圧波形図である。 1.5・・・・・・出力端子電圧波形、2,6・−・・
・・入力端子電圧波形、3,7・・・・・・入力Ov区
間、4,8・・・・・・入力VCC区間、Tr・・・・
・・立上時間、Pl、Ps・・・・・・PチャンネルM
O8トランジスタ、Nl p N’sN・・・・−Nチ
ャンネルMO8)ランジスメ、C・・・・・・キャパシ
タ、D・・・・・・ダイオードsRL・・・・・・負荷
抵抗、CL・・・・・・負荷容量、I、IN・・・・・
・入力端子、0、OUT ・・・・・・出力端子。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a circuit diagram of an MO8 semiconductor device circuit according to an embodiment of the present invention, and FIG. 2 is a circuit diagram of a MO8 semiconductor device circuit according to an embodiment of the present invention. ! 3 is a circuit diagram of one output buffer circuit of a conventional logic circuit, and FIG. 4 is a voltage waveform diagram showing the operation of the output buffer circuit shown in FIG. 3. . 1.5...Output terminal voltage waveform, 2,6...
...Input terminal voltage waveform, 3, 7...Input Ov section, 4,8...Input VCC section, Tr...
...rise time, Pl, Ps...P channel M
O8 transistor, Nl p N'sN...-N channel MO8) Ranjisume, C... Capacitor, D... Diode sRL... Load resistance, CL... ...Load capacity, I, IN...
・Input terminal, 0, OUT...Output terminal.

Claims (1)

【特許請求の範囲】[Claims] ゲートが入力端子に接続されたP、NチャンネルMOS
トランジスタからなるCMOSインバータと、前記入力
端子をゲート入力とするMOSトランジスタと出力電圧
が所定値以下にならぬように制限するMOSトランジス
タとの直列体と、前記CMOSインバータの出力と前記
直列体の共通接続点とを接続する容量とを備え、前記接
続点を出力端子となしたことを特徴とするMOS半導体
集積回路。
P, N channel MOS with gate connected to input terminal
A CMOS inverter consisting of a transistor, a series body of a MOS transistor whose gate input is the input terminal, and a MOS transistor that limits the output voltage so that it does not fall below a predetermined value, and a common between the output of the CMOS inverter and the series body. 1. A MOS semiconductor integrated circuit, comprising: a capacitor for connecting a connection point; and the connection point serves as an output terminal.
JP2005487A 1990-01-12 1990-01-12 Mos semiconductor integrated circuit Pending JPH03210816A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005487A JPH03210816A (en) 1990-01-12 1990-01-12 Mos semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005487A JPH03210816A (en) 1990-01-12 1990-01-12 Mos semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH03210816A true JPH03210816A (en) 1991-09-13

Family

ID=11612603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005487A Pending JPH03210816A (en) 1990-01-12 1990-01-12 Mos semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH03210816A (en)

Similar Documents

Publication Publication Date Title
JPS6161295B2 (en)
JPH0812986B2 (en) Delay circuit
JPH04229714A (en) Integrated circuit having buffer
JPS62171216A (en) Semiconductor logic circuit
JPH10173511A (en) Voltage level shifting circuit
JPS61222318A (en) Power-on reset circuit
JPH07135464A (en) Tri-state value input buffer circuit
JPH0677804A (en) Output circuit
JPH03210816A (en) Mos semiconductor integrated circuit
JPH0685497B2 (en) Semiconductor integrated circuit
JPS6213120A (en) Semiconductor device
JP2645117B2 (en) Reset circuit for semiconductor integrated circuit
JPH0355912A (en) Hysteresis circuit
JP2541289B2 (en) Output circuit
JPS6025323A (en) Semiconductor integrated circuit
JPS63275223A (en) Output buffer circuit
JP2846338B2 (en) Schmitt trigger circuit
JP2808784B2 (en) Input circuit
JPH02145018A (en) Level shift circuit
JP2022011384A (en) Level shift circuit
JPS63254816A (en) Schmitt trigger circuit
JPH09270700A (en) Semiconductor device
JPS6281809A (en) Semiconductor integrated logic circuit
JPH04165709A (en) Rs flip-flop circuit
JPH0231896B2 (en)