JPH03215956A - Method and apparatus for testing semiconductor device - Google Patents

Method and apparatus for testing semiconductor device

Info

Publication number
JPH03215956A
JPH03215956A JP2011414A JP1141490A JPH03215956A JP H03215956 A JPH03215956 A JP H03215956A JP 2011414 A JP2011414 A JP 2011414A JP 1141490 A JP1141490 A JP 1141490A JP H03215956 A JPH03215956 A JP H03215956A
Authority
JP
Japan
Prior art keywords
contact
semiconductor element
semiconductor
external lead
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011414A
Other languages
Japanese (ja)
Inventor
Akio Tazaki
田崎 秋生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP2011414A priority Critical patent/JPH03215956A/en
Publication of JPH03215956A publication Critical patent/JPH03215956A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To lessen a contact resistance, to improve a measurement in accuracy, and to make a Kelvin type measurement accurate by a method wherein an external lead is brought into contact with a first and a second contact terminal as pinched between them when a pressing means is made to press the first and the second contact terminal against a holding member. CONSTITUTION:When a first and a second contact terminal, 5a and 5b, are pressed against a holding member 4 by a presser 6, outer leads 7a are brought into contact with the contact terminals 5a and 5b as being pinched between them. The two contact terminals 5a and 5b are brought into contact with the outer leads of a measured semiconductor element 7 as mentioned above, whereby a contact can be made large in area. Furthermore, a force line 2 and a sense line 3 are separately provided extending from a semiconductor measuring device 1 to a part above the outer leads 7a of the semiconductor element 7 as an object of measurement. By this setup, a contact resistance can be lessened, a measurement can be made high in accuracy, and a Kelvin type measurement can be improved in accuracy.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体素子にコンタクト端子を接触させて半
導体素子の機能検査をする半導体素子の検査装置および
検査方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor device testing apparatus and method for testing the functionality of a semiconductor device by bringing contact terminals into contact with the semiconductor device.

従来の技術 従来、この種の半導体素子の検査装置は、被測定用半導
体素子の各外部リードに1つのコンタクト端子を対応さ
せて配置し、コンタクト端子の外側からコンタクト駆動
装置によりコンタクト端子を押圧することにより、コン
タクト端子を位置決めされた、半導体素子の外部リード
に接触さぜ、半導体素子の機能検査を実施していた。
BACKGROUND ART Conventionally, in this type of semiconductor device testing equipment, one contact terminal is arranged in correspondence with each external lead of a semiconductor device to be measured, and the contact terminal is pressed from the outside of the contact terminal by a contact drive device. Accordingly, the function of the semiconductor element is tested by bringing the contact terminal into contact with the positioned external lead of the semiconductor element.

しかしながら、従来、パワートランジスタ,ダイオード
,サイリスクなどでは外部り−1ぐの数も少なく、かつ
、各外部リード間の間隔も大きいこ2 とから、センスライン,フォースラインをおのおの個別
のコンタクト端子に接続して正確にケルヒン式測定を実
施していたが、DIL(DualIn  Line)パ
ッケーシを用いた半導体素子では外部リードも多いため
センスライン,フォースラインに対して別々のコンタク
1〜端子を用いるという上述の方法は採用されていなか
った。
However, conventionally, in power transistors, diodes, silices, etc., the number of external leads is small and the distance between each external lead is large.2, so the sense line and force line are connected to individual contact terminals. However, since semiconductor devices using DIL (Dual In Line) packages have many external leads, it is difficult to use separate contact terminals for the sense line and force line. method was not adopted.

以下に従来の半導体素子の検査装置および検査方法につ
いて第2図を参照して説明する。
A conventional semiconductor device testing apparatus and method will be described below with reference to FIG.

第2図は従来の半導体素子の検査装置のコンタクト端子
部分を示すものである。第2図において、1は半導体測
定装置、2はフォースライン、3はセンスラインであり
、フォースライン2とセンスライン3は1組で半導体測
定装置の1端子を構成している。4cはコンタクト端子
を保持し、かつ、フォースライン2とセンスライン3を
結合しているコンタクト保持装置、5はコンタクト保持
装置4cで結合されたフォースライン2とセンスライン
3を被測定用の半導体素子に導通させるコンタクト端子
、6はコンタクト端子5を被測定用の半導体素子の外部
リードに接触さぜるコンタクl・駆動装置、7は被測定
用の半導体素子、8は被測定用の半導体素子を保持ずる
ソケッ1・(ハンドラー)の台座である。
FIG. 2 shows a contact terminal portion of a conventional semiconductor device testing device. In FIG. 2, 1 is a semiconductor measuring device, 2 is a force line, and 3 is a sense line, and a pair of force line 2 and sense line 3 constitute one terminal of the semiconductor measuring device. 4c is a contact holding device that holds the contact terminal and connects force line 2 and sense line 3; 5 is a semiconductor element for measuring force line 2 and sense line 3 that are connected by contact holding device 4c; 6 is a contact terminal/drive device that brings the contact terminal 5 into contact with the external lead of the semiconductor device to be measured, 7 is the semiconductor device to be measured, and 8 is the semiconductor device to be measured. This is the base of the holding socket 1 (handler).

以上のように構成された半導体素子の検査装置を用いた
、半導体検査方法について説明する。
A semiconductor testing method using the semiconductor device testing apparatus configured as described above will be described.

まず、ソケット(ハントラー)の台座8上で位置決めさ
れた被測定用の半導体素子7に、コンタクト駆動装置6
の押圧動作により、コンタクト端子5が半導体素子7の
外部リード7cに接触される。このとき、被測定用の半
導体素子7の外部リード7c,コンタクI・端子5,セ
ンスライン3,フォースライン2は電気的に導通され、
電気信号の授受が半導体測定装置1と被測定用の半導体
素子7との間で可能となる。これにより、被測定用の半
導体素子7の検査が実現できる。
First, the contact drive device 6 is attached to the semiconductor element 7 to be measured positioned on the base 8 of the socket (Handler)
By the pressing operation, the contact terminals 5 are brought into contact with the external leads 7c of the semiconductor element 7. At this time, the external lead 7c of the semiconductor element 7 to be measured, the contact I/terminal 5, the sense line 3, and the force line 2 are electrically connected.
Electric signals can be exchanged between the semiconductor measuring device 1 and the semiconductor element 7 to be measured. This makes it possible to test the semiconductor device 7 to be measured.

発明が解決しようとする課題 しかしながら前記従来の構成では、コンタクト端子5が
被測定用の半導体素子7の外部リード7cと線接触する
ようになっているので、接触面積が少ないために接触抵
抗が太き《なり、高精度の測定が不可能となる。さらに
、フォースライン2とセンスライン3を半導体素子の外
部リード1対に対してコンタクト端子5を2対接触さぜ
るのは難しいとの理由からコンタクト保持装置4Cて結
合させており、さらにコンタクト保持装置4Cから被測
定用の半導体素子7の外部リード7C迄に若干の距離が
あることから、正確なケルビン式測定を実現できないと
いう課題を有していた。
Problems to be Solved by the Invention However, in the conventional configuration, the contact terminal 5 is in line contact with the external lead 7c of the semiconductor element 7 to be measured, so the contact resistance is large due to the small contact area. Therefore, high precision measurement becomes impossible. Furthermore, since it is difficult to bring two pairs of contact terminals 5 into contact with one pair of external leads of a semiconductor element, the force line 2 and the sense line 3 are combined using a contact holding device 4C. Since there is a certain distance from the device 4C to the external lead 7C of the semiconductor element 7 to be measured, there is a problem in that accurate Kelvin measurement cannot be realized.

本発明は前記従来の課題を解決するもので、接触抵抗を
低減して高精度の測定を可能とし、正確なケルビン式測
定を実現できる半導体素子の検査装置および検査方法を
提供することを目的とする。
The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a semiconductor device testing device and testing method that can reduce contact resistance, enable high-precision measurement, and realize accurate Kelvin measurement. do.

課題を解決するための手段 この課題を解決するため本発明の半導体素子の検査装置
は、被測定物である半導体素子を保持する保持部材と、
前記半導体素子の外部リードの両側に、その外部リード
を間に挟むように外部リードから離間して配置された第
1,第2のコンタク5 ト端子と、前記第1,第2のコンタクト端子を前記保持
部材側に抑圧する抑圧手段を備え、前記抑圧手段により
、前記第1,第2のコンタクト端子を前記保持部材側に
押圧したとき、前記外部リードが前記第1,第2のコン
タクト端子間に挟持された状態で、第1,第2のコンタ
クト端子に接触されるように構成したものである。
Means for Solving the Problem In order to solve this problem, the semiconductor device inspection apparatus of the present invention includes a holding member that holds a semiconductor device as an object to be measured;
First and second contact terminals are arranged on both sides of the external lead of the semiconductor element so as to be spaced apart from the external lead so that the external lead is sandwiched therebetween, and the first and second contact terminals are arranged on both sides of the external lead of the semiconductor element. A suppressing means for suppressing the holding member side is provided, and when the suppressing means presses the first and second contact terminals toward the holding member side, the external lead is pressed between the first and second contact terminals. The contact terminal is configured to be contacted by the first and second contact terminals while being held between the terminals.

また本発明の半導体素子の検査方法は被測定物である半
導体素子を保持部材に保持し、前記半導体素子の外部リ
ードの両側に、第1,第2のコンタクト端子を両端子間
に前記外部リードが挟持されるように接触させ、これら
第1,第2のコンタクト端子を介して、前記半導体素子
を半導体測定装置に電気的に連結して前記半導体素子の
測定を行なうようにしたものである。
Further, in the semiconductor device testing method of the present invention, a semiconductor device as an object to be measured is held in a holding member, and first and second contact terminals are connected to both sides of the external lead of the semiconductor device between the two terminals. The semiconductor element is electrically connected to a semiconductor measuring device through these first and second contact terminals so that the semiconductor element can be measured.

作用 この構成によって被測定用の半導体素子の外部リードに
2つのコンタクト端子が接触されることになり、コンタ
クトの接触面積が大きくなる。さらに半導体測定装置か
ら被測定物である半導体素6 子の外部リード上までフォースラインとセンスラインを
別々に配設することができるので、被測定物である半導
体素子の外部リード上で正確なゲルビン式測定を実現で
きる。
Effect: With this configuration, two contact terminals come into contact with the external leads of the semiconductor element to be measured, increasing the contact area of the contacts. Furthermore, since the force line and sense line can be placed separately from the semiconductor measurement device to the external lead of the semiconductor device to be measured, it is possible to place the force line and sense line separately from the semiconductor measuring device to the external lead of the semiconductor device to be measured. Expression measurement can be realized.

実施例 以下、本発明の一実施例について、第1図を参照しなが
ら説明する。
EXAMPLE Hereinafter, an example of the present invention will be described with reference to FIG.

第1図は本発明の一実施例における半導体素子の検査装
置の全体図を示すものである。第1図において、]は半
導体測定装置、2はフォースライン、3はセンスライン
であり、これらは第2図に示す従来例の構成と同しであ
る。4aはフォースライン2とセンスライン3をコンタ
クト端子に接続し、コンタクト端子を保持するコンタク
ト保持装置、5aはフォースライン2に接続されたフォ
ースコンタクト端子、5bはセンスライン3に接続され
たセンスコンタクト端子、6はコンタクト駆動装置、7
は被測定物である半導体素子、8は被測定用の半導体素
子を保持するソケッl− (ハンドラー)の台座である
。コンタクト端子5a,5bは外部リード7aを間に挟
むように外部リード7aから離間して配置されている。
FIG. 1 shows an overall view of a semiconductor device testing apparatus according to an embodiment of the present invention. In FIG. 1, ] is a semiconductor measuring device, 2 is a force line, and 3 is a sense line, which are the same as the configuration of the conventional example shown in FIG. 4a is a contact holding device that connects force line 2 and sense line 3 to the contact terminal and holds the contact terminal; 5a is a force contact terminal connected to force line 2; and 5b is a sense contact terminal connected to sense line 3. , 6 is a contact drive device, 7
Reference numeral 8 indicates a semiconductor device as an object to be measured, and 8 is a pedestal of a socket l- (handler) that holds the semiconductor device to be measured. Contact terminals 5a and 5b are arranged apart from external lead 7a so that external lead 7a is sandwiched between them.

以上のように構成された本実施例の半導体素子の検査装
置を用いた検査方法について説明する。
An inspection method using the semiconductor device inspection apparatus of this embodiment configured as described above will be described.

まず、被測定物である半導体素子7がソノrツ1・(ハ
ントラー)の台座8に送られてきてこの台座8に位置決
めされる。次にコンタクト駆動装置6がフォースコンタ
クl一端子5aの外側より被測定用の半導体素子7の外
部リード7aに向って押圧する。このとき、被測定用の
半導体素子7の外部リード7aには、フォースコンタク
ト端子5aとセンスコンタクl・端子5bが外部リード
7aを間に挟持するように接触され、被測定用の半導体
素子7と半導体測定装置1は電気的に導通される。
First, the semiconductor element 7, which is an object to be measured, is sent to the pedestal 8 of the Sonoru 1 (Handler) and positioned on the pedestal 8. Next, the contact driving device 6 presses the force contact terminal 5a from the outside toward the external lead 7a of the semiconductor element 7 to be measured. At this time, the force contact terminal 5a and the sense contact terminal 5b are brought into contact with the external lead 7a of the semiconductor element 7 to be measured so as to sandwich the external lead 7a between them. The semiconductor measuring device 1 is electrically connected.

さらに、センスコンタクト端子5bは先端がU字状に弯
曲さぜてあるのて、このU字状部がスプリングの役目を
はたし、被測定用の半導体素子7の外部リードへの抑圧
負荷を柔げ、センスコンタクト端子5bの被測定用の半
導体素子7の外部リードに対する接触面積を増大させて
いる。
Furthermore, since the tip of the sense contact terminal 5b is curved into a U-shape, this U-shaped portion acts as a spring and reduces the suppressing load on the external leads of the semiconductor element 7 to be measured. This increases the contact area of the sense contact terminal 5b with the external lead of the semiconductor element 7 to be measured.

以上のように本実施例によれば、フォースコンタクト端
子5aとセンスコンタクト端子5bをおのおの個別に設
けているために、被測定用の半導体素子7の外部リード
7aと接触ずる面積が大きくなり、接触抵抗を低減する
ことができ、高精度の測定が可能となる。さらに、被測
定用の半導体素子7の外部リード7a部分までフォース
ラインとセンスラインを別々にしているために、リード
とフォースラインとの間の接触抵抗によって電圧降下が
発生しても正確なケルヒン式測定を実現できる。
As described above, according to this embodiment, since the force contact terminals 5a and the sense contact terminals 5b are provided individually, the area of contact with the external leads 7a of the semiconductor element 7 to be measured becomes large. It is possible to reduce resistance and enable highly accurate measurement. Furthermore, since the force line and the sense line are separated up to the external lead 7a of the semiconductor element 7 to be measured, the Kerkhin method is accurate even if a voltage drop occurs due to contact resistance between the lead and the force line. measurement can be realized.

なお、本実施例ではフォースコンタクト端子5aとセン
スコンタクト端子5bを被測定用の半導体素子7のリー
ドに対して左右に配したが、フラットパッケージのよう
に左右配置が難しい場合には上下に配しても良いことは
いうまでもない。
In this embodiment, the force contact terminals 5a and the sense contact terminals 5b are arranged on the left and right sides of the leads of the semiconductor element 7 to be measured, but in cases where horizontal arrangement is difficult as in the case of a flat package, they may be arranged above and below. Needless to say, it's a good thing.

発明の効果 以上のように本発明によれば、フォースコンタクト端子
とセンスコンタクト端子ををおのおの個別に設けている
ので、接触抵抗を低減することの9 できる優れた半導体素子の検査装置および検査方法を実
現できる。
Effects of the Invention As described above, according to the present invention, since the force contact terminal and the sense contact terminal are each provided separately, an excellent semiconductor device testing apparatus and method capable of reducing contact resistance is provided. realizable.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例における半導体素子の検査装
置を示す構成図、第2図は従来の半導体素子の検査装置
を示す構成図である。 1・・・・・・半導体測定装置、2・・・・・・フォー
スライン、3・・・・・・センスライン、4a・・・・
・・コンタクト保持装置、5a・・・・・・フォースコ
ンタクト端子、5b・・・・・・センスコンタクト端子
、6・・・・・・コンタクト駆動装置、7・・・・・・
被測定用の半導体素子、7a・・・・・・被測定用の半
導体素子の外部リード、8・・・・・・ソケット(ハン
1・ラー)の台座。
FIG. 1 is a configuration diagram showing a semiconductor device testing apparatus according to an embodiment of the present invention, and FIG. 2 is a configuration diagram showing a conventional semiconductor device testing device. 1... Semiconductor measuring device, 2... Force line, 3... Sense line, 4a...
...Contact holding device, 5a...Force contact terminal, 5b...Sense contact terminal, 6...Contact drive device, 7...
Semiconductor element to be measured, 7a... External lead of semiconductor element to be measured, 8... Base of socket (handler 1/ler).

Claims (2)

【特許請求の範囲】[Claims] (1)被測定物である半導体素子を保持する保持部材と
、前記半導体素子の外部リードの両側に、その外部リー
ドを間に挟むように外部リードから離間して配置された
第1、第2のコンタクト端子と、前記第1、第2のコン
タクト端子を前記保持部材側に押圧する押圧手段を備え
、前記押圧手段により、前記第1、第2のコンタクト端
子を前記保持部材側に押圧したとき、前記外部リードが
前記第1、第2のコンタクト端子間に挟持された状態で
、第1、第2のコンタクト端子に接触されるように構成
した半導体素子の検査装置。
(1) A holding member that holds a semiconductor element as an object to be measured, and first and second members arranged on both sides of an external lead of the semiconductor element so as to be spaced apart from the external lead so as to sandwich the external lead therebetween. and a pressing means for pressing the first and second contact terminals toward the holding member, and when the pressing means presses the first and second contact terminals toward the holding member. . A semiconductor device testing device, wherein the external lead is sandwiched between the first and second contact terminals and is brought into contact with the first and second contact terminals.
(2)被測定物である半導体素子を保持部材に保持し、
前記半導体素子の外部リードの両側に、第1、第2のコ
ンタクト端子を両端子間に前記外部リードが挟持される
ように接触させ、これら第1、第2のコンタクト端子を
介して、前記半導体素子を半導体測定装置に電気的に連
結して前記半導体素子の測定を行なうようにした半導体
素子の検査方法。
(2) Holding the semiconductor element as the object to be measured on the holding member,
First and second contact terminals are brought into contact with both sides of the external lead of the semiconductor element so that the external lead is sandwiched between the two terminals, and the semiconductor element is connected to the semiconductor element through the first and second contact terminals. A method for testing a semiconductor device, the device being electrically connected to a semiconductor measuring device to measure the semiconductor device.
JP2011414A 1990-01-19 1990-01-19 Method and apparatus for testing semiconductor device Pending JPH03215956A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011414A JPH03215956A (en) 1990-01-19 1990-01-19 Method and apparatus for testing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011414A JPH03215956A (en) 1990-01-19 1990-01-19 Method and apparatus for testing semiconductor device

Publications (1)

Publication Number Publication Date
JPH03215956A true JPH03215956A (en) 1991-09-20

Family

ID=11777380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011414A Pending JPH03215956A (en) 1990-01-19 1990-01-19 Method and apparatus for testing semiconductor device

Country Status (1)

Country Link
JP (1) JPH03215956A (en)

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