JPH03216657A - Photosensitive resin composition - Google Patents
Photosensitive resin compositionInfo
- Publication number
- JPH03216657A JPH03216657A JP2011944A JP1194490A JPH03216657A JP H03216657 A JPH03216657 A JP H03216657A JP 2011944 A JP2011944 A JP 2011944A JP 1194490 A JP1194490 A JP 1194490A JP H03216657 A JPH03216657 A JP H03216657A
- Authority
- JP
- Japan
- Prior art keywords
- formula
- diamine
- denotes
- bis
- tetracarboxylic dianhydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011342 resin composition Substances 0.000 title claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 20
- 150000004985 diamines Chemical class 0.000 claims abstract description 16
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 10
- 125000004122 cyclic group Chemical group 0.000 claims abstract description 7
- 239000003999 initiator Substances 0.000 claims abstract description 4
- CHDKQNHKDMEASZ-UHFFFAOYSA-N n-prop-2-enoylprop-2-enamide Chemical compound C=CC(=O)NC(=O)C=C CHDKQNHKDMEASZ-UHFFFAOYSA-N 0.000 claims abstract 3
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims 3
- 238000007334 copolymerization reaction Methods 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 abstract description 21
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract description 4
- 229920001577 copolymer Polymers 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000013329 compounding Methods 0.000 abstract 1
- 238000005336 cracking Methods 0.000 abstract 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 37
- 239000009719 polyimide resin Substances 0.000 description 17
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- -1 diacrylamide compound Chemical class 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 5
- 150000002923 oximes Chemical class 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 208000017983 photosensitivity disease Diseases 0.000 description 3
- 231100000434 photosensitization Toxicity 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- YXOKJIRTNWHPFS-UHFFFAOYSA-N 2,5-dimethylhexane-1,6-diamine Chemical compound NCC(C)CCC(C)CN YXOKJIRTNWHPFS-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 2
- SJHPCNCNNSSLPL-CSKARUKUSA-N (4e)-4-(ethoxymethylidene)-2-phenyl-1,3-oxazol-5-one Chemical class O1C(=O)C(=C/OCC)\N=C1C1=CC=CC=C1 SJHPCNCNNSSLPL-CSKARUKUSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- VYMSWGOFSKMMCE-UHFFFAOYSA-N 10-butyl-2-chloroacridin-9-one Chemical compound ClC1=CC=C2N(CCCC)C3=CC=CC=C3C(=O)C2=C1 VYMSWGOFSKMMCE-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- VEUMBMHMMCOFAG-UHFFFAOYSA-N 2,3-dihydrooxadiazole Chemical compound N1NC=CO1 VEUMBMHMMCOFAG-UHFFFAOYSA-N 0.000 description 1
- IAHOUQOWMXVMEH-UHFFFAOYSA-N 2,4,6-trinitroaniline Chemical compound NC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O IAHOUQOWMXVMEH-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 1
- DNQVZBMRPWXYME-UHFFFAOYSA-N 2,5-dimethylnonane-1,9-diamine Chemical compound NCC(C)CCC(C)CCCCN DNQVZBMRPWXYME-UHFFFAOYSA-N 0.000 description 1
- SFXPLYOSNTZJFW-UHFFFAOYSA-N 2,6-bis[[4-(diethylamino)phenyl]methylidene]-4-methylcyclohexan-1-one Chemical compound C1=CC(N(CC)CC)=CC=C1C=C(CC(C)C1)C(=O)C1=CC1=CC=C(N(CC)CC)C=C1 SFXPLYOSNTZJFW-UHFFFAOYSA-N 0.000 description 1
- LIFWPLOFXPGAJJ-UHFFFAOYSA-N 2,6-bis[[4-(diethylamino)phenyl]methylidene]cyclohexan-1-one Chemical compound C1=CC(N(CC)CC)=CC=C1C=C(CCC1)C(=O)C1=CC1=CC=C(N(CC)CC)C=C1 LIFWPLOFXPGAJJ-UHFFFAOYSA-N 0.000 description 1
- SDWGBHZZXPDKDZ-UHFFFAOYSA-N 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=C(Cl)C(C(O)=O)=C2C(C(=O)O)=CC(Cl)=C(C(O)=O)C2=C1C(O)=O SDWGBHZZXPDKDZ-UHFFFAOYSA-N 0.000 description 1
- MJAVQHPPPBDYAN-UHFFFAOYSA-N 2,6-dimethylbenzene-1,4-diamine Chemical compound CC1=CC(N)=CC(C)=C1N MJAVQHPPPBDYAN-UHFFFAOYSA-N 0.000 description 1
- YCKZAOPKIOWTEH-UHFFFAOYSA-N 2-[[4-(dimethylamino)phenyl]methylidene]-3h-inden-1-one Chemical compound C1=CC(N(C)C)=CC=C1C=C1C(=O)C2=CC=CC=C2C1 YCKZAOPKIOWTEH-UHFFFAOYSA-N 0.000 description 1
- LOCWBQIWHWIRGN-UHFFFAOYSA-N 2-chloro-4-nitroaniline Chemical compound NC1=CC=C([N+]([O-])=O)C=C1Cl LOCWBQIWHWIRGN-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- XFOHWECQTFIEIX-UHFFFAOYSA-N 2-nitrofluorene Chemical compound C1=CC=C2C3=CC=C([N+](=O)[O-])C=C3CC2=C1 XFOHWECQTFIEIX-UHFFFAOYSA-N 0.000 description 1
- YTPSFXZMJKMUJE-UHFFFAOYSA-N 2-tert-butylanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=CC(C(C)(C)C)=CC=C3C(=O)C2=C1 YTPSFXZMJKMUJE-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- FMXFZZAJHRLHGP-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)sulfonylphthalic acid Chemical compound OC(=O)C1=CC=CC(S(=O)(=O)C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O FMXFZZAJHRLHGP-UHFFFAOYSA-N 0.000 description 1
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- UCFMKTNJZCYBBJ-UHFFFAOYSA-N 3-[1-(2,3-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)C1=CC=CC(C(O)=O)=C1C(O)=O UCFMKTNJZCYBBJ-UHFFFAOYSA-N 0.000 description 1
- YEEIWUUBRYZFEH-UHFFFAOYSA-N 3-methoxyhexane-1,6-diamine Chemical compound NCCC(OC)CCCN YEEIWUUBRYZFEH-UHFFFAOYSA-N 0.000 description 1
- LTZQJVGOFCCDQA-UHFFFAOYSA-N 3-methylhexane-1,6-diamine Chemical compound NCCC(C)CCCN LTZQJVGOFCCDQA-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- AVCOFPOLGHKJQB-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfonylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AVCOFPOLGHKJQB-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- IJJNNSUCZDJDLP-UHFFFAOYSA-N 4-[1-(3,4-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 IJJNNSUCZDJDLP-UHFFFAOYSA-N 0.000 description 1
- HSBOCPVKJMBWTF-UHFFFAOYSA-N 4-[1-(4-aminophenyl)ethyl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)C1=CC=C(N)C=C1 HSBOCPVKJMBWTF-UHFFFAOYSA-N 0.000 description 1
- TYMLOMAKGOJONV-UHFFFAOYSA-N 4-nitroaniline Chemical compound NC1=CC=C([N+]([O-])=O)C=C1 TYMLOMAKGOJONV-UHFFFAOYSA-N 0.000 description 1
- CUARLQDWYSRQDF-UHFFFAOYSA-N 5-Nitroacenaphthene Chemical compound C1CC2=CC=CC3=C2C1=CC=C3[N+](=O)[O-] CUARLQDWYSRQDF-UHFFFAOYSA-N 0.000 description 1
- MBRGOFWKNLPACT-UHFFFAOYSA-N 5-methylnonane-1,9-diamine Chemical compound NCCCCC(C)CCCCN MBRGOFWKNLPACT-UHFFFAOYSA-N 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 1
- NPKSPKHJBVJUKB-UHFFFAOYSA-N N-phenylglycine Chemical compound OC(=O)CNC1=CC=CC=C1 NPKSPKHJBVJUKB-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- AVRWEULSKHQETA-UHFFFAOYSA-N Thiophene-2 Chemical compound S1C=2CCCCCC=2C(C(=O)OC)=C1NC(=O)C1=C(F)C(F)=C(F)C(F)=C1F AVRWEULSKHQETA-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- ZIQPQYFSSSHQBP-UHFFFAOYSA-N acetyl 2,3-dihydroxypropanoate Chemical compound CC(=O)OC(=O)C(O)CO ZIQPQYFSSSHQBP-UHFFFAOYSA-N 0.000 description 1
- IVHKZGYFKJRXBD-UHFFFAOYSA-N amino carbamate Chemical compound NOC(N)=O IVHKZGYFKJRXBD-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 1
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000000332 coumarinyl group Chemical class O1C(=O)C(=CC2=CC=CC=C12)* 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 1
- NZZIMKJIVMHWJC-UHFFFAOYSA-N dibenzoylmethane Chemical compound C=1C=CC=CC=1C(=O)CC(=O)C1=CC=CC=C1 NZZIMKJIVMHWJC-UHFFFAOYSA-N 0.000 description 1
- WMKGGPCROCCUDY-PHEQNACWSA-N dibenzylideneacetone Chemical compound C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1 WMKGGPCROCCUDY-PHEQNACWSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 150000002332 glycine derivatives Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- LYGWPQUPVNLSPG-UHFFFAOYSA-N icosane-2,17-diamine Chemical compound CCCC(N)CCCCCCCCCCCCCCC(C)N LYGWPQUPVNLSPG-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- RTWNYYOXLSILQN-UHFFFAOYSA-N methanediamine Chemical compound NCN RTWNYYOXLSILQN-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- REOJLIXKJWXUGB-UHFFFAOYSA-N mofebutazone Chemical group O=C1C(CCCC)C(=O)NN1C1=CC=CC=C1 REOJLIXKJWXUGB-UHFFFAOYSA-N 0.000 description 1
- SKACCCDFHQZGIA-UHFFFAOYSA-N n-(4-nitronaphthalen-1-yl)acetamide Chemical compound C1=CC=C2C(NC(=O)C)=CC=C([N+]([O-])=O)C2=C1 SKACCCDFHQZGIA-UHFFFAOYSA-N 0.000 description 1
- KADGVXXDDWDKBX-UHFFFAOYSA-N naphthalene-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C21 KADGVXXDDWDKBX-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- BBYQSYQIKWRMOE-UHFFFAOYSA-N naphthalene-1,2,6,7-tetracarboxylic acid Chemical compound C1=C(C(O)=O)C(C(O)=O)=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 BBYQSYQIKWRMOE-UHFFFAOYSA-N 0.000 description 1
- OLAPPGSPBNVTRF-UHFFFAOYSA-N naphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1C(O)=O OLAPPGSPBNVTRF-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- NQRLPDFELNCFHW-UHFFFAOYSA-N nitroacetanilide Chemical compound CC(=O)NC1=CC=C([N+]([O-])=O)C=C1 NQRLPDFELNCFHW-UHFFFAOYSA-N 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- VQXBKCWOCJSIRT-UHFFFAOYSA-N octadecane-1,12-diamine Chemical compound CCCCCCC(N)CCCCCCCCCCCN VQXBKCWOCJSIRT-UHFFFAOYSA-N 0.000 description 1
- NWRSLSNMQXMRHQ-UHFFFAOYSA-N octadecane-7,7-diamine Chemical compound CCCCCCCCCCCC(N)(N)CCCCCC NWRSLSNMQXMRHQ-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- FZUGPQWGEGAKET-UHFFFAOYSA-N parbenate Chemical compound CCOC(=O)C1=CC=C(N(C)C)C=C1 FZUGPQWGEGAKET-UHFFFAOYSA-N 0.000 description 1
- CYPCCLLEICQOCV-UHFFFAOYSA-N phenanthrene-1,2,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C3=CC=C(C(=O)O)C(C(O)=O)=C3C=CC2=C1 CYPCCLLEICQOCV-UHFFFAOYSA-N 0.000 description 1
- UMSVUULWTOXCQY-UHFFFAOYSA-N phenanthrene-1,2,7,8-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C2C3=CC=C(C(=O)O)C(C(O)=O)=C3C=CC2=C1C(O)=O UMSVUULWTOXCQY-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- YKWDNEXDHDSTCU-UHFFFAOYSA-N pyrrolidine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1NC(C(O)=O)C(C(O)=O)C1C(O)=O YKWDNEXDHDSTCU-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 150000003627 tricarboxylic acid derivatives Chemical class 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は密着性が良く、弾性率が小さく、しかも保存安
定性に優れた、高感度で高耐熱の感光性ポリイミド樹脂
組成物に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a highly sensitive and heat-resistant photosensitive polyimide resin composition that has good adhesion, a small elastic modulus, and excellent storage stability. be.
[従来の技術]
従来、半導体素子の表面保護膜、居間絶縁膜などには、
耐熱性が優れ、また卓越した電気的特性、機械的特性な
どを有するポリイミド樹脂が用いられているが、近年゛
15導体素子の高果積化、大型化、封止樹脂パッケージ
の薄型化、小型化、半田リフローによる表面実装方式な
どへの移行により耐熱サイクル性、耐熱ショック性等の
著しい向上の要求があり、これまでのポリイミド樹脂で
は、対応が困難となってきた。[Conventional technology] Conventionally, surface protection films for semiconductor devices, living room insulation films, etc.
Polyimide resin is used because it has excellent heat resistance and excellent electrical and mechanical properties, but in recent years, 15 conductor elements have become more densely packed and larger, and sealing resin packages have become thinner and smaller. With the shift to surface mounting methods using solder reflow technology, there are demands for significant improvements in heat cycle resistance, heat shock resistance, etc., and it has become difficult for conventional polyimide resins to meet these demands.
この対策として、例えばポリイミド樹脂にシリコーン成
分を導入して、密着性を上げ弾性率を低くすることが知
られている。(特開昭61−64730号公報、特開昭
62−223228号公報等)一方、ポリイミド樹脂自
身に感光性を付与する技術が最近注目を集めてきた。As a countermeasure against this problem, it is known that, for example, a silicone component is introduced into the polyimide resin to increase adhesion and lower the elastic modulus. (JP-A-61-64730, JP-A-62-223228, etc.) On the other hand, a technique for imparting photosensitivity to polyimide resin itself has recently attracted attention.
これらの感光性を付与したポリイミド樹脂を使用すると
、付与していないポリイミド樹脂に比較してパターン作
成工程の簡素化効果があるだけでなく、毒性の強いエッ
チング液を使用しなくてすむので、安全、公害上も優れ
ており、ポリイミド樹脂の感光性化はポリイミド樹脂の
高密着、低弾性率化とともに今後一層重要な技術となる
ことが期待されている。Using polyimide resins that have been given these photosensitizers not only simplifies the pattern creation process compared to polyimide resins that have not been given photosensitivity, but also eliminates the need to use highly toxic etching solutions, making them safer. It is also excellent in terms of pollution, and photosensitization of polyimide resin is expected to become an even more important technology in the future, along with the development of high adhesion and low elastic modulus of polyimide resin.
感光性ポリイミド樹脂としては、例えば下式で示される
ような構造のエステル基で感光性基を付与したポリイミ
ド前駈体組成物(特公昭55−41422号公軸)ある
いは下式
で示されるような構造のポリアミック酸に化学線により
2量化、または重合可能な炭素一炭素二重結合およびア
ミノ基または、その四級化塩を含む化合物を添加した組
成物(例えば特開詔54−145794号公報)などが
知られている。As the photosensitive polyimide resin, for example, a polyimide precursor composition to which a photosensitive group is added with an ester group having a structure as shown in the following formula (Japanese Patent Publication No. 55-41422) or as shown in the following formula. A composition in which a compound containing a carbon-carbon double bond and an amino group or a quaternized salt thereof that can be dimerized or polymerized by actinic radiation is added to a polyamic acid having the structure (e.g., Japanese Patent Application Laid-open No. 54-145794) etc. are known.
これらは、いずれも適当な有機溶剤に溶解し、フェス状
態で塗布、乾燥した後、フォトマスクを介して紫外線照
射し、現像、リンス処理して所望のパターンを得、さら
に加熱処理することによりポリイミド被膜としている。All of these are dissolved in a suitable organic solvent, applied in a face state, dried, exposed to ultraviolet light through a photomask, developed and rinsed to obtain the desired pattern, and then heat-treated to form polyimide. It is a coating.
しかし、かかる従来の感光化技術をポリイミド樹脂成分
にシリコーン基を導入した高密着、低弾性率のポリイミ
ド樹脂に適用すると、紫外線を照射してもバターニング
することは難しいか、または著しく感度が低く、半導体
工業で通常用いられている露光装置で処理するには不充
分であった。However, when such conventional photosensitization technology is applied to a polyimide resin with high adhesion and low elastic modulus in which a silicone group is introduced into the polyimide resin component, it is difficult to pattern the polyimide resin even when irradiated with ultraviolet rays, or the sensitivity is extremely low. However, the exposure equipment commonly used in the semiconductor industry was insufficient for processing.
更には、これらの感光性ポリイミド樹脂の膜厚を厚くし
ていくと光感度が極端に低下してしまい、適正露光時間
が極端に長くなってしまうという欠点があった。Furthermore, when the film thickness of these photosensitive polyimide resins is increased, the photosensitivity is extremely reduced and the proper exposure time is extremely long.
また、吸水性が大きいために、露光皮膜を長期保存する
と、現像時間が長くなるだけでなく、できたパターンが
クラックを起こすなどの不都合があった。In addition, because of its high water absorption, when the exposed film is stored for a long period of time, it not only takes a long time to develop, but also causes problems such as cracks in the formed pattern.
[発明が解決しようとする課題]
本発明の目的とするところは、ポリアミック酸中にシリ
コーン基を導入して密着性を向上させ、弾性率を低下さ
せたにもかかわらず高感度の光硬化性を有し、保存安定
性が良く、さらに硬化後の被膜の耐熱性に優れた感光性
樹脂組成物を提供するにある。[Problems to be Solved by the Invention] The purpose of the present invention is to improve adhesion by introducing silicone groups into polyamic acid, and to achieve highly sensitive photocurability despite lowering the elastic modulus. It is an object of the present invention to provide a photosensitive resin composition which has the following properties, has good storage stability, and has an excellent heat resistance after curing.
[課題を解決するための手段]
本発明は、
下記式〔
■〕で示されるシリコーン
系ジアミン
(式中rl:
1〜50)
を0.5〜25重量%共重合した、
下記式( II )で示
されるポリアミック酸(A)
(式中R0、
R2:芳香族環状基
n :
1〜2、
m
: 0〜2
)
に、
下記式( III )で示されるジアクリルアミド化
合物(B)
1
0
(III)
(式中R 3 : 一H , −C H 3R4,R5
: 一H ,−CH:l,−cH20H )を必須成分
とし、(A)100重量部に対して(B)20〜200
重量部及び必要に応じて増感剤及び/または開始剤を配
してなる感光性樹脂組成物を用いることにある。[Means for Solving the Problems] The present invention provides the following formula (II), which is obtained by copolymerizing 0.5 to 25% by weight of a silicone diamine (rl: 1 to 50) represented by the following formula [1]. A diacrylamide compound (B) represented by the following formula (III) is added to the polyamic acid (A) represented by the following formula (R0, R2: aromatic cyclic group n: 1-2, m: 0-2). III) (In the formula, R 3 : -H , -C H 3R4, R5
: -H, -CH:l, -cH20H) is an essential component, and (B) is 20 to 200 parts by weight per 100 parts by weight of (A).
The purpose is to use a photosensitive resin composition containing parts by weight and, if necessary, a sensitizer and/or an initiator.
[作用]
本発明において用いる一般式CI)で示されるシリコー
ン系ジアミンはポリイミド被膜の密着性を向上させ、弾
性率を低下させる効果を有する。[Function] The silicone diamine represented by the general formula CI) used in the present invention has the effect of improving the adhesion of the polyimide film and lowering the elastic modulus.
シリコーン系ジアミンの重合度nは1〜50であること
が必要であり、nが1未満であると密着性?向上させ、
弾性率を低下させる効果が得られず、またnが50を越
える長鎖シリコーン系ジアミンを使用すると、テトラカ
ルボン酸二無水物との反応が定量的に進行しにくくなり
、未反応物として残存し、分子量が大きくならないばか
りか柔軟性を低下させ、クラックを発生し易くなるので
好ましくない。The degree of polymerization n of the silicone diamine needs to be 1 to 50, and if n is less than 1, the adhesion will be poor. improve,
If the effect of lowering the elastic modulus is not obtained and a long chain silicone diamine with n exceeding 50 is used, the reaction with the tetracarboxylic dianhydride will be difficult to proceed quantitatively, and it will remain as an unreacted product. This is not preferable because it not only does not increase the molecular weight but also reduces flexibility and makes cracks more likely to occur.
またシリコーン系ジアミンの使用景は、ポリアミック酸
成分に対して0.5〜25重量%が好ましい。The silicone diamine is preferably used in an amount of 0.5 to 25% by weight based on the polyamic acid component.
0.5重量%未満では密着性の向上、弾性率の低下の効
果が得られず、また25重量%を越えると耐熱性が苦し
く低下し、ポリイミド樹脂本来の特徴が得られなくなる
ので好ましくない。If it is less than 0.5% by weight, the effects of improving adhesion and lowering the elastic modulus cannot be obtained, and if it exceeds 25% by weight, the heat resistance will be severely reduced, making it impossible to obtain the characteristics inherent to polyimide resins, which is not preferable.
本発明において用いる一般式〔1■〕で示されるポリア
ミック酸(A)は、R■の芳香族環状基を有する酸と、
R2の芳香族環状基を有するアミンによって合成される
。R0の芳香族環状基を有する酸としては、n=1のト
リカルボン酸無水物やn=2のテトラカルボン酸二無水
物などが用いられ、酸無水物成分は1種類でも、2種類
以上の混合物でもかまわない。用いられる酸無水物の種
類としては、例えば、トリメリット酸無水物、ピロメリ
ット酸二無水物、ベンゼン−1.2,3.4−テトラカ
ルボン酸二無水物、3.3’ ,4.4’−ベンゾフェ
ノンテトラカルボン酸二無水物、2.2’ ,3.3’
−ベンゾフェノンテトラカルボン酸二無水物、2,3.
3’ ,4’−ベンゾフェノンテトラカルボン酸二無水
物、ナフタレン−2.3,6.7−テトラカルボン酸二
無水物、ナフタレン−1.2,5.6−テトラカルボン
酸二無水物、ナフタレン−1.2,4.5−テトラカル
ボン酸二無水物、ナフタレン−1.4,5.8−テトラ
カルポン酸二無水物、ナフタレン−1.2,6.7−テ
トラカルボン酸二無水物、4,8−ジメチル−1.2,
3,5,6.7−ヘキサヒド口ナフタレン−1.2,5
.6−テトラカルポン酸二無水物、4,8−ジメチル−
1.2,3,5,6.7−へキサヒド口ナフタレン−2
.3,6.7−テトラカルポン酸二無水物、2,6−ジ
クロ口ナフタレン−1.4,5.8−テトラカルボン酸
二無水物、2.7−ジクロ口ナフタレン−1.4,5.
8−テトラカルボン酸二無水物、2,3,6.7−テト
ラク口口ナフタレン−1.4,5.8−テトラカルボン
酸二無水物、l , 4 ,5,8−テトラク口口ナフ
タレン−2.3,6.7−テトラカルボン酸二無水物、
3.3’ ,4.4’−ジフェニルテトラカルボン酸二
無水物、2.2’ ,3.3’−ジフェニルテトラカル
ボン酸二無水物、2,3.3’ ,4’−ジフェニルテ
トラカルボン酸二無水物、3.3”,4.4”−p−テ
ルフェニルテトラカルボン酸二無水物、2.2”,3.
3”−p−テルフェニルテトラカルボン酸二無水物、2
,3,3″,4”−p−テルフェニルテトラカルボン酸
二無水物、2,2−ビス(2,3−ジカルボキシフェニ
ル)一プロパンニ無水物、2.2−ビス(3,4−ジカ
ルボキシフェニル)一プロパンニ無水物、ビス(2,3
−ジカルポキシフェニル)エーテルニ無水物、ビス(3
.4−ジカルボキシフェニル)エーテルニ無水物、ビス
(2.3−ジカルポキシフェニル)メタンニ無水物、ビ
ス(3.4−ジカルボキシフェニル)メタンニ無水物、
ビス(2.3−ジカルボキシフェニル)スルホンニ無水
物、ビス(3,4−ジカルボキシフェニル)スルホンニ
無水物、1.1−ビス(2,3−ジカルボキシフェニル
)エタンニ無水物、1,1−ビス(3,4−ジカルボキ
シフェニル)エタンニ無水物、ペリレン−2.3,8.
9−テトラカルボン酸二無水物、ペリレン−3.4,9
.10−テトラカルボン酸二無水物、ベリレン−4.5
,10.11−テトラカルボン酸二無水物、ベリレン−
5.6,11.12−テトラカルボン酸二無水物、フェ
ナンスレンー1,2,7.8−テトラカルボン酸二無水
物、フェナンスレンー1,2,6.7−テトラカルボン
酸二無水物、フェナンスレン−1,2,9,lO−テト
ラカルボン酸二無水物、シクロペンタン−1.2,3.
4−テトラカルボン酸二無水物、ビラジン−2.3,5
.6−テトラカルボン酸二無水物、ビロリジン−2,3
,4.5−テトラカルボン酸二無水物、チオフェン−2
.3,4.5−テトラカルボン酸二無水物などがあげら
れるが、これらに限定されるものではない。The polyamic acid (A) represented by the general formula [1■] used in the present invention is an acid having an aromatic cyclic group of R■,
It is synthesized using an amine having an aromatic cyclic group as R2. As the acid having an aromatic cyclic group of R0, tricarboxylic acid anhydride with n=1 or tetracarboxylic dianhydride with n=2 are used, and the acid anhydride component may be one type or a mixture of two or more types. But it doesn't matter. The types of acid anhydrides used include, for example, trimellitic anhydride, pyromellitic dianhydride, benzene-1.2,3.4-tetracarboxylic dianhydride, 3.3', 4.4 '-benzophenonetetracarboxylic dianhydride, 2.2', 3.3'
-benzophenone tetracarboxylic dianhydride, 2,3.
3',4'-benzophenonetetracarboxylic dianhydride, naphthalene-2,3,6,7-tetracarboxylic dianhydride, naphthalene-1,2,5,6-tetracarboxylic dianhydride, naphthalene- 1.2,4.5-tetracarboxylic dianhydride, naphthalene-1.4,5.8-tetracarboxylic dianhydride, naphthalene-1.2,6.7-tetracarboxylic dianhydride, 4, 8-dimethyl-1.2,
3,5,6.7-hexahydro-naphthalene-1.2,5
.. 6-tetracarboxylic dianhydride, 4,8-dimethyl-
1.2,3,5,6.7-Hexahydride naphthalene-2
.. 3,6.7-Tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1.4,5.8-tetracarboxylic dianhydride, 2.7-dichloronaphthalene-1.4,5.
8-tetracarboxylic dianhydride, 2,3,6,7-tetracarboxylic naphthalene-1,4,5,8-tetracarboxylic dianhydride, l,4,5,8-tetracarboxylic naphthalene- 2.3,6.7-tetracarboxylic dianhydride,
3.3',4.4'-diphenyltetracarboxylic dianhydride, 2.2',3.3'-diphenyltetracarboxylic dianhydride, 2,3.3',4'-diphenyltetracarboxylic acid dianhydride, 3.3", 4.4"-p-terphenyltetracarboxylic dianhydride, 2.2", 3.
3”-p-terphenyltetracarboxylic dianhydride, 2
, 3,3″,4″-p-terphenyltetracarboxylic dianhydride, 2,2-bis(2,3-dicarboxyphenyl)-propanihydride, 2,2-bis(3,4-dicarboxylic dianhydride) carboxyphenyl) monopropanihydride, bis(2,3
-dicarpoxyphenyl)ether dianhydride, bis(3
.. 4-dicarboxyphenyl)ether dianhydride, bis(2,3-dicarboxyphenyl)methanidianhydride, bis(3.4-dicarboxyphenyl)methanidianhydride,
Bis(2,3-dicarboxyphenyl)sulfone dianhydride, bis(3,4-dicarboxyphenyl)sulfone dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, 1,1- Bis(3,4-dicarboxyphenyl)ethane dianhydride, perylene-2.3,8.
9-tetracarboxylic dianhydride, perylene-3.4,9
.. 10-tetracarboxylic dianhydride, berylene-4.5
, 10.11-tetracarboxylic dianhydride, berylene-
5.6,11.12-tetracarboxylic dianhydride, phenanthrene-1,2,7.8-tetracarboxylic dianhydride, phenanthrene-1,2,6.7-tetracarboxylic dianhydride, phenanthrene-1 ,2,9,1O-tetracarboxylic dianhydride, cyclopentane-1.2,3.
4-tetracarboxylic dianhydride, virazine-2.3,5
.. 6-tetracarboxylic dianhydride, pyrrolidine-2,3
, 4.5-tetracarboxylic dianhydride, thiophene-2
.. Examples include, but are not limited to, 3,4.5-tetracarboxylic dianhydride.
R2の芳香族環状基を有するアミンとしては、m=0の
ジアミンやm=1のジアミノカルボン酸、m=2のジア
ミノジカルボン酸などが用いられ、アミン成分は1種類
でも、2種類以上の混合物でもかまわない。用いられる
アミンの種類としては例えばm−フェニレンージアミン
、l−イソプロビル−2,4−フェニレンージアミン、
p−フエニレンージアミン、4,4′−ジアミノージフ
エニルプロパン、3.3’−ジアミノージフェニルプロ
パン、4,4′−ジアミノージフェニルエタン、3,3
′−ジアミノージフェニルエタン、4,4′−ジアミノ
ージフェニルメタン、3.3’−ジアミノージフェニル
メタン、4,4′−ジアミノージフェニルスルフィド、
3.3′−ジアミノージフェニルスルフィド、4,4′
−ジアミノージフェニルスルホン、3.3′−ジアミノ
ージフェニルスルホン、4,4′−ジアミノージフェニ
ルエーテル、3,3′−ジアミノージフェニルエーテル
、ベンジジン、3,3′−ジアミノービフェニル、3,
3′−ジメチル−4,4′−ジアミノービフェニル、3
.3′−ジメトキシーベンジジン、4.4”−ジアミノ
ーp−テルフェニル、3.3″−ジアミノーp−テルフ
ェニル、ビス(p−アミノーシク口ヘキシル)メタン、
ビス(p一β−アミノーt−プチルフェニル)エーテル
、ビス(p−β−メチル−δ〜アミノペンチル)ベンゼ
ン、ρ−ビス(2−メチル−4−アミノーペンチル)ベ
ンゼン、p−ビス(1.1−ジメチル−5−アミノーベ
ンチル)ベンゼン、1,5−ジアミノーナフタレン、2
.6−ジアミノーナフタレン、2.4−ビス(β−アミ
ノー[一ブチル)トルエン、2,4−ジアミノートルエ
ン、m−キシレン−2.5−ジアミン、p−キシレン−
2.5−ジアミン、m−キシリレンージアミン、p−キ
シリレンージアミン、2.6−ジアミノーピリジン、2
.5−ジアミノービリジン、2.5−ジアミノ−1.3
.4−オキサジアゾール、1.4−ジアミノーシク口ヘ
キサン、ビペラジン、メチレンージアミン、エチレンー
ジアミン、プロピレンージアミン、2.2−ジメチルー
プロピレンージアミン、テトラメチレンージアミン、ペ
ンタメチレンージアミン、ヘキサメチレンージアミン、
2,5−ジメチルーへキサメチレンージアミン、3−メ
トキシーへキサメチレンージアミン、ヘプタメチレンー
ジアミン、2,5−ジメチルーへブタメチレンージアミ
ン、3−メチルーへブタメチレンージアミン、4,4−
ジメチルーへブタメチレンージアミン、オクタメチレン
ージアミン、ノナメチレンージアミン、5−メチルーノ
ナメチレンージアミン、2.5−ジメチルーノナメチレ
ンージアミン、デカメチレンージアミン、■,10−ジ
アミノ−1.10−ジメチルーデカン、2,1l−ジア
ミノードデカン、1.12−ジアミノーオクタデカン、
2.12−ジアミノーオクタデカン、2,17−ジアミ
ノーアイコサン、ジアミノシロキサン、2.6−ジアミ
ノー4−カルボキシリックベンゼン、3.3′−ジアミ
ノ−4.4′−ジカルボキシリックベンジジンなどがあ
げられるが、これらに限定されるものではない。As the amine having an aromatic cyclic group for R2, diamine with m = 0, diaminocarboxylic acid with m = 1, diaminodicarboxylic acid with m = 2, etc. are used, and the amine component may be one type or a mixture of two or more types. But it doesn't matter. The types of amines used include, for example, m-phenylene diamine, l-isopropyl-2,4-phenylene diamine,
p-phenylenediamine, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylpropane, 4,4'-diaminodiphenylethane, 3,3
'-Diaminodiphenyl ethane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide,
3.3'-diaminodiphenylsulfide, 4,4'
-Diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, benzidine, 3,3'-diaminodiphenyl, 3,
3'-dimethyl-4,4'-diaminobiphenyl, 3
.. 3′-dimethoxybenzidine, 4.4″-diamino-p-terphenyl, 3.3″-diamino-p-terphenyl, bis(p-amino-hexyl)methane,
Bis(p-β-amino-t-butylphenyl)ether, bis(p-β-methyl-δ~aminopentyl)benzene, ρ-bis(2-methyl-4-aminopentyl)benzene, p-bis(1 .1-dimethyl-5-aminobenthyl)benzene, 1,5-diaminonaphthalene, 2
.. 6-diaminonaphthalene, 2,4-bis(β-amino[monobutyl)toluene, 2,4-diaminotoluene, m-xylene-2,5-diamine, p-xylene-
2.5-diamine, m-xylylene-diamine, p-xylylene-diamine, 2.6-diaminopyridine, 2
.. 5-diaminoviridine, 2.5-diamino-1.3
.. 4-Oxadiazole, 1,4-diaminorhexane, biperazine, methylenediamine, ethylenediamine, propylenediamine, 2,2-dimethylpropylenediamine, tetramethylenediamine, pentamethylenediamine, hexamethylene -diamine,
2,5-dimethyl-hexamethylene-diamine, 3-methoxyhexamethylene-diamine, heptamethylene-diamine, 2,5-dimethyl-hexamethylene-diamine, 3-methyl-hexamethylene-diamine, 4,4-
Dimethyl-hebutamethylene-diamine, octamethylene-diamine, nonamethylene-diamine, 5-methylnonamethylene-diamine, 2,5-dimethylnonamethylene-diamine, decamethylene-diamine, 1,10-diamino-1. 10-dimethyl-decane, 2,1l-diaminodecane, 1,12-diaminooctadecane,
Examples include 2.12-diamino-octadecane, 2,17-diamino-icosane, diaminosiloxane, 2.6-diamino-4-carboxylic benzene, 3.3'-diamino-4,4'-dicarboxylic benzidine, etc. However, it is not limited to these.
本発明において用いる一般式( III )で示される
ジアクリルアミド化合物(B)
(III)
(式中R3 : −H , −C H3R4,R5:
−H .−CH3.−CH20H )を感光剤として配
合した感光性樹脂は、吸水性が小さいため、バターニン
グ工程で、基板に塗布し乾燥した後長期に放置しても、
あるいは露光したまま長期に放置した後現像しパターン
化しても、塗布皮膜にクラックが発生するということは
ない。Diacrylamide compound (B) (III) represented by the general formula (III) used in the present invention (wherein R3: -H, -C H3R4, R5:
-H. -CH3. -CH20H) as a photosensitizer has low water absorption, so even if it is applied to a substrate in the buttering process and left for a long time after drying, it will not absorb water easily.
Alternatively, even if the coated film is left exposed for a long period of time and then developed to form a pattern, no cracks will occur in the coated film.
また、ジアクリルアミド化合物の使用量は、ポリアミッ
ク酸成分100重量部に対して20〜200重量部が好
ましい。20重量部未満では感度が不充分であり、20
0重量部をこえると析出がおこり良好な皮膜が得られな
い。Further, the amount of the diacrylamide compound used is preferably 20 to 200 parts by weight per 100 parts by weight of the polyamic acid component. If it is less than 20 parts by weight, the sensitivity is insufficient;
If it exceeds 0 parts by weight, precipitation will occur and a good film will not be obtained.
本発明において用いられる増感剤としてはペンゾフェノ
ン、アセトフェノン、アントロン、p,p’−テトラメ
チルジアミノベンゾフェノン(ミヒラーケトン)、フェ
ナントレン、2−ニトロフルオレン、5−ニトロアセナ
フテン、ペンゾキノン、N−アセチルーp−ニトロアニ
リン、p−ニトロアニリン、2−エチルアントラキノン
、2−ターシャリーブチルアントラキノン、N−アセチ
ルー4−ニトロ−1−ナフチルアミン、ピクラミド、1
.2−ペンズアンスラキノン、3−メチル−1.3−ジ
アザー1.9−ペンズアンスロン、p,p′−テトラ、
エチルジアミノベンゾフエノン、2−クロロ−4−ニト
ロアニリン、ジベンザルアセトン、l,2−ナフトキノ
ン、2,5−ビス−(4′−ジエチルアミノベンザル)
一シクロペンタン、2.6−ビスー(4′−ジエチルア
ミノベンザル)一シクロヘキサノン、2.6−ビスー(
4′−ジメチルアミノベンザル)−4−メチルーシクロ
ヘキサノン、2.6−ビスー(4′−ジエチルアミノベ
ンザル)−4−メチルーシクロヘキサノン、4,4′−
ビスー(ジメチルアミノ)一カルコン、4.4′−ビス
ー(ジェチルアミノ)一カルコン、p−ジメチルアミノ
ベンジリデンインダノン、1.3−ビス−(4゛−ジメ
チルアミノベンザル)一アセトン、1.3−ビス−(4
′−ジエチルアミノベンザル)一アセトン、N−フェニ
ルージエタノールアミン、N−p−トリルージエチルア
ミンやスチリル化合物、クマリン化合物などがあるが、
これらに限定されるものでなく、単独または併用して使
用することができる。Sensitizers used in the present invention include penzophenone, acetophenone, anthrone, p,p'-tetramethyldiaminobenzophenone (Michler's ketone), phenanthrene, 2-nitrofluorene, 5-nitroacenaphthene, penzoquinone, N-acetyl-p-nitro Aniline, p-nitroaniline, 2-ethylanthraquinone, 2-tert-butylanthraquinone, N-acetyl-4-nitro-1-naphthylamine, picramide, 1
.. 2-penzanthraquinone, 3-methyl-1,3-diaza 1,9-penzanthrone, p,p'-tetra,
Ethyldiaminobenzophenone, 2-chloro-4-nitroaniline, dibenzalacetone, l,2-naphthoquinone, 2,5-bis-(4'-diethylaminobenzal)
monocyclopentane, 2,6-bis(4'-diethylaminobenzal)-cyclohexanone, 2,6-bis(4'-diethylaminobenzal)
4'-dimethylaminobenzal)-4-methyl-cyclohexanone, 2,6-bis(4'-diethylaminobenzal)-4-methyl-cyclohexanone, 4,4'-
Bis(dimethylamino)monochalcone, 4.4'-Bis(jethylamino)monochalcone, p-dimethylaminobenzylideneindanone, 1.3-bis(4'-dimethylaminobenzal)monacetone, 1.3- Bis-(4
'-diethylaminobenzal) monoacetone, N-phenyludiethanolamine, N-p-tolyludiethylamine, styryl compounds, coumarin compounds, etc.
They are not limited to these, and can be used alone or in combination.
本発明において用いられる開始剤としては2,2一ジメ
トキシー2−フェニルーアセトフェノン、1−ヒドロキ
シーシク口へキシルーフェニルケトン、2−メチル−1
4−(メチルチオ)フェニル]−2一モルフォリノ−1
−プロパン、3.3’ ,4.4’−テトラー(t−プ
チルバーオキシカルボニル)ペンゾフェノン、ベンジル
、ペンゾインーイソグロピルエーテル、ペンゾインーイ
ソプチルエーテル、4.4′−ジメトキシベンジル、1
.4−ジベンゾイルベンゼン、4−ペンゾイルビフェニ
ル、2−ペンゾイルナフタレン、メチル一〇−ペンゾイ
ルベンゾエート、2.2′−ビス(O−クロロフェニル
)−4,4’ ,5.5’−テトラフェニル−1,2′
−ビイミダゾール、10−プチルー2−クロロアクリド
ン、エチル−4−ジメチルアミノベンゾエート、ジベン
ゾイルメタン、2.4−ジエチルチオキサントン、3,
3−ジメチル−4−メトキシーペンゾフェノン、2−ヒ
ドロキシ−2−メチル−1−フェニルプロパンーl−オ
ン、l−(4−イソプロビルフェニル)−2−ヒドロキ
シ−2−メチルプロパン−1−オン、l−(4−ドデシ
ルフェニル)−2−ヒドロキシー2−メチルプロパン−
1−オン、■−フェニルー1.2−ブタンジオンー2−
(0−メトキシカルボニル)オキシム、l−フェニルー
プロパンブタンジオンー2−(O−ベンゾイル)オキシ
ム、1.2−ジフェニルーエタンジオンー1−(O−ベ
ンゾイル)オキシム、1.3−ジフエニループロパント
リオン−2−(O−ベンゾイル)オキシム、l−フェニ
ル−3−エトキシープロパントリオン−2−(0−ベゾ
イル)オキシムやグリシン化合物、オキサゾロン化合物
などがあるが、これらに限定されるものではなく、単独
または併用して使用することができる。Initiators used in the present invention include 2,2-dimethoxy-2-phenyl-acetophenone, 1-hydroxy-hexyl-phenyl ketone, 2-methyl-1
4-(methylthio)phenyl]-2-morpholino-1
-Propane, 3.3', 4.4'-tetra(t-butylbaroxycarbonyl)penzophenone, benzyl, penzoin-isoglopylether, penzoin-isobutyl ether, 4.4'-dimethoxybenzyl, 1
.. 4-dibenzoylbenzene, 4-penzoylbiphenyl, 2-penzoylnaphthalene, methyl 10-penzoylbenzoate, 2.2'-bis(O-chlorophenyl)-4,4',5.5'-tetraphenyl-1, 2'
-biimidazole, 10-butyl-2-chloroacridone, ethyl-4-dimethylaminobenzoate, dibenzoylmethane, 2,4-diethylthioxanthone, 3,
3-dimethyl-4-methoxypenzophenone, 2-hydroxy-2-methyl-1-phenylpropan-l-one, l-(4-isopropylphenyl)-2-hydroxy-2-methylpropan-1- on, l-(4-dodecylphenyl)-2-hydroxy-2-methylpropane-
1-one, ■-phenyl-1,2-butanedione-2-
(0-methoxycarbonyl)oxime, 1-phenyl-propanebutanedione-2-(O-benzoyl)oxime, 1,2-diphenyl-ethanedione-1-(O-benzoyl)oxime, 1,3-diphenyl- Examples include, but are not limited to, propanetrione-2-(O-benzoyl)oxime, l-phenyl-3-ethoxypropanetrione-2-(0-bezoyl)oxime, glycine compounds, and oxazolone compounds. , can be used alone or in combination.
本発明による耐熱性、感光性樹脂組成物には、接希助剤
やレベリング剤その他各種充填剤を添加してもよい。本
発明による感光性樹脂組成物は、IP導体用途のみなら
ず、多層回路の層間絶縁膜やフレキシブル銅張板のカバ
ーコート、ソルダーレジス1・膜や液晶配向膜などとし
ても有用である。The heat-resistant, photosensitive resin composition according to the present invention may contain a diluent, a leveling agent, and various other fillers. The photosensitive resin composition according to the present invention is useful not only for use as an IP conductor but also as an interlayer insulating film of a multilayer circuit, a cover coat of a flexible copper clad board, a solder resist 1 film, a liquid crystal alignment film, and the like.
以下実施例により本発明を具体的に説明する。The present invention will be specifically explained below using Examples.
実施例1
3.3’ ,4.4’−ベンゾフェノンテトラカルボン
酸二無水物57gと、アミンとして4.4′−ジアミノ
ジフェニルエーテル33gと下記式で示されるシリコー
ンジアミン10gとの混合物をN−メチルビロリドンに
投入し
20゜Cで6時間反応させた。Example 1 A mixture of 57 g of 3.3',4.4'-benzophenone tetracarboxylic dianhydride, 33 g of 4.4'-diaminodiphenyl ether as an amine, and 10 g of silicone diamine represented by the following formula was dissolved in N-methylpyrrolidone. The mixture was added and reacted at 20°C for 6 hours.
得られたポリアミック酸に、下式のジアクリルアミド化
合物100g
と2−(p−ジメチルアミノスチリル)ペンゾオキサゾ
ール4gとN−フェニルグリシン8gを添加し、室温で
混合溶解した。To the obtained polyamic acid were added 100 g of a diacrylamide compound of the following formula, 4 g of 2-(p-dimethylaminostyryl)penzoxazole, and 8 g of N-phenylglycine, and the mixture was mixed and dissolved at room temperature.
得られた溶液をアルミ板上にスピンナーで塗布し、乾燥
機により65℃で1時間乾燥した。The obtained solution was applied onto an aluminum plate using a spinner and dried at 65° C. for 1 hour using a drier.
このフイルムにコダック社製フォトグラフイツクステッ
プタブレットNo2. 21ステップ(本グレースケー
ルでは、段数が一段増加するごとに透過光量が前段の1
/f2に減少するので現像後の残存段階が大きいものほ
ど感度が良い)を重ね、500mj/cm2の紫外線を
照射した。2日間休日で放置後、N−メチルビロリドン
60重量%、メタノール40重量%の現像液を用い現像
、さらにイソプロビルアルコールでリンスをしたところ
13段までパターンが残存し、クラックもなく、高感度
であることが判った。Kodak Photographic Step Tablet No. 2 was attached to this film. 21 steps (In this gray scale, each time the number of steps increases, the amount of transmitted light increases by one step from the previous step.)
/f2, so the larger the residual stage after development, the better the sensitivity). After leaving it for 2 days on holiday, it was developed using a developer containing 60% N-methylpyrrolidone and 40% methanol, and then rinsed with isopropyl alcohol. The pattern remained up to 13 steps, with no cracks and high sensitivity. It turned out that.
次に、前述と同様な方法でシリコンウェハー上に塗布し
全面露光し、現像、+7ンスの各工程を行い、さらに1
50、250、350゜Cで各々30分間加熱硬化した
。Next, the coating was applied onto a silicon wafer in the same manner as described above, the entire surface was exposed, development and +7 ounce steps were performed, and then 1
Heat curing was performed at 50, 250, and 350°C for 30 minutes each.
密着力試験のため1mm角に100個カットし、セロテ
ープで引き剥がそうとしたが、1個も剥がれず、高密着
性であることが判った。For the adhesion test, 100 pieces were cut into 1 mm square pieces and an attempt was made to peel them off using cellophane tape, but none of them came off, indicating that they had high adhesion.
また、別途アルミ板上に塗布し、全面露光、現像、リン
ス、熱硬化したあとアルミ板をエッチングで除去し、フ
イルムを得た。Separately, it was coated on an aluminum plate, exposed to light over the entire surface, developed, rinsed, and cured with heat, and then the aluminum plate was removed by etching to obtain a film.
得られたフイルムの引張弾性率(JIS K−6760
)は140Kg/mm2と小さく(小さい方が良い)、
熱分解開始温度は430゜Cと高かった(高い方が良い
)。Tensile modulus of the obtained film (JIS K-6760
) is small at 140Kg/mm2 (the smaller the better),
The thermal decomposition onset temperature was as high as 430°C (the higher the better).
比較例1〜6
実施例1にの方法に従い、シリコーン系ジアミンのシロ
キサン結合数と添加量、感光剤であるジアクリルアミド
化合物の添加量をそれぞれかえ、同様の実験を行ない、
第1表の結果を得た。Comparative Examples 1 to 6 Similar experiments were conducted according to the method of Example 1, changing the number of siloxane bonds and the amount added of the silicone diamine, and the amount of diacrylamide compound as a photosensitizer, respectively.
The results shown in Table 1 were obtained.
比較例1では、ジメタクリルアミド化合物の添加量を1
0重量部に減らしたところ、感度が低く、クラックも発
生した。In Comparative Example 1, the amount of dimethacrylamide compound added was 1
When the amount was reduced to 0 parts by weight, sensitivity was low and cracks also occurred.
比較例2では、ジメタクリルアミド化合物の橋加量を2
10重量部に増やしたところ、きれいなフィルムが得ら
れなかった。In Comparative Example 2, the crosslinking amount of the dimethacrylamide compound was 2.
When the amount was increased to 10 parts by weight, a clean film could not be obtained.
比較例3では、シリコーン系ジアミンの添加量を0.2
重量%に減らしたところ、弾性率を低下させることがで
きなかった。In Comparative Example 3, the amount of silicone diamine added was 0.2
When it was reduced to % by weight, the elastic modulus could not be lowered.
比較例4では、シリコーン系ジアミンの添加量を30重
量%に増やしたところ、フイルムが脆く、密着性もよく
なかった。In Comparative Example 4, when the amount of silicone diamine added was increased to 30% by weight, the film was brittle and the adhesion was poor.
比較例5では、シリコーン系ジアミンのシロキサン結合
数をn=0にしたところ、柔軟性に欠け、フィルム化時
点でクラックが発生しバラバラになった。In Comparative Example 5, when the number of siloxane bonds in the silicone diamine was set to n=0, the film lacked flexibility and cracked and fell apart when it was formed into a film.
比較例6では、シリコーン系ジアミンのシロキサン結合
数をn = 100にしたところ、反応率が低く未反応
シリコーンがフィルム表面にブリードし剥がれてしまっ
た。In Comparative Example 6, when the number of siloxane bonds in the silicone diamine was set to n = 100, the reaction rate was low and unreacted silicone bled onto the film surface and peeled off.
[発明の効果]
ポリイミド樹脂の吸水性、吸湿性が大きいことは、ある
意味で宿命的欠点である。このため、従来の感光性化技
術では露光後の放置により吸湿し、現像時にクラックが
発生するという保存安定性の悪さを解決できなかった。[Effects of the Invention] In a certain sense, the high water absorption and hygroscopicity of polyimide resins is a fatal drawback. For this reason, with conventional photosensitization techniques, it has not been possible to solve the problem of poor storage stability, in which moisture is absorbed when left after exposure and cracks occur during development.
しかるに、本発明では、特殊な感光剤により、感度の向
上があっただけでなく、クラックのない良好なパターン
が得られるようになった。However, in the present invention, by using a special photosensitive agent, not only the sensitivity was improved, but also a good pattern without cracks could be obtained.
さらには、ポリイミド樹脂としての耐熱性の優秀さ、ま
たシリコーン変性による低弾性率で高密着であるという
非常に優れた効果も同時に得られた。Furthermore, it also had excellent heat resistance as a polyimide resin, as well as low elastic modulus and high adhesion due to silicone modification.
Claims (1)
れるポリアミック酸(A) ▲数式、化学式、表等があります▼・・・・〔II〕 (式中R_1、R_2:芳香族環状基 n:1〜2、m:0〜2) に、下記式〔III〕で示されるジアクリルアミド化合物
(B) ▲数式、化学式、表等があります▼・・・・〔III〕 (式中R_3:−H、−CH_3 R_4、R_5:−H、−CH_3、−CH_2OH)
を必須成分とし、(A)100重量部に対して(B)2
0〜200重量部及び必要に応じて増感剤及び/または
開始剤を配してなる感光性樹脂組成物。(1) Copolymerization of 0.5 to 25% by weight of silicone diamine represented by the following formula [I] ▲ Numerical formulas, chemical formulas, tables, etc. are available▼・・・[I] (n: 1 to 50 in the formula) Polyamic acid (A) represented by the following formula [II] ▲ Numerical formulas, chemical formulas, tables, etc. are available ▼... [II] (In the formula, R_1, R_2: aromatic cyclic group n: 1 to 2, m : 0 to 2), there are diacrylamide compounds (B) represented by the following formula [III] ▼ Numerical formulas, chemical formulas, tables, etc. ▼... [III] (In the formula, R_3: -H, -CH_3 R_4, R_5: -H, -CH_3, -CH_2OH)
is an essential component, and (B) 2 for 100 parts by weight of (A)
A photosensitive resin composition containing 0 to 200 parts by weight and, if necessary, a sensitizer and/or an initiator.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011944A JPH03216657A (en) | 1990-01-23 | 1990-01-23 | Photosensitive resin composition |
| DE69030643T DE69030643T2 (en) | 1989-11-30 | 1990-11-28 | Photosensitive resin composition and its use in the manufacture of a semiconductor apparatus |
| EP90122780A EP0430220B1 (en) | 1989-11-30 | 1990-11-28 | Photosensitive resin composition and semiconductor apparatus using it |
| KR1019900019635A KR0147307B1 (en) | 1989-11-30 | 1990-11-30 | Photosensitive resin composition and semiconductor device using the same |
| US08/140,893 US5385808A (en) | 1989-11-30 | 1993-10-25 | Photosensitive resin composition and semiconductor apparatus using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011944A JPH03216657A (en) | 1990-01-23 | 1990-01-23 | Photosensitive resin composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03216657A true JPH03216657A (en) | 1991-09-24 |
Family
ID=11791760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011944A Pending JPH03216657A (en) | 1989-11-30 | 1990-01-23 | Photosensitive resin composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03216657A (en) |
-
1990
- 1990-01-23 JP JP2011944A patent/JPH03216657A/en active Pending
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