JPH03217823A - Method for forming liquid crystal alignment film - Google Patents
Method for forming liquid crystal alignment filmInfo
- Publication number
- JPH03217823A JPH03217823A JP1410990A JP1410990A JPH03217823A JP H03217823 A JPH03217823 A JP H03217823A JP 1410990 A JP1410990 A JP 1410990A JP 1410990 A JP1410990 A JP 1410990A JP H03217823 A JPH03217823 A JP H03217823A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- ions
- atoms
- glow discharge
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims description 15
- 229920001721 polyimide Polymers 0.000 claims abstract description 14
- 230000007935 neutral effect Effects 0.000 claims abstract description 8
- 150000002500 ions Chemical class 0.000 abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 17
- 239000007789 gas Substances 0.000 abstract description 11
- 229910052681 coesite Inorganic materials 0.000 abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 abstract description 9
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 238000000605 extraction Methods 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000003570 air Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は液晶表示素子の電極基根上に積層される液晶配
向膿の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for forming a liquid crystal alignment layer laminated on an electrode base of a liquid crystal display element.
Ｃ従来の技術１
従来、この種液晶配向膜の形成方法として、Ｓ１０２、
ポリイミド膿等の表面をラビング処理する方法が知られ
ている．
また、グロー敢電に晒す、イオンビームを叩射する方法
等もある。C. Conventional technology 1 Conventionally, as a method for forming this kind of liquid crystal alignment film, S102,
A method of rubbing the surface of polyimide pus is known. There are also methods such as exposing it to glow electricity or bombarding it with an ion beam.
Ｃ発明が解決しようとする課Ｕ］
しかしながら、上記ラビング処理を用いた液晶配向膜の
形成方法では、Ｓ ｉ ０ ２ポリイミド膜が剥れたり
、また膜表面やこれを擦る布にダストが付着している場
合には、液晶配向膜自体を傷付けるという不都合を有す
る。Problems to be solved by the invention U] However, in the method for forming a liquid crystal alignment film using the above-mentioned rubbing treatment, the Si 0 2 polyimide film may peel off, and dust may adhere to the film surface or the cloth that rubs it. In this case, there is a problem that the liquid crystal alignment film itself may be damaged.
一方、グロー放電、イ才ンビームを用いる方法では上記
不都合はないが、電子、イオンによる電気的ダメージが
ある６たとえば、液晶配向膜の形成以前に基板上に作製
されたデバイスの特性シフト、あるいは液晶注入後のＣ
−■カーブのヒステリシス横の増大という形で表われる
液晶配向膜の劣化である。On the other hand, methods using glow discharge and ink beams do not have the above-mentioned disadvantages, but there is electrical damage caused by electrons and ions. C after injection
-■ This is a deterioration of the liquid crystal alignment film that appears in the form of an increase in the horizontal hysteresis of the curve.
本発明は、このような問題を解決するものでその目的と
するところは、Ｓ ｉ Ｏｘポリイミド膜が剥れたりす
ることなく、ダストフリーでかつ電気的なダメージのな
い液晶配向膿の形成方法を提供するところにある。The present invention is intended to solve these problems, and its purpose is to provide a method for forming liquid crystal aligned pus without peeling off the SiOx polyimide film, dust-free, and without electrical damage. It's there to provide.
［課題を解決するための手段］
本発明の液晶配向膜の形成方法は、ＳｉＯ２、？リイミ
ド膜の表面を電気的に中性なラジカル及び原子に晒すこ
とから成ることを特徴とする。[Means for Solving the Problems] The method for forming a liquid crystal alignment film of the present invention includes SiO2, ? It is characterized by exposing the surface of the limide film to electrically neutral radicals and atoms.
グロー放電により生成したイオン、電子の中からイオン
のみを引き出し電極より取り出し、加速する。そのイオ
ンをニュートライズすることにより、電気的には中性な
ラジカル、原子のシャワーとし、これをＳｉＯ■、ポリ
イミド膜表面に照射する。Among the ions and electrons generated by glow discharge, only ions are extracted from the electrode and accelerated. By neutralizing the ions, they are turned into a shower of electrically neutral radicals and atoms, which are irradiated onto the surface of the SiO2 and polyimide films.
（実 施 例１ 以下図面に従って本発明の実施例を説明する。(Implementation example 1 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明方法を実施するための装置の一例を示す
もので，真空チャンバ１内にグロー放電ｌＯ発生室２を
設け、真空ポンブ３て真空排気できるようにしてある６
真空排気後、ガス導入口７よリアルゴンあるいは、窒素
、酸素、水素、ヘリウム、空気等の所望のガスを導入し
所定の圧力とする。圧力コントロールはマスフローコン
トローラを用いたが、真空ポンプ３側で排気スピードを
コントロールしてもよい。次に、マイクロ波９バワを印
加し、電５ｎ石８による磁界との共鳴を用い？いわゆる
ＥＣＲ放電を発生させる。このグロ放電１０の発生の方
法も、ＥＣＲ放電に限らず、ＤＣ放電、ＲＦ放電でも可
能である。グロー放電ＩＯによりイオンと電子を生成し
、イオン引き出し電極４に直流のマイナス電位を印加す
ることにより、前記グロー放電１０中からイオンを引き
出す。そのイオンをニュートライザ５で電気的な中性す
なわちラジカル及び原子とし、ＳｉＯ■、ポリイミド膜
をあらかじめ形成してある基板６にシャワーで照射する
。FIG. 1 shows an example of an apparatus for carrying out the method of the present invention, in which a glow discharge IO generation chamber 2 is provided in a vacuum chamber 1 and can be evacuated by a vacuum pump 3 6.
After evacuation, a desired gas such as real gas, nitrogen, oxygen, hydrogen, helium, air, etc., is introduced through the gas inlet 7 to achieve a predetermined pressure. Although a mass flow controller was used for pressure control, the exhaust speed may also be controlled on the vacuum pump 3 side. Next, microwave 9 power is applied, and resonance with the magnetic field by electric stone 8 is used. A so-called ECR discharge is generated. The method for generating the glow discharge 10 is not limited to ECR discharge, but may also be DC discharge or RF discharge. Ions and electrons are generated by the glow discharge IO, and ions are extracted from the glow discharge 10 by applying a negative DC potential to the ion extraction electrode 4. The ions are made electrically neutral, that is, radicals and atoms, by a neutralizer 5, and are irradiated with a shower onto a substrate 6 on which a SiO2 and polyimide film has been formed in advance.
製造、形成条件は幅広いが一例を示すと、処理ガス圧は
当然放電可能領域である訳だが、ガス圧が高い程、イオ
ン引き出し電極４により引き出されるイオンは多くなり
処理時間が短くなる。反面、イオン量が増すとニュート
ライズしにくいという問題が生じる。また、イオン引き
出し電極４のマイナス電位を大きくしても処理時間が短
くなる。しかし、これも上記同様にニュートライズしに
くいという問題ばかりか、ＳｉＯ２．ポリイミド膜表面
へ物理的な衝撃によるダメージが発生す？。このダメー
ジはラビング処理時に強く擦った場合とよく似ている。Manufacturing and forming conditions are wide-ranging, but to give one example, the processing gas pressure is naturally in the dischargeable range, but the higher the gas pressure, the more ions are extracted by the ion extraction electrode 4, and the processing time becomes shorter. On the other hand, as the amount of ions increases, a problem arises in that it is difficult to neutralize. Further, even if the negative potential of the ion extraction electrode 4 is increased, the processing time is shortened. However, this also has the same problem of being difficult to neutralize, as well as SiO2. Will physical impact cause damage to the polyimide film surface? . This damage is similar to that caused by strong rubbing during the rubbing process.
結局、イオン引き出し電極４に印加するマイナス電位は
、ラビング処理時のＳｉＯ。、ポリイミド膜への加圧に
匹敵し、従ってこのイオン引き出し電位により、液晶配
向力を調整できるのである。また基板６のラジカル、原
子シャワーに対する角度は、１０゜〜４５゜位が最も効
率的であった。After all, the negative potential applied to the ion extraction electrode 4 is SiO during the rubbing process. This is comparable to applying pressure to a polyimide film, and therefore, the liquid crystal alignment force can be adjusted by this ion extraction potential. The most efficient angle of the substrate 6 with respect to the radical and atomic shower was approximately 10° to 45°.
本実施例ではガス種にもよるが、アルゴンを使用した場
合、ＩＰａの圧力で配向材にポリイミドを使用するとイ
オン引き出し電位は−１０Ｖから配向を始め、ＳｉＯ■
を使用すると−３０Ｖから配向を始めた。また、両配向
材共−２００ｖ〜一５００■位からダメージを生・し、
液晶注入後のＣ一■特性のみならず画質の劣化がみられ
た。これらの定量的な値は、放電の発生方法、ガス圧、
ガス種、あるいは、ラジカル、原子シャワーに対する基
板６の角度等によって当然変わるものである。In this example, although it depends on the gas type, when argon is used and polyimide is used as the alignment material at a pressure of IPa, the ion extraction potential starts alignment from -10V, and SiO
When using , orientation started from -30V. In addition, both alignment materials cause damage from -200V to -1500V,
After the liquid crystal was injected, not only the C-characteristics but also the image quality deteriorated. These quantitative values depend on how the discharge occurs, the gas pressure,
Naturally, it changes depending on the type of gas or the angle of the substrate 6 with respect to the radical or atomic shower.
また、本記述では、ラジカル、原子としてある？，分子
であっても電気的に中性であれば、本発明の意としてい
るところの範ちゅうに入る。Also, in this description, are radicals and atoms? , molecules, as long as they are electrically neutral, fall within the scope of the present invention.
［発明の効果］
このように、本発明によれば、Ｓｉ０２．ポリイミド膜
の表面を電気的に中性なラジカル及び原子のシャワーに
晒すことから、上記ＳｉＯ■、ポノイミド膜表面に傷が
なく、クリーンでしかも、電気的ダメージのない液晶配
向膜を簡単に形成することができるという効果を有する
。[Effects of the Invention] As described above, according to the present invention, Si02. By exposing the surface of the polyimide film to a shower of electrically neutral radicals and atoms, it is possible to easily form a liquid crystal alignment film that is clean, free from electrical damage, and has no scratches on the surface of the SiO or polyimide film. It has the effect of being able to
第１図は、本発明における液晶配向膜の形成方法を実施
するための装置の一例を示す図。
・真空チャンバ
・グロー放電発生室
真空ポンプ
イオン引き出し電極
・ニュートライザ
・基板
７
・ガス導入口
８
・ｉｔｍ石
９
・マイクロ波
１
０
グロー放電
以
上FIG. 1 is a diagram showing an example of an apparatus for carrying out the method for forming a liquid crystal alignment film according to the present invention.・Vacuum chamber ・Glow discharge generation chamber Vacuum pump Ion extraction electrode ・Neutrizer ・Substrate 7 ・Gas inlet 8 ・ITM stone 9 ・Microwave 1 0 More than glow discharge
Claims (1)
カル及び原子のシャワーに晒すことから成る液晶配向膜
の形成方法。A method for forming a liquid crystal alignment film comprising exposing the surface of a SiO_2, polyimide film to a shower of electrically neutral radicals and atoms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1410990A JPH03217823A (en) | 1990-01-24 | 1990-01-24 | Method for forming liquid crystal alignment film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1410990A JPH03217823A (en) | 1990-01-24 | 1990-01-24 | Method for forming liquid crystal alignment film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03217823A true JPH03217823A (en) | 1991-09-25 |
Family
ID=11851952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1410990A Pending JPH03217823A (en) | 1990-01-24 | 1990-01-24 | Method for forming liquid crystal alignment film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03217823A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0806699A3 (en) * | 1996-05-10 | 1998-06-10 | International Business Machines Corporation | Particle beam alignment of liquid crystals |
| JP2007047252A (en) * | 2005-08-08 | 2007-02-22 | Seiko Epson Corp | Liquid crystal device, method for manufacturing liquid crystal device, and projection display device |
-
1990
- 1990-01-24 JP JP1410990A patent/JPH03217823A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0806699A3 (en) * | 1996-05-10 | 1998-06-10 | International Business Machines Corporation | Particle beam alignment of liquid crystals |
| US5770826A (en) * | 1996-05-10 | 1998-06-23 | International Business Machines Corporation | Atomic beam alignment of liquid crystals |
| CN1107696C (en) * | 1996-05-10 | 2003-05-07 | 国际商业机器公司 | Liquid crystal atomic beam arrangement method |
| JP2007047252A (en) * | 2005-08-08 | 2007-02-22 | Seiko Epson Corp | Liquid crystal device, method for manufacturing liquid crystal device, and projection display device |
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