JPH03225820A - Improvement of film quality - Google Patents

Abstract

PURPOSE:To smooth a film surface and further to contrive to improve the bond strength of the film and cleaning of the film surface through removal of an organic contaminant film by applying voltage to a cathode and anode arranged in a vacuum tank having rare gas so that ions generated in the discharge space of a generated glow discharge collide with the film of a substrate facing the anode. CONSTITUTION:Ar gas (rare gas) is caused beforehand to flow into (fill up) a vacuum tank 12 and voltage is applied to a cathode 14 and anode 16 so that the discharge space of a glow discharge is formed and accelerated ion (Ar+) groups 20 going from the anode 16 to the cathode 14 are generated. In this case, the accelerated ion (Ar+) groups 20 collide with the film 18a of a substrate 18 and components of the film 18a are driven into by the accelerated ion (Ar+) groups 20 colliding therewith. Thus, the surface of the film 18a is smoothed and further the bond of the film is strengthened so that it is possible to contrive to improve the quality of the film exellent in cleaning of the film surface.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for improving the film quality of a thin film suitable for forming a predetermined thin film on a Si wafer or the like.

- Layer details include accelerated ions colliding with the formed thin film,
By causing the thin film-forming molecules to be hammered in by this impact effect, the thin film surface becomes smoother.
Furthermore, the adhesion (adhesion) strength of the thin film and the cleanliness of the thin film surface are improved by removing organic contaminants.

[Conventional technology]

Conventionally, the ion bombard method, which is known as ion irradiation using glow discharge, is S
It is often used only for cleaning just before a thin film is formed on an i-wafer or the like.

Figure 2 shows a cleaning device using ion irradiation.

Reference numeral 2 is a vacuum chamber, 4 is a cathode, 6 is an anode, and 8 is a Si
A substrate such as a wafer.

Ar gas (rare gas) is introduced into the vacuum chamber 2, and a voltage is applied between the cathode 4 and the anode 6.

This forms a discharge space for glow discharge, and the accelerated ion (Ar+) group 9 collides with the substrate 8.

In this way, the substrate 8 is cleaned.

[Problem to be solved by the invention]

However, the conventional ion irradiation described above is used for cleaning Si wafers, etc., and there are currently no examples of it being used for smoothing the surface of a thin film or strengthening the adhesion of a thin film.

The present invention was made in view of the above-mentioned problems, and by colliding accelerated ions into a single film, the thin film-forming molecules are driven into the film, thereby smoothing the thin film surface, strengthening the adhesion of the thin film, and cleaning the thin film surface. The purpose of this invention is to provide an excellent method for improving M'l of thin films.

[Means for Solving the Problems] In order to solve the above problems, in the method for improving the film quality of a thin film of the present invention, a voltage is applied to a cathode and an anode arranged in a vacuum chamber containing a gas, The ions generated in the discharge space of the glow discharge collide with the thin film of the substrate facing the anode.

[For production]

In the above process, accelerated ions collide with the formed thin film, causing an action in which the thin film-forming molecules are driven into the film.

As a result, the surface of the thin film is smoothed, the adhesion of the thin film is further strengthened, and the organic contamination film is removed.

[Example] Next, an example of the method for improving the film quality of a thin film according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic configuration diagram of an ion irradiation device used for explaining an embodiment.

In FIG. 1, numeral 12 is a vacuum chamber, 14 is a cathode, 16 is an anode, 18 is a substrate such as a Si wafer,
The surface of this substrate 18 is cleaned as necessary in the vacuum chamber as described in the conventional example above, and then a thin film 18a (for example, a thin layer for electrodes) of several thousand layers is applied.
is provided on the base body 18b within this vacuum chamber.

Note that the reference numeral 19 is a voltage applying section for applying a predetermined voltage to the cathode 14 and the anode 16.

Gas A (rare gas) is pre-flowed (filled) into this vacuum chamber 12, and a voltage is applied to the cathode 14 and the positive 8i16.This forms a discharge space for glow discharge.
Accelerated ion (Ar+) groups 20 are generated from the anode 16 toward the cathode 14.

In this case, accelerated ion (Ar+) groups 20 collide with the thin film 18a of the base 118. Accelerated ions (Ar
-t-) group 20 produces an effect in which molecules forming the thin film 18a are hammered into the group 20.

This smoothes the surface of the thin film 18a. Furthermore, the adhesion of the thin film is strengthened. For example, in cases where the present invention was implemented, the adhesion strength was 30 to 40% compared to the conventional example.
The improvement was significant.

In addition, a relatively thick organic contamination film is removed, and the cleaning of the surface of 11 is improved.

In addition, the ion irradiation device used in the explanation of the above example! Of course, any device may be used without departing from the effects of the present invention.

〔Effect of the invention〕

As described above, according to the method for improving thin film quality of the present invention,
A voltage is applied to a cathode and an anode placed in a vacuum chamber containing a rare gas, and the ions generated in the discharge space of the glow discharge that occur collide with one membrane of the S plate facing the anode. There is.

As a result, the accelerated ions collide with the formed all, and the impact effect causes the molecules forming the thin film to be hammered in, smoothing the thin film surface and further improving the adhesion strength of the thin film and the organic contamination film. When removed, the cleaning of the thin film surface is improved.

[Brief explanation of drawings]

FIG. 1 is a schematic configuration diagram of an ion irradiation device used to explain an embodiment of the thin film quality improvement method of the present invention, and FIG. 2 is a schematic diagram of a cleaning device using ion irradiation used to explain a conventional technique. FIG. 12... Vacuum chamber, 14... Cathode, 16...
anode, 18...substrate, 18a-1 film,
18 b - Base, 20 Accelerated ion group.

Claims (1)

[Claims] A thin film characterized in that a voltage is applied to a cathode and an anode arranged in a vacuum chamber containing gas, and ions generated in the discharge space of a glow discharge that occur collide with a thin film of a substrate facing the anode. Method for improving film quality.