JPH03218683A - Photovoltaic element - Google Patents
Photovoltaic elementInfo
- Publication number
- JPH03218683A JPH03218683A JP2014011A JP1401190A JPH03218683A JP H03218683 A JPH03218683 A JP H03218683A JP 2014011 A JP2014011 A JP 2014011A JP 1401190 A JP1401190 A JP 1401190A JP H03218683 A JPH03218683 A JP H03218683A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- silicon film
- photovoltaic element
- irregularities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 21
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000007790 solid phase Substances 0.000 claims abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 29
- 239000000843 powder Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910006853 SnOz Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、多結晶シリコン（以下、ｐ−Ｓｉと称す）膜
と非品質シリコン（以下、ａ−Ｓｉと称す）膜または微
結晶シリコン（以下、μｃ−Ｓｉと称す）膜との接合を
備える光起電力素子に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial application field The present invention is applicable to polycrystalline silicon (hereinafter referred to as p-Si) films, non-quality silicon (hereinafter referred to as a-Si) films or microcrystalline silicon. (hereinafter referred to as μc-Si) A photovoltaic element having a junction with a film.
（口）従来の技術
ａ−Ｓｉ膜のみからなる光起電力素子より光電変換効率
が高くなるとして、ｐ−Ｓｉ膜とａ−Ｓｉ膜との接合を
備える光起電力素子が、Ｊａｐａｎｅｓｅ Ｊｏｕｒｎ
ａｌ ｏｆＡｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ＼’ｏｌ２
２ （１９８３） ｐｐ．Ｌ６０５に記載されているよ
うに、既に知られている。(Example) A photovoltaic element having a junction between a p-Si film and an a-Si film has been proposed in the Japanese Journal, as it has higher photoelectric conversion efficiency than a conventional photovoltaic element consisting only of an a-Si film.
al of Applied Physics＼'ol2
2 (1983) pp. Already known as described in L605.
（ハ）発明が解決しようとする課題
この光起電力素子は、ｐ−Ｓｉウエハを用いているため
、コストが高くなる。(c) Problems to be Solved by the Invention Since this photovoltaic device uses a p-Si wafer, its cost is high.
また、このような光起電力素子においても、従来十分な
光電変換効率は得られていなかった。Further, even in such a photovoltaic element, sufficient photoelectric conversion efficiency has not been obtained in the past.
そこで、本発明の目的は、ｐ−Ｓｉ膜とａ−Ｓｉ膜また
はμｃ−Ｓｉ膜との接合を備える光起電力素子を安価に
製造することができ、かつ高変換効率を備える光起電力
素子を提供するものである。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to produce a photovoltaic element having a junction between a p-Si film and an a-Si film or a μc-Si film, which can be manufactured at low cost, and which has high conversion efficiency. It provides:
（二）課題を解決するための手段
本発明は、固相成長法により形成したｐ−Ｓｉ膜と、ａ
−Ｓｉ膜またはｐｃ−Ｓｉ膜との接合を備える光起電力
素子において、上記ｐ−Ｓｉ膜の上記ａ−Ｓｉ膜または
μｃ−Ｓｉ膜との接合面に、高さ約２０００人以上の凸
凹が形成されていることを特徴とする。(2) Means for Solving the Problems The present invention provides a p-Si film formed by a solid phase growth method and a
- In a photovoltaic device having a junction with a Si film or a PC-Si film, the junction surface of the p-Si film with the a-Si film or the μc-Si film has an unevenness with a height of about 2000 or more. It is characterized by being formed.
（ホ）作用
本発明によれば、ｐ−Ｓｉ膜上に高さ約２０００人以上
の凸凹を形成することにより、その上に形成したａ−Ｓ
ｉ層にも凸凹が形成され、光起電力素子の光入射面に６
凸凹が形成されることになる。従って、入射光は入射面
にて屈折し、発電層内に斜めに入るため、発電層内での
光路長が長くなり、光の吸収量が多くなるため光電変換
効率が向上する。(E) Function According to the present invention, by forming irregularities with a height of about 2000 or more on the p-Si film, the a-S
I-layer is also formed with unevenness, and the light incidence surface of the photovoltaic element has 6
Unevenness will be formed. Therefore, the incident light is refracted at the incident surface and obliquely enters the power generation layer, so the optical path length within the power generation layer becomes longer, and the amount of light absorbed increases, so that the photoelectric conversion efficiency improves.
（へ）実施例
第１図は、本発明の一実施例の光起電力素子の構造を示
す概略的断面図である。(f) Example FIG. 1 is a schematic sectional view showing the structure of a photovoltaic device according to an example of the present invention.
この光起電力素子は、２つの単位発電素子を積層した、
所謂タンデム型光起電力素子であり、１は基板、２は基
板ｌ上に固相成長法により形成された膜厚５〜５０μｍ
のｎ型ｐ−Ｓｉ層であり、その表面に約２０００人以上
の凹凸が形成されている。３は膜厚１００ − ５００
人のｐ型ｌＩｃ−Ｓｉ層、４は膜厚１００ − ５００
人のｎ型ａ−Ｓｉ層、５は膜厚１０００ − ８０００
人のｉ型ａ一Ｓｌ層、６は膜厚１００ − ３００人の
ｐ型ａ−Ｓｉ層である。This photovoltaic element is a stack of two unit power generating elements.
It is a so-called tandem type photovoltaic device, and 1 is a substrate, and 2 is a film thickness of 5 to 50 μm formed on the substrate l by solid phase growth method.
It is an n-type p-Si layer, and its surface has a roughness of approximately 2,000 or more. 3 is film thickness 100-500
Human p-type lIc-Si layer, 4 has a film thickness of 100-500
Human n-type a-Si layer, 5 has a film thickness of 1000-8000
6 is a p-type a-Si layer with a film thickness of 100 to 300.
これらｐ型μｃ−Ｓｉ層３、ｎ型ａ−Ｓｉ層４、ｉ型ａ
−Ｓｉ層５及びｐ型ａ−Ｓｉ層６は、周知のプラズマＣ
ＶＤ法によりｎ型ｐ−Ｓｉ層２上に順に形成される。７
はＩＴＯ （酸化インジウム） 、ＳｎＯｚ （酸化錫
）等のＴＣＯ（透光性導電酸化物冫からなる膜厚１００
０〜２０００人の透明電極である。These p-type μc-Si layer 3, n-type a-Si layer 4, i-type a
-Si layer 5 and p-type a-Si layer 6 are formed using well-known plasma C
They are sequentially formed on the n-type p-Si layer 2 by the VD method. 7
is a film made of TCO (transparent conductive oxide) such as ITO (indium oxide) or SnOz (tin oxide) with a thickness of 100 mm.
0-2000 transparent electrodes.
なお、ｐ型ｐｃ−Ｓｉ層３に代えて、ｐ型ａ−Ｓｉ層３
を用いてもよい。Note that instead of the p-type PC-Si layer 3, the p-type a-Si layer 3
may also be used.
第２図は、ｎ型ｐ−Ｓｉ層２表面の凸凹の高さと光起電
力素子の変換効率との関係を示す。なお、同図は、凸凹
がない場合の変換効率を１としたときの相対値を示して
いる。FIG. 2 shows the relationship between the height of the unevenness on the surface of the n-type p-Si layer 2 and the conversion efficiency of the photovoltaic element. Note that this figure shows relative values when the conversion efficiency in the case of no unevenness is set to 1.
第２図から明らかなように、ｎ型ｐ−Ｓｉ層２の表面に
２０００人以上の凸凹を形成することにより、凸凹がな
い場合と比べ変換効率を向上し得ることが分かる。これ
はｎ型ｐ−Ｓｉ層２の表面に２０００人以上の凸凹を形
成することにより、光起電力素子の短絡電流が増加した
ためである。なお、２０００人以下で変換効率がほとん
ど変化しないのは、凸凹が小さすぎるため、その効果が
少ないためであると考えられる。As is clear from FIG. 2, it can be seen that by forming irregularities of 2000 or more on the surface of the n-type p-Si layer 2, the conversion efficiency can be improved compared to the case where there are no irregularities. This is because the short circuit current of the photovoltaic element increased due to the formation of 2000 or more irregularities on the surface of the n-type p-Si layer 2. The reason why the conversion efficiency hardly changes when the number of people is 2,000 or less is considered to be because the unevenness is too small, so the effect is small.
次に、本発明の実施例の光起電力素子のｎ型ｐ−Ｓｉ層
２の具体的な形成方法について、３つの例を示す。Next, three examples will be shown regarding specific methods for forming the n-type p-Si layer 2 of the photovoltaic device according to the embodiment of the present invention.
（第１例ラ 基板１としては、石英もしくはセラミック等を用いる。(First example la As the substrate 1, quartz, ceramic, or the like is used.
アセトン中に８１もしくはＳｉｎ，の結晶粉末（粒径２
０ ０ ０〜１００ＱＱ人）をイ容かして撹拌し、こ
の溶液中に基板１を入れ、１０〜３０分超音波洗浄する
。そうすることにより、基板１上に粉末が吸着される。81 or Sin, crystal powder (particle size 2) in acetone
0 0 0 to 100 QQ people) was stirred in a volume, and the substrate 1 was placed in this solution and ultrasonically cleaned for 10 to 30 minutes. By doing so, the powder is adsorbed onto the substrate 1.
こうして粉末が吸着した基板１上に、下記の条件による
プラズマＣＶＤ法により、リンドープのｎ型ａ−Ｓｉ層
を形成する。A phosphorus-doped n-type a-Si layer is formed on the substrate 1 on which the powder has been adsorbed in this manner by plasma CVD under the following conditions.
＊ Ｃ Ｖ Ｄ形成条件
ガス流量比： ＰＩ−１，，／’ ＳｉＨ． ＝ １〜
３％基板温度 ゜４００〜７００℃
膜厚 ：５〜５０μｍ
その後、このｎ型ａ−Ｓｉ層を、６００ 〜８００℃の
Ｎ２ガス雰囲気中にｌＯ〜３０時間曝して固相成長させ
ることにより、表面に２０００〜１００００人の凸凹を
持ったｎ型ｐ−Ｓｉ層２が形成される。*CVD formation conditions gas flow rate ratio: PI-1,,/' SiH. = 1~
3% Substrate temperature ゜400~700℃ Film thickness: 5~50μm Thereafter, this n-type a-Si layer is exposed to a N2 gas atmosphere at 600~800℃ for 10~30 hours to cause solid phase growth, thereby forming a surface layer. An n-type p-Si layer 2 having 2,000 to 10,000 irregularities is formed.
（第２例）
基板Ｉ （第１例と同じ基板）の表面を研摩し、表面に
２ｏ Ｏ Ｃｌ人〜１．５μｍの凸凹を形成する。その
上に第１例と同じ条件でｎ型ａ−Ｓｉ層を形成した後、
これを第１例と同じ条件で固相成長させる。これにより
、表面に２０００人〜１μｍの凸凹を有するｎ型ｐ−Ｓ
ｉ層２が形成される。(Second example) The surface of a substrate I (same substrate as in the first example) is polished to form irregularities of 20 O Cl to 1.5 μm on the surface. After forming an n-type a-Si layer thereon under the same conditions as in the first example,
This is grown in a solid phase under the same conditions as in the first example. As a result, an n-type p-S with irregularities of 2,000 to 1 μm on the surface.
An i-layer 2 is formed.
（第３例）
基板１ （第１例と同じ基板）上に第１例と同じ条件で
ａ−Ｓｉ層を形成した後、これを第１例と同じ条件で固
相成長させ、ｎ型ｐ−Ｓｉ層を形成する。(Third example) After forming an a-Si layer on substrate 1 (the same substrate as in the first example) under the same conditions as in the first example, this was grown in solid phase under the same conditions as in the first example to form an n-type p-Si layer. - Forming a Si layer.
その後、その表面を下記に示す条件で、Ａｒガスもしく
はＣＦ． ＋ ｏｔガス中でスパッタする。Thereafter, the surface was treated with Ar gas or CF. +Sputter in ot gas.
＊貸の場合のスパッタ条件
Ａｒ流量 ： １０ − １００ＳＣＣＭ圧力 ：
０．５−５Ｘ １０−’Ｔｏｒｒ基板温度：室温
ＲＦパワー：１０〜１００Ｗ
時間 ：１０〜１００分
＊（Ｆ４＋Ｏｓの場合のスパッタ条件
総流量 ：１０〜ＩＯＯＳＣＣＭ
流量比 ： ＣＦ． ：Ｏ． ＝ ９： １圧力 ：
０． ５− ５Ｘ Ｉｔ）−’Ｔｏｒｒ基板温度：室
温
ＲＦノマワ ー ： １０〜 １００〜〜′時間 ：
１〜３０分
これらスパッタにより、表面に２０００人〜ＩＩＩｎ＋
の凸凹が形成されたｎ型ｐ−Ｓｉ層２が形成される。*Sputtering conditions for rental Ar flow rate: 10-100SCCM pressure:
0.5-5X 10-'Torr Substrate temperature: Room temperature RF power: 10-100W Time: 10-100 minutes* (Sputtering conditions for F4+Os Total flow rate: 10-IOOSCCM Flow rate ratio: CF.:O. = 9: 1 pressure:
0. 5- 5
By sputtering for 1 to 30 minutes, 2000 to IIIn+ is applied to the surface.
An n-type p-Si layer 2 having irregularities formed therein is formed.
（ト）発明の効果
本発明によれば、固相成長法により形成した多結晶シリ
コン膜と、非晶質シリコン膜または微結晶シリコン膜と
の接合を備える光起電力素子において、上記多結晶シリ
コン膜の上記非品質シリコン膜または微結晶シリコン膜
との接合面に、高さ約２０００人以上の凸凹が形成され
ているので、発電層内での光の吸４又が多くなり、光起
電力素子の変換効率を向上することができる。(G) Effects of the Invention According to the present invention, in a photovoltaic element comprising a junction between a polycrystalline silicon film formed by a solid phase growth method and an amorphous silicon film or a microcrystalline silicon film, the polycrystalline silicon Since unevenness with a height of about 2,000 or more is formed on the bonding surface of the film with the above-mentioned non-quality silicon film or microcrystalline silicon film, the absorption of light in the power generation layer increases, resulting in a decrease in photovoltaic power. The conversion efficiency of the element can be improved.
第１図は本発明の一実施例を示す概略的断面図、第２図
はｐ−Ｓｉ層表面の凸凹の高さと光起電力素子の変換効
率の関係を示す特性図である。
Ｏ
２０００
４０００
６０００
８０００
＋００００
凸凹０高さｌス）FIG. 1 is a schematic cross-sectional view showing an embodiment of the present invention, and FIG. 2 is a characteristic diagram showing the relationship between the height of unevenness on the surface of a p-Si layer and the conversion efficiency of a photovoltaic element. O 2000 4000 6000 8000 +0000 Unevenness 0 Height l)
Claims (1)
非晶質シリコン膜または微結晶シリコン膜との接合を備
える光起電力素子において、上記多結晶シリコン膜の上
記非晶質シリコン膜または微結晶シリコン膜との接合面
に、高さ約２０００Å以上の凸凹が形成されていること
を特徴とする光起電力素子。(1) A polycrystalline silicon film formed by solid phase growth method,
In a photovoltaic device having a junction with an amorphous silicon film or a microcrystalline silicon film, a bonding surface of the polycrystalline silicon film with the amorphous silicon film or the microcrystalline silicon film has a height of about 2000 Å or more. A photovoltaic element characterized by having unevenness formed therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014011A JPH03218683A (en) | 1990-01-24 | 1990-01-24 | Photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014011A JPH03218683A (en) | 1990-01-24 | 1990-01-24 | Photovoltaic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03218683A true JPH03218683A (en) | 1991-09-26 |
Family
ID=11849259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014011A Pending JPH03218683A (en) | 1990-01-24 | 1990-01-24 | Photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03218683A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4315959A1 (en) * | 1993-05-12 | 1994-11-24 | Max Planck Gesellschaft | Electronic device with microstructured electrodes and method for producing such a device |
| US7075002B1 (en) | 1995-03-27 | 2006-07-11 | Semiconductor Energy Laboratory Company, Ltd. | Thin-film photoelectric conversion device and a method of manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50158290A (en) * | 1974-06-10 | 1975-12-22 | ||
| JPS5760875A (en) * | 1980-09-25 | 1982-04-13 | Sharp Corp | Photoelectric conversion element |
| JPS60216585A (en) * | 1984-04-12 | 1985-10-30 | Matsushita Electric Ind Co Ltd | Solar cell element |
-
1990
- 1990-01-24 JP JP2014011A patent/JPH03218683A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50158290A (en) * | 1974-06-10 | 1975-12-22 | ||
| JPS5760875A (en) * | 1980-09-25 | 1982-04-13 | Sharp Corp | Photoelectric conversion element |
| JPS60216585A (en) * | 1984-04-12 | 1985-10-30 | Matsushita Electric Ind Co Ltd | Solar cell element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4315959A1 (en) * | 1993-05-12 | 1994-11-24 | Max Planck Gesellschaft | Electronic device with microstructured electrodes and method for producing such a device |
| US5810945A (en) * | 1993-05-12 | 1998-09-22 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. | Method of fabricating an electronic micropatterned electrode device |
| US7075002B1 (en) | 1995-03-27 | 2006-07-11 | Semiconductor Energy Laboratory Company, Ltd. | Thin-film photoelectric conversion device and a method of manufacturing the same |
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