JPS5997514A - Solar cell manufacturing method - Google Patents
Solar cell manufacturing methodInfo
- Publication number
- JPS5997514A JPS5997514A JP57204923A JP20492382A JPS5997514A JP S5997514 A JPS5997514 A JP S5997514A JP 57204923 A JP57204923 A JP 57204923A JP 20492382 A JP20492382 A JP 20492382A JP S5997514 A JPS5997514 A JP S5997514A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- voltage
- optical energy
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 description 17
- 239000007789 gas Substances 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（イ月支術分野
本発明は、アモルファスシリコン（以下ａ −８１と記
す）膜の製造法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing an amorphous silicon (hereinafter referred to as a-81) film.
（ロ）背景技術
従来、ａ−８ｉ膜はシラン（ＳｉＨ２）ガスをグロー放
電分解する、いわゆるプラズマＣＶＤ法、あるいはシリ
コン（Ｓｌ）クーゲットを水素を含むアルゴン（Ａｒ）
ガスでスパックする方法で製造されており、ａ−８ｉ膜
を用いた光起電力素子は、光電変換効率が８％を越える
ものが製造されていた。しかしながら、良好な光電変換
効率を得る光起電力素子に用いるａ−８ｉ膜の光学的エ
ネルギーギャップがほぼ１．７５ ｅ Ｖと一定である
ために、長波長光は、エネルギーが小さくａ−８ｉ膜内
で吸収されずに透過してしまう。また、短波長光は、ａ
−８ｉ膜内で吸収されるが、光の持つエネルギーが大き
すぎるため、ａ−８ｉ嘆の光学的エネルギーギャンプ以
」二の過剰エネルギーはすべてエネルギーロスとなると
いう欠点があった１、また従来、前記の欠点を解消せん
と、ａ−８ｉ膜に炭素を添加したいわゆる３ Ｓ Ｉｃ
膜を用い光学的エネルギーギャップを大きくして短波長
光を有効に利用する試みや、ａ−８ｉ膜にケルマニラム
（Ｇｅ）を添加したいわゆるａ−８ｌ膜を用い、光学的
エネルギーギャップを小さくして長波長光を有効に利用
する試みがなされていた。しかしながら、コレらのａ−
８ｉＣ膜や、ａ−８ｉＧｅ膜は、添加に伴ない、光電気
伝導部が大きく低ドするため、光学的エネルギーギヤノ
ブの拡大あるいは縮小の効果が、光電変換効率に大きく
寄与していないという問題点があった。(b) Background technology Conventionally, a-8i films have been produced using the so-called plasma CVD method, in which silane (SiH2) gas is decomposed by glow discharge, or silicon (Sl) cugetto is decomposed using argon (Ar) containing hydrogen.
It is manufactured by a gas spacking method, and photovoltaic elements using the a-8i film have been manufactured with photoelectric conversion efficiencies exceeding 8%. However, since the optical energy gap of the a-8i film used in photovoltaic devices to obtain good photovoltaic conversion efficiency is constant at approximately 1.75 eV, long-wavelength light has a small energy and is used in the a-8i film. It passes through without being absorbed. In addition, short wavelength light is a
However, since the energy of light is too large, all excess energy beyond the optical energy gap of the a-8i film becomes an energy loss. In order to solve the above-mentioned drawbacks, so-called 3S Ic, in which carbon is added to the a-8i film, has been developed.
Attempts have been made to effectively utilize short wavelength light by widening the optical energy gap using a film, and by using a so-called a-8l film, which is an a-8i film doped with kermanillam (Ge), to reduce the optical energy gap. Attempts have been made to effectively utilize long wavelength light. However, the a-
In the 8iC film and the a-8iGe film, the photoelectric conduction area is greatly reduced due to addition, so the problem is that the effect of enlarging or reducing the optical energy gear knob does not contribute significantly to the photoelectric conversion efficiency. There was a point.
（ハ）発明の開示
そこで、本発明者は、］１１１記問題点を解消すべく種
々検討を行なった結果、基板にａ Ｓｉ膜を形成する
方法において、＋ｉｉｆ記基板が導電性で、ａ−８ｉ膜
形成時に前記基板の導電部に直流電圧を印加することに
より、ａ−８ｉ膜の光電気伝導度を低ドすることなく、
光学的エネルギーギャップを自任に制御できることを見
出した・
本発明の１」的は、光電気伝導度を低下することなく、
光学的エネルギーギヤ・ノブが自在に制御された２−８
ｉ膜の製造方法を提供することにある。(C) Disclosure of the Invention Therefore, the present inventor has conducted various studies to solve the problems in [111], and found that in a method for forming an a Si film on a substrate, the +iif substrate is conductive and the a- By applying a DC voltage to the conductive portion of the substrate during formation of the 8i film, the photoelectric conductivity of the a-8i film is not reduced.
It has been discovered that the optical energy gap can be freely controlled. The first objective of the present invention is to
Optical energy gear knob freely controlled 2-8
An object of the present invention is to provide a method for manufacturing an i-film.
以ＩＪ、本発明をいくつかの実施例に基づき詳細実施例
１
第１図に本発明によるａ−８ｉ膜の光学的エネルギーギ
ャップと基板の導電部に印加した直流電圧との関係を示
す。基板はカラス板に、厚さ約６０００にの酸化スズ（
Ｓ ｎ ０２ ）からなる透明導電膜を形成したものを
用い、ａ −Ｓ ｉ １ｉｉｉ’７の形成条件は、水素
希釈シランガス濃度１０チ、シランカス圧力１ＴＯｒｒ
、シランカス流量５［］ＳＣＣＭ。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on several embodiments.Example 1 FIG. 1 shows the relationship between the optical energy gap of the a-8i film according to the present invention and the DC voltage applied to the conductive portion of the substrate. The substrate is a glass plate made of tin oxide (approximately 6000 mm thick).
The conditions for forming a-S i 1iii'7 were as follows: a hydrogen diluted silane gas concentration of 10 cm, and a silan gas pressure of 1 TOrr.
, Silancus flow rate 5[]SCCM.
高周波電力５００Ｗ、基板温度２５０で、嘆形成時間１
時間で一定とした。ａ−８ｉ膜形成時に前記基板の導電
部に、−３００Ｖ、−２００Ｖ、−１００Ｖ、ＯＶ、１
００Ｖ、２００Ｖ、 ろＯＯＶの直流電圧を印加し、
形成した膜の光学的エネルギーギャップをそれぞれ測定
した。第１図かられかるように、基板の導電部に直流電
圧を印加することにより、光学的エネルギーギャップを
変化させることができ、正電圧で光学的エネルギーキャ
ップを小さくまた負電圧で光学的エネルキーギャノプを
大きくすることができる。印加する直流電圧が＝ろＯＯ
Ｖから＋ろＯＯＶの範囲では、光学的エネルギーキャッ
プは１．７０ ｅ Ｖから１．８５ｅＶまて変化するこ
とができた。また、光電気伝導度は、いずれの直流１ル
圧を印加した場合でも１×１Ｏ−４（Ω・α）−１とほ
ぼ一定であった。なお、絶縁性のガラス基板上にも種々
直流電圧を印加してａ−８ｉ膜を前記と同じ条件で形成
したが、光学ｎ９ニオ、ルギーキャンブは、いずれのａ
−’Ｓ ｉ ｉｌｌも１、７５ ｅ Ｖと変化はなか
った。High-frequency power 500W, substrate temperature 250℃, formation time 1
It was set constant over time. When forming the a-8i film, the conductive parts of the substrate were exposed to -300V, -200V, -100V, OV, 1
Apply DC voltages of 00V, 200V, and 0OV,
The optical energy gap of each of the formed films was measured. As shown in Fig. 1, the optical energy gap can be changed by applying a DC voltage to the conductive part of the substrate. You can make the knob bigger. The applied DC voltage is = ROOO
In the range from V to OOV, the optical energy cap could vary from 1.70 eV to 1.85 eV. Further, the photoelectric conductivity was approximately constant at 1×1 O −4 (Ω·α) −1 no matter which DC voltage of 1 µl was applied. Note that the a-8i film was also formed on the insulating glass substrate under the same conditions as above by applying various DC voltages, but the optical
-'S i ill was also unchanged at 1.75 eV.
実施例２
第２図は、本発明によるａ−８ｉ膜を用いた光起電力素
子の一構造図である。５ｎＯｚからなる透明導電膜２を
形成したカラス板１にホウ素をＳ ｉ １−１４に対す
るＢ２１（６の流量比でｌＸ１０−３ドープしたＰ型ａ
−８１膜６を形成した後、ドープしないｌ型ａ−８１膜
４、さらにリンをＳｉ Ｈ４に対する１月１３の流量比
でｌＸｌ０ ’ ドープしたＩｌ型ａ−Ｓｉ膜５、
最後にアルミ電極６を形成した。ｌ型ａ −Ｓ ｉ １
ｌｉ４４は、６分割し、ｐ／！ｌ！！ａ−８Ｉ膜ろ側か
ら膜形成時に一３００Ｖの直流電圧を印加したｉ型ａ−
８ｉ膜７．０■の直流電圧を印加したｌ型ａ−８ｉ膜８
、」−ろＯＯＶの直流電圧を印加したｌ型ａ−８ｉ膜９
の６種類の膜で構成し、ｐ型ａ−８ｉ膜ろ側（光入射側
）のｌ型ａ−８ｉ膜７の光学的エネルギーギャンプを大
きく、またｎ型ａ−８ｉ膜５側のｉ型ａ−８ｉｌ模９の
光学的エネルギーギャップを小さくした。なお、シラン
ガス濃度、ガス圧力、シランガス流量、高周波電力、基
板温度はｐ型ａ−８ｉ膜６、直型ａ −ｓ Ｉ ＩＩ！
４、ｎ型ａ−８ｉ膜５、すべて実施例１と同じである
。直流電圧を印加しなかった光起電力素子の光電変換効
率が６．８％であったのに対し、本実施例による光起電
力素子の光電変換効率は、７４チであった。Example 2 FIG. 2 is a structural diagram of a photovoltaic device using an a-8i film according to the present invention. A glass plate 1 on which a transparent conductive film 2 of 5 nOz was formed was doped with P-type a doped with boron at a flow rate ratio of 1X10-3 to B21 (6).
After forming the -81 film 6, an undoped l-type a-81 film 4, an Il-type a-Si film 5 doped with phosphorus at a flow rate ratio of 1/13 to SiH4,
Finally, an aluminum electrode 6 was formed. Type l a-S i 1
li44 is divided into 6 parts, p/! l! ! a-8I type I a- 300V DC voltage was applied from the membrane filter side during film formation.
L-type a-8i film 8 to which a DC voltage of 7.0 cm was applied
, L-type a-8i film 9 to which a DC voltage of 00V was applied.
The optical energy gap of the l-type a-8i film 7 on the p-type a-8i film side (light incident side) is large, and the i-type film on the n-type a-8i film 5 side is large. The optical energy gap of type a-8il model 9 was reduced. Note that the silane gas concentration, gas pressure, silane gas flow rate, high frequency power, and substrate temperature are p-type a-8i film 6, direct type a-s I II!
4. The n-type a-8i film 5 is all the same as in Example 1. While the photovoltaic device to which no DC voltage was applied had a photoelectric conversion efficiency of 6.8%, the photovoltaic device according to this example had a photoelectric conversion efficiency of 74%.
なふ・、本実施例では、夏型ａ−８ｉ膜形成時に一５ｏ
ｏｖ、０■、＋３００Ｖと離散的に直流電圧を変化させ
たが、−ろ００ｖから＋３００Ｖ−１で連続的に変化さ
せても良いことは言うまでもない。In this example, when forming the summer type a-8i film,
Although the DC voltage was changed discretely from ov to 0V to +300V, it goes without saying that it may be changed continuously from -0V to +300V-1.
実施例６
第６図は、本発明によるａ−８１膜を用いた光起電力素
子の一構造図である。８１１０２からなる透明導電膜１
１を形成したガラス板１０に、ｐ型ａ −Ｓ ｉ膜１２
、ｌ型ａ−８ｉ膜１６、ｎ型ａ−８ｉ膜ｇ１４、ｐ型ａ
−８ｉｌｆＩ！１５．１型ａ−８ｉ膜１６、ＩＩ型ａ−
８ｉ膜１７、アルミ電極１８の順に形成した。ｐ型ａ−
８ｉ膜１２および１５のホウ素のドープ量、ｎ型ａ−８
Ｉ膜１４および１７のリンのドープははいずれ本ガスの
流量比で１×１０−３である。また１型ａ−８ｉ膜１６
ふ・よび１６は、膜形成時にそれぞれ−ろ００ｖ、＋ろ
ＯＯ■の直流電圧を印加し、光学的エネルギーギャップ
を各４人きくおよび小さくした。Example 6 FIG. 6 is a structural diagram of a photovoltaic device using an a-81 film according to the present invention. Transparent conductive film 1 made of 81102
A p-type a-Si film 12 is formed on the glass plate 10 on which the film 1 is formed.
, l type a-8i film 16, n type a-8i film g14, p type a
-8ilfI! 15.1 type a-8i film 16, type II a-
The 8i film 17 and the aluminum electrode 18 were formed in this order. p type a-
Boron doping amount of 8i films 12 and 15, n-type a-8
The phosphorus doping of the I films 14 and 17 is 1.times.10@-3 in terms of the flow rate ratio of the main gas. Also, type 1 a-8i film 16
For Fu-Yobi 16, DC voltages of -00V and +00V were applied during film formation, respectively, to increase and decrease the optical energy gap.
なお、シランガス濃度、ガス圧力、シランガス流量、高
周波電力、基板温度はすべてのａ−８ｉ膜ともに実施例
１と同じである。実施例ろと同構造で直流電圧を印加し
なかった場合、および本実施例の場合、それぞれ光起電
力素子の光電変換効率は６，９係および７．８チであっ
た。Note that the silane gas concentration, gas pressure, silane gas flow rate, high frequency power, and substrate temperature were the same as in Example 1 for all a-8i films. In the case of the same structure as in the example but no DC voltage was applied, and in the case of this example, the photovoltaic elements had photoelectric conversion efficiencies of 6, 9, and 7.8, respectively.
なお実施例では、１型ａ−８Ｉ膜の形成時のみに直流電
圧を印加する如く述べたが、ｐ型、ｉ型およびｎ型ａ−
８ｉ膜のうち少なくとも１つ以上の膜の形成時に直流電
圧を印加しても同様の効果が得られることは言うまでも
ない。In the example, it was described that DC voltage was applied only when forming a 1-type a-8I film, but p-type, i-type and n-type a-8I films were formed.
It goes without saying that the same effect can be obtained even if a DC voltage is applied during the formation of at least one of the 8i films.
以上詳細に説明したように、本発明により、光電気伝導
度を低下することなく光学的エネルギーギャップを１」
任に制御されたａ Ｓ＋膜を製造することができる。As explained in detail above, the present invention allows the optical energy gap to be reduced to 1'' without reducing photoelectric conductivity.
Arbitrarily controlled a S+ films can be produced.
又上述はプラズマＣＤＶの例で説明したが、前述スパッ
ター法でも同様の効果がある。Further, although the above explanation has been made using an example of plasma CDV, the above-mentioned sputtering method has similar effects.
第１図は本説明によるａ−８ｉ膜の光学的エイ、ルギー
キャンプと基板の導電部に印加した直流電圧との関係を
示す図であり、第２図は本発明によるａ−８ｉ膜を用い
た光起電力素子の一構造図であり、第６図は本発明によ
るａ−８ｉ膜を用いた光起電力素子の一構造図である。
１ ガラス板 ５・ｎ型ａ−８ｉ膜２−・−透明
導電膜 ６−アルミ電極３− ｐ型ａ−８ｉ膜
７・−１型ａ−８ｉ膜４ Ｉ型ａ−８ｉ膜 ８ Ｉ型
ａ−８ｉ膜９ ｌ型ａ−８ｉ膜 １４− ｎ型ａ−８ｉ
膜１０ カラス板 １５・・・ｐ型ａ−８ｉ膜１
１ 透明導電膜 １６・１型ａ−８ｉ膜１２−
ｐ型ａ−８ｉ膜 ｉ７− ｎ型ａ−８ｉ膜１３・・・ｌ
型ａ−８ｉ膜 １８ アルミ電極＄１ 図
−３０００３００
直滝電圧 （Ｖ）
才２図 ；ｔ７３図
伊丹市昆陽北１丁目１番１号住
友電気工業株式会社伊丹製作所
内
＠発 明 者 用合弘
伊丹市昆陽北１丁目１番１号住
友電気工業株式会社伊丹製作所
内
■出 願 人 住友電気工業株式会社
大阪市東区北浜５丁目１５番地FIG. 1 is a diagram showing the relationship between the optical ray and energy camp of the a-8i film according to the present explanation and the DC voltage applied to the conductive part of the substrate, and FIG. FIG. 6 is a structural diagram of a photovoltaic device using an a-8i film according to the present invention. 1 Glass plate 5. N-type a-8i film 2--Transparent conductive film 6-Aluminum electrode 3- P-type a-8i film
7.-1 type a-8i film 4 I-type a-8i film 8 I-type a-8i film 9 L-type a-8i film 14- N-type a-8i
Membrane 10 Glass plate 15...p-type a-8i membrane 1
1 Transparent conductive film 16/1 type a-8i film 12-
P-type a-8i film i7- N-type a-8i film 13...l
Type a-8i membrane 18 Aluminum electrode $1 Figure - 3000300 Direct voltage (V) Figure 2; T73 Figure 1-1-1, Konyo Kita, Itami City, Itami Works, Sumitomo Electric Industries, Ltd. Inventor: Hiroshi Yogo Sumitomo Electric Industries, Ltd. Itami Works, 1-1-1 Konyo Kita, Itami City Applicant Sumitomo Electric Industries, Ltd. 5-15 Kitahama, Higashi-ku, Osaka
Claims (3)
オイテ、 ｉｉｉ 記基板が導電性で、アモルファスシ
リコンＨＱ形成時に、前記基板の導電部に直流電圧を印
加することを特徴とするアモルファスシリコン膜の製造
法。(1) A method for forming an amorphous silicon film on a substrate; .
あることを特徴とする特許請求の範囲第（１）項記載の
アモルファスシリコン膜の製造法。(2) The method for producing an amorphous silicon film according to claim (1), wherein the amorphous silicon film is a film for a photovoltaic device.
マＣＶ Ｉ）又はスパック−法であることを特徴とする
特許請求の範囲士（１）項記載のアモルファスシリコン
膜の製造法。(3) The method for producing an amorphous silicon film according to claim (1), wherein the method for forming the amorphous silicon film is a plasma CVI) or a spackle method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57204923A JPS5997514A (en) | 1982-11-22 | 1982-11-22 | Solar cell manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57204923A JPS5997514A (en) | 1982-11-22 | 1982-11-22 | Solar cell manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5997514A true JPS5997514A (en) | 1984-06-05 |
| JPH0445991B2 JPH0445991B2 (en) | 1992-07-28 |
Family
ID=16498601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57204923A Granted JPS5997514A (en) | 1982-11-22 | 1982-11-22 | Solar cell manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5997514A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6113673A (en) * | 1984-06-25 | 1986-01-21 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | photovoltaic device |
| JPH0195770U (en) * | 1987-12-17 | 1989-06-26 | ||
| JPH02122575A (en) * | 1988-10-31 | 1990-05-10 | Kyocera Corp | Photoelectric conversion device |
| US7534628B2 (en) | 2006-10-12 | 2009-05-19 | Canon Kabushiki Kaisha | Method for forming semiconductor device and method for forming photovoltaic device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
| JPS56130466A (en) * | 1980-03-17 | 1981-10-13 | Canon Inc | Film forming method |
| JPS5855328U (en) * | 1981-10-09 | 1983-04-14 | 三洋電機株式会社 | switching device |
| JPS58144470A (en) * | 1981-12-16 | 1983-08-27 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Chemical phase deposition manufacture for light responsive amorphous alloy |
| JPS5913617A (en) * | 1982-07-16 | 1984-01-24 | Agency Of Ind Science & Technol | Manufacture of thin silicon film containing microcrystalline silicon |
-
1982
- 1982-11-22 JP JP57204923A patent/JPS5997514A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
| JPS56130466A (en) * | 1980-03-17 | 1981-10-13 | Canon Inc | Film forming method |
| JPS5855328U (en) * | 1981-10-09 | 1983-04-14 | 三洋電機株式会社 | switching device |
| JPS58144470A (en) * | 1981-12-16 | 1983-08-27 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Chemical phase deposition manufacture for light responsive amorphous alloy |
| JPS5913617A (en) * | 1982-07-16 | 1984-01-24 | Agency Of Ind Science & Technol | Manufacture of thin silicon film containing microcrystalline silicon |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6113673A (en) * | 1984-06-25 | 1986-01-21 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | photovoltaic device |
| JPH0195770U (en) * | 1987-12-17 | 1989-06-26 | ||
| JPH02122575A (en) * | 1988-10-31 | 1990-05-10 | Kyocera Corp | Photoelectric conversion device |
| US7534628B2 (en) | 2006-10-12 | 2009-05-19 | Canon Kabushiki Kaisha | Method for forming semiconductor device and method for forming photovoltaic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0445991B2 (en) | 1992-07-28 |
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