JPH0323633B2 - - Google Patents

Info

Publication number
JPH0323633B2
JPH0323633B2 JP56185151A JP18515181A JPH0323633B2 JP H0323633 B2 JPH0323633 B2 JP H0323633B2 JP 56185151 A JP56185151 A JP 56185151A JP 18515181 A JP18515181 A JP 18515181A JP H0323633 B2 JPH0323633 B2 JP H0323633B2
Authority
JP
Japan
Prior art keywords
group
group element
substrate
derivative
vapor stream
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56185151A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57145972A (en
Inventor
Horanzu Mosu Rodonii
Marian Fuakutaa Maaku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Telecommunications PLC
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Publication of JPS57145972A publication Critical patent/JPS57145972A/ja
Publication of JPH0323633B2 publication Critical patent/JPH0323633B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP18515181A 1980-11-18 1981-11-18 Formation of group iii-v compount Granted JPS57145972A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8036902 1980-11-18

Publications (2)

Publication Number Publication Date
JPS57145972A JPS57145972A (en) 1982-09-09
JPH0323633B2 true JPH0323633B2 (fr) 1991-03-29

Family

ID=10517376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18515181A Granted JPS57145972A (en) 1980-11-18 1981-11-18 Formation of group iii-v compount

Country Status (1)

Country Link
JP (1) JPS57145972A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720560A (en) * 1984-10-25 1988-01-19 Morton Thiokol, Inc. Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944788A (fr) * 1972-09-01 1974-04-27
JPS5136588A (ja) * 1974-09-25 1976-03-27 Sumitomo Electric Industries Tashindojikukeeburu

Also Published As

Publication number Publication date
JPS57145972A (en) 1982-09-09

Similar Documents

Publication Publication Date Title
US4436769A (en) Metal organic vapor deposition procedure for preparing group III--V compounds on a heated substrate
US3617371A (en) Method and means for producing semiconductor material
US4792467A (en) Method for vapor phase deposition of gallium nitride film
ATE133147T1 (de) Verfahren zur darstellung dampfförmiger reagenzien für die chemische abscheidung aus der dampfphase
JPS63227007A (ja) 気相成長方法
JPS6322591A (ja) 水素化ガリウム/トリアルキルアミン付加物
US5641540A (en) Preparation method for lead-zirconium-titanium based thin film
US4965222A (en) Method of manufacturing an epitaxial indium phosphide layer on a substrate surface
JPH0323633B2 (fr)
JP3882226B2 (ja) Mgドープ窒化物系III−V族化合物半導体結晶の成長方法
JPS63500757A (ja) 有機金属源及び元素状プニクチド源を利用する3−5型半導体の化学気相成長方法及び装置
US5688980A (en) Organometallic lead precursor, in-situ synthesis thereof, lead-titanium based thin film using the same, and preparation method therefor
JPS60169563A (ja) テルル化金属の製造方法及び装置
JPS6261321A (ja) 3−5族化合物半導体の製造方法及び装置
JPH0414814A (ja) 有機金属気相成長装置
JPH0412525A (ja) 有機金属化学気相成長装置
JPS6071596A (ja) 気相成長装置
JPH02126632A (ja) 化合物半導体結晶層の気相成長方法及びそれに用いる反応管
SU330811A1 (ru) Способ получения эпитаксиальной пленки
JP3106898B2 (ja) ビスマス含有膜の形成方法
JPS625634A (ja) 化合物半導体気相成長方法
JP2007031367A (ja) 有機アルミニウム化合物及び該化合物を用いたアルミニウム含有膜の製造方法
JP2700210B2 (ja) 化合物半導体の気相エピタキシャル成長法
JPH04219393A (ja) 気相エピタキシャル成長方法及び装置
JPH01272111A (ja) 化合物半導体の気相成長方法