JPH03243767A - Production of corrosion resistant vessel - Google Patents
Production of corrosion resistant vesselInfo
- Publication number
- JPH03243767A JPH03243767A JP3833190A JP3833190A JPH03243767A JP H03243767 A JPH03243767 A JP H03243767A JP 3833190 A JP3833190 A JP 3833190A JP 3833190 A JP3833190 A JP 3833190A JP H03243767 A JPH03243767 A JP H03243767A
- Authority
- JP
- Japan
- Prior art keywords
- corrosion
- container
- thin film
- vessel
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007797 corrosion Effects 0.000 title claims abstract description 31
- 238000005260 corrosion Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 13
- 238000009832 plasma treatment Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 24
- 239000000463 material Substances 0.000 abstract description 5
- 125000004429 atom Chemical group 0.000 abstract description 2
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 2
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 21
- 238000000576 coating method Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 239000002585 base Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Landscapes
- Details Of Rigid Or Semi-Rigid Containers (AREA)
- Chemical Vapour Deposition (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、ＣＶＤ装置の反応容器等耐食性が要求される
容器の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a method for manufacturing containers that require corrosion resistance, such as reaction containers for CVD equipment.
（従来の技術）
従来、ＣＶＤ装置等の反応容器、化学薬品の貯蔵・反応
容器、配管系等は、その使用にあたり活性化学種により
侵食、腐食を受け、その結果の生成物により容器および
内容物等が損傷しやすいため、ステンレス等からなる容
器の内面にテフロンコーティングやガラスライニングを
設けて耐食性を高めた反応容器が知られている。また、
同様の目的のため、ステンレス等からなる容器の内面に
、熱ＣＶＤ法により結晶ＳｉＣ薄膜を被覆した反応容器
等も知られている。(Prior Art) Conventionally, reaction vessels such as CVD equipment, chemical storage/reaction vessels, piping systems, etc. are subject to erosion and corrosion by active chemical species during use, and the resulting products damage the vessels and their contents. Reaction vessels are known in which the inner surface of a container made of stainless steel or the like is provided with a Teflon coating or a glass lining to increase corrosion resistance. Also,
For the same purpose, reaction vessels are also known in which the inner surface of a vessel made of stainless steel or the like is coated with a crystalline SiC thin film by thermal CVD.
（発明が解決しようとする課題）
しかしながら、上述した容器のうち、内面にテフロンコ
ーティングを施したものは緻密性が低く、残留不純物の
溶出がある問題があった。また、内面にガラスライニン
グを施したものは、ガラス中のアルカリ等の不純物の溶
出があるとともに、ガラスライニングは衝撃に弱く、細
かい部分への施工が困難な問題があった。さらに、熱Ｃ
ＶＤによるＳｉＣ被膜は上述した問題をある程度解消で
きるものの、ＳｉＣ被膜の形成は１１００℃以上の高温
が必要であるため、耐熱性に劣る例えばアルミニウム等
の金属材料や高分子材料からなる容器への施工が不可能
な問題があった。(Problems to be Solved by the Invention) However, among the above-mentioned containers, those whose inner surfaces were coated with Teflon had a problem of low density and the elution of residual impurities. Further, in the case where the inner surface is lined with glass, there is a problem that impurities such as alkali in the glass are leached out, and the glass lining is weak against impact, making it difficult to apply it to small parts. Furthermore, heat C
Although the SiC coating by VD can solve the above-mentioned problems to some extent, the formation of the SiC coating requires a high temperature of 1100°C or higher, so it cannot be applied to containers made of metal materials such as aluminum or polymer materials that have poor heat resistance. There was a problem that made it impossible.
本発明の目的は上述した課題を解消して、耐食性が良好
でしかも容器の基体として低融点の材料を使用可能な耐
食性容器の製造方法を提供しようとするものである。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a method for manufacturing a corrosion-resistant container that has good corrosion resistance and can use a material with a low melting point as the base of the container.
（課題を解決するための手段）
本発明の耐食性容器の製造方法は、容器基体内表面をプ
ラズマ処理したのち、該内表面にプラズマＣＶＤ法によ
り耐食性薄膜を形成したことを特徴とするものである。(Means for Solving the Problems) The method for manufacturing a corrosion-resistant container of the present invention is characterized in that after plasma-treating the inner surface of the container base, a corrosion-resistant thin film is formed on the inner surface by plasma CVD. .
（作 用）
上述した構成において、容器基体内表面を前処理として
好ましくは希ガスプラズマ処理をした後、プラズマＣＶ
Ｄにより耐食性薄膜好ましくはＳｉ／Ｃの原子数比率を
厚さ方向に変化させて傾斜機能を持たせた非晶質のＳｉ
Ｃ薄膜を形成することにより、テフロンコーチイブおよ
びガラスライニング時の問題を解消しつつ、低温で所定
のＳｉＣ被膜を容器基体内表面に形成できるため、アル
ミニウム等の低融点金属材料および高分子材料等を容器
基体として使用できる。(Function) In the above-mentioned configuration, the inner surface of the container base is preferably subjected to rare gas plasma treatment as a pretreatment, and then plasma CVD is performed.
D is a corrosion-resistant thin film, preferably amorphous Si that has a gradient function by changing the Si/C atomic ratio in the thickness direction.
By forming a C thin film, it is possible to form a prescribed SiC film on the inner surface of the container base at a low temperature while solving the problems associated with Teflon coating and glass lining. can be used as a container substrate.
ここで、前処理としてプラズマ処理好ましくはＡｒガス
等の希ガスプラズマ処理が必要なのは、洗浄後の容器基
体内表面を清浄にして容器の内表面における強固なＳｉ
Ｃ被膜の形成に必要なためである。Here, plasma treatment, preferably rare gas plasma treatment such as Ar gas, is necessary as a pretreatment to clean the inner surface of the container base after cleaning and to form a strong Si layer on the inner surface of the container.
This is because it is necessary for forming the C film.
また、プラズマＣＶＤ法により耐食性薄膜好ましくは傾
斜機能を有する非晶質のＳｉＣ薄膜を形成する必要があ
るのは、プラズマにより低温で原料ガスを分解でき、低
温で非晶質のＳｉＣ薄膜を形成できるためである。In addition, it is necessary to form a corrosion-resistant thin film, preferably an amorphous SiC thin film with a gradient function, by the plasma CVD method because the raw material gas can be decomposed at a low temperature by plasma, and an amorphous SiC thin film can be formed at a low temperature. It's for a reason.
さらに、非晶質のＳｉＣ被膜としてＳｉ／Ｃの原子数の
比率を変化させて傾斜機能を持たせると好ましいのは、
容器基体内表面との密着力を高め、熱サイクルによる応
カバガレに対しても耐性が高い被膜が得られるためであ
る。このとき、基体側のＳｉ／Ｃ原子数比率を高く例え
ば３０程度以下好ましくは６程度以下とし、被膜表面の
Ｓｉ／Ｃ原子数比率を例えば１程度と低くして、被膜の
厚さ方向に徐々に傾斜させて変化させる必要があり、こ
れにより基体に対しては強固な接着強度を得られるとと
もに、被膜表面には高い耐食性を有する非晶質ＳｉＣ被
膜が得られるため好ましい。Furthermore, it is preferable to provide a gradient function by changing the ratio of Si/C atoms as an amorphous SiC film.
This is because a coating can be obtained that has increased adhesion to the inner surface of the container base and is highly resistant to flaking due to thermal cycles. At this time, the Si/C atomic ratio on the substrate side is made high, for example, about 30 or less, preferably about 6 or less, and the Si/C atomic number ratio on the coating surface is made low, for example, about 1, and gradually increases in the thickness direction of the coating. This is preferable because it is possible to obtain strong adhesive strength to the substrate and to obtain an amorphous SiC film having high corrosion resistance on the film surface.
（実施例）
第１図（ａ）、 （ｂ）はそれぞれ本発明の耐食性容器
の製造方法の前処理工程と被膜形成工程の一例を示す図
である。本実施例では、通常のＣＶＤ装置で使用する反
応容器１内に所定のＳｉ／Ｃ原子比率の非晶質のＳｉＣ
被膜を形成する例を示している。(Example) FIGS. 1(a) and 1(b) are diagrams showing an example of a pretreatment step and a film forming step, respectively, of the method for manufacturing a corrosion-resistant container of the present invention. In this example, amorphous SiC with a predetermined Si/C atomic ratio was
An example of forming a film is shown.
まず１、第１図（ａ）に示すように、ガス導入口２およ
びガス排出口３とを有する反応容器ｌに、ヒータ４およ
び高周波電源５を設け、Ａｒガスをガス導入口２から供
給し、ガス排出口３から吸引することにより前処理とし
ての希ガスプラズマ処理をして、反応容器ｌの内表面を
清浄にする。このときのＡｒプラズマ処理の一条件は、
Ａｒ流量： ５０ｓｅｃｍ。First, as shown in FIG. 1(a), a heater 4 and a high frequency power source 5 are provided in a reaction vessel l having a gas inlet 2 and a gas outlet 3, and Ar gas is supplied from the gas inlet 2. , a rare gas plasma treatment is performed as a pretreatment by suctioning from the gas outlet 3 to clean the inner surface of the reaction vessel 1. One of the conditions for Ar plasma treatment at this time is:
Ar flow rate: 50sec.
ガス圧カニ ０．１Ｔｏｒｒ 、パワー＋５０Ｗ、処理
温度：２５°Ｃであった。The gas pressure was 0.1 Torr, the power was +50 W, and the processing temperature was 25°C.
次に、第１図（ｂ）に示すように、高周波電源５により
例えばＩＯＷのＲＦパワーを付加し、ヒータ４により５
００℃までの温度に加熱した状態で、ガス導入口２から
所定比率のＳｉＨ４の水酸化物等のＳｉ源原料およびＣ
Ｈ４等のＣ源原料からなる原料ガスを供給するとともに
、ガス排気口３から容器ｌ内の雰囲気ガスを吸引する。Next, as shown in FIG.
Si source material such as SiH4 hydroxide and C
A raw material gas consisting of a C source raw material such as H4 is supplied, and at the same time, atmospheric gas in the container l is sucked through the gas exhaust port 3.
これにより、容器ｌ内金体をプラズマ放電状態として、
所定のＳｉＣ被膜６を形成する。前処理工程および被膜
形成工程において、直流電源７により例えば１００ Ｖ
の電界を付与し、イオン衝撃力を高めてより強固な被膜
を形成する場合もある。一定組成のＳｉＣ被膜６を形成
するときは、原料種およびその流量を被膜形成工程中一
定にし、所定のＳｉ／Ｃの原子数比率が変化する傾斜機
能を有するＳｉＣ被膜６を形成するときは、膜形成工程
中容原料種の流量を徐々に変化させることにより、傾斜
機能を持たせている。As a result, the metal body inside the container l is brought into a plasma discharge state,
A predetermined SiC film 6 is formed. In the pretreatment process and film forming process, the DC power supply 7 generates a voltage of, for example, 100 V.
In some cases, an electric field is applied to increase the ion bombardment force to form a stronger film. When forming the SiC film 6 with a constant composition, the raw material type and its flow rate are kept constant during the film forming process, and when forming the SiC film 6 having a gradient function in which the predetermined Si/C atomic ratio changes, A gradient function is provided by gradually changing the flow rate of the raw material species during the film forming process.
以下の第１表に本願発明の成膜条件の一例をまとめて示
す。Table 1 below summarizes an example of the film forming conditions of the present invention.
以下、実際の例について説明する。An actual example will be explained below.
大墨堡
まず、アルミニウムよりなるＣＶＤ装置用反応容器を準
備し、準備した反応容器に対して第３表に示すようにＡ
ｒプラズマ処理を実施するものとしないものを作製した
。得られたＡ「プラズマ処理後またはそのままの容器に
対して、初期流量を第３表に示す原料ガスとしてのＳｉ
Ｈ，とＣＨ，を使用し、容器の温度を３００°Ｃ，ＲＦ
パワー１０Ｗ、ガス圧力１００ｍＴｏｒｒ、直流バイア
ス１００ Ｖの条件で原料ガスを初期の流量から徐々に
変化させて、第３表に示す膜圧でＳｉ／Ｃの原子数比が
基体側から膜表面へ向かって徐々に小さくなるよう変化
する非晶質ＳｉＣ被膜を形成して、本発明および比較例
の耐食性容器を得た。なお、膜厚ｌＯμｍのものは容器
内面をガラスピーズ処理で凹凸をつけた状態で行った。First, prepare a reaction vessel for a CVD device made of aluminum, and apply A to the prepared reaction vessel as shown in Table 3.
One was prepared with and one without r plasma treatment. After the plasma treatment or as is, the initial flow rate of Si as the source gas is shown in Table 3.
Using H, and CH, the temperature of the container is 300°C, RF
The raw material gas was gradually changed from the initial flow rate under the conditions of power 10 W, gas pressure 100 mTorr, and DC bias 100 V, and the Si/C atomic ratio was changed from the substrate side to the film surface at the film pressure shown in Table 3. Corrosion-resistant containers of the present invention and comparative examples were obtained by forming an amorphous SiC film that gradually became smaller. In addition, in the case of a film having a film thickness of 10 μm, the inner surface of the container was roughened by glass beads treatment.
得られた本発明及び比較例の耐食性容器に対して、耐食
性の指標となるＣｊ７Ｆ！曝露試験と、熱サイクル後の
ハガレおよびｌＦ３曝露試験後の目視による色変化を調
べた。熱サイクル試験は、Ｎ２気流中で室温（２５℃）
から昇温速度１００°Ｃ／分で５０００Ｃまで昇温して
ｌＯ分間保持後降温速度１００℃／分で室温まで降温さ
せるのを１サイクルとし、１０サイクル後の被膜のハガ
レを求めた。Cj7F!, which is an indicator of corrosion resistance, for the obtained corrosion-resistant containers of the present invention and comparative examples. An exposure test, peeling after a heat cycle, and visual color change after an IF3 exposure test were investigated. Thermal cycle test was performed at room temperature (25°C) in a N2 stream.
One cycle consisted of raising the temperature to 5000C at a heating rate of 100°C/min, holding it for 10 minutes, and then lowering the temperature to room temperature at a cooling rate of 100°C/min, and peeling of the coating after 10 cycles was determined.
耐食性の指標となるＣＩＦ、曝露試験は、真空容器中に
試験体を入れ真空排気後窒素希釈５％のｃＡｐ３ガスを
室温で１気圧充填して実施した。なお、真空容器は、試
験体の被膜がすべて反応・消滅してもＣｚＦ、ガス濃度
は３％以上になるだけの容量を有している。その後、曝
露試験後の被膜の色変化（目視）、曝露試験前後のＣＩ
Ｓ＋ ５ｉ２ｐのＥＳＣＡピークの位置変化をそれぞれ
求めた。The CIF and exposure tests, which are indicators of corrosion resistance, were carried out by putting the specimen in a vacuum container, evacuation, and then filling it with 5% cAp3 gas diluted with nitrogen at 1 atm at room temperature. The vacuum container has enough capacity to maintain a CzF gas concentration of 3% or more even if all the coatings on the test specimen react and disappear. After that, the color change of the film after the exposure test (visual observation), CI before and after the exposure test
Changes in the position of the ESCA peak of S+ 5i2p were determined.
また、ＥＳＣＡによる表面分析は、予じめ試験前の試料
において表面をＡｒイオンエツチングしていき信号強度
が変化しなくなるまでの時間を決定しておき、すべての
試料に対する測定時にこの時間だけ表面被膜を除去する
エツチング処理を施して測定値を得た。ＥＳＣＡによる
ピークの位置は注目原子の化学結合状態を反映しており
、第２表に示すような化学シフトを有している。In addition, in surface analysis by ESCA, the surface of the sample before the test is etched with Ar ions, and the time until the signal intensity stops changing is determined in advance. The measured values were obtained by performing an etching process to remove the . The position of the peak determined by ESCA reflects the chemical bonding state of the target atom, and has chemical shifts as shown in Table 2.
第２表
これらの値から曝露前にはＳｉおよびＣの結合に関して
Ｃ−Ｃ，Ｃ−３ｉ、 ５ｉ−３ｉのいずれが多い状態で
あるかが推定でき、曝露後はＣ−ＦあるいはＳｉ −Ｆ
結合量の多寡を推定でき、曝露前後のシフト量の差が小
さいほど耐食性が良好であることを示している。From these values in Table 2, it can be estimated whether C-C, C-3i, or 5i-3i has more Si and C bonds before exposure, and after exposure, C-F or Si-F
The amount of bonding can be estimated, and the smaller the difference between the amount of shift before and after exposure, the better the corrosion resistance.
なお、Ｓｉ／Ｃの比率は、標準試料としてＦＺ−３ｉ単
結晶およびグラファイトを用いて補間法により決定した
。結果を第３表に示す。Note that the Si/C ratio was determined by interpolation using FZ-3i single crystal and graphite as standard samples. The results are shown in Table 3.
第３表の結果から、前処理としてＡ「プラズマ処理を実
施した本発明例は、前処理としてＡｒプラズマ処理を実
施しなかった比較例より、ＥＳＣＡピーク差が小さく良
好な耐食性を有するとともに、熱サイクル後のハガレも
ないことがわかる。From the results in Table 3, it can be seen that the example of the present invention in which A plasma treatment was performed as a pretreatment has a smaller ESCA peak difference and better corrosion resistance than the comparative example in which Ar plasma treatment was not performed as a pretreatment. It can be seen that there is no peeling after the cycle.
（発明の効果）
以上の説明から明らかなように、本発明の耐食性容器の
製造方法によれば、前処理としてプラズマ処理を実施し
好ましくはＳｉ／Ｃの原子数比において傾斜機能を持た
せた非晶質のＳｉＣ薄膜を容器内表面に形成することに
より、良好な性状の耐食性被膜を低温で形成できるため
、アルミニウム等の低融点金属材料および高分子材料等
を容器とする耐食性）器を得ることができる。(Effects of the Invention) As is clear from the above description, according to the method for manufacturing a corrosion-resistant container of the present invention, plasma treatment is performed as a pretreatment to preferably provide a graded function in the Si/C atomic ratio. By forming an amorphous SiC thin film on the inner surface of the container, a corrosion-resistant coating with good properties can be formed at a low temperature, so a corrosion-resistant container can be obtained using a container made of a low-melting metal material such as aluminum or a polymeric material. be able to.
第１図（ａ）、 （ｂ）はそれぞれ本発明の耐食性容器
の製造方法の前処理工程と被膜形成工程の一例を示す図
である。
ｌ・・・反応容器 ２・・・ガス導入口３・・
・ガス排出口 ４・・・ヒータ５・・・高周波電
源
７・・・直流゛市、１原
６・・・ＳｉＣ被膜
第１図FIGS. 1(a) and 1(b) are diagrams showing an example of a pretreatment step and a film forming step, respectively, of the method for manufacturing a corrosion-resistant container of the present invention. l...Reaction container 2...Gas inlet 3...
・Gas exhaust port 4...Heater 5...High frequency power source 7...DC source 6...SiC coating Figure 1
Claims (2)
にプラズマＣＶＤ法により耐食性薄膜を形成したことを
特徴とする耐食性容器の製造方法。1. 1. A method for manufacturing a corrosion-resistant container, comprising subjecting the inner surface of the container base to plasma treatment, and then forming a corrosion-resistant thin film on the inner surface by plasma CVD.
にあたり、Ｓｉ／Ｃの原子数比率が前記容器基体側から
前記薄膜表面に向かって小さくなるよう傾斜させた組成
の非晶質のＳｉＣ薄膜を耐食性薄膜として容器基体内表
面に形成することを特徴とする請求項１記載の耐食性容
器の製造方法。2. In forming the corrosion-resistant thin film by the plasma CVD method, an amorphous SiC thin film having a composition in which the atomic ratio of Si/C decreases from the container base side toward the thin film surface is used as the corrosion-resistant thin film in the container. 2. The method of manufacturing a corrosion-resistant container according to claim 1, wherein the method is formed on the inner surface of the base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2038331A JPH089785B2 (en) | 1990-02-21 | 1990-02-21 | Method for manufacturing corrosion resistant container |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2038331A JPH089785B2 (en) | 1990-02-21 | 1990-02-21 | Method for manufacturing corrosion resistant container |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03243767A true JPH03243767A (en) | 1991-10-30 |
| JPH089785B2 JPH089785B2 (en) | 1996-01-31 |
Family
ID=12522298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2038331A Expired - Fee Related JPH089785B2 (en) | 1990-02-21 | 1990-02-21 | Method for manufacturing corrosion resistant container |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH089785B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141377A (en) * | 1982-02-16 | 1983-08-22 | Seiko Epson Corp | Plasma coating method |
| JPS62127467A (en) * | 1985-11-28 | 1987-06-09 | Toshiba Corp | Member deposited with ceramics and its production |
| JPS6366902A (en) * | 1986-09-08 | 1988-03-25 | 株式会社村田製作所 | Variable resistor |
-
1990
- 1990-02-21 JP JP2038331A patent/JPH089785B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141377A (en) * | 1982-02-16 | 1983-08-22 | Seiko Epson Corp | Plasma coating method |
| JPS62127467A (en) * | 1985-11-28 | 1987-06-09 | Toshiba Corp | Member deposited with ceramics and its production |
| JPS6366902A (en) * | 1986-09-08 | 1988-03-25 | 株式会社村田製作所 | Variable resistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH089785B2 (en) | 1996-01-31 |
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