JPH03248452A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH03248452A JPH03248452A JP4608290A JP4608290A JPH03248452A JP H03248452 A JPH03248452 A JP H03248452A JP 4608290 A JP4608290 A JP 4608290A JP 4608290 A JP4608290 A JP 4608290A JP H03248452 A JPH03248452 A JP H03248452A
- Authority
- JP
- Japan
- Prior art keywords
- lead terminal
- outer lead
- external lead
- length
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3405—Edge mounted components, e.g. terminals
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は半導体装置に関し、特に高周波半導体装置にお
ける外部リード端子の取付構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a mounting structure for external lead terminals in a high frequency semiconductor device.
[従来の技術]
第6図および第7図はそれぞれ従来の高周波半導体装置
におけるセラミック・パッケージの外部リード端子の取
付部の構造を示すもので、外部リード端子3はいずれも
外部リード端子取付部2の縁端部に設けた段差9か或は
リードの先端に設けた折り曲げ部10と外部リード端子
取付部2との間の隙間をそれぞれロー材温りとして取付
けられ、セラミック基板1上の内部配線と接続される。[Prior Art] FIGS. 6 and 7 respectively show the structure of the external lead terminal mounting part 2 of a ceramic package in a conventional high-frequency semiconductor device. The inner wiring on the ceramic substrate 1 is installed by using the step 9 provided at the edge of the lead or the gap between the bent part 10 provided at the tip of the lead and the external lead terminal attachment part 2 as brazing material. connected to.
このように従来の外部リード端子の取付構造はいずれも
リード強度を確実ならしめるためロー材温りを形成する
のが特徴である。ロー材温りの形成にはセラミック基板
側を加工成型するやり方と、リード側を折り曲げ成型す
るやり方の2つがあるが、リード側を折り曲げ成型する
方法の場合は、第7図に示すように折り曲げ角度を比較
的浅い10〜20°に設定するのが通常である。As described above, all conventional mounting structures for external lead terminals are characterized by forming a brazing material temperature in order to ensure lead strength. There are two ways to form the brazing material temperature: one is to process and mold the ceramic substrate side, and the other is to bend and mold the lead side. In the case of the method of bending and molding the lead side, as shown in Figure 7, The angle is usually set at a relatively shallow angle of 10 to 20 degrees.
[発明が解決しようとする課題〕
しかしながら、いずれの構造をとるにしても、リードの
接着強度を確保するためには、パッケージ上の外部リー
ド端子取付部2の長さ!は少なくとも0.75mm以上
に設定されていることが必要である。この長さaの設定
には加工技術上の制約も加わるので、実際に使用されて
いるパッケージでは通常1mm程度のものとなる。また
、この外部リード端子の取付構造では、第6図および第
7図からも明らかなように外部リード端子3は取付部2
の面と同じ高さで引出されるので、回路基板等への実装
を容易にするためにはセラミック基板1側か或はセラミ
ック枠体4の何れか一方の向きに曲げ加工しなければな
らない。このリード曲げ加工は、通常、機械的精度上の
問題とリードに加わるストレスの緩和とを考えて、セラ
ミック基板1の縁端から0.5〜1.On++n離れた
ところで行なわれるので、外部リード端子3の全長は1
.5〜2.0mm程度にもなり冗長化することとなる。[Problems to be Solved by the Invention] However, no matter which structure is adopted, in order to ensure the adhesive strength of the leads, the length of the external lead terminal mounting portion 2 on the package must be determined! must be set to at least 0.75 mm. Since processing technology constraints are also added to the setting of the length a, it is usually about 1 mm in packages actually used. Furthermore, in this external lead terminal mounting structure, as is clear from FIGS. 6 and 7, the external lead terminal 3 is attached to the mounting portion 2.
Since it is pulled out at the same height as the surface of the ceramic frame 4, it is necessary to bend it toward either the ceramic substrate 1 side or the ceramic frame 4 in order to facilitate mounting on a circuit board or the like. This lead bending process is normally performed by 0.5 to 1.0 mm from the edge of the ceramic substrate 1, taking into consideration mechanical precision issues and relaxation of stress applied to the leads. Since it is performed at a distance of On++n, the total length of the external lead terminal 3 is 1
.. The length is about 5 to 2.0 mm, resulting in redundancy.
一般に、高周波半導体装置では、高周波特性を確保する
ためパッケージの外形が小さく作られるので、パッケー
ジ内部の配線長も短い。従って、最近ではこのように外
部リード端子取付部2の長さが僅か1mmで短かいよう
に見えても、この部分における信号伝達損失が無視でき
ないものとなって来ている。更にこのリード取付構造で
はリードの曲げによるリード長の冗長化も伴いこれによ
る信号伝達損失が更に加わるという構造的欠点がある。Generally, in a high-frequency semiconductor device, the package is made to have a small external shape in order to ensure high-frequency characteristics, so the wiring length inside the package is also short. Therefore, even though the length of the external lead terminal mounting portion 2 is only 1 mm, which may seem short, the signal transmission loss in this portion has become non-negligible. Furthermore, this lead attachment structure has a structural drawback in that the lead length is made redundant due to bending of the lead, which further adds to signal transmission loss.
本発明の目的は、上記の情況に鑑み、信号伝達損失の増
大を招〈従来の外部リード端子取付部の構造的欠陥を改
善、した半導体装置を提供することである。SUMMARY OF THE INVENTION In view of the above circumstances, an object of the present invention is to provide a semiconductor device in which the structural defects of the conventional external lead terminal mounting portion, which cause an increase in signal transmission loss, are improved.
[課題を解決するための手段]
本発明によれば、半導体装置は、セラミック基板の外縁
部に外部リード端子を配するセラミック・パッケージ構
造の半導体装置において、前記外部リード端子をL型形
状に成型するとともにその一方の先端を前記セラミック
基板上の外部リード端子取付部の面上に突き当てるよう
にロー接着することを含んで構成される。[Means for Solving the Problems] According to the present invention, a semiconductor device has a ceramic package structure in which external lead terminals are arranged on the outer edge of a ceramic substrate, and the external lead terminals are formed into an L-shape. At the same time, one tip thereof is brazed and bonded so as to abut against the surface of the external lead terminal attachment portion on the ceramic substrate.
[作 用 〕
本発明によれば、外部リード端子は形状がL型に成型さ
れ、その一方の先端をセラミック基板上のリード端子取
付部に突き当ててロー付けされるので、リード端子取付
部の所要長を最小必要限にまで短縮し、かつ実装する回
路基板上までのリード全体長を最短化するもので、外部
ノード端子による信号伝達損失の低減化を可能とする。[Function] According to the present invention, the external lead terminal is molded into an L-shape and is brazed by abutting one end of the external lead terminal against the lead terminal mounting portion on the ceramic substrate. This shortens the required length to the minimum required length and minimizes the overall length of the lead up to the circuit board on which it is mounted, making it possible to reduce signal transmission loss due to external node terminals.
[実施例] 以下図面を参照して本発明の詳細な説明する。[Example] The present invention will be described in detail below with reference to the drawings.
第1図および第2図はそれぞれ本発明の一実施例を示す
セラミック・パッケージの斜視図およびその外部リード
端子取付部の拡大構造図である。本実施例によれば、外
部リード端子3は短辺部をセラミック枠体4の高さを超
える長さに成型したL型形状とされ、この短辺部をセラ
ミック枠体4の側壁に沿って垂直に立て、セラミック基
板1の外周部に配設された外部リード端子取付部2の面
上に短辺部の先端が突き当たる形でロー接着される。こ
こで、5はこの接着に用いられるAg−Cuその他の金
属ロー材を示している。本実施例によると、外部リード
端子3がリード導体の先端部を外部リード端子取付部2
に対しほぼ直角に突き当てる形で接着しているので、外
部リード端子取付部2の長さβは従来よりも短くてすむ
。すなわち、外部リード端子取付部2の長さ2が従来の
半分の0.5n+m程度に設定された場合でも、250
g程度の強度は充分確保される。また、外部リード端子
3の長辺部はセラミック枠体4より高い位置からセラミ
ック基板1の面と平行方向に引出されるので、従来のよ
うに曲げ加工によるリード長の冗長化を伴うことなく、
このままの状態で回路基板上への実装が可能となる。FIGS. 1 and 2 are a perspective view of a ceramic package and an enlarged structural view of an external lead terminal mounting portion thereof, respectively, showing an embodiment of the present invention. According to this embodiment, the external lead terminal 3 has an L-shape in which the short side is molded to a length exceeding the height of the ceramic frame 4, and the short side is formed along the side wall of the ceramic frame 4. The ceramic substrate 1 is vertically erected and solder-bonded with the tips of the short sides abutting the surface of the external lead terminal mounting portion 2 disposed on the outer periphery of the ceramic substrate 1 . Here, 5 indicates a metal brazing material such as Ag-Cu used for this bonding. According to this embodiment, the external lead terminal 3 connects the tip of the lead conductor to the external lead terminal mounting portion 2.
Since the external lead terminal attaching portion 2 is bonded in such a manner that it abuts at a substantially right angle, the length β of the external lead terminal attaching portion 2 can be shorter than that of the conventional case. In other words, even if the length 2 of the external lead terminal attachment part 2 is set to about 0.5n+m, which is half of the conventional length,
A sufficient strength of about 100 g is ensured. In addition, since the long side portions of the external lead terminals 3 are pulled out in a direction parallel to the surface of the ceramic substrate 1 from a position higher than the ceramic frame 4, there is no need to make the lead length redundant due to bending as in the conventional case.
It becomes possible to mount it on a circuit board in this state.
第3図は上記実施例半導体装置の回路基板上への実装状
態図で、外部リード端子3の全長を1.0〜1.5mm
に押さえ、パッケージの内部配線から回路基板6に至る
配線のインダクタンスしおよび配線間容量Cをそれぞれ
従来構造のものより低減させ、対向配線間共振周波数f
。を高め得ることを示している。例えば、L’=4.2
nH。FIG. 3 is a diagram showing how the semiconductor device of the above embodiment is mounted on a circuit board, and the total length of the external lead terminal 3 is set to 1.0 to 1.5 mm.
The inductance of the wiring from the internal wiring of the package to the circuit board 6 and the inter-wiring capacitance C are respectively lowered than those of the conventional structure, and the resonant frequency f between opposing wirings is reduced.
. This shows that it is possible to increase For example, L'=4.2
nH.
C立0.2pF、 f、 =3.9GHzの従来値をそ
れぞれL # 3.8nH,C# 0.18pF、 f
a= 4.8GHzとすることができるので、外部リー
ド端子3による信号伝達損失の低減化を図り得る。The conventional values of C# 0.2pF, f, = 3.9GHz are respectively changed to L# 3.8nH, C# 0.18pF, f
Since a can be set to 4.8 GHz, signal transmission loss due to the external lead terminal 3 can be reduced.
第4図および第5図はそれぞれ本発明の他の実施例を示
す外部リード端子取付部の斜視構成図およびそのリード
端子の加工成型図である。FIG. 4 and FIG. 5 are a perspective view of an external lead terminal mounting portion and a processed molding view of the lead terminal, respectively, showing other embodiments of the present invention.
本実施例によれば、L型形状の外部リード端子3の短辺
部の長さがセラミック枠体4の高さを超えないように成
型された場合が示される。この場合、短辺部7の先端部
は円弧状に細く加工されているが、これは、第5図に示
すような形状のリード導体片を準備し、これを点線A−
A′から矢印方向に上下いずれかの方向に90°折り曲
げ、ついで短辺部7の先端に当たる部分に設けられたハ
ーフエツチングの満8から切取れば容易に製作すること
ができる。本実施例のように、短辺部7の先端部が円弧
状となっていると、外部リード端子取付部2上にロー付
けされた際、セラミック枠体4の側壁面へのロー材の這
い上がりを抑制する働きを持たせることができる。According to this embodiment, a case is shown in which the L-shaped external lead terminal 3 is molded so that the length of the short side does not exceed the height of the ceramic frame 4. In this case, the tip of the short side part 7 is processed into a thin arc shape, but this is done by preparing a piece of lead conductor shaped as shown in FIG.
It can be easily manufactured by bending it by 90 degrees in either direction up or down in the direction of the arrow from A', and then cutting it out from the half-etched part 8 provided at the tip of the short side part 7. If the tip of the short side portion 7 is arcuate as in this embodiment, the brazing material may creep onto the side wall surface of the ceramic frame 4 when soldered onto the external lead terminal mounting portion 2. It can have the function of suppressing the rise.
[発明の効果]
以上詳細に説明したように、本発明によれば、外部リー
ド端子は先端をセラミック基板上の外部リード端子取付
部にいわばバット接続されるので、この外部リード端子
取付部の所要長を短く設定することができる。また回路
基板に実装する際のリード長の冗長化を解決することが
できるので、パッケージの内部配線から回路基板に至る
配線長を最短長に設定して配線間容量および配線インダ
クタンスの低減化を容易に図ることができる。すなわち
、パッケージ内部配線から実装回路基板に至る配線のイ
ンダクタンスLおよび配線間容量Cをそれぞれ低減して
対向配線間共振周波数f。を高め得るので、回路基板と
の間の整合性を容易に図り得る半導体装置を供給するこ
とが可能である。[Effects of the Invention] As described above in detail, according to the present invention, the tips of the external lead terminals are butt-connected to the external lead terminal mounting portions on the ceramic substrate. The length can be set short. It also solves the issue of redundant lead lengths when mounting on a circuit board, making it easy to set the wiring length from the internal wiring of the package to the circuit board to the shortest length to reduce inter-wiring capacitance and wiring inductance. can be achieved. That is, by reducing the inductance L and inter-wiring capacitance C of the wiring from the package internal wiring to the mounted circuit board, the resonant frequency f between opposing wirings is achieved. Therefore, it is possible to provide a semiconductor device that can easily achieve compatibility with a circuit board.
第1図および第2図はそれぞれ本発明の一実施例を示す
セラミック・パッケージの斜視図およびその外部リード
端子取付部の拡大構造図、第3図は上記実施例半導体装
置の回路基板上への実装状態図、第4図および第5図は
それぞれ本発明の他の実施例を示す外部リード端子取付
部の斜視構造図およびそのリード端子の加工成型図、第
6図および第7図はそれぞれ従来の高周波半導体装置に
おけるセラミック・パッケージの外部リード端子取付部
の拡大構造図である。
1・・・セラミック基板、
2−・−外部リード端子取付部、
3・・・外部リード端子、
4・・・セラミック枠体、
5・・・金属ロー材、 6・・・回路基板、7・・
・(外部リード端子の)短辺部、8・・−ハーフエツチ
ング溝。FIGS. 1 and 2 are a perspective view of a ceramic package and an enlarged structural view of the external lead terminal mounting portion of the ceramic package showing an embodiment of the present invention, respectively, and FIG. The mounting state diagram, FIGS. 4 and 5 are respectively a perspective structural diagram of an external lead terminal attachment part and a processed molding diagram of the lead terminal, respectively showing another embodiment of the present invention, and FIGS. 6 and 7 are respectively a conventional one. FIG. 2 is an enlarged structural diagram of an external lead terminal mounting portion of a ceramic package in a high-frequency semiconductor device. DESCRIPTION OF SYMBOLS 1... Ceramic board, 2-- External lead terminal attachment part, 3... External lead terminal, 4... Ceramic frame, 5... Metal brazing material, 6... Circuit board, 7...・
・Short side (of external lead terminal), 8...-half etching groove.
Claims (1)
ミック・パッケージ構造の半導体装置において、前記外
部リード端子をL型形状に成型するとともにその一方の
先端を前記セラミック基板上の外部リード端子取付部の
面上に突き当てるようにロー接着することを特徴とする
半導体装置。In a semiconductor device having a ceramic package structure in which external lead terminals are disposed on the outer edge of a ceramic substrate, the external lead terminals are formed into an L shape, and one end thereof is attached to the surface of the external lead terminal mounting portion on the ceramic substrate. A semiconductor device characterized by low adhesive bonding so as to abut against the top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4608290A JPH03248452A (en) | 1990-02-26 | 1990-02-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4608290A JPH03248452A (en) | 1990-02-26 | 1990-02-26 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03248452A true JPH03248452A (en) | 1991-11-06 |
Family
ID=12737067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4608290A Pending JPH03248452A (en) | 1990-02-26 | 1990-02-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03248452A (en) |
-
1990
- 1990-02-26 JP JP4608290A patent/JPH03248452A/en active Pending
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