JPH03250757A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH03250757A JPH03250757A JP2047888A JP4788890A JPH03250757A JP H03250757 A JPH03250757 A JP H03250757A JP 2047888 A JP2047888 A JP 2047888A JP 4788890 A JP4788890 A JP 4788890A JP H03250757 A JPH03250757 A JP H03250757A
- Authority
- JP
- Japan
- Prior art keywords
- input
- output terminal
- package
- packages
- output terminals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置、特にパンケージを積層するだめの
構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a structure for stacking pancages.
従来より携帯電話、小型ハンディ、OA@器などのよう
に使い勝手、デザインの点から、これ等に組込む半導体
素子の高密度化が要求されている。BACKGROUND OF THE INVENTION There has been a demand for higher density semiconductor elements to be incorporated into mobile phones, small handheld devices, office automation equipment, etc. from the viewpoint of ease of use and design.
第5図は高密度化を図った従来の半導体装置の一例を示
す側面図であり、同図において、Bは実装基板であり、
その上に、図示しない半導体素子を収納するパッケージ
Pを多段に積層化している。FIG. 5 is a side view showing an example of a conventional semiconductor device with high density, and in the same figure, B is a mounting board;
On top of that, packages P that house semiconductor elements (not shown) are stacked in multiple stages.
この場合、各パッケージPの外周には、先端がパッケー
ジPの表面及び裏面方向に延長する入出力端子Tを設け
、積層時に上下の入出力端子T、 Tを対接させ、かつ
半田付けしている。In this case, an input/output terminal T is provided on the outer periphery of each package P, the tip of which extends toward the front and back surfaces of the package P, and the upper and lower input/output terminals T and T are brought into contact with each other during stacking and are soldered. There is.
しかしながら、従来の半導体装置によれば、半田付は時
に上、下のパンケージ間に位置づれが生じ易く、半田付
は時の位置決めが面倒となり、しかも半田のみにより上
、下のパッケージ間の接続がなされているので、パッケ
ージ間の接続強度が十分でないという欠点を有している
。However, according to conventional semiconductor devices, soldering tends to cause misalignment between the upper and lower package, making positioning difficult when soldering, and the connection between the upper and lower packages is made only by soldering. However, this method has the disadvantage that the connection strength between the packages is not sufficient.
この発明は上記のような問題点を解消するためになされ
たもので、上、下のパッケージの位置決めが正確で、し
かも接続強度が高い半導体装置を提供するものである。The present invention was made to solve the above-mentioned problems, and provides a semiconductor device in which the upper and lower packages are accurately positioned and the connection strength is high.
下段のパッケージの入出力端子の上端に設けた嵌着部に
、上段のパッケージの入出力端子の下端を嵌着する。The lower end of the input/output terminal of the upper package is fitted into the fitting part provided at the upper end of the input/output terminal of the lower package.
下段のパッケージの入出力端子の上端に、上段のパンケ
ージの入出力端子の下端が嵌着されて位置決めされて、
左右3前後方向の移動が阻止される。The lower end of the input/output terminal of the upper pancage is fitted and positioned on the upper end of the input/output terminal of the lower package.
Movement in left and right three front and back directions is blocked.
第1図ないし第4図は本発明による半導体装置の一実施
例を示す断面図及び平面図であり、各図において、Rは
下段パッケージ、Pは上段パンケージ、Qは中段パッケ
ージであり、それぞれ長方形の底板1aとこの底板1a
の外周に設けた側枠1bとから成る金属容器1を有する
。上段パッケージPは、底板1aが上向きとなり、中段
、下段パンケージQ、 Rは底板1aが下向きとなって
いる。第4図に示す如く、各パッケージP、 Q、 R
の底板1aの表面中央に半導体素子5が設けられ、その
左、右端にセラミック部材2が位置され、各セラミック
部材2の同一位置に、円柱状の高周波用入出力端子3a
、3b、3cが上、下方向に延長する如く植設される。1 to 4 are a sectional view and a plan view showing an embodiment of a semiconductor device according to the present invention. In each figure, R is a lower package, P is an upper pancake, and Q is a middle package, each of which is rectangular. The bottom plate 1a of this and the bottom plate 1a of
It has a metal container 1 consisting of a side frame 1b provided on the outer periphery of the metal container 1. The upper package P has its bottom plate 1a facing upward, and the middle and lower pancakes Q and R have their bottom plates 1a facing downward. As shown in Figure 4, each package P, Q, R
A semiconductor element 5 is provided at the center of the surface of the bottom plate 1a, and ceramic members 2 are located at the left and right ends of the semiconductor element 5. At the same position of each ceramic member 2, a cylindrical high frequency input/output terminal 3a is provided.
, 3b and 3c are planted so as to extend upward and downward.
なお、入出力端子3a3b、3cの上端は各パッケージ
表面より露出し、かつ入出力端子3a、3b、3cの下
端は窓部mを介して下部方向に突出している。The upper ends of the input/output terminals 3a, 3b, 3c are exposed from the surface of each package, and the lower ends of the input/output terminals 3a, 3b, 3c protrude downward through the window m.
また、入出力端子3b、3cの上端には穴lが設けられ
て嵌着部となり、入出力端子3a、3bの下端は、この
穴lに嵌入する如く小径に成形されている。各入出力端
子3a、3b、3cは、リドn及びボンディングワイヤ
tを介して半導体素子5に接続される。6は各バ・7ケ
ージP、 QRの開口部を寒く平板状のシールキャップ
である。Further, a hole 1 is provided at the upper end of the input/output terminals 3b, 3c to serve as a fitting portion, and the lower end of the input/output terminal 3a, 3b is formed to have a small diameter so as to fit into the hole 1. Each input/output terminal 3a, 3b, 3c is connected to the semiconductor element 5 via a lead n and a bonding wire t. 6 is a flat sealing cap that seals the opening of each cage P and QR.
上記金属容器1はコバール製であり、また上記セラミッ
ク部材2は、金属容器1、入出力端子3との接合部分と
してワイヤボンド部を含む内部リード部をタングステン
あるいはモリブデンでメタライズした酸二ソケルメソキ
を施したもので、金属容器工とセラミック部材2と入出
力端子3との三者を活貝で固定してロウ付けしたもので
ある。The metal container 1 is made of Kovar, and the ceramic member 2 has an internal lead portion including a wire bond portion that connects the metal container 1 and the input/output terminals 3 with tungsten or molybdenum metallized with acid disochloride. The metal container, the ceramic member 2, and the input/output terminal 3 are fixed with live shellfish and brazed together.
入出力端子3a、3b、3cの特性インピーダンスは、
金属容器1をグランドとしてセラミック部材2で調整し
ている。特性インピーダンスZ0は次式で表され、グラ
ンド−誘電体−導体間の寸法、形状によって任意に設定
できる。The characteristic impedance of the input/output terminals 3a, 3b, and 3c is
Adjustments are made using the ceramic member 2 using the metal container 1 as a ground. The characteristic impedance Z0 is expressed by the following equation, and can be arbitrarily set depending on the dimensions and shape between the ground, the dielectric, and the conductor.
Zo =
■、 ・ C
(V pは伝搬速度で誘電体材質で決まり、Cは線路の
単位長さ当たりのキャパシタンスである。)このように
組立てたパッケージに半導体素子5をダイボンドした後
、シールキャップ6で封止している。Zo = ■, ・C (V p is the propagation speed determined by the dielectric material, and C is the capacitance per unit length of the line.) After die-bonding the semiconductor element 5 to the package assembled in this way, a seal cap is attached. It is sealed with 6.
シールキャップ6には上下段の相互の干渉をさけるため
必要に応じてフェライトなどの電波吸収体が用いられる
。上、中、下段パッケージP、 QRの積層による各パ
ッケージ間の電気的接続は入出力端子3b、3cに設け
た穴lに入出力端子3a、3bを挿入して半田接合によ
ってなされる。For the seal cap 6, a radio wave absorber such as ferrite is used as necessary to avoid mutual interference between the upper and lower stages. Electrical connections between the stacked upper, middle, and lower packages P and QR are made by soldering by inserting the input/output terminals 3a, 3b into the holes l provided in the input/output terminals 3b, 3c.
なお、通常の入出力端子4a、4b、4cは、第3図に
示すようにフランジ4mを有するもので、その上端をピ
アホール7の途中まで下から嵌入することにより植設さ
れ、入出力端子4a、4bの下端は接続穴9に嵌入し、
半田付けして接続される。The normal input/output terminals 4a, 4b, 4c have a flange 4m as shown in FIG. , the lower ends of 4b fit into the connection holes 9,
Connected by soldering.
上記入出力端子4a、4bの接続穴9となる部分はオー
ブンホールの状態で積層一体化、焼成により製作される
。The portions that will become the connection holes 9 of the input/output terminals 4a, 4b are manufactured by laminating and baking in an oven hole state.
なお、金属容器1、セラミック部材2の組立は実施例の
ロウ付げに限定されることなく他の接合方法でもなんら
さしつかえない。Incidentally, the assembly of the metal container 1 and the ceramic member 2 is not limited to the brazing of the embodiment, and any other joining method may be used.
以上の構成によれば、下段パッケージRの入出力端子3
この嵌着部としての穴l及び接続穴9に中段パッケージ
Qの入出力端子3b、4bの下端を嵌入しかつ半田付け
し、さらに中段パンケージQの入出力端子3bの嵌着部
としての穴β及び接続9に上段パッケージRの入出力端
子3a、4aの下端を嵌入しかつ半田付けし、さらに金
属容器1同志をロウ付けすることにより組立てが完成す
る。従って、入出力端子相互間の嵌着に基づき土中、下
段パッケージP、Q、Rが正確に位置決めされて動かな
いので、半田付は及びロウ付けが容易となり、かつ正確
な立体積層形状を確保できる。According to the above configuration, the input/output terminal 3 of the lower package R
The lower ends of the input/output terminals 3b, 4b of the middle package Q are fitted and soldered into the hole l and the connection hole 9, which serve as fitting parts, and the hole β serves as a fitting part for the input/output terminals 3b of the middle package Q. The lower ends of the input/output terminals 3a, 4a of the upper package R are fitted into the connections 9 and soldered, and the metal containers 1 are further brazed together to complete the assembly. Therefore, based on the fit between the input and output terminals, the lower packages P, Q, and R are accurately positioned in the ground and do not move, making soldering and brazing easier and ensuring an accurate three-dimensional stacked shape. can.
また、入出力端子相互間の嵌着力により外力が作用して
もパッケージ相互が容易に剥がれるおそれがない。しか
も本実施例によれば、ベース基板に金属容器1を用い、
高周波用入出力端子3a、3b、3cの特性インピーダ
ンスを調整し、シールキャップ6には必要に応じて電波
吸収体を用いたパッケージを積層による多段化ができる
構成にしたので、高周波素子の放熱、段間接続の信号損
失、相互干渉などの問題がなく、パンケージの実装面積
に対する高周波素子の収容率を向上させる効果がある。Further, even if an external force is applied due to the fitting force between the input and output terminals, there is no risk that the packages will easily peel off from each other. Moreover, according to this embodiment, the metal container 1 is used as the base substrate,
The characteristic impedance of the high-frequency input/output terminals 3a, 3b, and 3c is adjusted, and the seal cap 6 has a configuration that allows multi-stage stacking of packages using radio wave absorbers as necessary, so that the heat dissipation of the high-frequency element is improved. There are no problems such as signal loss or mutual interference due to interstage connections, and there is an effect of improving the accommodating ratio of high-frequency elements to the mounting area of the pancage.
なお、本発明においては中段パンケージQとしては省略
して2段重ねとしても、あるいは複数個設けて3段以上
重ねるようにしてもよい。In the present invention, the middle pancage Q may be omitted and stacked in two stages, or a plurality of them may be provided and stacked in three or more stages.
以上のように本発明によれば、下段バ・7ケージの入出
力端子の上端側に、上段パッケージの入出力端子の下端
を嵌着するように構成したので、半田付は等に際してパ
ッケージ相互の位置づれが発止せず、またパンケージ相
互間の接続強度を高めることができる。As described above, according to the present invention, the lower end of the input/output terminal of the upper package is fitted onto the upper end of the input/output terminal of the lower bar/7 cage, so that the packages can be connected to each other during soldering etc. Misalignment will not occur, and the connection strength between pan cages can be increased.
第1図ないし第4図は本発明による半導体装置の一実施
例を示す断面図及び平面図、第5図は従来の半導体装置
の一例を示す図である。
・・入出力端子、5・・・半導体素子、6・シールキャ
ップ、P、Q、R・・・上、中、下段パッケージ。1 to 4 are a sectional view and a plan view showing an embodiment of a semiconductor device according to the present invention, and FIG. 5 is a diagram showing an example of a conventional semiconductor device. ...Input/output terminal, 5. Semiconductor element, 6. Seal cap, P, Q, R... Upper, middle, lower package.
Claims (1)
ージ及び上段パッケージより成る半導体装置において、 上記上、下段パッケージに、上、下方向に延長する入出
力端子を設けるとともに、下段パッケージの入出力端子
は、その上端を下段パッケージの上面より露出させかつ
当該上端に、上記上段パッケージの入出力端子の下端を
嵌着する嵌着部を形成したことを特徴とする半導体装置
。[Scope of Claims] A semiconductor device containing a semiconductor element and comprising a lower package and an upper package stacked on each other, wherein the upper and lower packages are provided with input/output terminals extending upward and downward, and the lower package The input/output terminal has its upper end exposed from the upper surface of the lower package, and a fitting portion is formed at the upper end to fit the lower end of the input/output terminal of the upper package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2047888A JPH03250757A (en) | 1990-02-28 | 1990-02-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2047888A JPH03250757A (en) | 1990-02-28 | 1990-02-28 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03250757A true JPH03250757A (en) | 1991-11-08 |
Family
ID=12787940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2047888A Pending JPH03250757A (en) | 1990-02-28 | 1990-02-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03250757A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4303734A1 (en) * | 1993-02-03 | 1994-08-04 | Deutsches Elektronen Synchr | Chip carrier for surface mount devices |
| US5498902A (en) * | 1993-08-25 | 1996-03-12 | Seiko Epson Corporation | Semiconductor device and its manufacturing method |
| US5613033A (en) * | 1995-01-18 | 1997-03-18 | Dell Usa, Lp | Laminated module for stacking integrated circuits |
| DE19923523A1 (en) * | 1999-05-21 | 2000-11-30 | Siemens Ag | Semiconductor module with stacked chip package |
| JP2001015678A (en) * | 1999-06-29 | 2001-01-19 | Mitsubishi Electric Corp | High frequency module |
| JP2008277838A (en) * | 2008-05-21 | 2008-11-13 | Mitsubishi Electric Corp | High frequency module |
-
1990
- 1990-02-28 JP JP2047888A patent/JPH03250757A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4303734A1 (en) * | 1993-02-03 | 1994-08-04 | Deutsches Elektronen Synchr | Chip carrier for surface mount devices |
| US5498902A (en) * | 1993-08-25 | 1996-03-12 | Seiko Epson Corporation | Semiconductor device and its manufacturing method |
| US5613033A (en) * | 1995-01-18 | 1997-03-18 | Dell Usa, Lp | Laminated module for stacking integrated circuits |
| DE19923523A1 (en) * | 1999-05-21 | 2000-11-30 | Siemens Ag | Semiconductor module with stacked chip package |
| JP2001015678A (en) * | 1999-06-29 | 2001-01-19 | Mitsubishi Electric Corp | High frequency module |
| JP2008277838A (en) * | 2008-05-21 | 2008-11-13 | Mitsubishi Electric Corp | High frequency module |
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