JPH03255653A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPH03255653A JPH03255653A JP2054120A JP5412090A JPH03255653A JP H03255653 A JPH03255653 A JP H03255653A JP 2054120 A JP2054120 A JP 2054120A JP 5412090 A JP5412090 A JP 5412090A JP H03255653 A JPH03255653 A JP H03255653A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- outer frame
- lead
- island
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はリードフレームに関し、特に樹脂封止型の半導
体装置の外部リード付は組立に使用されるリードフレー
ムに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lead frame, and particularly relates to a lead frame used for assembling resin-sealed semiconductor devices with external leads.
従来、この種のリードフレームは、第２図に示す如く、
一般に、半導体チップ、或いは、混成集積回路基板等を
搭載するアイランド部１は、吊りピン２によってリード
フレーム外枠４に支持され、又、アイランド部１の周囲
を囲むように配置された一群の外部取出し端子３もリー
ドフレーム外枠４に接続されるように構成され、適当な
金属板からエツチング法、又は、プレス等により作り出
され、通常はこれに貴金属の鍍金が施されている。Conventionally, this type of lead frame, as shown in Figure 2,
Generally, an island section 1 on which a semiconductor chip, a hybrid integrated circuit board, etc. is mounted is supported by a lead frame outer frame 4 by hanging pins 2, and a group of external parts arranged to surround the periphery of the island section 1. The lead terminal 3 is also configured to be connected to the lead frame outer frame 4, and is made from a suitable metal plate by etching or pressing, and is usually plated with a precious metal.
上述した従来のリードフレームは、その材料として４２
％Ｎｉ−Ｆｅ合金が使用されることが多いが、この場合
、アイランドのサイズが大きくなると、このアイランド
に接するモールド樹脂９回路基板、半導体チップ等との
熱膨張係数の差により、モールド樹脂外装の変形、或い
は、モールド樹脂のクラック等々の問題が発生する。The conventional lead frame described above uses 42% as its material.
%Ni-Fe alloy is often used, but in this case, as the size of the island increases, the difference in thermal expansion coefficient between the mold resin 9 and the circuit board, semiconductor chip, etc. that are in contact with the island causes the mold resin exterior to deteriorate. Problems such as deformation or cracks in the mold resin occur.
この熱膨張係数の差を小さくする為に、銅材を用いるこ
ともあるが、この場合は、銅材がばね性に欠ける為、外
部取出端子（即ち外部リード〉が変形し易いという欠点
を有する。In order to reduce this difference in thermal expansion coefficient, copper material is sometimes used, but in this case, the copper material lacks springiness, so it has the disadvantage that the external terminal (i.e., external lead) is easily deformed. .
本発明の目的は、モールド樹脂外装の変形やモールド樹
脂のクラックがなく、外部取出端子の変形の発生のない
リードフレームを提供することにある。An object of the present invention is to provide a lead frame in which there is no deformation of the molded resin exterior, no cracking of the molded resin, and no deformation of external lead terminals.
本発明は、素子を搭載するアイランド部と、該アイラン
ド部をリードフレーム外枠に支持する吊りピンと、前記
アイランド部を取り囲んで配置され且つ前記リーフレー
ム外枠に接続された一群の外部取出し端子とを有するリ
ードフレームに於て、前記アイランド部に銅材を用い、
前記吊りピン及び外部取出し端子及びリードフレーム外
枠に４２％Ｎｉ−Ｆｅ合金が用いられている。The present invention includes an island portion on which an element is mounted, a hanging pin that supports the island portion on a lead frame outer frame, and a group of external extraction terminals arranged surrounding the island portion and connected to the lead frame outer frame. In the lead frame having a copper material for the island portion,
A 42% Ni--Fe alloy is used for the hanging pins, external terminals, and outer frame of the lead frame.
次に、本発明の実施例に就いて図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例を示す平面図である。FIG. 1 is a plan view showing one embodiment of the present invention.
第１図に示すように、アイランド部１は銅材を用い、他
の部分、即ち、吊りピン２．外部取出端子３及びリード
フレーム外枠４は、４２％ＮｉＦｅ合金を用いてプレス
又はエツチング等により作り出された一体構造を戒して
いる。As shown in FIG. 1, the island part 1 is made of copper material, and the other parts, that is, the hanging pins 2. The external terminal 3 and the lead frame outer frame 4 have an integral structure made of 42% NiFe alloy by pressing or etching.
ここで、アイランド部ｌは吊りピン２の先端と重ね合せ
、此処を接続部５として溶接により接続されている。又
、溶接以外の方法による接続、例えば、鋼重性接着剤に
よる方法でも良いことは明らかである。Here, the island portion 1 is overlapped with the tip of the hanging pin 2, and is connected thereto by welding as a connecting portion 5. It is also obvious that connection methods other than welding, such as a method using a steel adhesive, may be used.
以上説明したように本発明は、素子を搭載するアイラン
ド部には、此処と密着するモールド樹脂９同路基板等と
の熱膨張係数の差が比較的小さい銅材を用い、其他の吊
りピン、外部取出端子。As explained above, the present invention uses copper material, which has a relatively small difference in coefficient of thermal expansion between this part and the molded resin 9 which is in close contact with the same circuit board, etc., for the island part on which the element is mounted, and other hanging pins, External output terminal.
リードフレーム外枠には、バネ性に優れる４２％Ｎｉ−
Ｆｅ合金を用いることにより、熱膨張係数の差によるモ
ールド樹脂のクラック、変形等の発生及び外部取出端子
の変形の発生を防止出来る効果がある。The outer frame of the lead frame is made of 42% Ni-, which has excellent spring properties.
The use of Fe alloy has the effect of preventing cracks and deformation of the mold resin and deformation of the external terminal due to differences in thermal expansion coefficients.
第１図は本発明の一実施例の平面図、第２図は従来のリ
ードフレームの一例の平面図である。
１・・・アイランド部、２・・・吊りピン、３・・・外
部取出端子、４・・・フレーム外枠、５・・・接続部。FIG. 1 is a plan view of an embodiment of the present invention, and FIG. 2 is a plan view of an example of a conventional lead frame. DESCRIPTION OF SYMBOLS 1... Island part, 2... Hanging pin, 3... External extraction terminal, 4... Frame outer frame, 5... Connection part.
Claims (1)
ードフレーム外枠に支持する吊りピンと、前記アイラン
ド部を取り囲んで配置され且つ前記リーフレーム外枠に
接続された一群の外部取出し端子とを有するリードフレ
ームに於て、前記アイランド部に銅材を用い、前記吊り
ピン及び外部取出し端子及びリードフレーム外枠に４２
％Ｎｉ−Ｆｅ合金を用いたことを特徴とするリードフレ
ーム。A lead frame having an island portion on which an element is mounted, a hanging pin that supports the island portion on a lead frame outer frame, and a group of external extraction terminals arranged surrounding the island portion and connected to the lead frame outer frame. In this case, a copper material is used for the island portion, and a 42mm
%Ni-Fe alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2054120A JPH03255653A (en) | 1990-03-05 | 1990-03-05 | Lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2054120A JPH03255653A (en) | 1990-03-05 | 1990-03-05 | Lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03255653A true JPH03255653A (en) | 1991-11-14 |
Family
ID=12961742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2054120A Pending JPH03255653A (en) | 1990-03-05 | 1990-03-05 | Lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03255653A (en) |
-
1990
- 1990-03-05 JP JP2054120A patent/JPH03255653A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100416815C (en) | Lead frame including passive devices and method of forming same | |
| JP2000188353A (en) | Ball grid array type semiconductor device and manufacturing method thereof | |
| JP2000294711A (en) | Lead frame | |
| JP4091050B2 (en) | Manufacturing method of semiconductor device | |
| US6541856B2 (en) | Thermally enhanced high density semiconductor package | |
| JPH0415947A (en) | Semiconductor device lead frame and semiconductor device | |
| JP2000223611A (en) | Lead frame for bga | |
| JPH03123063A (en) | Semiconductor device lead frame and manufacture thereof | |
| JPS61240644A (en) | Semiconductor device | |
| JPS6336699Y2 (en) | ||
| JPS62136056A (en) | Lead frame | |
| JPH03283648A (en) | Resin-sealed type semiconductor device | |
| JPS6077432A (en) | Manufacture of semiconductor device | |
| JP2561415Y2 (en) | Semiconductor device | |
| JPS59175753A (en) | Semiconductor device and lead frame | |
| JPH02139954A (en) | Lead frame and resin-sealed semiconductor device using same | |
| JPH0529427A (en) | Method for manufacturing semiconductor device | |
| JPS6064455A (en) | Semiconductor device | |
| JPS60244052A (en) | Lead frame for semiconductor device | |
| JPH02156559A (en) | Hybrid integrated circuit | |
| JPH0194643A (en) | Semiconductor device and manufacture thereof | |
| JPH09134929A (en) | METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, MOLDING DEVICE USED FOR THE SAME, LEAD FRAME, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME | |
| JPS62144343A (en) | Package for ic | |
| JPH01117350A (en) | Resin-sealed semiconductor device | |
| JPH02246143A (en) | Lead frame |