JPH0328069B2 - - Google Patents
Info
- Publication number
- JPH0328069B2 JPH0328069B2 JP56098557A JP9855781A JPH0328069B2 JP H0328069 B2 JPH0328069 B2 JP H0328069B2 JP 56098557 A JP56098557 A JP 56098557A JP 9855781 A JP9855781 A JP 9855781A JP H0328069 B2 JPH0328069 B2 JP H0328069B2
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- molybdenum
- semiconductor device
- wiring
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本発明は、半導体装置特に酸素雰囲気または空
気中に露出したモリブデンまたはタングステンの
如き金属のヒユーズ配線に選択的に電流を流して
加熱し、当該配線を酸化、昇華させてプログラミ
ングを行うプログラム可能な読出し専用記憶装置
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention involves selectively passing current through a fuse wiring of a semiconductor device, particularly a metal such as molybdenum or tungsten exposed in an oxygen atmosphere or air, to heat it and oxidize and sublimate the wiring. The present invention relates to a programmable read-only storage device that performs programming.
従来技術において、MOS記憶装置の冗長ビツ
トメモリ選定等にも応用されているプログラム可
能な読出し専用記憶装置（PROM）のプログラ
ミングは、多結晶シリコン（ポリシリコン）ヒユ
ーズ方式が多用されている。ところが、ポリシリ
コンヒユーズは切断の過程で抵抗が著しく減少す
るために、切断に必要とされる電力が大にならざ
るを得ない。しかも、どの程度の電流を流せばよ
いかが確定的でなく、再現性が悪く、またまわり
の部分が不要に加熱される。また、ポリシリコン
ヒユーズのかかる切断はそれの溶融によつてなさ
れるので、切断のときポリシリコン材料がまわり
に飛散して他の部品に付着し、短絡の原因になる
ばかりでなく著しく信類性を損う。 In the prior art, the polycrystalline silicon (polysilicon) fuse method is often used for programming programmable read-only memory (PROM), which is also applied to redundant bit memory selection of MOS storage devices. However, since the resistance of polysilicon fuses decreases significantly during the cutting process, the power required for cutting them inevitably increases. Moreover, it is not certain how much current should be passed, the reproducibility is poor, and surrounding parts are heated unnecessarily. In addition, since such cutting of a polysilicon fuse is done by melting it, the polysilicon material scatters around when cutting and adheres to other parts, which not only causes short circuits but also significantly reduces reliability. damage.
本発明の目的は従来技術において経験される前
記の欠点を解決するにあり、かかる目的を達成す
るについては、配線間に配設されてなるヒユーズ
の切断によりプログラム可能な半導体装置におい
て、該ヒユーズは昇華性酸化物形成金属材料で形
成され、酸化性雰囲気中で該ヒユーズに選択的に
電流を流し該ヒユーズを自己発熱で加熱し、該ヒ
ユーズの少くとも一部を酸化し昇華させて該ヒユ
ーズを切断するように構成されてなることを特徴
とする半導体装置を提供する。すなわち、従来技
術のヒユーズ式におけるポリシリコンに代えてモ
リブデンまたはタングステンの如き金属材料のヒ
ユーズ配線を用意し、このヒユーズ配線を酸素雰
囲気または空気中にさらし、ヒユーズ配線に選択
的に電流を流して加熱し、それを昇華させること
によりプログラミングをなすPROM装置を提供
する。 An object of the present invention is to solve the above-mentioned drawbacks experienced in the prior art, and in order to achieve the above object, a semiconductor device which can be programmed by cutting a fuse disposed between wirings, in which the fuse is The fuse is made of a sublimable oxide-forming metal material, and the fuse is heated by self-heating by selectively passing current through the fuse in an oxidizing atmosphere to oxidize and sublimate at least a portion of the fuse, thereby removing the fuse. A semiconductor device is provided that is configured to be cut. That is, instead of polysilicon in the conventional fuse method, a fuse wiring made of a metal material such as molybdenum or tungsten is prepared, the fuse wiring is exposed to an oxygen atmosphere or air, and a current is selectively passed through the fuse wiring to heat it. The present invention provides a PROM device that performs programming by sublimating it.
以下、本発明の半導体装置の実施例を添付図面
を参照して説明する。 Embodiments of the semiconductor device of the present invention will be described below with reference to the accompanying drawings.
本願の発明者は、従来のポリシリコンヒユーズ
を用いるPROMのプログラミングにおいて、ポ
リシリコンの溶融に大ななる電力を要する点を解
決すべく実験を重ね、次の事実を確認した。すな
わち、昇華性酸化物形成金属材料の一つであるモ
リブデンは、酸素雰囲気中または空気中でそれに
電流を流すと発熱し、酸素と反応してMoO2また
はMoO3の如き酸化物に変化して急激に昇華す
る。 The inventor of the present application conducted repeated experiments to solve the problem that a large amount of power is required to melt polysilicon in programming a PROM using a conventional polysilicon fuse, and confirmed the following fact. In other words, molybdenum, which is one of the sublimable oxide-forming metal materials, generates heat when an electric current is passed through it in an oxygen atmosphere or air, reacts with oxygen, and changes into oxides such as MoO 2 or MoO 3 . Sublimate rapidly.
ところで、モリブデンの昇華に必要な電力は、
モリブデンの膜厚が500Å、巾が2.5μｍの場合、
50ｍＷ（10V、５ｍＡ）、10μSのパルス電流で足り
ることが確認された。この電力はポリシリコンヒ
ユーズの場合に要求される電力の約半分である。 By the way, the power required to sublimate molybdenum is
When the molybdenum film thickness is 500 Å and the width is 2.5 μm,
It was confirmed that a pulse current of 50 mW (10 V, 5 mA) and 10 μS is sufficient. This power is approximately half the power required for polysilicon fuses.
他方、モリブデンの抵抗は、それを300℃の基
板上に蒸着した直後においては約１×10-4Ωcmで
ある。通常のモリブデンの使用（例えば配線）の
場合には、熱処理して抵抗１×10-5Ωcm程度にす
るのであるが、本発明においては、モリブデンの
蒸着直後においては抵抗が前述の如く大であるの
でそれを利用してモリブデンを昇華させるのであ
る。 On the other hand, the resistance of molybdenum is approximately 1×10 −4 Ωcm immediately after it is deposited on a substrate at 300° C. When molybdenum is normally used (for example, in wiring), it is heat-treated to reduce the resistance to about 1×10 -5 Ωcm, but in the present invention, the resistance is large as described above immediately after the molybdenum is vapor-deposited. Therefore, it is used to sublimate molybdenum.
添付した図面には本発明にかかるPROM構成
の一例が平面図で示され、同図において、１は選
択トランジスタ、２，２′，２″，２はアルミニ
ウム配線で、２はは接地線である。ビツト線ま
たはワード線であるアルミニウム配線２′と２″と
は斜線を付したモリブデンヒユーズ配線３で接続
されている。モリブデンヒユーズ配線３は、スパ
ツタリングまたは化学気相成長（CVD）法で形
成しうるが、本実施例の場合は前述した如く蒸着
によつて形成した。 The attached drawing shows a plan view of an example of the PROM configuration according to the present invention, in which 1 is a selection transistor, 2, 2', 2'', 2 are aluminum wiring, and 2 is a ground line. Aluminum wires 2' and 2'', which are bit lines or word lines, are connected by a molybdenum fuse wire 3 shown with diagonal lines. The molybdenum fuse wiring 3 can be formed by sputtering or chemical vapor deposition (CVD), but in this example it was formed by vapor deposition as described above.
モリブデンヒユーズ配線は300〜500Åの膜厚
に、また図示の巾Ｗは2.5μｍ、長さＬは10μｍに、
いいかえると、抵抗をもたせるために細く、薄く
かつ長く形成した。 The molybdenum fuse wiring has a film thickness of 300 to 500 Å, and the width W shown in the figure is 2.5 μm and the length L is 10 μm.
In other words, it is made thin, thin, and long to provide resistance.
ここで、モリブデンヒユーズ配線３に前記した
50ｍＷのパルス電流を10μSで選択的に流したと
ころ、モリブデンが加熱されると熱抵抗が増加
し、また昇華が始まるとその膜厚が薄くなり、抵
抗が増大し、それの切断が加速的に早められるこ
とが観察された。その結果、ポリシリコンヒユー
ズの場合に比べ約1/2の電力で足りるのである。 Here, the molybdenum fuse wiring 3 is
When a 50 mW pulse current was selectively passed for 10 μS, the thermal resistance increased as the molybdenum was heated, and when sublimation began, the film thickness became thinner, the resistance increased, and the cutting of it accelerated. It was observed that it was accelerated. As a result, it requires about half the power compared to polysilicon fuses.
モリブデンヒユーズ配線３が昇華することによ
つてアルミニウム配線２′と２″との間の接続が切
断されて図示のPROMのプログラミングがなさ
れる。モリブデンは完全に昇華するから、切断さ
れたところそのまわりは前と同じくきれいに保た
れ、ポリシリコンヒユーズの溶融切断のときに見
られる切断材料の飛散による短絡の危険と信頼性
の低下の如き問題は発生することがない。 By subliming the molybdenum fuse wire 3, the connection between the aluminum wires 2' and 2'' is broken, and programming of the PROM shown in the figure is performed.Molybdenum completely sublimes, so the area around the cut point is remains as clean as before, and problems such as the risk of short circuits and reduced reliability due to flying cutting material that occur when melt cutting polysilicon fuses do not occur.
図示の実施例の場合には、プログラミングが上
述の如く終了した後に電気特性などを点検し、し
かる後に保護膜を被着する。既に保護膜が被着さ
れているときには、切断場所すなわち昇華せしめ
られるべきモリブデンヒユーズ配線が存在すると
ころを空気にさらすために保護膜の窓開きをな
し、前記した操作を終えた後に、例えば保護膜を
溶融して窓をふさぐ。 In the illustrated embodiment, after programming is completed as described above, the electrical characteristics etc. are checked, and then a protective film is applied. If a protective film has already been applied, the protective film is opened to expose the cutting site, that is, the area where the molybdenum fuse wiring to be sublimed is present, to the air, and after the above operations are completed, e.g. melt it and seal the window.
かくして、本発明の半導体装置においては、モ
リブデンのヒユーズ配線に選択的に電流を流し、
モリブデンの自己発熱による酸化と昇華によつて
モリブデンヒユーズ配線を切断することにより
PROMのプログラミングをなすのであり、従来
のポリシリコンヒユーズ方式に比べ、消費電力は
約半分に節減されることから周辺回路素子の電流
容量等に対する要求が緩和されて書込み不良も減
少し、更には、モリブデンは昇華して消滅するか
ら、モリブデンヒユーズ配線の切断場所とそのま
わりにモリブデン材料が飛散つて、美観を低下し
短絡の危険を招来するというようなことがない。
かくして、本発明にかかる半導体装置において
は、その信頼性が高められるだけでなく、それの
製造における歩留りが改善されるものである。 Thus, in the semiconductor device of the present invention, current is selectively passed through the molybdenum fuse wiring.
By cutting the molybdenum fuse wiring through oxidation and sublimation due to self-heating of molybdenum.
It performs PROM programming, and compared to the conventional polysilicon fuse method, the power consumption is reduced by about half, which eases the requirements for the current capacity of peripheral circuit elements, reduces write failures, and furthermore, Since molybdenum sublimes and disappears, there is no possibility of molybdenum material being scattered at and around the cut point of the molybdenum fuse wiring, which would degrade the aesthetics and pose a risk of short circuit.
Thus, in the semiconductor device according to the present invention, not only its reliability is improved, but also the yield in its manufacturing is improved.
なお、以上の本発明の説明においてはモリブデ
ンを例にとつたが、本発明の適用範囲は本項の初
めの部分に述べた如くその場合に限定されるもの
でなく、タングステンの如きその他の昇華性酸化
物形成金属材料を用いる場合にも適用あるもので
ある。 In the above description of the present invention, molybdenum has been taken as an example, but the scope of application of the present invention is not limited to that case as stated at the beginning of this section, and may be applied to other sublimated materials such as tungsten. This method is also applicable to cases where a metallic oxide-forming metal material is used.
添付の図面は本発明の一実施例の平面図であ
る。
１……選択トランジスタ、２，２′，２″，２
……アルミニウム配線、３……モリブデンヒユー
ズ配線。
The accompanying drawings are plan views of one embodiment of the invention. 1...Selection transistor, 2, 2', 2'', 2
...Aluminum wiring, 3...Molybdenum fuse wiring.
Claims (1)
りプログラム可能な半導体装置において、 該ヒユーズは昇華性酸化物形成金属材料で形成
され、酸化性雰囲気中で該ヒユーズに選択的に電
流を流し該ヒユーズを自己発熱で加熱し、該ヒユ
ーズの少くとも一部を酸化し昇華させて該ヒユー
ズを切断するように構成されてなることを特徴と
する半導体装置。[Claims] 1. A semiconductor device that can be programmed by cutting a fuse disposed between wirings, wherein the fuse is formed of a sublimable oxide-forming metal material, and the fuse is selectively blown in an oxidizing atmosphere. 1. A semiconductor device, characterized in that the semiconductor device is configured to heat the fuse by self-heating by passing an electric current through it, oxidize and sublimate at least a portion of the fuse, and cut the fuse.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56098557A JPS58157A (en) | 1981-06-25 | 1981-06-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56098557A JPS58157A (en) | 1981-06-25 | 1981-06-25 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58157A JPS58157A (en) | 1983-01-05 |
| JPH0328069B2 true JPH0328069B2 (en) | 1991-04-17 |
Family
ID=14222986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56098557A Granted JPS58157A (en) | 1981-06-25 | 1981-06-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58157A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4924287A (en) * | 1985-01-20 | 1990-05-08 | Avner Pdahtzur | Personalizable CMOS gate array device and technique |
| US4792835A (en) * | 1986-12-05 | 1988-12-20 | Texas Instruments Incorporated | MOS programmable memories using a metal fuse link and process for making the same |
| US4826785A (en) * | 1987-01-27 | 1989-05-02 | Inmos Corporation | Metallic fuse with optically absorptive layer |
| IL82113A (en) * | 1987-04-05 | 1992-08-18 | Zvi Orbach | Fabrication of customized integrated circuits |
| CN101253573B (en) * | 2005-08-31 | 2012-04-18 | 国际商业机器公司 | Random access electrically programmable-E-FUSE ROM |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57139958A (en) * | 1981-02-23 | 1982-08-30 | Seiko Instr & Electronics Ltd | Fuse type non-volatile memory |
-
1981
- 1981-06-25 JP JP56098557A patent/JPS58157A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58157A (en) | 1983-01-05 |
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