JPH0329304A - Soft magnetic thin film and manufacture thereof - Google Patents
Soft magnetic thin film and manufacture thereofInfo
- Publication number
- JPH0329304A JPH0329304A JP16267289A JP16267289A JPH0329304A JP H0329304 A JPH0329304 A JP H0329304A JP 16267289 A JP16267289 A JP 16267289A JP 16267289 A JP16267289 A JP 16267289A JP H0329304 A JPH0329304 A JP H0329304A
- Authority
- JP
- Japan
- Prior art keywords
- soft magnetic
- alloy
- film
- thin film
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/132—Amorphous metallic alloys, e.g. glassy metals containing cobalt
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、例えば磁気ヘッドなどに用いられる軟磁性薄
膜に係り、特にコバルトを主体とするほとんどが非晶質
合金の軟磁性薄膜ならびにその製造方法に関するもので
ある.
[従来技術]
磁気ヘッド、高周波リアクトル用コアあるいは磁気シー
ルド材などに適用される軟磁性薄膜材料として、バーマ
ロイ、コバルト基非晶質合金、センダストなどが中心に
検討されている.特にCO−Tf合金膜あるいはCo−
Ta合金膜はスパッタリング法などによって形成すると
、非晶質状態となり、高い飽和磁束密度でかつ良好な軟
磁性特性を有することから有望視されている.しかし、
この軟磁性材料においても実用上問題がない訳ではなく
,特に熱的安定性の面では各種磁気素子の製造プロセス
上に様々な制約を生じる.すなわち、例えば磁気ヘッド
を製造する場合,磁気コアの間にガラスを介在させ、加
熱によりそのガラスを溶融させて磁気コアどうしを接合
する工程、あるいは磁気特性を向上させるため磁気コア
を磁界中で熱処理する工程は,例えば600℃程度の比
較的高温で行われる.そのためこれらの熱処理により前
記軟磁性薄膜の結晶化が進み、軟磁気特性が著しく劣化
するという問題がある.この対策として,前記磁気ヘッ
ドを製造する場合、低融点ガラスを使用することにより
プロセスの低温化を図る方法が採用されている.しかし
,低融点ガラスは磁気コアに比較して耐摩耗性に乏しく
、磁気記録媒体との摺接によりガラス層の方が先に摩耗
してしまい,ガラス層表面と磁気コア表面との間に段差
ができる.そしてこの段差の形成により、磁気記録媒体
の磁性層が損傷を受け、そのために磁気記録特性が劣化
してしまう.さらにこのGo−Ti合金膜あるいはCo
−Ta合金膜は他のCo基非晶質合金と同様に、飽和磁
束密度を高くするためにGoリッチにすると、軟磁性薄
膜の結晶化温度が著しく下がり、そのために熱処理の温
度が制限され、プロセスのマージンが狭められるという
問題がある.
そこでプロセスのマージンならびに磁気特性の両面から
,高い飽和磁束密度を保持し、かつ結晶化温度の高い材
料の開発が強く期待されている.このような期待に応え
る一つの方法として、既にGo−Nb−Zr−Ta非晶
質合金の窒化膜が提案されている(電子通信学会技術研
究報告 MR86−4,P25〜32rN,混合ガス中
でスパツタしたアモルファス合金膜の磁性」).その結
果,窒化により結晶化温度が高くなり、膜硬度も増し、
さらに特徴的な現象として. M.Takahashi
等が鉄窒化膜に見出したのと同様に(T.K.kima
nd M.Takahashi;Applied Ph
ysics Letters,vol.20, PP4
92, 1972>、Go−Nb−Z r−Ta非晶質
合金においても窒化により飽和磁束密度が増加する事が
見出された.
[発明が解決しようとする課題コ
しかしながらその反面、この膜では膜厚を300人以上
にすると著しく軟磁気特性が劣化することから、応用分
野への適用が困難視されている.
この対策として、非常に薄い窒化膜と非窒化膜とを交互
に積層し、磁気特性の劣化を防止することが試みられた
.この方法により軟磁気特性の劣化は防止できたが、極
めて薄い膜を多層に形威して所定の膜厚にすることが必
要である.前記窒化膜ならびに非窒化膜の膜厚が200
人の場合、例えば10μmの軟磁性薄膜を形或するため
には、窒化膜ならびに非窒化膜を500回繰り返して形
成する必要である.そのため、製造工程が非常に煩雑で
生産性ならびにコストの点で問題がアル.本発明は、こ
のような欠点を解消し、優れた軟磁気特性、熱安定性を
有する軟磁性膜ならびにその製造方法を提供することに
ある.
[課題を解決するための手段]
前記目的を達成するため,本発明は、コバルトを主体と
し、それにチタンならびにタンタルのグループから選択
された少なくとも1種の金属元素を添加した合金からな
り、それに窒素元素が混入していることを特徴とするも
のである.前記百的を達成するため,さらに本発明は、
コバルトを主体とし、それにチタンならびにタンタルの
グループから選択された少なくとも1種の金属元素を添
加した合金からなり、その合金を窒素ガスの存在下でス
パッタリングさせることにより、基体上に窒素元素を混
入した合金薄膜を形成したことを特徴とするものである
.
前記目的を達戒するため、さらに本発明は、コバルトを
主体にし、それにチタンならびにタンクルのグループか
ら選択された少なくとも1種の金属元素と,窒素元素と
が添加されているターゲットを用い、これをスパッタリ
ングさせることにより、基体上に窒素元素を混入した合
金薄膜を形成したことを特徴とするものである.
[作用]
Co−Ti合金膜あるいはCo−Ta合金膜などは、通
常、TiあるいはTaの添加率を15原子%程度以上に
すると非晶質化し良好な軟磁性膜となるが,本発明はこ
れら合金中に窒素を混入することにより、優れた軟磁気
特性を維持しながら熱的安定性を向上することがきるこ
とを見出した.すなわち、Go−Ti合金膜あるいはC
o−Ta合金膜といった非晶質合金膜では,結晶化温度
以上の温度に晒されると急速に結晶化が進行し、その軟
磁気特性が著しく劣化する.これに対して本発明のCo
−Ti,Co−Ta,Go−Ti−Ta,Co−Ti一
第3元素(後述) , Go −Ta一第3元素,Co
−Ti−Ta一第3元素窒化合金膜は,高温雰囲気に晒
されても結晶化の進行が遅く、一部が結晶化しても軟磁
気特性の劣化は非常に小さい.このような窒化による熱
安定性の向上についての理論的な根拠は明らかでないが
、窒素が母体の金属元素と強く結合して、結晶化の進行
を抑制していると考えられる.
本発明に係るCo−Ti,Go−Ta等の窒化合金膜の
製造方法としては、Co−Ti,Co−Ta等の合金を
窒素混入ガス雰囲気中でスパッタリングしてもよいし、
Co−Ti,Co−Ta等の窒化合金ターゲットをその
ままスパッタリングしてもよい.
またスパッタリング方法としては、イオンビームスパッ
タリング、高周波スパッタリング、直流スパッタリング
などが用いられ、特にイオンビームスパッタリングによ
って製造した軟磁性膜は、優れた磁気特性を有するため
賞用できる.[実施例]
本発明において使用される軟磁性材料は、Coを主体と
し.Taあるいは(および)Tiを所定量含有したCO
基合金で、さらに窒素が混入されている.この軟磁性薄
膜の結晶構造は,熱処理前はほぼ完全に非晶質状態であ
り,熱処理後は一部微結晶化しているが、ほとんど非晶
質状態である.なお,本発明の軟磁性薄膜における磁歪
定数を調整するため等に、例えばZr,Hf,Y,Nb
,Mo,Wなどの他の第3元素を少量添加することもで
きる.
COに対するTaあるいは(および)Tiの添加率は、
15〜307F子%(実施例では18原子%)が適当で
ある.
第1図は、本発明の実施例に用いるイオンビームスパッ
タリング装置の概略構或図である.同図において1は排
気管、2は二一ドルパルブ、3はイオン銃、4はターゲ
ット、5は基板、6は真空槽である.この真空槽6内を
I X 1 0”トール以下の高真空状態にした後、二
一ドルパルブ2よりアルゴンと窒素の混合ガスを槽内圧
力が3×10−’トールとなるように導入した.次にイ
オン#li!3より0.7 KVに加速したアルゴンイ
オンを,例えばCo@2Ti1m合金のターゲツト4に
照射し、それによって生じたスパッタリング微粒子を耐
熱ガラスからなる基板5上に膜厚7000人となるよう
に堆積させる.なお,薄膜形成におけるアルゴンイオン
照射電流は20mAとし、膜の堆積速度は20〜30人
/分とし、薄膜形或時には前記基板5に−40Vのバイ
アス電圧を印加した.そしてこのようにして形威した膜
を、500℃で約30分間磁界(400 0s)中で
熱処理した.
このようにして作威した窒化膜ならびに同一合金組威の
非窒化膜の,ai気特性(保磁力)をVSMにより測定
し、その結果を次の表に示した.表
また.各サンプルの結晶構造をX線回折(CuKα)に
より調べた結果、熱処理前のものはいずれもほぼ完全に
非晶質状態であった.熱処理後の窒化膜の方は一部微結
晶化しているがそのほとんどは非晶質状態にあるのに対
し,非窒化膜の方は結晶化がかなり進行していることが
分った.前記表から明らかなように、非窒化膜の場合は
約400℃で結晶化が開始するため、500℃の熱処理
では保磁力が急増(550倍)している.これに対して
本発明の窒化膜は、X線回折によれば一部結晶化してい
るものの,その進行は遅く、そのため高温の熱処理後に
おいても良好な軟磁気特性(保磁力は60倍増大で、非
窒化膜に比較すると約1/9に抑制されている)を有し
ている.なお、前記熱処理は磁界中で行ったが,磁界を
かけないで熱処理を行っても、同様の優れた軟磁気特性
が得られることが実験で確認されている.前記実施例で
はCo−Ti合金を用いたが、Co−Ta合金,Go−
Ti−Ta合金,Co−Ti一第3元素合金,Go−T
a一第3元素合金,Co−Ti−Ta一第3元素合金等
においても良好な軟磁気特性が得られる.
前記実施例ではCo−Ti合金をターゲットとして用い
,窒素ガスの存在下でスパッタリングを行ったが、例え
ばT i NあるいはTaN等の窒化物のペレットとC
o板との複合物をターゲットとして用い(形或される薄
膜中の合金組成は、Co板上のベレットの数によってv
4整することができる),これをそのままスパッタリン
グしても窒素を含んだCo基合金薄膜が得られる.
前記実施例ではイオンビームスパッタリング広により軟
磁性薄膜を形威したが,例えば高周波スパッタリング法
など他の方法でも軟磁性薄膜を形成することができる.
この薄膜形成技術のうち特にイオンビームスパッタリン
グ法によって形威された軟磁性薄膜は、優れた磁気特性
を有している.これの理論的な根拠は明らかでないが、
次のようなことが考えられる.すなわち、スパッタ雰囲
気中に窒素が存在していると、それがアルゴンプラズマ
中でイオン化される訳であるが,イオンビームスパッタ
リング法を採用すれば、プラズマがイオン銃の中にあり
、形成された膜が窒素イオンに晒されないから、膜中に
柱状組織のようなものが戒長しないことに起因している
と予測される.[発明の効果]
本発明は前述のような構成になっており、軟磁気特性な
らびに熱的安定性の両面を向上することができる.
また本発明によれば、5000〜8000人程度の比較
的膜厚の厚い単層膜においても良好な軟磁性膜を得るこ
とができ、従来提案されたように窒化膜と非窒化膜とを
多層に積層する必要がない.そのために、生産性の向上
ならびにコストの低減を図ることができる.[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a soft magnetic thin film used, for example, in a magnetic head, and in particular to a soft magnetic thin film made of a mostly amorphous alloy mainly composed of cobalt, and its production. It concerns the method. [Prior Art] Bermalloy, cobalt-based amorphous alloys, and sendust are being mainly studied as soft magnetic thin film materials for use in magnetic heads, high-frequency reactor cores, magnetic shielding materials, etc. Especially CO-Tf alloy film or Co-
When a Ta alloy film is formed by a sputtering method or the like, it becomes an amorphous state, has a high saturation magnetic flux density, and has good soft magnetic properties, so it is considered promising. but,
This soft magnetic material is not without practical problems, and there are various constraints on the manufacturing process of various magnetic elements, especially in terms of thermal stability. For example, when manufacturing a magnetic head, there is a process in which glass is interposed between the magnetic cores and the glass is melted by heating to join the magnetic cores together, or the magnetic cores are heat-treated in a magnetic field to improve their magnetic properties. This process is carried out at a relatively high temperature of, for example, 600°C. Therefore, there is a problem in that these heat treatments advance the crystallization of the soft magnetic thin film, resulting in a significant deterioration of the soft magnetic properties. As a countermeasure to this problem, when manufacturing the magnetic head, a method has been adopted in which low melting point glass is used to lower the process temperature. However, low-melting glass has poor abrasion resistance compared to the magnetic core, and the glass layer wears out first due to sliding contact with the magnetic recording medium, resulting in a step difference between the glass layer surface and the magnetic core surface. Can be done. The formation of this step damages the magnetic layer of the magnetic recording medium, thereby degrading the magnetic recording characteristics. Furthermore, this Go-Ti alloy film or Co
- Like other Co-based amorphous alloys, when the Ta alloy film is made Go-rich to increase the saturation magnetic flux density, the crystallization temperature of the soft magnetic thin film drops significantly, which limits the heat treatment temperature. The problem is that the process margin is narrowed. Therefore, there are strong expectations for the development of materials that maintain high saturation magnetic flux density and have high crystallization temperatures, both from the perspective of process margins and magnetic properties. As one method to meet these expectations, a nitride film of Go-Nb-Zr-Ta amorphous alloy has already been proposed (IEICE technical research report MR86-4, P25~32rN, in mixed gas). "Magnetism of sputtered amorphous alloy film"). As a result, nitriding increases the crystallization temperature and increases the film hardness.
Another characteristic phenomenon. M. Takahashi
(T.K. kima et al. found this in iron nitride films)
ndM. Applied Ph
ysics Letters, vol. 20, PP4
92, 1972>, it was found that the saturation magnetic flux density increased by nitriding also in Go-Nb-Z r-Ta amorphous alloy. [Problems to be Solved by the Invention] However, on the other hand, the soft magnetic properties of this film deteriorate significantly when the film thickness exceeds 300, making it difficult to apply it to the field of application. As a countermeasure to this problem, an attempt was made to alternately stack extremely thin nitride films and non-nitride films to prevent deterioration of the magnetic properties. Although this method prevented deterioration of the soft magnetic properties, it was necessary to form extremely thin films into multiple layers to achieve a desired film thickness. The thickness of the nitride film and non-nitride film is 200 mm.
In the case of humans, for example, in order to form a soft magnetic thin film of 10 μm, it is necessary to repeat the formation of nitride and non-nitride films 500 times. As a result, the manufacturing process is extremely complicated, leading to problems in terms of productivity and cost. The object of the present invention is to eliminate such drawbacks and provide a soft magnetic film having excellent soft magnetic properties and thermal stability, as well as a method for manufacturing the same. [Means for Solving the Problems] In order to achieve the above object, the present invention consists of an alloy mainly composed of cobalt and to which at least one metal element selected from the group of titanium and tantalum is added, and nitrogen is added to it. It is characterized by the fact that it contains elements. In order to achieve the above-mentioned objective, the present invention further includes:
An alloy consisting mainly of cobalt and at least one metal element selected from the group of titanium and tantalum added thereto, and by sputtering the alloy in the presence of nitrogen gas, the nitrogen element is mixed onto the substrate. It is characterized by the formation of an alloy thin film. In order to achieve the above object, the present invention further uses a target mainly composed of cobalt and to which at least one metal element selected from the group of titanium and tankles and nitrogen element is added. It is characterized by forming an alloy thin film containing nitrogen element on the substrate by sputtering. [Function] Normally, a Co-Ti alloy film or a Co-Ta alloy film becomes amorphous and becomes a good soft magnetic film when the addition rate of Ti or Ta is about 15 atomic % or more. We have discovered that by incorporating nitrogen into the alloy, it is possible to improve thermal stability while maintaining excellent soft magnetic properties. That is, Go-Ti alloy film or C
When an amorphous alloy film such as an o-Ta alloy film is exposed to a temperature higher than its crystallization temperature, crystallization progresses rapidly and its soft magnetic properties are significantly degraded. In contrast, the Co of the present invention
-Ti, Co-Ta, Go-Ti-Ta, Co-Ti-third element (described later), Go -Ta-third element, Co
-The Ti-Ta-third element nitride alloy film progresses slowly in crystallization even when exposed to a high temperature atmosphere, and even if a portion of it crystallizes, the deterioration of the soft magnetic properties is very small. Although the theoretical basis for this improvement in thermal stability due to nitridation is not clear, it is thought that nitrogen strongly bonds with the parent metal element and suppresses the progress of crystallization. As a method for producing a nitride alloy film such as Co-Ti or Go-Ta according to the present invention, an alloy such as Co-Ti or Co-Ta may be sputtered in a nitrogen-containing gas atmosphere, or
A nitride alloy target such as Co-Ti or Co-Ta may be sputtered as is. In addition, as sputtering methods, ion beam sputtering, radio frequency sputtering, DC sputtering, etc. are used. In particular, soft magnetic films manufactured by ion beam sputtering have excellent magnetic properties and are therefore useful. [Example] The soft magnetic material used in the present invention is mainly composed of Co. CO containing a predetermined amount of Ta or (and) Ti
Nitrogen is further mixed into the base alloy. The crystal structure of this soft magnetic thin film is almost completely amorphous before heat treatment, and after heat treatment it is mostly amorphous, although some parts become microcrystalline. In addition, in order to adjust the magnetostriction constant in the soft magnetic thin film of the present invention, for example, Zr, Hf, Y, Nb
It is also possible to add small amounts of other third elements such as , Mo, and W. The addition rate of Ta or (and) Ti to CO is:
A suitable value is 15 to 307 F atoms (18 atomic % in the example). FIG. 1 is a schematic diagram of an ion beam sputtering apparatus used in an embodiment of the present invention. In the figure, 1 is an exhaust pipe, 2 is a 21 dollar valve, 3 is an ion gun, 4 is a target, 5 is a substrate, and 6 is a vacuum chamber. After the inside of the vacuum chamber 6 was brought to a high vacuum state of less than I x 10 torr, a mixed gas of argon and nitrogen was introduced from the twenty-one dollar valve 2 so that the pressure inside the chamber was 3 x 10 torr. Next, argon ions accelerated to 0.7 KV from ion #li!3 are irradiated onto a target 4 made of, for example, a Co@2Ti1m alloy, and the resulting sputtered fine particles are spread onto a substrate 5 made of heat-resistant glass in a film thickness of 7000 mm. The argon ion irradiation current during thin film formation was 20 mA, the film deposition rate was 20 to 30 persons/min, and a bias voltage of -40 V was applied to the thin film form or to the substrate 5. The film formed in this way was then heat treated in a magnetic field (4000 s) at 500°C for about 30 minutes. (Coercive force) was measured by VSM, and the results are shown in the table below.In addition, as a result of examining the crystal structure of each sample by X-ray diffraction (CuKα), it was found that all of the samples before heat treatment were almost completely It was in an amorphous state.The nitride film after heat treatment was partially microcrystalline, but most of it was in an amorphous state, whereas the non-nitride film had progressed considerably in crystallization. As is clear from the above table, in the case of a non-nitride film, crystallization starts at about 400°C, so the coercive force increases rapidly (550 times) with heat treatment at 500°C. On the other hand, although the nitride film of the present invention is partially crystallized according to X-ray diffraction, the progress of crystallization is slow, so even after high-temperature heat treatment, it has good soft magnetic properties (coercive force is 60 times larger, The heat treatment was performed in a magnetic field, but the same excellent softness can be achieved even if the heat treatment is performed without applying a magnetic field. It has been confirmed through experiments that magnetic properties can be obtained.Although Co-Ti alloy was used in the above example, Co-Ta alloy, Go-
Ti-Ta alloy, Co-Ti-third element alloy, Go-T
Good soft magnetic properties can also be obtained in a-third element alloy, Co-Ti-Ta-third element alloy, etc. In the above example, a Co-Ti alloy was used as a target and sputtering was performed in the presence of nitrogen gas.
Using a composite with a Co plate as a target (the alloy composition in the formed thin film varies depending on the number of pellets on the Co plate)
Even if this is sputtered as it is, a Co-based alloy thin film containing nitrogen can be obtained. In the above embodiment, the soft magnetic thin film was formed by wide ion beam sputtering, but the soft magnetic thin film can also be formed by other methods such as high frequency sputtering.
Among these thin film formation techniques, soft magnetic thin films produced by ion beam sputtering have excellent magnetic properties. The theoretical basis for this is not clear, but
The following can be considered. In other words, if nitrogen exists in the sputtering atmosphere, it will be ionized in the argon plasma, but if the ion beam sputtering method is used, the plasma is inside the ion gun and the formed film will be ionized. It is predicted that this is due to the fact that something like a columnar structure does not form in the membrane because it is not exposed to nitrogen ions. [Effects of the Invention] The present invention is configured as described above, and can improve both soft magnetic properties and thermal stability. Furthermore, according to the present invention, it is possible to obtain a good soft magnetic film even in a relatively thick single layer film of about 5,000 to 8,000 layers. There is no need to stack the layers. Therefore, it is possible to improve productivity and reduce costs.
第1図は,本発明で用いられるイオンビームスパッタリ
ング装置の概略構威図である.第1図
1・・・・・・排気管、 2・・・・・・二一
ドルバルブ、3・・・・・・イオン銃、
4・・・・・・ターゲット、
5・・・・・・基板、
6・・・・・・真空槽.Figure 1 is a schematic diagram of the ion beam sputtering apparatus used in the present invention. Fig. 1 1...Exhaust pipe, 2...21 dollar valve, 3...Ion gun, 4...Target, 5... Substrate, 6... Vacuum chamber.
Claims (5)
タルのグループから選択された少なくとも1種の金属元
素を添加した合金からなり、それに窒素元素が混入して
いることを特徴とする軟磁性薄膜。(1) A soft magnetic thin film characterized in that it is made of an alloy mainly composed of cobalt and to which at least one metal element selected from the group of titanium and tantalum is added, and a nitrogen element is mixed therein.
のほとんどが非晶質状態であることを特徴とする軟磁性
薄膜。(2) The soft magnetic thin film according to claim (1), wherein most of the crystal structure of the alloy is in an amorphous state.
タルのグループから選択された少なくとも1種の金属元
素を添加した合金からなり、その合金を窒素ガスの存在
下でスパツタリングさせることにより、基体上に窒素元
素を混入した合金薄膜を形成したことを特徴とする軟磁
性薄膜の製造方法。(3) An alloy consisting of cobalt as a main ingredient and at least one metal element selected from the group of titanium and tantalum added thereto, and by sputtering the alloy in the presence of nitrogen gas, nitrogen elements are deposited on the substrate. 1. A method for producing a soft magnetic thin film, characterized by forming an alloy thin film mixed with.
タルのグループから選択された少なくとも1種の金属元
素と、窒素元素とが添加されているターゲツトを用い、
これをスパツタリングさせることにより、基体上に窒素
元素を混入した合金薄膜を形成したことを特徴とする軟
磁性薄膜の製造方法。(4) Using a target mainly composed of cobalt and to which at least one metal element selected from the group of titanium and tantalum and a nitrogen element are added,
A method for producing a soft magnetic thin film, characterized in that an alloy thin film containing nitrogen element is formed on a substrate by sputtering the alloy.
前記スパツタリングが、加速されイオンビームをターゲ
ツトに照射して微粒子を発生するイオンビームスパツタ
リングであることを特徴とする軟磁性薄膜の製造方法。(5) In claim (3) or claim (4),
A method for producing a soft magnetic thin film, characterized in that the sputtering is ion beam sputtering in which a target is irradiated with an accelerated ion beam to generate fine particles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16267289A JPH0329304A (en) | 1989-06-27 | 1989-06-27 | Soft magnetic thin film and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16267289A JPH0329304A (en) | 1989-06-27 | 1989-06-27 | Soft magnetic thin film and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0329304A true JPH0329304A (en) | 1991-02-07 |
Family
ID=15759095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16267289A Pending JPH0329304A (en) | 1989-06-27 | 1989-06-27 | Soft magnetic thin film and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0329304A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG106659A1 (en) * | 2001-05-31 | 2004-10-29 | Ibm | Method of making a spin valve sensor with a free layer structure sputter deposited in a nitrogen atmosphere |
-
1989
- 1989-06-27 JP JP16267289A patent/JPH0329304A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG106659A1 (en) * | 2001-05-31 | 2004-10-29 | Ibm | Method of making a spin valve sensor with a free layer structure sputter deposited in a nitrogen atmosphere |
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