JPH0332853B2 - - Google Patents

Info

Publication number
JPH0332853B2
JPH0332853B2 JP57096575A JP9657582A JPH0332853B2 JP H0332853 B2 JPH0332853 B2 JP H0332853B2 JP 57096575 A JP57096575 A JP 57096575A JP 9657582 A JP9657582 A JP 9657582A JP H0332853 B2 JPH0332853 B2 JP H0332853B2
Authority
JP
Japan
Prior art keywords
wafer
mounting
disk
chamber
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57096575A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58214260A (ja
Inventor
Isamu Sakamoto
Koji Matsuda
Susumu Yamada
Masahiko Aoki
Tsukasa Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin High Voltage Co Ltd
Original Assignee
Nissin High Voltage Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin High Voltage Co Ltd filed Critical Nissin High Voltage Co Ltd
Priority to JP57096575A priority Critical patent/JPS58214260A/ja
Publication of JPS58214260A publication Critical patent/JPS58214260A/ja
Publication of JPH0332853B2 publication Critical patent/JPH0332853B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
JP57096575A 1982-06-04 1982-06-04 イオン注入装置 Granted JPS58214260A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57096575A JPS58214260A (ja) 1982-06-04 1982-06-04 イオン注入装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57096575A JPS58214260A (ja) 1982-06-04 1982-06-04 イオン注入装置

Publications (2)

Publication Number Publication Date
JPS58214260A JPS58214260A (ja) 1983-12-13
JPH0332853B2 true JPH0332853B2 (de) 1991-05-15

Family

ID=14168776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57096575A Granted JPS58214260A (ja) 1982-06-04 1982-06-04 イオン注入装置

Country Status (1)

Country Link
JP (1) JPS58214260A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4759681A (en) * 1985-01-22 1988-07-26 Nissin Electric Co. Ltd. End station for an ion implantation apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5841573U (ja) * 1981-09-11 1983-03-18 株式会社日立製作所 ウエ−ハ自動交換装置

Also Published As

Publication number Publication date
JPS58214260A (ja) 1983-12-13

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