JPH033342A - Resin mold type semiconductor device - Google Patents

Resin mold type semiconductor device

Info

Publication number
JPH033342A
JPH033342A JP1138704A JP13870489A JPH033342A JP H033342 A JPH033342 A JP H033342A JP 1138704 A JP1138704 A JP 1138704A JP 13870489 A JP13870489 A JP 13870489A JP H033342 A JPH033342 A JP H033342A
Authority
JP
Japan
Prior art keywords
semiconductor device
resin
electrode pad
bonding
element chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1138704A
Other languages
Japanese (ja)
Inventor
Shunichi Mizumachi
水町　俊一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP1138704A priority Critical patent/JPH033342A/en
Publication of JPH033342A publication Critical patent/JPH033342A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は耐湿性を改善した樹脂モールド型半導体装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resin molded semiconductor device with improved moisture resistance.

〔従来の技術〕[Conventional technology]

従来、樹脂モールド型半導体装置は、第２図（ａ）に平
面図を、第２図（ｂ）にそのＢ−Ｂ線断面図をそれぞれ
示すように、リードフレーム１のアイランド２に半導体
素子チップ４を搭載し、その電極パッド５とリード３と
をボンディングワイヤ６で相互に電気接続している。そ
して、アイランド２．半導体素子チップ４．ボンディン
グワイヤ６、リード３の一部を樹脂７によってモールド
封止している。Conventionally, a resin molded semiconductor device has a semiconductor element chip mounted on an island 2 of a lead frame 1, as shown in a plan view in FIG. 4 is mounted, and its electrode pads 5 and leads 3 are electrically connected to each other by bonding wires 6. And Island 2. Semiconductor element chip 4. A part of the bonding wire 6 and the lead 3 is molded and sealed with a resin 7.

この場合、半導体素子チップ４においては、電気的な接
続が不必要な電極バッド５ａにはボンディングワイヤ６
を接続してはいない。In this case, in the semiconductor element chip 4, the bonding wire 6 is attached to the electrode pad 5a that does not require electrical connection.
is not connected.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の樹脂モールド型半導体装置は、半導体素
子チップ４における電気的な接続を行わない電極パッド
５ａにはボンディングワイヤ６を接続していないため、
この電極バッド５ａの全面が露呈されて樹脂７に接触さ
れる。このため、電極バッド５ａが樹脂７に直接密着す
る面積が大きくなり、樹脂７の粒子の隙間より浸入した
水等の不純物により電極バッド５ａやこれに繋がる半導
体素子チップ４の内部配線が腐蝕してしまうという問題
がある。In the conventional resin molded semiconductor device described above, the bonding wire 6 is not connected to the electrode pad 5a that is not electrically connected to the semiconductor element chip 4.
The entire surface of this electrode pad 5a is exposed and brought into contact with the resin 7. For this reason, the area in which the electrode pad 5a is directly in close contact with the resin 7 becomes large, and impurities such as water that enter through the gaps between the particles of the resin 7 corrode the electrode pad 5a and the internal wiring of the semiconductor element chip 4 connected thereto. There is a problem with putting it away.

本発明はこのような問題を解消して耐湿性に優れた樹脂
モールド型半導体装置を提供することを目的とする。An object of the present invention is to solve such problems and provide a resin-molded semiconductor device with excellent moisture resistance.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置は、半導体素子チップにおいて、電
気接続が不要な電極パッドにボンディングボールを接続
している。In the semiconductor device of the present invention, bonding balls are connected to electrode pads that do not require electrical connection in the semiconductor element chip.

〔作用〕[Effect]

この構成では、ボンディングボールによって電極パッド
の表面が被覆され、樹脂との直接接触面積が低減され、
樹脂を通して浸入される水分による電極パッドの腐蝕を
防止する。In this configuration, the surface of the electrode pad is covered with the bonding ball, reducing the area of direct contact with the resin.
Prevents corrosion of the electrode pad due to moisture infiltrating through the resin.

〔実施例〕〔Example〕

次に、本発明を図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第１図（ａ）及び（ｂ）は本発明の一実施例の平面図及
びそのＡ−Ａ線に沿う断面図である。図において、１は
リードフレームであり、そのアイランド２には半導体素
子チップ４を搭載し、電極パッド５とリード３とをボン
ディングワイヤ６によって電気接続している。このとき
、リード３と電気的な接続が不要なバッド５ａには、ボ
ンディングワイヤ６のボール６ａのみをボンディングし
ている。FIGS. 1(a) and 1(b) are a plan view of an embodiment of the present invention and a cross-sectional view thereof taken along line A-A. In the figure, reference numeral 1 denotes a lead frame, on which an island 2 is mounted a semiconductor element chip 4, and electrode pads 5 and leads 3 are electrically connected by bonding wires 6. At this time, only the ball 6a of the bonding wire 6 is bonded to the pad 5a which does not require electrical connection to the lead 3.

この構成は、例えば電極パッド５ａにボンディングワイ
ヤ６をボールボンディングした後、ボール６ａのみを残
してボンディングワイヤ６を根本近傍部位で切断するこ
とにより構成できる。This structure can be constructed, for example, by ball-bonding the bonding wire 6 to the electrode pad 5a, and then cutting the bonding wire 6 near its root, leaving only the ball 6a.

しかる上で、半導体素子チップ４．ボンディングワイヤ
６４．リード３の一部を樹脂７によってモールド封止し
て半導体装置を完成している。After that, the semiconductor element chip 4. Bonding wire 64. A portion of the lead 3 is molded and sealed with resin 7 to complete the semiconductor device.

この構成によれば、リード３に対して電気接続が不要な
電極パッド５ａは、ボール６ａによってその大部分が被
覆されるため、樹脂７で封止したときにも電極パッド５
ａが樹脂７に直接接触される面積は極めて少なくなる。According to this configuration, since most of the electrode pad 5a that does not require electrical connection to the lead 3 is covered with the ball 6a, even when the electrode pad 5a is sealed with the resin 7, the electrode pad 5a does not need to be electrically connected to the lead 3.
The area where a directly contacts the resin 7 becomes extremely small.

このため、樹脂を通して浸入される水分等が電極パッド
５ａの表面に付着することは少なくなり、電極パッド５
ａ及びこれに繋がる内部配線の腐蝕を防止することがで
きる。For this reason, moisture, etc. that enter through the resin are less likely to adhere to the surface of the electrode pad 5a.
Corrosion of a and the internal wiring connected thereto can be prevented.

因みに、本発明者の実験によれば、次のような結果が得
られ、本発明の半導体装置の耐湿性が改善されることが
確認できた。Incidentally, according to the experiments conducted by the present inventors, the following results were obtained, and it was confirmed that the moisture resistance of the semiconductor device of the present invention was improved.

電気接続を行わない電極パッド５ａへの、ボール６・ａ
のボンディングの有無である。Ball 6・a to electrode pad 5a with no electrical connection
whether there is bonding or not.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、電気接続が不要な電極パ
ッドにボンディングボールを接続しているので、このボ
ンディングボールによって電極パッドの表面が被覆され
、樹脂との直接接触面積が低減され、樹脂の隙間より浸
入した水等の不純物によりパッドが腐蝕することを防ぐ
効果がある。As explained above, in the present invention, a bonding ball is connected to an electrode pad that does not require electrical connection, so the surface of the electrode pad is covered with the bonding ball, reducing the area of direct contact with the resin, and reducing the amount of resin. This has the effect of preventing the pad from corroding due to impurities such as water entering through the gaps.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を示し、同図（ａ）は平面図
、同図（ｂ）はそのＡ−Ａ線に沿う断面図、第２図は従
来の半導体装置を示し、同図（ａ）は平面図、同図（ｂ
）はそのＢ−Ｂ線に沿う断面図である。 １・・・リードフレーム、２・・・アイランド、３・・
・リード、４・・・半導体素子チップ、５．５ａ・・・
電極パッド、６・・・ボンディングワイヤ、６ａ・・・
ボール、なお、ボンディング条件の「有り」　「無し」
は、第１ 図 （ｂ） 第２ 図 （ａ） （ｂ）FIG. 1 shows an embodiment of the present invention, FIG. 1(a) is a plan view, FIG. 1(b) is a sectional view taken along the line A-A, and FIG. Figure (a) is a plan view, figure (b)
) is a sectional view taken along the line BB. 1...Lead frame, 2...Island, 3...
・Lead, 4...Semiconductor element chip, 5.5a...
Electrode pad, 6... Bonding wire, 6a...
Ball, bonding condition "Yes""No"
Figure 1 (b) Figure 2 (a) (b)

Claims (1)

【特許請求の範囲】[Claims] １、半導体素子チップの選択された電極パッドをボンデ
ィングワイヤによりリードに電気接続し、かつ樹脂によ
りモールド封止してなる半導体装置において、前記半導
体素子チップは、選択されずに電気接続が不要な電極パ
ッドにボンディングボールを接続したことを特徴とする
樹脂モールド型半導体装置。1. In a semiconductor device in which selected electrode pads of a semiconductor element chip are electrically connected to leads by bonding wires and molded and sealed with resin, the semiconductor element chip has electrodes that are not selected and do not require electrical connection. A resin molded semiconductor device characterized by a bonding ball connected to a pad.
JP1138704A 1989-05-31 1989-05-31 Resin mold type semiconductor device Pending JPH033342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1138704A JPH033342A (en) 1989-05-31 1989-05-31 Resin mold type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1138704A JPH033342A (en) 1989-05-31 1989-05-31 Resin mold type semiconductor device

Publications (1)

Publication Number Publication Date
JPH033342A true JPH033342A (en) 1991-01-09

Family

ID=15228176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1138704A Pending JPH033342A (en) 1989-05-31 1989-05-31 Resin mold type semiconductor device

Country Status (1)

Country Link
JP (1) JPH033342A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5697855A (en) * 1994-12-16 1997-12-16 Daiwa Seiko, Inc. Golf club head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5697855A (en) * 1994-12-16 1997-12-16 Daiwa Seiko, Inc. Golf club head

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