JPH0334065Y2 - - Google Patents

Info

Publication number
JPH0334065Y2
JPH0334065Y2 JP13891784U JP13891784U JPH0334065Y2 JP H0334065 Y2 JPH0334065 Y2 JP H0334065Y2 JP 13891784 U JP13891784 U JP 13891784U JP 13891784 U JP13891784 U JP 13891784U JP H0334065 Y2 JPH0334065 Y2 JP H0334065Y2
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
bias
wire
connector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13891784U
Other languages
Japanese (ja)
Other versions
JPS6153947U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13891784U priority Critical patent/JPH0334065Y2/ja
Publication of JPS6153947U publication Critical patent/JPS6153947U/ja
Application granted granted Critical
Publication of JPH0334065Y2 publication Critical patent/JPH0334065Y2/ja
Expired legal-status Critical Current

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  • Waveguide Connection Structure (AREA)
  • Wire Bonding (AREA)
  • Microwave Amplifiers (AREA)

Description

【考案の詳細な説明】 〔考案の技術分野〕 この考案は、多極コネクタから半導体素子まで
のバイアス系の一部を、金またはアルミニウムの
ワイヤで接続し、このワイヤに電気ヒユーズの機
能を持たせたマイクロ波集積回路に関するもので
ある。
[Detailed description of the invention] [Technical field of the invention] This invention connects part of the bias system from the multi-pole connector to the semiconductor element with gold or aluminum wire, and gives this wire the function of an electric fuse. The present invention relates to microwave integrated circuits.

〔従来技術〕[Prior art]

従来この種の装置として、例えば第1図に示す
ものがあつた。図において、1はマイクロ波基
板、2はこの基板1に形成された導体パターン、
3は電界効果トランジスタ、4は上記基板1を筐
体5に実装、固定するためのキヤリア、5は筐
体、6はRF信号入出力用の同軸コネクタ、7は
上記電界効果トランジスタ3にバイアスを印加す
るための多極コネクタ、8はこの多極コネクタ7
と上記導体パターン2とを接続するリード線であ
る。
A conventional device of this type is one shown in FIG. 1, for example. In the figure, 1 is a microwave substrate, 2 is a conductor pattern formed on this substrate 1,
3 is a field effect transistor; 4 is a carrier for mounting and fixing the substrate 1 on the housing 5; 5 is the housing; 6 is a coaxial connector for RF signal input/output; and 7 is a bias for the field effect transistor 3. A multi-pole connector for applying voltage, 8 is this multi-pole connector 7
This is a lead wire that connects the conductor pattern 2 and the conductive pattern 2.

次に動作について説明する。多極コネクタ7か
らゲート用バイアス及びドレイン用バイアスが、
リード線8を経て、基板1上に形成された導体パ
ターン2のバイアス端子に供給され、電界効果ト
ランジスタのゲート端子およびドレイン端子にそ
れぞれ印加される。こうして電界効果トランジス
タを動作させることによつて、同軸コネクタ6a
より入力されたRF信号を増幅し、同軸コネクタ
6bより出力する。
Next, the operation will be explained. The gate bias and drain bias are connected from the multi-pole connector 7.
The voltage is supplied to the bias terminal of the conductor pattern 2 formed on the substrate 1 through the lead wire 8, and applied to the gate terminal and drain terminal of the field effect transistor, respectively. By operating the field effect transistor in this manner, the coaxial connector 6a
The input RF signal is amplified and output from the coaxial connector 6b.

従来のマイクロ波集積回路は以上のように構成
されているので、外部から規定値以上のバイアス
が多極コネクタに供給されると、それがそのまゝ
電界効果トランジスタに印加され、破損もしくは
劣化を生ずるという欠点があつた。
Conventional microwave integrated circuits are configured as described above, so if a bias higher than the specified value is supplied from the outside to the multipole connector, it is directly applied to the field effect transistor, causing damage or deterioration. There was a drawback that this occurred.

〔考案の概要〕[Summary of the idea]

この考案は上記のような従来のものの欠点を除
去するためになされたもので、リード線の代りに
金又はアルミニウムのワイヤで接続することによ
り、規定値以上のバイアス入力に対し電界効果ト
ランジスタを保護することができるマイクロ波集
積回路を提供するものである。
This idea was made to eliminate the drawbacks of the conventional ones as mentioned above, and by connecting with gold or aluminum wires instead of lead wires, it protects the field effect transistor from bias input exceeding the specified value. The present invention provides a microwave integrated circuit capable of

〔考案の実施例〕[Example of idea]

以下、この考案の一実施例を図について説明す
る。第2図において、第1図と同一符号のものは
同一又は相当部分を示す。
An embodiment of this invention will be described below with reference to the drawings. In FIG. 2, the same reference numerals as in FIG. 1 indicate the same or corresponding parts.

8は金ワイヤである。 8 is a gold wire.

次に動作について説明する。動作は従来のもの
と同じであるが、外部から規定値以上のバイアス
が多極コネクタに供給された場合、金ワイヤが溶
融しバイアス回路は開放となる。即ち、金ワイヤ
が電気ヒユーズと同じ役目をすることによつて、
電界効果トランジスタを保護できるものである。
Next, the operation will be explained. The operation is the same as the conventional one, but when a bias higher than a specified value is supplied from the outside to the multi-pole connector, the gold wire melts and the bias circuit becomes open. That is, by the gold wire acting as an electric fuse,
It can protect field effect transistors.

なお、上記実施例では多極コネクタと導体パタ
ーンとを金ワイヤを用いて接続した場合について
説明したが、アルミニウムあるいは他の金属のワ
イヤでもよく、上記実施例と同様の効果を奏す
る。
Incidentally, in the above embodiment, a case has been described in which the multipolar connector and the conductor pattern are connected using gold wire, but aluminum or other metal wire may also be used, and the same effects as in the above embodiment can be obtained.

〔考案の効果〕[Effect of idea]

以上のように、この考案によれば多極コネクタ
から半導体素子に到るバイアス系の一部を金又は
アルミニウムのワイヤで接続し、このワイヤに電
気ヒユーズの役目をも持たせるようにしたので、
構成が簡単で、しかも安価な保護機能を備えたマ
イクロ波集積回路を提供することができる効果を
有する。
As described above, according to this invention, a part of the bias system from the multi-pole connector to the semiconductor element is connected with gold or aluminum wire, and this wire also has the role of an electric fuse.
This has the effect of providing a microwave integrated circuit with a simple configuration and inexpensive protection function.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のマイクロ波集積回路の外観図、
第2図はこの考案の一実施例によるマイクロ波集
積回路の外観図である。 1……基板、2……導体パターン、3……電界
効果トランジスタ、4……キヤリア、5……筐
体、6……同軸コネクタ、7……多極コネクタ、
8……金ワイヤ。なお、図中、同一符号は同一、
又は相当部分を示す。
Figure 1 is an external view of a conventional microwave integrated circuit.
FIG. 2 is an external view of a microwave integrated circuit according to an embodiment of this invention. DESCRIPTION OF SYMBOLS 1... Board, 2... Conductor pattern, 3... Field effect transistor, 4... Carrier, 5... Housing, 6... Coaxial connector, 7... Multipolar connector,
8...Gold wire. In addition, in the figure, the same reference numerals are the same,
or a corresponding portion.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電界効果トランジスタを含む電子部品が内蔵さ
れたマイクロ波集積回路において、その外部コネ
クタを介して上記電界効果トランジスタに内部接
続されるバイアス印加用リードを金ワイヤで形成
したことを特徴とするマイクロ波集積回路。
A microwave integrated circuit incorporating electronic components including a field effect transistor, characterized in that a bias application lead internally connected to the field effect transistor via an external connector is formed of a gold wire. circuit.
JP13891784U 1984-09-13 1984-09-13 Expired JPH0334065Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13891784U JPH0334065Y2 (en) 1984-09-13 1984-09-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13891784U JPH0334065Y2 (en) 1984-09-13 1984-09-13

Publications (2)

Publication Number Publication Date
JPS6153947U JPS6153947U (en) 1986-04-11
JPH0334065Y2 true JPH0334065Y2 (en) 1991-07-18

Family

ID=30697308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13891784U Expired JPH0334065Y2 (en) 1984-09-13 1984-09-13

Country Status (1)

Country Link
JP (1) JPH0334065Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA3105448A1 (en) 2018-07-03 2020-01-09 Elstar Therapeutics, Inc. Anti-tcr antibody molecules and uses thereof

Also Published As

Publication number Publication date
JPS6153947U (en) 1986-04-11

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