JPH033931B2 - - Google Patents

Info

Publication number
JPH033931B2
JPH033931B2 JP58202026A JP20202683A JPH033931B2 JP H033931 B2 JPH033931 B2 JP H033931B2 JP 58202026 A JP58202026 A JP 58202026A JP 20202683 A JP20202683 A JP 20202683A JP H033931 B2 JPH033931 B2 JP H033931B2
Authority
JP
Japan
Prior art keywords
glass
semiconductor device
coating
glass powder
dielectric constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58202026A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6094729A (ja
Inventor
Kazuo Hatano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Original Assignee
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Priority to JP58202026A priority Critical patent/JPS6094729A/ja
Publication of JPS6094729A publication Critical patent/JPS6094729A/ja
Publication of JPH033931B2 publication Critical patent/JPH033931B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)
JP58202026A 1983-10-27 1983-10-27 半導体装置のガラス被覆方法 Granted JPS6094729A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58202026A JPS6094729A (ja) 1983-10-27 1983-10-27 半導体装置のガラス被覆方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58202026A JPS6094729A (ja) 1983-10-27 1983-10-27 半導体装置のガラス被覆方法

Publications (2)

Publication Number Publication Date
JPS6094729A JPS6094729A (ja) 1985-05-27
JPH033931B2 true JPH033931B2 (fr) 1991-01-21

Family

ID=16450688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58202026A Granted JPS6094729A (ja) 1983-10-27 1983-10-27 半導体装置のガラス被覆方法

Country Status (1)

Country Link
JP (1) JPS6094729A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017134808A1 (fr) * 2016-02-05 2017-08-10 新電元工業株式会社 Procédé pour production de dispositif à semi-conducteurs
WO2018193554A1 (fr) * 2017-04-19 2018-10-25 新電元工業株式会社 Procédé de production de dispositif à semi-conducteur

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017134808A1 (fr) * 2016-02-05 2017-08-10 新電元工業株式会社 Procédé pour production de dispositif à semi-conducteurs
WO2017135094A1 (fr) * 2016-02-05 2017-08-10 新電元工業株式会社 Procédé pour production de dispositif à semi-conducteurs
WO2018193554A1 (fr) * 2017-04-19 2018-10-25 新電元工業株式会社 Procédé de production de dispositif à semi-conducteur

Also Published As

Publication number Publication date
JPS6094729A (ja) 1985-05-27

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