JPH0339329B2 - - Google Patents
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- Publication number
- JPH0339329B2 JPH0339329B2 JP23874284A JP23874284A JPH0339329B2 JP H0339329 B2 JPH0339329 B2 JP H0339329B2 JP 23874284 A JP23874284 A JP 23874284A JP 23874284 A JP23874284 A JP 23874284A JP H0339329 B2 JPH0339329 B2 JP H0339329B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- nitrogen
- magnetic
- less
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 73
- 239000010408 film Substances 0.000 claims description 44
- 229910052757 nitrogen Inorganic materials 0.000 claims description 38
- 239000010409 thin film Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910020630 Co Ni Inorganic materials 0.000 claims description 8
- 229910002440 Co–Ni Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 239000000203 mixture Substances 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- -1 nickel nitrides Chemical class 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Description
(産業上の利用分野)
本発明はCo−Ni系薄膜を用いた磁気記録媒体
膜の製造方法の改良に関するものである。
(従来の技術)
Co−Ni合金をArと窒素の混合雰囲気中でスパ
ツタすることにより、基板上に磁性薄膜媒体を形
成し、これを真空中で熱処理することにより薄膜
磁気記録媒体をうることは、特開昭57−72307号
公報及びJournal of Applied Physics 第53巻
5号1982年5月、Journal Applied Physics 第
53巻10号1982年10月、Japanese Journal of
Applied Physics 第21巻11号1982年の文献によ
り公知である。
特開昭57−72307号公報記載の発明においては、
特に窒素を3〜40原子%含有させた薄膜を基板上
に形成させ、次いで熱処理することにより、コバ
ルトとニツケルの窒化物を析出させることを特徴
としているものである。また、他の上記公知文献
においても、やはり熱処理後のCo−Ni薄膜中に
窒素(N)を含有せしめ、残留磁束密度Br=
7000G、角形比Br/B3K(磁界3KOeにおける磁束
密度対比残留磁束密度)0.75程度の磁気記録媒体
を得ることが開示されている。
磁気記録の高密度化に伴い、媒体の薄膜化、高
残留密磁束密度、高保磁力に加え、S/Nの比向
上を図るために角形比の向上が同時に要求されて
いるが、上記公知技術により提案されているBr
=7000G、角形比Br/Br3K=0.75程度の薄膜特性
では不充分であり、更に高い特性を有する薄膜を
用いた磁気記録媒体の出現が強く要望されてい
る。
(発明が解決しようとする問題点)
前記特許公報および論文に記載の発明において
は、膜中のスパツタ時の窒素含有量を40原子%以
下に抑え、また熱処理後の窒素含有量を3原子%
以上にすることにより、窒化コバルト又は窒化ニ
ツケル等の窒化物を形成させて磁気特性を得てい
るものであり、窒素含有量が3原子%を下廻ると
析出窒化物の量が少なくなるためにHc、角形比
S(保磁力Hcに対するHrの割合、すなわちHr/
Hc。ここでHrは媒体の磁化曲線においてHc点
での接線がBr点を通り横軸−磁化力軸−と平行
に引いた直線と交わつた点における磁化力)が著
しく低下することが明確に開示されている。
本発明は、上記従来技術で提案されたCo−Ni
合金薄膜を有する磁気記録媒体の磁気特性を改良
し、一層優れた磁気記録媒体の製造方法を提供す
ることを目的とするものである。
(問題点を解決するための手段)
本発明においては、最終生成物である磁性記録
媒体膜の組成を、Niを10乃至30at%、Nを1を
越えて3at%未満含有し、残部が実質的にCoであ
るようにするために、スパツタリングで適当な量
の窒素を含有(30〜50at%N)した超微細結晶又
はほぼアモルフアス状のCo−Ni−N薄膜を形成
し、これを適当な温度で熱処理することを特徴と
する。磁性媒体膜中の窒素量は膜の特性を左右す
るので、1at%を越えて3at%未満とする。この窒
素量にするために、Co−Niターゲツトで基板上
にスパツタリングする時の雰囲気を窒素とアルゴ
ンの体積比で1/1〜3/1の混合気体とし、基
板温度を室温から300℃の範囲とする。スパツタ
リングで得られる薄膜の組成をN量を30〜50at%
で残部が実質的にCo−Niであるようにする。こ
の薄膜を300〜450℃の温度で非酸化性雰囲気中で
熱処理を行い薄膜から窒素ガスの一部を放出させ
る。
磁性記録媒体膜はNiを10at%以上30at%未満
含有し、Nを1at%を越えて3at%未満含有し、残
部が実質的にCoからなるものである。Ni量が
30at%以上になるとCo−Ni薄膜はh.c.p構造より
もむしろf.c.c.構造をとり易く、膜面内に強い配
向性が得られなくなり、角形比を低下させる。
Ni量が10at%未満となると、金属Coの性質に近
くなつて磁性記録媒体として必要な保磁力が得ら
れない。
窒素の含有量が増えるに従い、膜の磁気特性の
うち残留磁束密度Br及び角形比Sは低くなり、
3at%でBrは9000ガウス、Sは0.8となる。
一方、膜の保磁力Hcは窒素の含有量とともに
増大する。しかし、1at%以下になるとHcが550
エルステツド以下になる。このように、窒素量は
3at%以上残留すると磁性媒体膜の特性が劣化す
るので、この量未満であることが必要である。ま
た、窒素含有量を1at%以下にするには450℃以上
にスパツタ膜の熱処理温度を上げる必要があり、
この加熱のために、基板として用いられているア
ルミニウム板の変形や磁性膜の下地層として用い
られるアルマイト層あるいはNi−P層の変質や
割れが生じる恐れがある。以上の理由のために、
磁性記録媒体中の窒素量は1at%を越えて3at%未
満が望ましい。
次に、約40at%の窒素を有するCo−Ni−Nス
パツタ−膜を種々の温度で1時間熱処理した後の
膜中の窒素量を測定したグラフを第1図に示す。
膜中の窒素量が3at%未満になるのは、この図か
ら明らかなように320℃以上で1時間熱処理した
場合である。
300℃を下回る温度で熱処理した場合、N含有
量を3at%以下とするには20時間以上を要し工業
的でない。450℃を越えた場合には1時間未満で
N含有量を3at%以下に減少させることが出来る
が、デイスク基板としてAlを用いた場合、Alの
変形を生じ実用的でない。また、ガラス、セラミ
ツクスを基板に用いた場合にもCo−Ni媒体膜と
の熱膨張係数の差から膜の剥離を生じ実用的でな
い。
従つて、適切な熱処理温度範囲は300〜450℃で
ある。
本磁性記録媒体膜の組成としては、Cr、Pt、
Ru、Pd等の耐食性を向上する元素を単独あるい
は複合で、合計量で2〜25at%になるように添加
してもよい。
(実施例)
本発明を実施するにあたつて、基板としてアル
ミニウム板、ガラス板あるいはセラミツクス(例
えば行Al2O3系)板などを使用することができ
る。このうちアルミニウム板は安価なので適して
いる。しかし、3〜4wt%のMgを含むAl−Mg合
金であつても、磁性記録媒体膜を付けて磁気デイ
スクとして使用すると、磁気ヘツドとの間でCSS
(contact−start−stop)サイクルが起り、磁気
ヘツドによる変形が生じる恐れがある。そこで、
アルミニウム板を十分研磨した上にアルマイト層
やNi−P層を下地層とし、その上に磁性膜が形
成される。アルマイト層やNi−P層は公知の方
法で形成することができる。
磁性膜は本発明の方法に従つて形成される。ス
パツタリングは通常のRFスパツタリングあるい
はマグネトロンDC、又はR.F.スパツタリング等
のいずれの方法でもよいが、マグネトロンDC、
又はR.F.スパツタリングによれば成膜速度が大で
効率的である。ターゲツト材は金属コバルトと金
属ニツケルを溶解して、適当な組成にしたCo−
Ni合金を使用する。この組成は目的とする最終
生成物であるCo−10〜30at%Ni−N膜のCoとNi
の比率に応じて決めることができる。
このターゲットを用いて窒素とアルゴンの混合
気体雰囲気中でスパツタリングを行う。この混合
気体中の窒素及びアルゴンの比率は1/1〜3/
1にすることによつて、生成したスパツタ膜中に
窒素が30〜50at%含まれるようになる。また、こ
のスパツタリング時の基板の温度は室温でよい。
しかし、スパツタリング時に熱を吸収して基板温
度が100℃以上に上昇することもあるが、後で行
う熱処理温度よりも低い300℃までの温度ではCo
−Ni−N膜が生成される。
30〜50at%の窒素がCo−Ni膜に含有された後
で、温処理を行つて窒素を放出減少させることに
よつて、面内異方性を持つた磁性媒体膜とするこ
とができる。
例 1
平板マグネトロンスパツタにより、薄膜を陽極
アルミ酸化アルミ板上に、N2とArの混合ガス雰
囲気中で次の条件でスパツタした。
初期排気 1〜2×10-6Torr
全雰囲気圧 16m Torr
N2とArの体積比 1:1
投入電力 1KW
ターゲツト組成 Co−30at%Ni
ターゲツト径 120mm
極間隔 120mm
膜 厚 1000〓
基板寸法 7mm×8mm×2mm厚
基板温度 室温
上記条件で作成したスパツタ膜は39at%の窒素
を含有し、CoとNiの比率はほぼターゲツトの組
成と同じであつた。この膜をX線回折ないし電子
回折したところ、微細結晶あるいはほとんど結晶
化していないことがわかつた。
この試料を真空中で約1時間熱処理を行い、そ
の熱処理温度を変えた時の、熱処理温度と窒素含
有量の関係を第1図に示した。この図から明らか
なように、媒体膜中の窒素量を3at%未満にする
には320℃以上の温度が必要であつた。
次に、このようにして得た種々の窒素含有量を
もつた試料について、その残留磁束密度Br、保
磁力Hc及び角形比S(保磁力Hcに対するHrの割
合、すなわちHr/Hc。ここで、Hrは媒体の磁
化曲線においてHc点での接線がBr点を通り横軸
−磁化力軸−と平行に引いた直線と交わつた点に
おける磁化力)を測定した。窒素含有量とBr、
Hc及びSの関係を第2図に示す。この図から、
1at%を越えて3at%未満の窒素を含む磁性膜は、
9000ガウス以上のBr、0.8以上のS及び550〜1000
エルステツドのHcを示すことが明らかである。
例 2
例1に示した条件のうち、全雰囲気圧及び窒素
ガス分圧を第1表に示すように変えるとともに、
熱処理を400℃で1時間保持して行い磁性媒体膜
を作成した。このようにして作成した膜の熱処理
前後の窒素含有量も第1表に示す。
(Industrial Application Field) The present invention relates to an improvement in a method for manufacturing a magnetic recording medium film using a Co--Ni thin film. (Prior art) It is possible to form a magnetic thin film medium on a substrate by sputtering a Co-Ni alloy in a mixed atmosphere of Ar and nitrogen, and then obtain a thin film magnetic recording medium by heat-treating this in vacuum. , JP-A-57-72307 and Journal of Applied Physics Vol. 53, No. 5, May 1982, Journal Applied Physics No.
Volume 53, Issue 10, October 1982, Japanese Journal of
It is known from a document published in Applied Physics, Vol. 21, No. 11, 1982. In the invention described in JP-A-57-72307,
In particular, it is characterized in that a thin film containing 3 to 40 atomic percent of nitrogen is formed on a substrate and then heat treated to precipitate cobalt and nickel nitrides. In addition, in other known documents mentioned above, nitrogen (N) is also included in the Co-Ni thin film after heat treatment, and the residual magnetic flux density Br=
It is disclosed that a magnetic recording medium of 7000G and a squareness ratio Br/B 3K (magnetic flux density to residual magnetic flux density in a magnetic field of 3 KOe) of about 0.75 can be obtained. With the increasing density of magnetic recording, in addition to thinner media, higher residual magnetic flux density, and higher coercive force, there is a need for improved squareness ratio in order to improve the S/N ratio. Br proposed by
= 7000G and the squareness ratio Br/Br 3K = about 0.75, which are insufficient in terms of thin film properties, and there is a strong demand for a magnetic recording medium using a thin film with even higher properties. (Problems to be Solved by the Invention) In the invention described in the above-mentioned patent publications and papers, the nitrogen content in the film during sputtering is suppressed to 40 atomic % or less, and the nitrogen content after heat treatment is suppressed to 3 atomic %.
By doing the above, magnetic properties are obtained by forming nitrides such as cobalt nitride or nickel nitride, and when the nitrogen content is less than 3 at%, the amount of precipitated nitrides decreases. Hc, squareness ratio S (ratio of Hr to coercive force Hc, that is, Hr/
Hc. Here, it is clearly disclosed that Hr (magnetizing force) at the point where the tangent at point Hc in the magnetization curve of the medium intersects a straight line drawn parallel to the horizontal axis (magnetizing force axis) through point Br. ing. The present invention is based on the Co-Ni film proposed in the above-mentioned prior art.
The object of the present invention is to improve the magnetic properties of a magnetic recording medium having a thin alloy film and to provide a method for manufacturing an even more excellent magnetic recording medium. (Means for Solving the Problems) In the present invention, the composition of the magnetic recording medium film that is the final product is such that it contains 10 to 30 at% of Ni, more than 1 but less than 3 at% of N, and the remainder is substantially In order to make the Co-Ni film essentially Co, an ultrafine crystalline or almost amorphous Co-Ni-N thin film containing an appropriate amount of nitrogen (30 to 50 at%N) is formed by sputtering, and this is then coated with an appropriate amount of Co. It is characterized by heat treatment at high temperatures. Since the amount of nitrogen in the magnetic medium film influences the characteristics of the film, it should be more than 1 at% and less than 3 at%. In order to achieve this amount of nitrogen, the atmosphere when sputtering onto the substrate with the Co-Ni target was a mixed gas of nitrogen and argon at a volume ratio of 1/1 to 3/1, and the substrate temperature was kept in the range from room temperature to 300°C. shall be. The composition of the thin film obtained by sputtering is determined by changing the amount of N to 30 to 50 at%.
so that the remainder is substantially Co-Ni. This thin film is heat-treated in a non-oxidizing atmosphere at a temperature of 300 to 450°C to release part of the nitrogen gas from the thin film. The magnetic recording medium film contains Ni at 10 at% or more and less than 30 at%, N at more than 1 at% but less than 3 at%, and the remainder substantially consists of Co. Ni amount
When the concentration exceeds 30 at%, the Co--Ni thin film tends to take an fcc structure rather than an hcp structure, making it impossible to obtain strong orientation within the film plane and reducing the squareness ratio.
When the amount of Ni is less than 10 at%, the properties become close to that of metal Co, and the coercive force required for a magnetic recording medium cannot be obtained. As the nitrogen content increases, the residual magnetic flux density Br and squareness ratio S of the magnetic properties of the film decrease,
At 3at%, Br is 9000 Gauss and S is 0.8. On the other hand, the coercive force Hc of the film increases with the nitrogen content. However, when it becomes less than 1at%, Hc becomes 550
Becomes less than Ersted. In this way, the amount of nitrogen is
If more than 3 at% remains, the characteristics of the magnetic medium film will deteriorate, so the amount must be less than this. In addition, in order to reduce the nitrogen content to 1at% or less, it is necessary to increase the heat treatment temperature of the sputtered film to 450℃ or higher.
This heating may cause deformation of the aluminum plate used as the substrate and deterioration or cracking of the alumite layer or Ni--P layer used as the underlayer of the magnetic film. For the above reasons,
The amount of nitrogen in the magnetic recording medium is preferably more than 1 at% and less than 3 at%. Next, FIG. 1 shows a graph showing the amount of nitrogen in the Co--Ni--N sputtered film containing approximately 40 at% nitrogen after heat treatment at various temperatures for 1 hour.
As is clear from this figure, the amount of nitrogen in the film becomes less than 3 at% when the film is heat-treated at 320° C. or higher for 1 hour. When heat treatment is performed at a temperature below 300°C, it takes more than 20 hours to reduce the N content to 3 at% or less, which is not industrially practical. If the temperature exceeds 450°C, the N content can be reduced to 3 at% or less in less than one hour, but if Al is used as the disk substrate, deformation of the Al occurs, making it impractical. Furthermore, even when glass or ceramics is used for the substrate, the film may peel off due to the difference in thermal expansion coefficient with the Co--Ni medium film, making it impractical. Therefore, a suitable heat treatment temperature range is 300-450°C. The composition of this magnetic recording medium film is Cr, Pt,
Elements that improve corrosion resistance, such as Ru and Pd, may be added singly or in combination in a total amount of 2 to 25 at%. (Example) In carrying out the present invention, an aluminum plate, a glass plate, a ceramic (for example, Al 2 O 3 type) plate, etc. can be used as a substrate. Among these, aluminum plates are suitable because they are inexpensive. However, even with an Al-Mg alloy containing 3 to 4 wt% Mg, when a magnetic recording medium film is attached and used as a magnetic disk, CSS between the magnetic head and the
(contact-start-stop) cycles may occur and deformation due to the magnetic head may occur. Therefore,
After thoroughly polishing an aluminum plate, an alumite layer or a Ni--P layer is used as a base layer, and a magnetic film is formed on the base layer. The alumite layer and the Ni-P layer can be formed by a known method. A magnetic film is formed according to the method of the present invention. Sputtering may be performed using any method such as normal RF sputtering, magnetron DC, or RF sputtering, but magnetron DC,
Alternatively, RF sputtering has a high film formation rate and is efficient. The target material is Co-, which is made by melting metal cobalt and metal nickel to create an appropriate composition.
Use Ni alloy. This composition is the Co and Ni of the Co-10 to 30 at% Ni-N film, which is the desired final product.
It can be determined according to the ratio of Sputtering is performed using this target in a mixed gas atmosphere of nitrogen and argon. The ratio of nitrogen and argon in this gas mixture is 1/1 to 3/
By setting the ratio to 1, the generated sputtered film will contain 30 to 50 at% nitrogen. Further, the temperature of the substrate during this sputtering may be room temperature.
However, although heat may be absorbed during sputtering and the substrate temperature may rise to over 100°C, at temperatures up to 300°C, which is lower than the subsequent heat treatment temperature, Co
-Ni-N film is produced. After 30 to 50 at % of nitrogen is contained in the Co--Ni film, a thermal treatment is performed to release and reduce the nitrogen, thereby making it possible to obtain a magnetic medium film with in-plane anisotropy. Example 1 A thin film was sputtered onto an anodic aluminum oxide plate using a flat magnetron sputter in a mixed gas atmosphere of N 2 and Ar under the following conditions. Initial exhaust 1~2×10 -6 Torr Total atmospheric pressure 16m Torr Volume ratio of N2 and Ar 1:1 Input power 1KW Target composition Co-30at%Ni Target diameter 120mm Pole spacing 120mm Film thickness 1000〓 Substrate dimensions 7mm×8mm ×2 mm thick substrate temperature room temperature The sputtered film prepared under the above conditions contained 39 at% nitrogen, and the ratio of Co and Ni was almost the same as the composition of the target. When this film was subjected to X-ray diffraction or electron diffraction, it was found that it was microcrystalline or hardly crystallized. This sample was heat treated in vacuum for about 1 hour, and the relationship between heat treatment temperature and nitrogen content when the heat treatment temperature was varied is shown in FIG. As is clear from this figure, a temperature of 320° C. or higher was required to reduce the amount of nitrogen in the media film to less than 3 at%. Next, regarding the samples with various nitrogen contents obtained in this way, its residual magnetic flux density Br, coercive force Hc, and squareness ratio S (ratio of Hr to coercive force Hc, that is, Hr/Hc. Here, Hr is the magnetizing force at the point where the tangent at point Hc in the magnetization curve of the medium intersects with a straight line drawn parallel to the horizontal axis (magnetizing force axis) passing through point Br. Nitrogen content and Br,
The relationship between Hc and S is shown in Figure 2. From this figure,
A magnetic film containing more than 1 at% and less than 3 at% nitrogen is
Br over 9000 Gauss, S over 0.8 and 550~1000
It is clear that it shows the Hc of Ersted. Example 2 Among the conditions shown in Example 1, the total atmospheric pressure and nitrogen gas partial pressure were changed as shown in Table 1, and
Heat treatment was performed at 400° C. for 1 hour to create a magnetic medium film. Table 1 also shows the nitrogen content of the films thus produced before and after heat treatment.
【表】【table】
【表】
この表より明らかなようにスパツタリング時の
窒素ガス量を50〜75vol・%、すなわちN2量とAr
量の比率を1/1〜3/1とした時に、スパツタ
膜中の窒素含有量は30〜50at%となつた。
(発明の効果)
本発明の方法によれば、前で述べた例に示すよ
うに、9000ガウス以上の高残留磁束密度と0.8以
上の角形比を有するとともに、550〜1000エルス
テツドの保磁力をもつた磁性記録媒体膜が得られ
高記録密度媒体として磁気デイスク等に用いた場
合の性能上の効果は極めて大きい。[Table] As is clear from this table, the amount of nitrogen gas during sputtering is 50 to 75 vol.%, that is, the amount of N2 and Ar
When the ratio of amounts was set to 1/1 to 3/1, the nitrogen content in the sputtered film was 30 to 50 at%. (Effects of the Invention) According to the method of the present invention, as shown in the example described above, it has a high residual magnetic flux density of 9000 Gauss or more, a squareness ratio of 0.8 or more, and a coercive force of 550 to 1000 Oersteds. When a magnetic recording medium film is obtained and used as a high recording density medium in a magnetic disk or the like, the performance effect is extremely large.
第1図は熱処理温度と熱処理後の膜中の窒素含
有量の関係を示すグラフで、第2図は膜中の窒素
含有量と膜の磁気特性の関係を示すグラフであ
る。
FIG. 1 is a graph showing the relationship between the heat treatment temperature and the nitrogen content in the film after heat treatment, and FIG. 2 is a graph showing the relationship between the nitrogen content in the film and the magnetic properties of the film.
Claims (1)
の体積比で1/1〜3/1)中で、室温から300
℃の範囲の温度にある基板上にCo−Niターゲツ
トでスパツタリングを行いNを30〜50at%含む
Co−Ni薄膜を形成した上で、これを非酸化性雰
囲気中で300℃〜450℃の温度で熱処理をして、
Niが10乃至30at%、Nが1を越えて3at%未満で
残部が実質的にCoである磁性膜を得ることを特
徴とする磁性記録媒体膜の製造方法。1 In a mixed gas of nitrogen and argon (volume ratio of nitrogen and argon: 1/1 to 3/1), from room temperature to 300
Sputtering is performed with a Co-Ni target on a substrate at a temperature in the range of °C, containing 30 to 50 at% of N.
After forming a Co-Ni thin film, it is heat-treated at a temperature of 300°C to 450°C in a non-oxidizing atmosphere.
1. A method for producing a magnetic recording medium film, which comprises obtaining a magnetic film containing 10 to 30 at% Ni, more than 1 but less than 3 at% N, and the balance being substantially Co.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23874284A JPS61153827A (en) | 1984-11-13 | 1984-11-13 | Method for manufacturing magnetic recording medium film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23874284A JPS61153827A (en) | 1984-11-13 | 1984-11-13 | Method for manufacturing magnetic recording medium film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61153827A JPS61153827A (en) | 1986-07-12 |
| JPH0339329B2 true JPH0339329B2 (en) | 1991-06-13 |
Family
ID=17034579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23874284A Granted JPS61153827A (en) | 1984-11-13 | 1984-11-13 | Method for manufacturing magnetic recording medium film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61153827A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH062920B2 (en) * | 1986-09-30 | 1994-01-12 | 住友金属鉱山株式会社 | Cobalt alloy for vapor deposition |
-
1984
- 1984-11-13 JP JP23874284A patent/JPS61153827A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61153827A (en) | 1986-07-12 |
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