JPH0339830U - - Google Patents
Info
- Publication number
- JPH0339830U JPH0339830U JP9989889U JP9989889U JPH0339830U JP H0339830 U JPH0339830 U JP H0339830U JP 9989889 U JP9989889 U JP 9989889U JP 9989889 U JP9989889 U JP 9989889U JP H0339830 U JPH0339830 U JP H0339830U
- Authority
- JP
- Japan
- Prior art keywords
- character
- pattern
- insulating film
- integrated circuit
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
第１図ａは本考案によるマーク付き半導体装置
における集積回路の非能動領域に設けられた、第
１の機能を持つ半導体装置と第２の機能を持つ半
導体装置とを識別するためのコンタクトホールに
よつて描かれた文字又は模様と、該文字又は模様
を覆う範囲に形成されたアルミ蒸着膜の一部分の
断面図、第１図ｂは前記コンタクトホールによつ
て描かれた文字又は模様と、該文字又は模様を覆
う範囲に形成されたアルミ蒸着膜の平面図、第２
図乃至第４図は従来例を示す説明図で、第２図は
集積回路の配線変更を行なうスイツチ構成図、第
３図は配線変更を行なうための集積回路のアルミ
配線の平面図、第４図は配線変更を行なうための
集積回路のコンタクトホールの平面図、第５図は
従来例によるコンタクトホールにより集積回路に
非能動領域に文字又は模様を描いた場合の半導体
装置の断面図。
３２…絶縁膜、３３…層間絶縁膜、３５…コン
タクトホール、４０…アルミ蒸着膜。
FIG. 1a shows a contact hole provided in a non-active area of an integrated circuit in a marked semiconductor device according to the present invention for identifying a semiconductor device having a first function and a semiconductor device having a second function. Figure 1b is a cross-sectional view of the letters or patterns drawn by the contact holes and a portion of the aluminum vapor-deposited film formed in the area covering the letters or patterns. Plan view of the aluminum vapor deposition film formed in the area covering the characters or patterns, 2nd
4 to 4 are explanatory diagrams showing conventional examples, FIG. 2 is a configuration diagram of a switch for changing wiring of an integrated circuit, FIG. 3 is a plan view of aluminum wiring of an integrated circuit for changing wiring, and FIG. The figure is a plan view of a contact hole in an integrated circuit for changing wiring, and FIG. 5 is a cross-sectional view of a semiconductor device in which letters or patterns are drawn in a non-active area of an integrated circuit using a conventional contact hole. 32... Insulating film, 33... Interlayer insulating film, 35... Contact hole, 40... Aluminum vapor deposition film.
Claims (1)
領域に設けられた絶縁膜と、該絶縁膜に複数のコ
ンタクトホールを形成することにより描かれた文
字又は模様と、該文字又は模様を覆う範囲に形成
されたアルミ蒸着膜とにより構成されたことを特
徴とするマーク付き半導体装置。 An insulating film provided in a non-active area of a silicon wafer on which an integrated circuit is formed, a character or pattern drawn by forming a plurality of contact holes in the insulating film, and a character or pattern formed in a range covering the character or pattern. What is claimed is: 1. A semiconductor device with a mark, characterized in that it is comprised of a vapor-deposited aluminum film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9989889U JPH087624Y2 (en) | 1989-08-29 | 1989-08-29 | Marked semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9989889U JPH087624Y2 (en) | 1989-08-29 | 1989-08-29 | Marked semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0339830U true JPH0339830U (en) | 1991-04-17 |
| JPH087624Y2 JPH087624Y2 (en) | 1996-03-04 |
Family
ID=31648930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9989889U Expired - Lifetime JPH087624Y2 (en) | 1989-08-29 | 1989-08-29 | Marked semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH087624Y2 (en) |
-
1989
- 1989-08-29 JP JP9989889U patent/JPH087624Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH087624Y2 (en) | 1996-03-04 |