JPH034269U

JPH034269U -

Info

Publication number: JPH034269U
Application number: JP6416889U
Authority: JP
Priority date: 1989-05-31
Filing date: 1989-05-31
Publication date: 1991-01-17

Description

[Brief explanation of the drawing]

第１図はこの考案の実施例を示す斜視図、第２
図はそのヒンジ部の断面図、第３図はこの考案の
他の実施例を示す平面図、第４図は第３図の断面
図、第５図は更に他の例を示す平面図、第６図は
第５図の断面図、第７図は更に他の例を示す平面
図、第８図は第７図の断面図、第９図は従来の加
速度センサを示す斜視図、第１０図は従来の加速
度センサの検知すべき加速度と垂直な入力加速度
に対する応答を示す図である。 Figure 1 is a perspective view showing an embodiment of this invention;
3 is a plan view showing another embodiment of the invention, FIG. 4 is a sectional view of FIG. 3, and FIG. 5 is a plan view showing still another example. 6 is a sectional view of FIG. 5, FIG. 7 is a plan view showing another example, FIG. 8 is a sectional view of FIG. 7, FIG. 9 is a perspective view of a conventional acceleration sensor, and FIG. 10 is a diagram showing a response of a conventional acceleration sensor to an input acceleration perpendicular to the acceleration to be detected.

Claims

[Claims for Utility Model Registration] (1) A mass part is constructed by overlapping and bonding two or more silicon single crystal substrates, and the mass part includes at least one silicon single crystal substrate along one surface thereof. The hinge portion is integrally extended, the extended end of the hinge portion is integrally connected to the support portion, and the center of gravity of the mass portion and the center of gravity of the hinge portion are aligned in substantially the same plane perpendicular to the input axis to be detected. An acceleration sensor. (2) The acceleration sensor according to claim 1, wherein a piezoresistive element is formed on a surface of the hinge portion that is shared with a surface of the silicon single crystal substrate to which the hinge portion is connected. (3) The acceleration sensor according to claim 1 or 2, wherein a quartz thin film or a borosilicate glass thin film is interposed on the bonding surface of the silicon single crystal substrate.