JPH0344402B2 - - Google Patents
Info
- Publication number
- JPH0344402B2 JPH0344402B2 JP59228437A JP22843784A JPH0344402B2 JP H0344402 B2 JPH0344402 B2 JP H0344402B2 JP 59228437 A JP59228437 A JP 59228437A JP 22843784 A JP22843784 A JP 22843784A JP H0344402 B2 JPH0344402 B2 JP H0344402B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- thermistor element
- glass
- vapor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Thermistors And Varistors (AREA)
Description
〔産業上の利用分野〕
本発明はサーミスタ素子に係り、特にセンサと
して使用されるガラス封止型サーミスタ素子の製
造方法に関するものである。
〔従来の技術〕
サーミスタは温度が変化するとその電気抵抗が
著しく変化する特性を有する。特に温度が上昇す
るにつれて電気抵抗が減少する負の温度係数を持
つNTC（Negative Temperature Coefficent）
サーミスタは各方面に使用されているが、その用
途の１つに温度測定用として使用されている。
従来の測定用サーミスタとして、例えば特公昭
52−7535号公報に記載されているように、サーミ
スタ・チツプの両面に耐熱導電性塗料を焼付けて
電極を設けるとともに金属リード線の基部をこれ
また耐熱導電性塗料で前記電極に接続し、これを
ガラス中に封止して測定用サーミスタの製造能率
を著しく向上させたものがある。
〔発明が解決すべき問題点〕
この場合、第３図ａ〜ｃに示す如く、サーミス
タ・チツプ１０の表面に耐熱導電性塗料（Ag、
Pd、Ag、Pt、Au等）により厚膜電極１１，１
１を構成したのち、これに金属リード線１２，１
２を同じく耐熱導電性塗料１３で固定した構造で
あるので、耐熱導電性塗料に含まれているガラス
フリツトによりサーミスタ・チツプ１０と厚膜電
極１１との間にはオーミツク特性が得られにく
く、そのため測定素子として所望の電圧・電流依
存特性の良好なものが得られ難くなり、Ｂ定数、
抵抗値特性のバラツキが生じ易い等の問題点があ
り、高度な制御技術を必要としていた、そのため
均一な特性を得るのにこのサーミスタ・チツプ１
０上にAuやPtといつた貴金属系の比較的高価な
電極材料を厚膜状態で多量に使用して厚膜電極１
１を形成しなければならず、高価なものとならざ
るを得なかつた。
〔問題点を解決すべき手段〕
前記の如き問題点を解決するために本発明では
蒸着薄膜電極が形成されたサーミスタ・チツプに
リード線端部と前記電極面とを耐熱導電材にて電
気的接触を保ち、かつ、これらをガラスで被覆し
たサーミスタ素子において、ウエハー状に表面精
密加工したサーミスタ材料基板の基板温度を200
〜400℃に加熱し、真空度を10-5TORR以上にし
て金属材料の蒸着を行うことによりサーミスタ素
子を製造した。
これによりオーミツク接触性の電極をガラスフ
リツトの含有しない蒸着薄膜電極を前記の条件で
形成し、またこれに耐熱導電材でリード線を接続
し、かつこれらをガラスで被覆したので良好なオ
ーミツク特性が得られ、電圧（電流）依存特性を
大幅に改善し、Ｂ定数、抵抗値等のバラツキの少
ないものを提供することが可能となる。
〔実施例〕
本発明の一実施例を第１図にもとづき説明す
る。
第１図ａは本発明により構成されたガラス封止
型のサーミスタ素子、同ｂはその断面図、同ｃは
サーミスタ・チツプと蒸着薄膜電極との拡大図で
ある。
第１図において、サーミスタ・チツプ１の両面
には蒸着薄膜電極２が形成されている。サーミス
タ・チツプ１としては例えばMn−Ni−Co系のも
のが使用される。蒸着薄膜電極２の表面にはリー
ド線３が耐熱導電材４により接着されている。そ
してこれらの部分がガラス５により被覆される。
蒸着薄膜電極としては、Ｗ、Mo、Ti、Ta、
Cu、Ag、Au、Pt、Pd等を使用する。すなわち、
これらの（貴）金属のうち少くとも１種のものに
よりなる電極材料を真空室中でサーミスタ基板上
に加熱蒸着することにより良好なオーミツク接触
を有する薄膜電極を構成できる。
前記材料が適当である理由は、第１表に示す如
き金属材料で蒸着薄膜電極を構成してその特性を
測定したところ、これらのものがオーミツク接触
の電極を構成することができた。なおこのときサ
ーミスタの基板温度は200℃〜400℃であつた。
[Industrial Application Field] The present invention relates to a thermistor element, and particularly to a method for manufacturing a glass-sealed thermistor element used as a sensor. [Prior Art] A thermistor has the characteristic that its electrical resistance changes significantly when the temperature changes. NTC (Negative Temperature Coefficent), which has a negative temperature coefficient where the electrical resistance decreases as the temperature rises
Thermistors are used in various fields, and one of their uses is for temperature measurement. As a conventional measurement thermistor, for example,
As described in Publication No. 52-7535, heat-resistant conductive paint is baked on both sides of the thermistor chip to provide electrodes, and the base of a metal lead wire is also connected to the electrode using heat-resistant conductive paint. The manufacturing efficiency of measuring thermistors has been significantly improved by sealing them in glass. [Problems to be solved by the invention] In this case, as shown in FIGS. 3a to 3c, a heat-resistant conductive paint (Ag,
Thick film electrodes 11, 1 with Pd, Ag, Pt, Au, etc.)
1, then connect the metal lead wires 12, 1 to this.
2 is similarly fixed with heat-resistant conductive paint 13, it is difficult to obtain ohmic characteristics between the thermistor chip 10 and thick film electrode 11 due to the glass frit contained in the heat-resistant conductive paint, and therefore the measurement is difficult. It becomes difficult to obtain a device with good voltage/current dependence characteristics as desired, and the B constant,
This thermistor chip 1 has had problems such as the resistance characteristics tending to vary, and requires advanced control technology.
Thick-film electrode 1
1 had to be formed, and it had to be expensive. [Means to Solve the Problems] In order to solve the above-mentioned problems, in the present invention, a thermistor chip on which a vapor-deposited thin film electrode is formed is electrically connected to the lead wire end and the electrode surface using a heat-resistant conductive material. In a thermistor element that maintains contact and is covered with glass, the substrate temperature of the thermistor material substrate whose surface is precisely processed into a wafer shape is set to 200℃.
A thermistor element was manufactured by heating to ~400°C and depositing a metal material at a vacuum level of 10 -5 TORR or higher. As a result, a vapor-deposited thin film electrode containing no glass frit was formed as an ohmic contact electrode under the above conditions, and lead wires were connected to this using a heat-resistant conductive material, and these were covered with glass, resulting in good ohmic properties. This makes it possible to significantly improve the voltage (current) dependence characteristics and provide products with less variation in B constant, resistance value, etc. [Example] An example of the present invention will be described based on FIG. FIG. 1a is a glass-sealed thermistor element constructed according to the present invention, FIG. 1b is a sectional view thereof, and FIG. 1c is an enlarged view of the thermistor chip and vapor-deposited thin film electrode. In FIG. 1, vapor-deposited thin film electrodes 2 are formed on both sides of a thermistor chip 1. As the thermistor chip 1, for example, a Mn--Ni--Co type one is used. A lead wire 3 is bonded to the surface of the vapor-deposited thin film electrode 2 with a heat-resistant conductive material 4 . These parts are then covered with glass 5. Vapor deposited thin film electrodes include W, Mo, Ti, Ta,
Use Cu, Ag, Au, Pt, Pd, etc. That is,
By heating and vapor-depositing an electrode material made of at least one of these (noble) metals onto a thermistor substrate in a vacuum chamber, a thin film electrode having good ohmic contact can be constructed. The reason why the above-mentioned materials are suitable is that when vapor-deposited thin film electrodes were constructed using the metal materials shown in Table 1 and their properties were measured, it was found that these materials could be used to construct ohmic contact electrodes. Note that the temperature of the thermistor substrate at this time was 200°C to 400°C.
本発明によれば、すぐれたオーミツク特性を有
する蒸着薄膜電極を形成できるので、非オーミツ
ク接触にもとづき存在したサーミスタ素子の電圧
（電流）依存特性が大幅に改善され、特性のバラ
ツキが改善され、選別歩留りを向上することがで
きる。しかも厚膜電極に比べ焼付け工程がなく、
Ｂ定数、抵抗値特性のバラツキが少ないものを提
供することができる。
また蒸着薄膜で電極を形成するので、従来のよ
うに高価な貴金属を多量に使用する厚膜電極に比
較して低廉な電極材料でローコストにこれを形成
することができる。しかも従来のものより信頼性
の高い電極構成を容易に得ることができる。
According to the present invention, it is possible to form a vapor-deposited thin film electrode with excellent ohmic characteristics, so the voltage (current) dependence characteristics of the thermistor element, which existed based on non-ohmic contact, are significantly improved, the variation in characteristics is improved, and the selection Yield can be improved. Moreover, there is no baking process compared to thick film electrodes,
It is possible to provide a device with less variation in B constant and resistance value characteristics. Furthermore, since the electrodes are formed from vapor-deposited thin films, they can be formed at low cost using inexpensive electrode materials, compared to conventional thick film electrodes that use large amounts of expensive noble metals. Furthermore, it is possible to easily obtain an electrode configuration that is more reliable than the conventional one.
第１図は本発明の一実施例構成図、第２図は本
発明のサーミスタ素子の製造方法説明図、第３図
は従来のサーミスタ素子を示す。
１……サーミスタ・チツプ、２……蒸着薄膜電
極、３……リード線、４……耐熱導電材、５……
ガラス。
FIG. 1 is a configuration diagram of an embodiment of the present invention, FIG. 2 is an explanatory diagram of a method of manufacturing a thermistor element of the present invention, and FIG. 3 shows a conventional thermistor element. 1... Thermistor chip, 2... Vapor deposited thin film electrode, 3... Lead wire, 4... Heat resistant conductive material, 5...
glass.
Claims (1)
プにリード線端部と前記電極面とを耐熱導電材に
て電気的接触を保ち、かつ、これらをガラスで被
覆したサーミスタ素子において、ウエハー状に表
面精密加工したサーミスタ材料基板の基板温度を
200〜400℃に加熱し、真空度を10-5TORR以上に
して金属材料の蒸着を行うことを特徴とするサー
ミスタ素子の製造方法。 ２ 前記蒸着薄膜電極としてＷ、Mo、Ti、Ta、
Cu、Ag、Au、Pt、Pdの少なくとも１つを使用
したことを特徴とする請求項１記載のサーミスタ
素子の製造方法。 ３ 前記ガラスとして、SiO2−PbO−K2O系、
SiO2−PbO−K2O−Na2O系ガラスで構成するこ
とを特徴とする請求項１又は請求項２記載のサー
ミスタ素子の製造方法。[Claims] 1. In a thermistor element in which a thermistor chip on which a vapor-deposited thin film electrode is formed, electrical contact is maintained between the end of the lead wire and the electrode surface using a heat-resistant conductive material, and these are covered with glass. , the substrate temperature of the thermistor material substrate whose surface is precisely machined into a wafer shape.
A method for manufacturing a thermistor element, which comprises heating to 200 to 400°C and depositing a metal material at a degree of vacuum of 10 -5 TORR or higher. 2 As the vapor deposited thin film electrode, W, Mo, Ti, Ta,
2. The method of manufacturing a thermistor element according to claim 1, wherein at least one of Cu, Ag, Au, Pt, and Pd is used. 3 As the glass, SiO 2 −PbO−K 2 O type,
3. The method of manufacturing a thermistor element according to claim 1, wherein the thermistor element is made of SiO2 -PbO- K2O - Na2O glass.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22843784A JPS61105802A (en) | 1984-10-30 | 1984-10-30 | Thermistor element and manufacuture thereof |
| US06/792,456 US4712085A (en) | 1984-10-30 | 1985-10-29 | Thermistor element and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22843784A JPS61105802A (en) | 1984-10-30 | 1984-10-30 | Thermistor element and manufacuture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61105802A JPS61105802A (en) | 1986-05-23 |
| JPH0344402B2 true JPH0344402B2 (en) | 1991-07-05 |
Family
ID=16876473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22843784A Granted JPS61105802A (en) | 1984-10-30 | 1984-10-30 | Thermistor element and manufacuture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61105802A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0291306U (en) * | 1989-01-06 | 1990-07-19 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5544768B2 (en) * | 1972-05-17 | 1980-11-14 | ||
| JPS5228238A (en) * | 1975-08-29 | 1977-03-03 | Hitachi Ltd | Offering report circuit |
| JPS5443560A (en) * | 1977-09-12 | 1979-04-06 | Ishizuka Denshi Kk | Electrode drawing structure for thermistor |
| JPS5636102A (en) * | 1979-08-31 | 1981-04-09 | Tdk Electronics Co Ltd | Temperature detector and method of manufacturing same |
| JPS5911602A (en) * | 1982-07-13 | 1984-01-21 | ティーディーケイ株式会社 | Negative temperature coefficient thermistor and method of producing same |
-
1984
- 1984-10-30 JP JP22843784A patent/JPS61105802A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61105802A (en) | 1986-05-23 |
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