JPS61105802A - Thermistor element and manufacuture thereof - Google Patents
Thermistor element and manufacuture thereofInfo
- Publication number
- JPS61105802A JPS61105802A JP22843784A JP22843784A JPS61105802A JP S61105802 A JPS61105802 A JP S61105802A JP 22843784 A JP22843784 A JP 22843784A JP 22843784 A JP22843784 A JP 22843784A JP S61105802 A JPS61105802 A JP S61105802A
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- thin film
- electrode
- thermistor element
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 14
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 229910052774 Proactinium Inorganic materials 0.000 claims 1
- 229910052770 Uranium Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000003973 paint Substances 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 241001590997 Moolgarda engeli Species 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910021124 PdAg Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はサーミスタ素子に係如、特にセンサとして使用
されるガラス封止型サーミスタ素子及びその製造方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thermistor element, and particularly to a glass-sealed thermistor element used as a sensor and a method for manufacturing the same.
サーミスタは温度が変化するとその電気抵抗が著しく変
化する特性を有する。特に温度が上昇するにつれて電気
抵抗が減少する負の温度係数を持ツＮＴＣ（Ｎｅｇａｔ
ｉｖｅ Ｔｅｍｐｅｒａｔｕｒｅ Ｃｏｅｆｆｉｃｅｎ
ｔ）サーミスタは各方面に使用されているが、その用途
の１つに温度測定用として使用されている。A thermistor has the characteristic that its electrical resistance changes significantly when the temperature changes. In particular, NTC has a negative temperature coefficient that reduces electrical resistance as the temperature rises.
ive Temperature Coefficen
t) Thermistors are used in various fields, and one of their uses is for temperature measurement.
従来の測定用サーミスタとして９例えば特公昭５２−７
５３５号公報に記載されているように、サーミスタ・チ
ップの両面に耐熱導電性塗料を焼付けて電極を設けると
ともに金属リード線の基部をこれ壕だ耐熱導電性塗料で
前記電極に接続し、これをガラス中に封止している。9 as a conventional measurement thermistor, for example, Japanese Patent Publication No. 52-7
As described in Japanese Patent No. 535, electrodes are provided by baking heat-resistant conductive paint on both sides of the thermistor chip, and the base of a metal lead wire is connected to the electrodes with the heat-resistant conductive paint. It is sealed in glass.
） この場合、第３図（ａ）〜ｆｃｌに示す如く、サー
ミスり・チップ１００表面に耐熱導電性塗料（Ａｇ 、
ＰｄＡｇ 、 Ｐｔ 、 Ａ、ｕ 等）によシ厚膜電
極１１．１１を構成したのち、これに金属リード線１２
．１２を同じく耐熱導電性塗料１３で固定している。) In this case, as shown in FIG. 3(a) to fcl, a heat-resistant conductive paint (Ag,
After forming a thick film electrode 11.11 using PdAg, Pt, A, u, etc., a metal lead wire 12 is attached to this.
．． 12 is similarly fixed with heat-resistant conductive paint 13.
しかし、耐熱導電性塗料に含まれているガラスフリット
によシサーミスターチツブ１０と厚膜電極１１との間に
はオーミック特性が得られに＜＜。However, ohmic characteristics cannot be obtained between the scissor mister chip 10 and the thick film electrode 11 due to the glass frit contained in the heat-resistant conductive paint.
そのため測定素子として必要な電圧・電流依存特性が良
くな（、Ｂ定数、抵抗値等特性のバラツキがあった。Therefore, the voltage/current dependence characteristics required as a measuring element were not good (there were variations in characteristics such as B constant and resistance value).
しかもこのサーミスタ・チップ１０上に厚膜電極１１を
形成するためにＡｌｌやｐｔといった貴金属系の比較的
高価な電極材料を厚膜状態で多量に使用しなければなら
ず、高価なものとならざるを得なかった。Moreover, in order to form the thick film electrode 11 on the thermistor chip 10, a large amount of relatively expensive noble metal-based electrode material such as All or PT must be used in a thick film state, resulting in an expensive product. I didn't get it.
また耐熱導電性塗料焼付は時においてサーミスタ材料が
熱影響を受け、Ｂ定数、抵抗値等の特性バラツキを生じ
る。Furthermore, when the heat-resistant conductive paint is baked, the thermistor material is sometimes affected by heat, resulting in variations in characteristics such as B constant and resistance value.
前記の如き問題点を解決するために本発明ではサーミス
タ・チップに蒸着薄膜電極を形成してオーミック接触性
の電極を構成し、これにリード線を耐熱導電材で接触さ
せ、これらをガラスで被覆した。In order to solve the above-mentioned problems, the present invention forms an ohmic contact electrode by forming a vapor-deposited thin film electrode on the thermistor chip, contacts the lead wire with a heat-resistant conductive material, and covers these with glass. did.
これによりオーミック接触性の電極をガラスフリットの
含有しない蒸着薄膜電極で構成したので良好なオーミッ
ク特性が得られ、電圧（電流）依存特性を大幅に改善す
ることが可能となる。As a result, since the ohmic contact electrode is composed of a vapor-deposited thin film electrode containing no glass frit, good ohmic characteristics can be obtained, and voltage (current) dependent characteristics can be significantly improved.
本発明の一実施例を第１図にもとづき説明する。 An embodiment of the present invention will be described based on FIG.
第１図（ａ）は本発明により構成されたガラス封止型の
サーミスタ素子、同ｉｂｌはその断面図、同ｔｃ＋はサ
ーミスタ・チップと蒸着薄膜電極との拡大図である。FIG. 1(a) is a glass-sealed thermistor element constructed according to the present invention, ibl is a cross-sectional view thereof, and tc+ is an enlarged view of the thermistor chip and vapor-deposited thin film electrode.
第１図において、サーミスタ・チップ１０両面には蒸着
薄膜電極２が形成されている。サーミスタ・チップ１と
しては例えばＭｎ −Ｎｉ−Ｃｏ系のものが使用される
。蒸着薄膜電極２の表面にはリード線３が耐熱導電材４
により接着されている。そ、してこれらの部分がガラス
５によシ被覆される。In FIG. 1, vapor-deposited thin film electrodes 2 are formed on both sides of a thermistor chip 10. As the thermistor chip 1, for example, a Mn-Ni-Co type one is used. A lead wire 3 is connected to a heat-resistant conductive material 4 on the surface of the vapor-deposited thin film electrode 2.
It is glued by. These parts are then covered with glass 5.
蒸着薄膜電極としては、 Ｗ、Ｍｏ 、 Ｔｉ 、 Ｔ
ａ 、 Ｃｕ 。Vapor deposited thin film electrodes include W, Mo, Ti, and T.
a, Cu.
Ａｇ 、 Ａ、ｕ 、 Ｐｔ 、 Ｐｄ 等を使用する
。すなわち、これらの（責）金属のうち少くとも１種の
ものによシなる電極材料を真空室中でサーミスタ基板上
に加熱蒸着することにより良好なオーミック接触を有す
る薄膜電極を構成できる。Ag, A, u, Pt, Pd, etc. are used. That is, by heating and vapor-depositing an electrode material made of at least one of these metals on a thermistor substrate in a vacuum chamber, a thin film electrode having good ohmic contact can be constructed.
前記材料が適当である理由は、第１表に示す如き金属材
料で蒸着薄膜電極を構成してその特性を測定したところ
、これらのものがオーミック接触の電極を構成すること
ができた。なおこのときサーミスタの基板温度は２００
℃〜４００℃であった。The reason why the above-mentioned materials are suitable is that when we constructed vapor-deposited thin film electrodes using the metal materials shown in Table 1 and measured their characteristics, we found that these materials could be used to construct ohmic contact electrodes. At this time, the temperature of the thermistor substrate is 200
The temperature was between 400°C and 400°C.
第１表
これにより前記各材料が適当であることがわかる０
このようにして形成した薄膜電極２，２の外側にリード
線３，３を耐熱導電材４によシミ気的接触させる。この
リード線３は、芯線としてＦｅ−Ｎｉ合金を使用しこれ
にＣｕ被覆したジュメット線である。Table 1 From this, it can be seen that each of the above-mentioned materials is suitable. The lead wires 3, 3 are brought into contact with the heat-resistant conductive material 4 on the outside of the thin film electrodes 2, 2 thus formed. This lead wire 3 is a Dumet wire using a Fe--Ni alloy as a core wire and coated with Cu.
そしてこれらをガラス５によシ被覆する。このガラス５
はＳ １ｏ２− ＰｂＯ−Ｋ、０系あるいは５ｉ０２−
ＰｂＯ−Ｋ２Ｏ−Ｎａ、Ｏ系のものが使用される。この
ようにして第１図に示すガラス封止型のサーミスタ素子
を構成することができる。These are then covered with glass 5. This glass 5
is S 1o2- PbO-K, 0 series or 5i02-
A PbO-K2O-Na,O type material is used. In this way, the glass-sealed thermistor element shown in FIG. 1 can be constructed.
次にこのサーミスタ素子の製造方法について。Next, let's talk about the manufacturing method of this thermistor element.
第２図によシ説明する。This will be explained with reference to FIG.
■ まず遷移金属酸化物（Ｍｎ −Ｎｉ −Ｃｏ −Ａ
−１１−Ｆｅ −Ｃｕ などの酸化物）を所定の金属
モル比で秤量・調合する。■ First, transition metal oxides (Mn - Ni - Co - A
-11-Fe (oxides such as -Cu) are weighed and prepared at a predetermined metal molar ratio.
■ この秤量・調合したものをボールミルポットに酸化
物材料・純水を加え、一定時間混合する。■ Add the oxide material and pure water to the weighed and mixed mixture in a ball mill pot and mix for a certain period of time.
■ この混合材料を脱水し乾燥する。■ Dehydrate and dry this mixed material.
■ 乾燥した材料を８００°Ｃ〜１０００℃の温度で仮
焼成する。■ The dried material is calcined at a temperature of 800°C to 1000°C.
■ 振動ミル容器に、この仮焼成済み材料を入れてこれ
に純水を加え所定時間粉砕し、これを微粉末とする。■Put the pre-fired material into a vibrating mill container, add pure water, and grind for a predetermined period of time to form a fine powder.
■ 乳鉢にこの微粉末材料を入れ、水またはＰＶＡ（ポ
リビニルアルコール）のような適当なバインダーを加え
、混合後所定寸法に成型する。(2) Place this finely powdered material in a mortar, add water or a suitable binder such as PVA (polyvinyl alcohol), and after mixing, shape it into a predetermined size.
■ 成型後にこれをＡｉｒ雰囲気で１２００℃〜１４０
０℃の温度にて本焼成を行う。■ After molding, heat it in an air atmosphere at 1200°C to 140°C.
Main firing is performed at a temperature of 0°C.
■ 本焼成によシ得られた焼結材料（インゴット）をス
ライス加工し、ウェハー状に切シ出す。■ The sintered material (ingot) obtained through main firing is sliced and cut into wafers.
そして精密平面ラップ盤にてウェハーを所定の厚さく例
えば０．１５〜０．５０ａｉ）に仕上げる。Then, the wafer is finished to a predetermined thickness (for example, 0.15 to 0.50 ai) using a precision plane lapping machine.
■ このようにして精密表面加工されて仕上げだウェハ
ーを洗浄したのち、高真空蒸着装置内に取り付け、ウェ
ハー基板温度を２００℃〜４００℃にし、真空度を１０
−’ ＴＯＲＲ以上にして、金属材料の蒸着を行う。金
属材料としては前記の如く。■ After cleaning the finished wafer with precision surface processing in this way, it is installed in a high vacuum evaporation equipment, the wafer substrate temperature is set to 200℃ to 400℃, and the degree of vacuum is set to 10℃.
-' Evaporation of metal material is performed at a temperature higher than TORR. The metal material is as described above.
（貴）全域よシ選択される。かくしてウェハーの両面に
蒸着薄膜電極が形成される。(You) The whole area is selected. Thus, deposited thin film electrodes are formed on both sides of the wafer.
［相］ このようにして蒸着薄膜電極が形成されたウェ
ハーをダイシング加工によ多切断し、チップ化してサー
ミスタ・チップを得る。[Phase] The wafer on which the vapor-deposited thin film electrodes have been formed is cut into multiple pieces by dicing to obtain thermistor chips.
■ このサーミスタ慟チップの薄膜電極部分に芯線がＦ
ｅ−Ｎｉ合金でＣｕ被覆されたジュメット線よりなるリ
ード線の端部を耐熱導電材で付着し乾燥接着する。■ The core wire is F in the thin film electrode part of this thermistor chip.
The ends of a lead wire made of a Dumet wire coated with Cu and e-Ni alloy are attached with a heat-resistant conductive material and dried and bonded.
０ それからガラス封着機によりこのリード線の接着さ
れたチップ全体をガラス被覆する。0 Then, the entire chip to which the lead wires are bonded is coated with glass using a glass sealing machine.
このようにして第１図に示す如きガラス封止型のサーミ
スタ素子を得ることができる。In this way, a glass-sealed thermistor element as shown in FIG. 1 can be obtained.
本発明によれば、すぐれたオーミック特性を有する蒸着
薄膜電極を形成できるので、非オーミツク接触にもとづ
き存在したサーミスタ素子の電圧（電流）依存特性が大
幅に改善され、特性のバラツキが改善され２選別歩留シ
を向上することかできる。しかも厚膜電極に比べ焼付は
工程がなく。According to the present invention, it is possible to form a vapor-deposited thin film electrode with excellent ohmic characteristics, so the voltage (current) dependent characteristics of the thermistor element, which existed based on non-ohmic contact, are significantly improved, and the variation in characteristics is improved. Yield can be improved. Moreover, there is no baking process compared to thick film electrodes.
Ｂ定数、抵抗値特性のバラツキが少ないものを提供する
ことができる。It is possible to provide a device with less variation in B constant and resistance value characteristics.
壕だ蒸着薄膜で電極を形成するので、従来のように高価
な貴金属を多量に使用する厚膜電極に比較して低床な電
極材料でローコストにこれを形成することができる。し
かも従来のものよシ信頼性の高い電極構成を容易に得る
ことができる。Since the electrode is formed from a trench-deposited thin film, it can be formed at low cost using a low-profile electrode material compared to conventional thick film electrodes that use large amounts of expensive precious metals. Moreover, a more reliable electrode structure than the conventional one can be easily obtained.
第１図は本発明の一実施例構成図、第２図は本発明のサ
ーミスタ素子の製造方法説明図、第３図は従来のサーミ
スタ素子を示す。
１・・・サーミスタ・チップ ２・・・蒸着薄膜電極３
・・・リード線 ４・・・耐熱導電材５・・
・ガラス
特許出願人 ティーディーケイ株式会社代理人弁理士
山 谷 晧 榮
手続補正書（自発）
１、事件の表示 昭和５９年特許願第２２８４３７号２
、発明の名称 サーミスタ素子およびその製造方法３、
補正をする者
事件との関係 特許出願人
住 所 東京都中央区日本橋−丁目１３番１号氏 名
（３０６）ティーディーケイ株式会社代表者 大 歳
寛
４、代理人
住 所 東京都千代田区神田淡路町１丁目１９番８号６
、補正の対象 明細書の特許請求の範囲の面補正の内容
１、明細書第１頁第５行〜第２頁第７行の特許請求の範
囲を下記の通り全文補正する。
「１．蒸着薄膜電極が形成されたサーミスタ・チップに
リード線端部と前記電極面とを耐熱導電材料にて電気的
接触を保ち、かつこれらをガラスで被覆したことを特徴
とするサーミスタ素子。
２、前記蒸着薄膜電極としてＷ、Ｍｏ、Ｔｉ。
Ｔａ、Ｃｕ、Ａｇ、Ａｕ、Ｐｔ、Ｐｄの少くとも１つを
使用したことを特徴とする特許請求の範囲第１項記載の
サーミスタ素子。
３、粉末材料をディスク状に成型・焼結した後。
これをウェハー状に表面精密加工したサーミスタ材料基
板上に金属を蒸着して薄膜電極を形成した後に、これを
チップ加工してサーミスタ・チップとし、このサーミス
タ・チップの電極面にリード線を耐熱導電材にて電気的
接触を保持させ、その後このサーミスタ・チップとリー
ド線をガラスで被覆したことを特徴とするサーミスタ素
子の製造方法。
４．前記薄腺電極としてＷ、Ｍｏ、Ｔ ｔ、Ｔａ。
Ｃｕ、Ａｇ、Ａｕ、Ｐｔ、Ｐｄの少くとも１つを使用し
たことを特徴とする特許請求の範囲第３項記載のサーミ
スタ素子の製造方法。」
以上FIG. 1 is a configuration diagram of an embodiment of the present invention, FIG. 2 is an explanatory diagram of a method of manufacturing a thermistor element of the present invention, and FIG. 3 shows a conventional thermistor element. 1... Thermistor chip 2... Vapor deposited thin film electrode 3
...Lead wire 4...Heat-resistant conductive material 5...
・Glass patent applicant Akira Yamatani, patent attorney representing TDC Co., Ltd. Procedural amendment (spontaneous) 1. Indication of case Patent Application No. 228437 of 1982 2
, Title of the invention: Thermistor element and its manufacturing method 3,
Relationship with the case of the person making the amendment Patent applicant address 13-1 Nihonbashi-chome, Chuo-ku, Tokyo Name
(306) TDC Co., Ltd. Representative Daitoshi
Kan 4, Agent Address: 1-19-8-6 Kanda Awajicho, Chiyoda-ku, Tokyo
, Target of amendment Content 1 of amending the claims of the specification: The full text of the claims from page 1, line 5 of the specification to page 2, line 7 will be amended as follows. 1. A thermistor element comprising: a thermistor chip on which a vapor-deposited thin film electrode is formed; the end of the lead wire and the electrode surface are kept in electrical contact with a heat-resistant conductive material; and these are covered with glass. 2. The thermistor element according to claim 1, wherein at least one of W, Mo, Ti, Ta, Cu, Ag, Au, Pt, and Pd is used as the vapor-deposited thin film electrode. After forming and sintering the powder material into a disk shape, metal is vapor-deposited onto a thermistor material substrate whose surface has been precisely processed into a wafer shape to form a thin film electrode, and then this is processed into a thermistor chip. 4. A method for manufacturing a thermistor element, characterized in that the lead wire is kept in electrical contact with the electrode surface of the thermistor chip using a heat-resistant conductive material, and then the thermistor chip and the lead wire are covered with glass.4. The method for manufacturing a thermistor element according to claim 3, wherein at least one of W, Mo, Tt, Ta, Cu, Ag, Au, Pt, and Pd is used as the thin electrode. ."that's all
Claims (1)
ード線端部と前記電極面とを耐熱導電材にて電気的接触
を保ち、かつこれらをガラスで被覆したことを特徴とす
るサーミスタ素子。 ２、前記蒸着薄膜電極としてＷ、Ｍｏ、Ｔｉ、Ｔａ、Ｃ
ｕ、Ａｇ、Ａｕ、Ｐｔ、Ｐｄの少くとも１つを使用した
ことを特徴とする特許請求の範囲第１項記載のサーミス
タ素子。 ３、粉末材料をディスク状に成型・焼結した後、これを
ウェハー状に表面精密加工したサーミスタ材料基板上に
金属を蒸着して薄膜電極を形成した後に、これをチップ
加工してサーミスタ・チップとし、このサーミスタ・チ
ップの電極面にリード線を耐熱導電材にて電気的接触を
保持させ、その後このサーミスタ・チップとリード線を
ガラスで被覆したことを特徴とするサーミスタ素子の製
造方法。 ４、前記薄膜電極としてＷ、Ｍｏ、Ｔｉ、Ｔａ、Ｃｕ、
Ａｇ、Ａｕ、Ｐｔ、Ｐａの少くとも１つを使用したこと
を特徴とする特許請求の範囲第３項記載のサーミスタ素
子の製造方法。[Claims] 1. A thermistor chip on which a vapor-deposited thin film electrode is formed, the end of the lead wire and the electrode surface are kept in electrical contact with a heat-resistant conductive material, and these are covered with glass. Thermistor element. 2. W, Mo, Ti, Ta, C as the vapor deposited thin film electrode
The thermistor element according to claim 1, characterized in that at least one of U, Ag, Au, Pt, and Pd is used. 3. After molding and sintering the powder material into a disk shape, it is shaped into a wafer and the surface of the thermistor material is precisely processed. After that, metal is evaporated onto the thermistor material substrate to form a thin film electrode, and this is processed into chips to form thermistor chips. A method for manufacturing a thermistor element, characterized in that electrical contact is maintained between a lead wire and the electrode surface of the thermistor chip using a heat-resistant conductive material, and then the thermistor chip and the lead wire are covered with glass. 4. As the thin film electrode, W, Mo, Ti, Ta, Cu,
4. The method of manufacturing a thermistor element according to claim 3, wherein at least one of Ag, Au, Pt, and Pa is used.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22843784A JPS61105802A (en) | 1984-10-30 | 1984-10-30 | Thermistor element and manufacuture thereof |
| US06/792,456 US4712085A (en) | 1984-10-30 | 1985-10-29 | Thermistor element and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22843784A JPS61105802A (en) | 1984-10-30 | 1984-10-30 | Thermistor element and manufacuture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61105802A true JPS61105802A (en) | 1986-05-23 |
| JPH0344402B2 JPH0344402B2 (en) | 1991-07-05 |
Family
ID=16876473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22843784A Granted JPS61105802A (en) | 1984-10-30 | 1984-10-30 | Thermistor element and manufacuture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61105802A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0291306U (en) * | 1989-01-06 | 1990-07-19 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4913300A (en) * | 1972-05-17 | 1974-02-05 | ||
| JPS5228238A (en) * | 1975-08-29 | 1977-03-03 | Hitachi Ltd | Offering report circuit |
| JPS5443560A (en) * | 1977-09-12 | 1979-04-06 | Ishizuka Denshi Kk | Electrode drawing structure for thermistor |
| JPS5636102A (en) * | 1979-08-31 | 1981-04-09 | Tdk Electronics Co Ltd | Temperature detector and method of manufacturing same |
| JPS5911602A (en) * | 1982-07-13 | 1984-01-21 | ティーディーケイ株式会社 | Negative temperature coefficient thermistor and method of producing same |
-
1984
- 1984-10-30 JP JP22843784A patent/JPS61105802A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4913300A (en) * | 1972-05-17 | 1974-02-05 | ||
| JPS5228238A (en) * | 1975-08-29 | 1977-03-03 | Hitachi Ltd | Offering report circuit |
| JPS5443560A (en) * | 1977-09-12 | 1979-04-06 | Ishizuka Denshi Kk | Electrode drawing structure for thermistor |
| JPS5636102A (en) * | 1979-08-31 | 1981-04-09 | Tdk Electronics Co Ltd | Temperature detector and method of manufacturing same |
| JPS5911602A (en) * | 1982-07-13 | 1984-01-21 | ティーディーケイ株式会社 | Negative temperature coefficient thermistor and method of producing same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0291306U (en) * | 1989-01-06 | 1990-07-19 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0344402B2 (en) | 1991-07-05 |
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