JPH0344928A - Forming method for pattern of amorphous alloy magnetic film - Google Patents
Forming method for pattern of amorphous alloy magnetic filmInfo
- Publication number
- JPH0344928A JPH0344928A JP1181114A JP18111489A JPH0344928A JP H0344928 A JPH0344928 A JP H0344928A JP 1181114 A JP1181114 A JP 1181114A JP 18111489 A JP18111489 A JP 18111489A JP H0344928 A JPH0344928 A JP H0344928A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- amorphous alloy
- magnetic film
- alloy magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Magnetic Heads (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は 磁気記憶装置に用いられる薄膜磁気ヘッドな
どの磁気デバイスに使用される非晶質合金磁性膜のパタ
ーン形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of patterning an amorphous alloy magnetic film used in magnetic devices such as thin film magnetic heads used in magnetic storage devices.
従来の技術
近抵 薄膜磁気ヘッドの磁気コアには高飽和磁化 高透
磁率の非晶質合金磁性膜が用いられている。磁気コアの
磁気抵抗を下げてヘッド効率をあげるために あるいは
記録時に磁気コアの磁気飽和を防ぐために磁性膜は厚く
することが望ましくちまた狭トラツク化 マルチチャン
ネル化にともない磁性膜の高精度の微細加工技術が要求
されている。従来の非晶質合金磁性膜の微細加工の手法
（よ磁性膜を形成後、磁気コアに対応したフォトレジス
トパターンを形成し これをマスクとして磁気コアパ
ターン部以外をイオンエツチング（スバツタエッチンク
： イオンミリングなど）で除去している。Conventional Technology Near Resistance An amorphous alloy magnetic film with high saturation magnetization and high magnetic permeability is used for the magnetic core of a thin film magnetic head. In order to lower the magnetic resistance of the magnetic core and increase head efficiency, or to prevent magnetic saturation of the magnetic core during recording, it is desirable to make the magnetic film thicker, and also to narrow the track.High-precision microfabrication of the magnetic film is required as multi-channel technology becomes available. technology is required. Conventional microfabrication method of amorphous alloy magnetic film (After forming a magnetic film, a photoresist pattern corresponding to the magnetic core is formed, and using this as a mask, ion etching is performed on areas other than the magnetic core pattern part (Svatuta etching: removed by ion milling, etc.).
発明が解決しようとする課題
イオンエツチングでパターン形成する場合に（よマスク
となるフォトレジストも磁性膜と同程度のエツチング速
度でエツチングされるたム 厚い磁性膜に対しては同程
度の厚いフォトレジストマスクが必要である。厚いフォ
トレジストをマスクにしてイオンエツチングを行う場合
に（よ マスクによるイオンの遮蔽 エツチングされた
磁性膜のマスクへの再付着などによって高精度のパター
ン形成は困難である。また イオンエツチングのエツチ
ング速度は素子へのダメージを抑えるためにあまり大き
くすることができず、エツチング時間が非常に長くなる
。Problems to be Solved by the Invention When forming a pattern by ion etching, the photoresist that serves as a mask is etched at the same etching speed as the magnetic film. A mask is required.When performing ion etching using a thick photoresist as a mask, it is difficult to form a high-precision pattern due to ion shielding by the mask and re-adhesion of the etched magnetic film to the mask. The etching speed of ion etching cannot be increased too much in order to suppress damage to the device, and the etching time becomes very long.
本発明（よ このような従来技術の課題を解決すること
を目的とする。The present invention aims to solve the problems of the prior art.
課題を解決するための手段
本発明は薄膜磁気ヘッドなどに使われる厚い非晶質合金
磁性膜を高精度にパターン形成する手段を提供するもの
であも その内容は 下記の一連の工程を含むものであ
る。Means for Solving the Problems The present invention provides a means for forming a pattern with high precision on a thick amorphous alloy magnetic film used in thin-film magnetic heads, etc. The content thereof includes the following series of steps. .
（ｉ）基材上にフォトレジストパターンを形成する工程
（ｉｉ）前記基材上及びフォトレジストパターン上に非
晶質合金磁性膜を形成する工程
（ｉｉｉ）前記非晶質合金磁性膜を化学エツチングする
工程
（ｉｖ）前記フォトレジストパターンを除去する工ｆ隻
さらに前記化学エツチングに使用するエツチング液がフ
ッ酸と硝酸を含む液からなり、基材上に下地層としてＣ
ｒを形成するものであも作用
本発明によると、フォトレジストパターンの厚さを非晶
質合金磁性膜の厚さ以上にしておけば非晶質合金磁性膜
が厚い場合でもパターン形成は容易であも フォトレジ
ストパターンの寸法にほぼ等しく非晶質合金磁性膜が除
去されるた取 高精度のパターン形成が容易にできる。(i) Forming a photoresist pattern on the base material (ii) Forming an amorphous alloy magnetic film on the base material and the photoresist pattern (iii) Chemically etching the amorphous alloy magnetic film step (iv) of removing the photoresist pattern.Furthermore, the etching solution used in the chemical etching is a solution containing hydrofluoric acid and nitric acid, and C is used as an underlayer on the substrate.
According to the present invention, if the thickness of the photoresist pattern is made equal to or greater than the thickness of the amorphous alloy magnetic film, pattern formation is easy even when the amorphous alloy magnetic film is thick. Amo: The amorphous alloy magnetic film is removed with dimensions almost equal to the dimensions of the photoresist pattern. A high-precision pattern can be easily formed.
さらに 本発明によってパターン形成された非晶質合金
磁性、膜のパターンのエツジは比較的なだらかになるた
めパターンの上に順次形成される膜のパターンエツジに
よる切断、膜質の劣化が起こりに＜ Ｌｓ
実施例
以下に 本発明の実施例について説明する。Furthermore, since the edges of the pattern of the amorphous alloy magnetic film patterned according to the present invention are relatively smooth, cutting due to the pattern edges of the film sequentially formed on the pattern and deterioration of film quality may occur. Examples Examples of the present invention will be described below.
先ず、本発明による作用を第３図により説明する。フォ
トレジストパターン１０を基材１２上に形成後、その上
にスパッタ法により非晶質合金磁性膜１１を形成する。First, the operation of the present invention will be explained with reference to FIG. After forming a photoresist pattern 10 on a base material 12, an amorphous alloy magnetic film 11 is formed thereon by sputtering.
・フォトレジストパターンｌＯの側斜面に付着した非晶
質合金磁性膜（図中／’％ッチングで示す）は他の平坦
な面上に付着した非晶質磁性合金膜に比べて膜の緻密性
が悪く、化学エツチングを受は安（１非晶質合金磁性膜
１１を形成後、膜表面を短時間化学エツチングするとフ
ォトレジストパターン１０の側斜面に付着した非晶質合
金磁性膜１１が選択的にエツチングされる。・The amorphous alloy magnetic film attached to the side slope of the photoresist pattern IO (indicated by /'% etching in the figure) has a higher film density than the amorphous magnetic alloy film attached to other flat surfaces. (1) If the film surface is chemically etched for a short time after forming the amorphous alloy magnetic film 11, the amorphous alloy magnetic film 11 attached to the side slopes of the photoresist pattern 10 will be selectively etched. Etched by.
その後、フォトレジストパターンを溶剤で除去するとフ
ォトレジストパターンＩＯ以外の部分に非晶質合金磁性
膜１１が残る。本発明によるとフォトレジストパターン
ｌＯの厚さを非晶質合金磁性膜１１の厚さ以上にしてお
けば 非晶質合金磁性膜１１が厚い場合でもパターン形
成は容易であもまた 第３図に示したフォトレジストパ
ターン１０の寸法りにほぼ等しく非晶質合金磁性膜１１
が除去されるたム 高精度のパターン形成が容易にでき
る。Thereafter, when the photoresist pattern is removed with a solvent, the amorphous alloy magnetic film 11 remains in areas other than the photoresist pattern IO. According to the present invention, if the thickness of the photoresist pattern 10 is made equal to or greater than the thickness of the amorphous alloy magnetic film 11, pattern formation is easy even when the amorphous alloy magnetic film 11 is thick. The amorphous alloy magnetic film 11 is approximately equal to the dimensions of the photoresist pattern 10 shown.
High-precision pattern formation can be easily achieved.
さらに 本発明によってパターン形成された非晶質合金
磁性膜のパターンのエツジは比較的なだらかになるため
パターンの上に順次形成される膜のパターンエツジによ
る動脈 膜質の劣化が起こりにくＬ〜
第２図に本発明を適用した複合型薄膜磁気ヘッドの構造
を示す。第２図（ａ）はその平面は 第２図（ｂ）は第
２図（ａ）のＡ−Ａ′における断面図であも １は非磁
性材料からなる基板、２．３、４はそれぞれＣｏ−Ｔａ
−７，ｒ非晶質合金磁性膜からなる下部磁性胤 中間磁
性慝 上部磁性凰５、６はＡｌ２Ｏ３からなる絶縁恩
７はＡｌからなるコイノＩ／、８はパーマロイからなる
磁気抵抗効果素子である。本ヘッドの動作について説明
する。Furthermore, since the edges of the pattern of the amorphous alloy magnetic film patterned according to the present invention are relatively gentle, deterioration of the arterial membrane quality due to the pattern edges of the films sequentially formed on the pattern is less likely to occur. The figure shows the structure of a composite thin film magnetic head to which the present invention is applied. FIG. 2(a) is a plane view, and FIG. 2(b) is a cross-sectional view taken along line A-A' in FIG. Co-Ta
-7,r Lower magnetic layer made of amorphous alloy magnetic film Middle magnetic layer Upper magnetic layer 5 and 6 are insulating layer made of Al2O3
7 is a Koino I/ made of Al, and 8 is a magnetoresistive element made of Permalloy. The operation of this head will be explained.
記録はコイル７に通電して磁気ギャップ９からの漏れ磁
界で記録媒体に記録されも 再生（友 記録媒体から磁
気ギャップ９に流入した磁束が上部磁性層４を通り、磁
気抵抗効果素子８に導かれることによって行われも
第２図の複合型薄膜磁気ヘッドにおいて本発明が適用さ
れた上部磁性層４の形成方法を詳しく説明すも 以下の
説明では図面を簡略化するため絶縁層６、磁気抵抗効果
素子８より下の部分は省略した断面図のみを用いる。Recording is performed by energizing the coil 7 and recording on the recording medium by the leakage magnetic field from the magnetic gap 9. During reproduction, the magnetic flux flowing from the recording medium into the magnetic gap 9 passes through the upper magnetic layer 4 and is guided to the magnetoresistive element 8. The method for forming the upper magnetic layer 4 to which the present invention is applied in the composite thin-film magnetic head shown in FIG. 2 will be described in detail. Only a cross-sectional view is used in which the portion below the effect element 8 is omitted.
第１図に上部磁性層４の製造工程を示す。まず第１図（
ａ）に示すように磁気抵抗効果素子８が幅９μｍに形成
され その上に絶縁層６が厚さ０．２μｍ形成されも
さらにフォトレジストパターン１０が幅５μ孔 厚さ６
μｍに形成される。FIG. 1 shows the manufacturing process of the upper magnetic layer 4. First, Figure 1 (
As shown in a), the magnetoresistive element 8 is formed to have a width of 9 μm, and the insulating layer 6 is formed to a thickness of 0.2 μm thereon.
Furthermore, the photoresist pattern 10 has a hole width of 5 μm and a thickness of 6 μm.
Formed in μm.
次に第１図（ｂ）に示すようにＣｏ−Ｔａ−Ｚｒ非晶質
合金磁性膜１１が厚さ５μｍスパッタ法で形成される。Next, as shown in FIG. 1(b), a Co--Ta--Zr amorphous alloy magnetic film 11 is formed to a thickness of 5 .mu.m by sputtering.
次に第１図（ｃ）に示すようにフッ酸と硝酸と水の混合
液でＣｏ−Ｔａ−Ｚｒ非晶質合金磁性膜１１の表面が化
学エツチングされ フォトレジストパターン１０の側斜
面に付着したＣｏ−ＴａＺｒ非晶質合金磁性膜１１が選
択的に除去される。Next, as shown in FIG. 1(c), the surface of the Co-Ta-Zr amorphous alloy magnetic film 11 was chemically etched with a mixture of hydrofluoric acid, nitric acid, and water, and the film adhered to the side slopes of the photoresist pattern 10. Co--TaZr amorphous alloy magnetic film 11 is selectively removed.
次に第１図（ｄ）に示すように溶剤でフォトレジストパ
ターン１０が除去され 上部磁性層４がパターン形成さ
れも このようにして厚さ５μｍの比較的厚い上部磁性
層が磁気抵抗効果素子に左右２μｍずつ重なりを持って
精度良く形成することができも 従来のように磁性膜を
形成後イオンエツチングする方法では厚さ５μｍの磁性
膜に幅５μｍの溝を形成することはイオンのフォトレジ
ストによる連敗 エツチングされた磁性膜の再付着によ
り、極めて困難であも また磁気抵抗効果素子が磁性膜
の下に極薄い絶縁層を介しであるので磁性膜のエツチン
グの終点の管理が厳密に要求されも
本発明では化学エツチングは短時間でよいためフォトレ
ジストの側斜面に付着したＣｏ−ＴａＺｒ非晶質合金磁
性膜が選択的に除去された後にエツチング液が下地層を
侵すことはほとんどない力文 これを防ぐためにはフッ
酸と硝酸を含むエツチング液に侵されな−い下地層とし
てＣｒを薄く形成しておけば良１．％
発明の効果
以上述べたように本発明によれば厚さが厚い非晶質磁性
合金膜を短時間で高精度にパターン形成できる。特に従
来のイオンエツチングではきわめて困難繊 非晶質合金
磁性膜に幅が膜厚程度の溝を形成する場合などにはいっ
そう効果があもNext, as shown in FIG. 1(d), the photoresist pattern 10 is removed using a solvent, and the upper magnetic layer 4 is patterned. Although it is possible to form grooves with a width of 5 μm in a 5 μm thick magnetic film using ion photoresist, it is possible to form grooves with a width of 5 μm in a magnetic film with a thickness of 5 μm using the conventional method of forming a magnetic film and then performing ion etching. Consecutive failures Due to reattachment of the etched magnetic film, etching is extremely difficult.Also, since the magnetoresistive element is placed under the magnetic film through an extremely thin insulating layer, strict control of the end point of the etching of the magnetic film is required. In the present invention, chemical etching only takes a short time, so the etching solution hardly attacks the underlying layer after the Co-TaZr amorphous alloy magnetic film attached to the side slope of the photoresist is selectively removed. In order to prevent this, it is best to form a thin layer of Cr as a base layer that will not be attacked by etching solutions containing hydrofluoric acid and nitric acid. % Effects of the Invention As described above, according to the present invention, a thick amorphous magnetic alloy film can be patterned with high precision in a short time. It is especially effective when forming grooves whose width is about the same as the film thickness in an amorphous alloy magnetic film, which is extremely difficult to achieve with conventional ion etching.
第１図は本発明の一実施例にかかる非晶質合金磁性膜の
パターン形成方法を示す工程猛 第２図（ａ）、 （ｂ
）は本発明の製造方法が適用された薄膜磁気ヘッドの平
面図及び断面は 第３図は本発明の詳細な説明するため
の断面図であも■・・・基板、 ２・・・下部磁性凰
３・・・中間磁性恩４・・・上部磁性層 ５・・・６絶
縁恩 ７・・・コイ）Ｉ＜８・・・磁気抵抗効果素子、
９・・・磁気ギャッズ １０・・・フォトレジストパ
ターン、 １１・・・非晶質合金磁性風 １２・・・基
桟FIG. 1 is a process diagram showing a method of patterning an amorphous alloy magnetic film according to an embodiment of the present invention.
) is a plan view and a cross section of a thin film magnetic head to which the manufacturing method of the present invention is applied. FIG. 3 is a cross-sectional view for explaining the present invention in detail.凰
3... Intermediate magnetic layer 4... Upper magnetic layer 5... 6 Insulating layer 7... Coil) I<8... Magnetoresistive element,
9... Magnetic gadgets 10... Photoresist pattern, 11... Amorphous alloy magnetic wind 12... Base rail
Claims (4)
と、前記基材上及びレジストパターン上に非晶質合金磁
性膜を形成する工程と、前記非晶質合金磁性膜を化学エ
ッチングする工程と、前記フォトレジストパターンを除
去する工程とを含むことを特徴とする非晶質合金磁性膜
のパターン形成方法。(1) A step of forming a photoresist pattern on a base material, a step of forming an amorphous alloy magnetic film on the base material and the resist pattern, and a step of chemically etching the amorphous alloy magnetic film. . A method for forming a pattern of an amorphous alloy magnetic film, the method comprising: removing the photoresist pattern.
法で形成されることを特徴とする請求項１記載の非晶質
合金磁性膜のパターン形成方法。(2) The method for forming a pattern of an amorphous alloy magnetic film according to claim 1, wherein the amorphous alloy magnetic film contains Co as a main component and is formed by a sputtering method.
と硝酸を含むことを特徴とする請求項２記載の非晶質合
金磁性膜のパターン形成方法。(3) The method for forming a pattern of an amorphous alloy magnetic film according to claim 2, wherein the etching solution used in the chemical etching contains hydrofluoric acid and nitric acid.
とする請求項３記載の非晶質合金磁性膜のパターン形成
方法。(4) The method for forming a pattern of an amorphous alloy magnetic film according to claim 3, characterized in that Cr is formed as an underlayer on the base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1181114A JP2861080B2 (en) | 1989-07-12 | 1989-07-12 | Method for forming pattern of amorphous alloy magnetic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1181114A JP2861080B2 (en) | 1989-07-12 | 1989-07-12 | Method for forming pattern of amorphous alloy magnetic film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0344928A true JPH0344928A (en) | 1991-02-26 |
| JP2861080B2 JP2861080B2 (en) | 1999-02-24 |
Family
ID=16095094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1181114A Expired - Fee Related JP2861080B2 (en) | 1989-07-12 | 1989-07-12 | Method for forming pattern of amorphous alloy magnetic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2861080B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102487913B1 (en) * | 2015-07-01 | 2023-01-13 | 삼성전자주식회사 | Method for patterning amorphous alloy, a amorphous alloy pattern structure using the same, dome switch and method for thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61105715A (en) * | 1984-10-26 | 1986-05-23 | Matsushita Electric Ind Co Ltd | Manufacturing method of magnetic thin film head |
| JPS61105716A (en) * | 1984-10-26 | 1986-05-23 | Matsushita Electric Ind Co Ltd | Manufacturing method of magnetic thin film head |
| JPS61179541A (en) * | 1985-02-04 | 1986-08-12 | Hitachi Chem Co Ltd | Pattern forming method applying lift-off method |
-
1989
- 1989-07-12 JP JP1181114A patent/JP2861080B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61105715A (en) * | 1984-10-26 | 1986-05-23 | Matsushita Electric Ind Co Ltd | Manufacturing method of magnetic thin film head |
| JPS61105716A (en) * | 1984-10-26 | 1986-05-23 | Matsushita Electric Ind Co Ltd | Manufacturing method of magnetic thin film head |
| JPS61179541A (en) * | 1985-02-04 | 1986-08-12 | Hitachi Chem Co Ltd | Pattern forming method applying lift-off method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2861080B2 (en) | 1999-02-24 |
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