JPH034547A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the generation of a crack and a disconnection by a method wherein the width of the parts between the base film of conductive leads and bump electrodes is made narrow. CONSTITUTION:When bump electrodes 2 and conductive leads 3 are fixed thermally by pressure to each other by a bonding tool 5, a semiconductor element 1 and a base film 4 are caused a dimensional change due to a thermal expansion and the concentration of a tensile stress is generated on both ends of parts 3a between the film 4 of the leads 3 and the electrodes 2. At this time, the parts 3a between the film 4 and the electrodes 2 are respectively formed into a form having a central part of a narrow width. Thereby, the tensile stress is dispersed, the concentration of the stress is weakened and a crack in the leads 3 and the disconnection of the leads stop generating.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Application in Industry The present invention relates to a so-called connector that connects a film carrier having a large number of conductive leads on a flexible base film and a semiconductor element having a large number of protruding electrodes by thermocompression bonding. The present invention relates to a young bonding type semiconductor device.

Conventional technology A conventional example of a semiconductor device using the gigantic bonding method is shown in the second example.
Shown in Figures (a) to (C). Ends of conductive leads 3 extending from a base film 4 are connected to protruding electrodes 2 provided on the periphery of the semiconductor element 1 .

Further, the portion 3a of the conductive lead 3 extending from the base film 4 also has a constant width. This series of connections is made between the conductive lead 3 and the protruding electrode 2 using the bonding tool 5.
This is done by heat-compression bonding at the same time.

Problems to be Solved by the Invention The conductive leads 3 and the semiconductor element 1 are connected to the base film 4 by simultaneously bonding the conductive leads 3 and the protruding electrodes 2 by thermocompression using a bonding tool.

However, due to the difference in thermal expansion coefficient between the semiconductor element 1 and the base film 4, the semiconductor element 1 and the base film 4 are
There was a problem in that dimensional changes occurred between the conductive leads 3, tensile stress was applied to the conductive leads 3, and cracks and disconnections occurred at both ends of the portions 3a of the conductive leads 3 between the base film 4 and the protruding electrodes 2.

Means for Solving the Problems The technical means of the present invention for solving the above problems is to narrow the width of the portion of the conductive lead between the base film and the protruding electrode.

Effect The effect of this means is as follows. In other words, the tensile stress generated in the conductive lead due to the dimensional change between the base film and the semiconductor element due to the difference in thermal expansion coefficient during thermocompression bonding is dispersed because the width of the part between the base film and the protruding electrode of the conductive lead is narrowed, and the conductive lead concentration at both ends between the base film and the protruding electrodes becomes weaker. As a result, problems such as cracks and disconnections at both ends between the base film of the conductive lead and the protruding electrode can be solved.

EXAMPLE Hereinafter, an example of the present invention will be explained with reference to FIGS. 1(a), (b), and (C). Note that the same numbers are given to the same parts as in the conventional example.

In this embodiment, a conductive lead 3 extending from a base film 4 is connected to a protruding electrode 2 provided on the periphery of a semiconductor element 1. As shown in FIGS. 1(a) and 1(b), the portion 3a has a narrow width at the center.

Next, the operation of the configuration of this embodiment will be explained. The protruding electrode 2 and the conductive lead 3 are bonded by the bonding tool 5.
When the semiconductor element 1 and the base film 4 are bonded by thermocompression, dimensional changes occur due to thermal expansion, and tensile stress is concentrated at both ends of the portion 3a between the base film 4 and the protruding electrode 2 of the conductive lead 3. By forming the portion 3a between the base film 4 and the protruding electrode 2 into a narrow shape at the center, the tensile stress is dispersed and its concentration is weakened.
Inconveniences such as cracks and disconnection of the conductive leads 3 do not occur.

In the above embodiments, a shape that is narrow in the width direction has been described, but it is clear that a shape that is narrow in the thickness direction is also effective.

Effects of the Invention In the present invention, the shape of the portion between the base film and the protruding electrode of the conductive lead connected to the protruding electrode formed on the periphery of the semiconductor element is narrowed. As a result, the tensile stress applied to the conductive lead due to the dimensional change due to the difference in thermal expansion coefficient between the base film and the semiconductor element that occurs during thermocompression bonding can be dispersed and its concentration can be weakened. Problems such as cracks and disconnections at both ends between electrodes can be solved.

In addition, since the conductive lead becomes thinner, the amount of heat conducted to the conductive lead during thermocompression bonding of the conductive lead and the protruding electrode is reduced, so the temperature during thermocompression bonding can be lowered. Since the amount of thermal expansion of the semiconductor element is reduced, the tensile stress applied to the conductive leads can also be reduced.

[Brief explanation of drawings]

FIG. 1(a) is a plan view showing an embodiment of the semiconductor device of the present invention, FIG. 1(b) is a partially enlarged plan view of FIG. 1(a),
FIG. 1(C) is a bottom view showing the shape of the tip of the bonding tool. FIG. 2(a) is a plan view showing a conventional semiconductor device, FIG. 2(b) is a partially enlarged plan view of FIG. 2(a), and FIG. 2(C) is a bottom view showing the tip shape of the bonding tool. It is a diagram. 1... Semiconductor element, 2... Protruding electrode,
3... Conductive lead, 3a... Part of the conductive lead 3 between the protruding electrode 2 and the base film 4,
4... Base film, 5... Bonding tool.

Claims (1)

[Claims] It comprises a film carrier in which conductive leads are provided on a flexible base film, and a semiconductor element in which protruding electrodes are formed to which the conductive leads are connected, and the lead width of the conductive leads is determined by the connection with the protruding electrodes. and a semiconductor device having a thick part on the flexible base film and a thin part in the middle thereof.