JPH0357961U - - Google Patents
Info
- Publication number
- JPH0357961U JPH0357961U JP11821289U JP11821289U JPH0357961U JP H0357961 U JPH0357961 U JP H0357961U JP 11821289 U JP11821289 U JP 11821289U JP 11821289 U JP11821289 U JP 11821289U JP H0357961 U JPH0357961 U JP H0357961U
- Authority
- JP
- Japan
- Prior art keywords
- quartz ampoule
- gallium
- single crystal
- arsenic
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000003708 ampul Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 3
- 229910052785 arsenic Inorganic materials 0.000 claims 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 3
- 239000000155 melt Substances 0.000 claims 2
- 238000001514 detection method Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Chemically Coating (AREA)
Description
第１図は本考案の砒化ガリウム単結晶製造装置
の一実施例を示す石英アンプルの正面図、第２図
は結晶成長用電気炉の温度分布特性図を示す。 １：Ｕ字管、２：Ｇａ溶液、３：石英アンプル
、４：石英ボート、５：Ａｓ、６：レベルセンサ
。
の一実施例を示す石英アンプルの正面図、第２図
は結晶成長用電気炉の温度分布特性図を示す。 １：Ｕ字管、２：Ｇａ溶液、３：石英アンプル
、４：石英ボート、５：Ａｓ、６：レベルセンサ
。
Claims (1)
- 石英アンプル内の一端にガリウム及び種結晶を
入れた石英ボートを配置し、他端にはヒ素を配置
して前記ガリウムと前記ヒ素とを真空の高温下で
反応させて融液とし、該融液から単結晶を製造す
る砒化ガリウム単結晶製造装置において、前記石
英アンプルの一方の管端部に連結され内部が融液
ガリウムにより封止されているＵ字管と、該Ｕ字
管の示す液位より前記石英アンプル内の圧力を検
出してその検出信号により該石英アンプル内のヒ
素蒸気圧が一気圧となるように前記石英アンプル
の温度を制御するレベルセンサとが設けてあるこ
とを特徴とする砒化ガリウム単結晶製造装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11821289U JPH0357961U (ja) | 1989-10-06 | 1989-10-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11821289U JPH0357961U (ja) | 1989-10-06 | 1989-10-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0357961U true JPH0357961U (ja) | 1991-06-05 |
Family
ID=31666395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11821289U Pending JPH0357961U (ja) | 1989-10-06 | 1989-10-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0357961U (ja) |
-
1989
- 1989-10-06 JP JP11821289U patent/JPH0357961U/ja active Pending
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