JPS6450518A - Apparatus for liquid growth of semiconductor crystal - Google Patents

Apparatus for liquid growth of semiconductor crystal

Info

Publication number
JPS6450518A
JPS6450518A JP20775287A JP20775287A JPS6450518A JP S6450518 A JPS6450518 A JP S6450518A JP 20775287 A JP20775287 A JP 20775287A JP 20775287 A JP20775287 A JP 20775287A JP S6450518 A JPS6450518 A JP S6450518A
Authority
JP
Japan
Prior art keywords
sink
upper face
heat sink
crystal
semiconductor crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20775287A
Other languages
Japanese (ja)
Other versions
JPH0261136B2 (en
Inventor
Takahiro Kanba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP20775287A priority Critical patent/JPS6450518A/en
Publication of JPS6450518A publication Critical patent/JPS6450518A/en
Publication of JPH0261136B2 publication Critical patent/JPH0261136B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To grow a crystal having a flat upper face, by disposing an external heat sink on the outer periphery of an internal heat sink of an ampule for bulk growth, and disposing it so that the upper face of the external heat sink is located at a position higher than the upper face of the internal heat sink. CONSTITUTION:An internal heat sink 13 is so mounted as to include two quartz tubes 11, 12 having different diameters and connected each other, to seal lower end of the first tube 11 of a lower small diameter to become flat and to bring it into contact with the inner wall of the tube 11, and solvent 14 and a source crystal 15 are contained in the second 12 of large diameter to grow a semiconductor crystal 17 by an ampule 10 for bulk growth in which the upper end of the tube 12 is sealed in high vacuum on the sink 13. In such a semiconductor crystal liquid growing apparatus, an external heat sink 16 is disposed on the outer periphery of the sink 13 of the ampule 10 in case of growing the crystal, and the upper face of the sink 16 is so disposed as to be located at a position where the upper face of the sink 15 is higher than the upper face 13a of the sink 13.
JP20775287A 1987-08-21 1987-08-21 Apparatus for liquid growth of semiconductor crystal Granted JPS6450518A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20775287A JPS6450518A (en) 1987-08-21 1987-08-21 Apparatus for liquid growth of semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20775287A JPS6450518A (en) 1987-08-21 1987-08-21 Apparatus for liquid growth of semiconductor crystal

Publications (2)

Publication Number Publication Date
JPS6450518A true JPS6450518A (en) 1989-02-27
JPH0261136B2 JPH0261136B2 (en) 1990-12-19

Family

ID=16544958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20775287A Granted JPS6450518A (en) 1987-08-21 1987-08-21 Apparatus for liquid growth of semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS6450518A (en)

Also Published As

Publication number Publication date
JPH0261136B2 (en) 1990-12-19

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