JPH0358521B2 - - Google Patents
Info
- Publication number
- JPH0358521B2 JPH0358521B2 JP17568084A JP17568084A JPH0358521B2 JP H0358521 B2 JPH0358521 B2 JP H0358521B2 JP 17568084 A JP17568084 A JP 17568084A JP 17568084 A JP17568084 A JP 17568084A JP H0358521 B2 JPH0358521 B2 JP H0358521B2
- Authority
- JP
- Japan
- Prior art keywords
- magneto
- optical
- heusler
- effect
- ternary alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 230000005415 magnetization Effects 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- 229910052771 Terbium Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 description 12
- 229910002058 ternary alloy Inorganic materials 0.000 description 9
- 230000015654 memory Effects 0.000 description 8
- 229910001291 heusler alloy Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 101100264195 Caenorhabditis elegans app-1 gene Proteins 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、Mnを含むホイスラー系合金薄膜
で膜面と垂直方向に磁化容易軸を有する光磁気記
録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magneto-optical recording medium that is a Heusler alloy thin film containing Mn and has an axis of easy magnetization perpendicular to the film surface.
従来光磁気記録媒体（光磁気メモリー）は多く
の材料が知られているがMn元素を主体としたホ
イスラー系合金が光磁気力−効果が大きく光磁気
メモリーとして知られていた。例えば文献〔１〕
P.G.Van Engen、K.H.J.Buschow、andr.
Jongebereur、App1、Phys.Lett.42(2)、
15January、202（1983）．文献〔２〕K.H.J.
BUSCHOW、P.G.Van.ENGENandD.B.
deMOOIJ、J.Magn.Magn.Mat.40（1984）339−
347、特開昭59−63041号公報、又ホイスラー合金
についての一般の解読書として磁性体ハンドブツ
クp372−p375（1975）朝倉書店出版等にこのよう
な従来の光磁気メモリーに関して開示されてい
る。
Although many materials have been known for conventional magneto-optical recording media (magneto-optical memory), Heusler alloys mainly containing the Mn element have been known as magneto-optical memories due to their large magneto-optical force effect. For example, literature [1]
PGVan Engen, KHJBuschow, andr.
Jongebereur, App1, Phys.Lett.42(2),
15January, 202 (1983). Literature [2] KHJ
BUSCHOW, PGVan.ENGENandD.B.
deMOOIJ, J.Magn.Magn.Mat.40 (1984) 339−
347, Japanese Unexamined Patent Publication No. 59-63041, and a general interpretation book on Heusler alloys, such as Magnetic Handbook p372-p375 (1975) Asakura Shoten Publishing, etc., disclose such conventional magneto-optical memories.
しかし従来のホイスラー系合金は光磁気効果
（カー効果、フアラデー効果等）が十分大きく無
いために光磁気デイスクにおいて読出し信号であ
るＣ／Ｎ比が小さい欠点があつた。
However, conventional Heusler-based alloys have the disadvantage that the magneto-optical effect (Kerr effect, Faraday effect, etc.) is not large enough, and therefore the C/N ratio, which is the readout signal in the magneto-optical disk, is small.
そこでこの発明は従来のこのような欠点を解決
するため光磁気効果を十分大きくし読出し特性の
優れた光磁気メモリーを得ることを目的としてい
る。 SUMMARY OF THE INVENTION In order to overcome these conventional drawbacks, the present invention aims to provide a magneto-optical memory with a sufficiently large magneto-optical effect and excellent read characteristics.
上記問題点を解決するためにこの発明は従来の
Mnを含むホイスラー系三元合金に更に添加元素
を加えることによつて光磁気効果（特に力−効
果）を大きくするように改良をした。
In order to solve the above problems, this invention
We improved the Heusler-based ternary alloy containing Mn by adding additional elements to increase the magneto-optical effect (particularly the force effect).
上記のようにMnを含むホイスラー系三元合金
磁性薄膜は一般に多結晶で面内磁化方向であるが
第４元素の添加によつて多結晶がアンモルフアス
化することが可能であり又垂直磁化膜にすること
も可能である。そして垂直磁化膜とした本発明合
金は光磁気記録媒体としてレーザー光によりスポ
ツト状の反転磁区を作ることが出来る。これを利
用することによつて情報を記録することが可能で
あり、書換可能な光磁気のデイスク、テープ、シ
ート、ドラムに応用できる。そしてこのスポツト
を読出す方法として磁気光学効果を利用するが、
特に光磁気力−効果が重要で大きな力一回転角が
必要となつている。この力一回転角（θk）を大
きくするために本発明は第４添加元素を加えるこ
とを見い出した。第２図は従来から知られている
ホイスラー３元合金、（K3-XMoXL）についてＸと
θkの関係について代表的な例を示した物である。
Ｋ、Ｌについては特許請求範囲に示した元素であ
る。第１図は第２図のホイスラー３元合金に更に
第４元素としての添加元素を加えた場合であり、
いずれも第２図に比較してθkが大きく改良され
ていることがわかる。従来のホイスラー３元合金
についてMn量Ｘはθkが大きく約0.5°以上の組成
として0.4＜Ｘ＜2.2が適当である。又第４元素の
添加元素は0.05＜Ｙ＜0.3でθkアツプの効果が現
われている。
As mentioned above, Heusler-based ternary alloy magnetic thin films containing Mn are generally polycrystalline and have in-plane magnetization, but by adding a fourth element, the polycrystals can be made amorphous and can also be perpendicularly magnetized. It is also possible to do so. The alloy of the present invention formed into a perpendicularly magnetized film can be used as a magneto-optical recording medium to produce spot-like reversed magnetic domains using a laser beam. By using this, it is possible to record information, and it can be applied to rewritable magneto-optical disks, tapes, sheets, and drums. The magneto-optical effect is used as a method to read out this spot.
In particular, the magneto-optical force effect is important, and a large force/rotation angle is required. In order to increase this force-to-rotation angle (θk), the present invention has discovered that a fourth additive element is added. FIG. 2 shows a typical example of the relationship between X and θk for the conventionally known Heusler ternary alloy (K 3 -XMoXL ).
K and L are the elements shown in the claims. Figure 1 shows the case where an additional element as a fourth element is further added to the Heusler ternary alloy shown in Figure 2.
In both cases, it can be seen that θk has been greatly improved compared to FIG. For the conventional Heusler ternary alloy, the Mn content X is suitably 0.4<X<2.2 as long as θk is large and the composition is about 0.5° or more. Further, the effect of increasing θk appears when the additive element of the fourth element is 0.05<Y<0.3.
以下この発明の実施例にもとづいて説明する。 Embodiments of the present invention will be explained below.
ホイスラー３元合金は従来より知られているも
のが多いが本発明の垂直磁化膜を得るためにスパ
ツター法、真空蒸着法、イオンプレーテイング
法、その他多くの物理的ベイパーデポジシヨン法
によつて作製することができる。例えば、スパツ
タ法による場合ターゲツト組成は溶解法、粉末焼
結等によつて作製し、又添加元素等はターゲツト
の上にチツプとして乗せその枚数で組成の濃度を
変化させる。そして基板はガラス、PMMA、PC
等の透明プラスチツクを用いその上に光磁気メモ
リー膜（本発明膜）を50Å〜数μの膜厚を作製す
る。この試料のθkはレザー光（He−Ne、LD）
によつて回転角測定器で測定する。その結果が第
１図、第２図である。図中には代表的な例を示し
たにすぎないが、本発明中のＭは特許請求範囲に
示した元素で効果がある。又Ｍの組合せとしても
効果はあがる。又スパツター等で作製する場合、
作製条件によつてはアモルフアス膜も得ることが
出来る。このようにホイスラー３元合金に第４元
素を加えることによつてθkが大きく改良出来、
更にアモフアス化することが出来るので光磁気メ
モリーとして最良のメモリーが得られる。 Many Heusler ternary alloys have been known in the past, but in order to obtain the perpendicular magnetization film of the present invention, they can be produced by sputtering, vacuum evaporation, ion plating, and many other physical vapor deposition methods. can do. For example, when using the sputtering method, the target composition is prepared by a melting method, powder sintering, etc., and additional elements are placed on the target as chips, and the concentration of the composition is changed depending on the number of chips. And the substrate is glass, PMMA, PC
A magneto-optical memory film (film of the present invention) with a thickness of 50 Å to several μm is formed on the transparent plastic. θk of this sample is laser light (He−Ne, LD)
Measure with a rotation angle measuring device. The results are shown in FIGS. 1 and 2. Although only a typical example is shown in the figure, M in the present invention is an element shown in the claims and is effective. Also, the effect can be improved by combining M. Also, when making with a sputter etc.
Depending on the manufacturing conditions, an amorphous film can also be obtained. By adding a fourth element to the Heusler ternary alloy in this way, θk can be greatly improved.
Furthermore, since it can be made amorphous, the best memory can be obtained as a magneto-optical memory.
この発明は以上説明したように従来のMn含有
のホイスラー系３元合金について第２図に示した
ようにθkが大きい0.5以上を示すMnの組成Ｘが
0.4＜Ｘ＜2.2の範囲において、第４元素添加によ
つて更にθkを向上せしめたものでありこの添加
量は0.05＜Ｙ＜0.3である。
As explained above, this invention is based on the conventional Mn-containing Heusler ternary alloy whose Mn composition X exhibits a large θk of 0.5 or more as shown in Figure 2.
In the range of 0.4<X<2.2, θk is further improved by adding a fourth element, and the amount of addition is 0.05<Y<0.3.
この代表組成の例を第１図に示してある。この
ようにθkを大きくすることによつて光磁気読出
しが大きくなるため優れたＣ／Ｍ比を持つ光磁気
メモリー媒体が可能となつた。 An example of this typical composition is shown in FIG. By increasing θk in this way, the magneto-optical readout becomes large, making it possible to provide a magneto-optical memory medium with an excellent C/M ratio.
第１図はこの発明にかかる（K3-XMoXL）1-YMY
の代表例を示す。すなわちＫ＝Pt、Ni、Pd、
Rh、Cu、Ｌ＝Sb、Sn、As、In、Ga、の例につ
いてのθkと組成の関係を示す。第２図は従来か
ら知られているホイスラー３元合金の代表例であ
る材料についてMnの量Ｘとθkの関係を示す。
Figure 1 shows this invention (K 3-XMoXL ) 1-Y MY
A typical example is shown below. That is, K=Pt, Ni, Pd,
The relationship between θk and composition for examples of Rh, Cu, L=Sb, Sn, As, In, and Ga is shown. FIG. 2 shows the relationship between the amount of Mn, X, and θk for a material that is a typical example of a conventionally known Heusler ternary alloy.
Claims (1)
の一般式（K3-xMnxL）1-YMYで示される組成を有
する薄膜光磁気記録媒体。 ここにＫはPt、Pd、Au、Rh、Fe、Co、Ni、
Cu、の一種の元素である。 ＬはAl、Ga、In、Si、Ge、Sn、As、Sbの一
種の元素である。 ＭはＳ、Se、Te、Ｐ、Bi、Pb、Ｂ、Tl、Zn、
Cd、Ag、Cr、Mo、Ｗ、Ｖ、Nb、Ta、Ti、Zr、
Hf、Sc、Ｙ、Nd、Sm、Tb、Ybの一種以上の
元素である。 Ｘは0.4＜Ｘ＜2.2、Ｙは0.05＜Ｙ＜0.3である。[Claims] 1. A thin film magneto-optical recording medium having a composition represented by the general formula (K 3-x MnxL) 1-YMY of an alloy having an axis of easy magnetization in a direction perpendicular to the film surface. Here K is Pt, Pd, Au, Rh, Fe, Co, Ni,
Cu is a type of element. L is an element of Al, Ga, In, Si, Ge, Sn, As, and Sb. M is S, Se, Te, P, Bi, Pb, B, Tl, Zn,
Cd, Ag, Cr, Mo, W, V, Nb, Ta, Ti, Zr,
It is one or more elements of Hf, Sc, Y, Nd, Sm, Tb, and Yb. X is 0.4<X<2.2, and Y is 0.05<Y<0.3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17568084A JPS6153702A (en) | 1984-08-23 | 1984-08-23 | Photomagnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17568084A JPS6153702A (en) | 1984-08-23 | 1984-08-23 | Photomagnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6153702A JPS6153702A (en) | 1986-03-17 |
| JPH0358521B2 true JPH0358521B2 (en) | 1991-09-05 |
Family
ID=16000353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17568084A Granted JPS6153702A (en) | 1984-08-23 | 1984-08-23 | Photomagnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6153702A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7142809B1 (en) | 2001-02-27 | 2006-11-28 | The Directv Group, Inc. | Device and method to locally fill gaps in spotbeam satellite systems with frequency re-use |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0770095B2 (en) * | 1986-08-11 | 1995-07-31 | 日本電信電話株式会社 | Magneto-optical recording medium |
-
1984
- 1984-08-23 JP JP17568084A patent/JPS6153702A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7142809B1 (en) | 2001-02-27 | 2006-11-28 | The Directv Group, Inc. | Device and method to locally fill gaps in spotbeam satellite systems with frequency re-use |
| US7308230B2 (en) | 2001-02-27 | 2007-12-11 | The Directv Group, Inc. | Device and method to locally fill gaps in spotbeam satellite systems with frequency re-use |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6153702A (en) | 1986-03-17 |
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