JPH0360060A - Lead repossessing mold for semiconductor device - Google Patents
Lead repossessing mold for semiconductor deviceInfo
- Publication number
- JPH0360060A JPH0360060A JP1196166A JP19616689A JPH0360060A JP H0360060 A JPH0360060 A JP H0360060A JP 1196166 A JP1196166 A JP 1196166A JP 19616689 A JP19616689 A JP 19616689A JP H0360060 A JPH0360060 A JP H0360060A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- mold
- semiconductor device
- ceramic
- bending mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
Landscapes
- Wire Processing (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体装置のリード加工金型、特にJ型リ
ードを成形する半導体装置のリード加工金型の改良に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lead processing mold for a semiconductor device, particularly to an improvement of a lead processing mold for a semiconductor device for forming a J-shaped lead.
第2図a % Cは従来の半導体装置がリード加工され
る状態を示す図である0図において、1は樹脂封止され
た半導体装置、2はこの半導体装置1の側面から導出さ
れて、表面部に半田めっきが施され、外部と電気的に接
続されるリードであり、4は超硬の材質よりなる超硬曲
げ金型、5はこの超硬曲げ金型4の向火側の上面側に形
成され、半導体装置1を内包させる支持凹部、6はこの
支持凹部5の哉面に設けられ、鏡面仕上が施されており
、リード2をJ型に屈曲させるためのJ型曲面、7は超
硬曲げ金型4の周辺部の受圧部である。8はリード2を
クランプするためのストリッパーで、その下面側内央部
に半導体装置1の上面側に対応する形状の凹部が形成さ
れており、その周辺部の超硬曲げ金型4の受圧部7に対
向した位置に押圧部9を有し、上下方向に動き得るよう
になされている9以上のような超硬曲げ金型4とストリ
ッパー8とから半導体装置1のリード2をJ型に加工す
るリード加工金型(以下、金型と称す)が構成されてい
る。Figure 2 a % C is a diagram showing a state in which a conventional semiconductor device is processed into leads. 4 is a carbide bending mold made of a carbide material, and 5 is the upper surface of the carbide bending mold 4 on the fire-directing side. A support recess 6 is provided on the outer surface of the support recess 5 to enclose the semiconductor device 1, and is mirror-finished, and a J-shaped curved surface 7 for bending the lead 2 into a J-shape. This is a pressure receiving part around the periphery of the carbide bending die 4. Reference numeral 8 denotes a stripper for clamping the lead 2, and a concave portion having a shape corresponding to the top surface side of the semiconductor device 1 is formed in the inner center portion of the lower surface side of the stripper, and a pressure receiving portion of the carbide bending mold 4 in the peripheral portion thereof. A lead 2 of a semiconductor device 1 is processed into a J shape using a stripper 8 and a carbide bending die 4 such as 9 or above, which has a pressing part 9 at a position opposite to 7 and is movable in the vertical direction. A lead processing mold (hereinafter referred to as a mold) is constructed.
次に、成形工程について説明する。第2図aに示すよう
に、あらかじめリード2が所定形状に成形されている半
導体装置1を、超硬曲げ金型4上にセットする。このと
き2半導体装置1が超硬曲げ金型4のほぼ中央部に位置
し、リード2がJ型曲面6に対向するように位置決めさ
れる0次いで、ストリッパー8を下降させ、半導体装置
1の上面側がストリッパー8の凹部に当接された状態と
なし、さらに、ストリッパー8を下降させることにより
、第2図すに示すように、超硬曲げ金型4の受圧部7と
ストリッパー8の押圧部9とを当接した状態にする。こ
れにより、ストリッパー8の凹部の一部とJ型曲面6と
でリード2がクランプされ、さらに押圧されることによ
って、リード2は超硬曲げ金型4の上で押し付けられ、
超硬曲げ金型4表面にこすられながら成形される。リー
ド成形後は、第2図Cに示すように、ストリッパー8が
上昇し、超硬曲げ金型4から離間される。この後、超硬
曲げ金型4からリード2の成形を完了した半導体装置1
を取り出すことによって成形工程が終了する。Next, the molding process will be explained. As shown in FIG. 2a, the semiconductor device 1, on which the leads 2 have been previously formed into a predetermined shape, is set on a carbide bending mold 4. As shown in FIG. At this time, the semiconductor device 1 is positioned approximately at the center of the cemented carbide bending mold 4, and the leads 2 are positioned so as to face the J-shaped curved surface 6. Next, the stripper 8 is lowered, and the upper surface of the semiconductor device 1 is By bringing the side into contact with the concave portion of the stripper 8 and further lowering the stripper 8, as shown in FIG. and are in contact with each other. As a result, the lead 2 is clamped by a part of the recess of the stripper 8 and the J-shaped curved surface 6, and by being further pressed, the lead 2 is pressed onto the carbide bending die 4.
It is molded while being rubbed against the surface of the carbide bending mold 4. After lead forming, the stripper 8 is raised and separated from the carbide bending die 4, as shown in FIG. 2C. After that, the semiconductor device 1 after forming the leads 2 from the carbide bending mold 4 is completed.
The molding process is completed by taking out.
従来の金型は以上のように構成されており、J型リード
に成形の際、超硬曲げ金型4が超硬よりなっているため
、そのJ型曲面6の表面とリード2の表面との接触によ
る大きな摩擦が生じる。このため、リード2の表面を覆
う半田めっきが剥がれて、J型開面5の表面にリード2
の表面を覆う半田めっきが付着し、その付着物によって
、リード2の表面に傷が付けられたり、リード2の変形
が生じたりし、半導体装置1の信頼性が損なわれてしま
うという問題点があった。The conventional mold is constructed as described above, and when forming a J-shaped lead, since the carbide bending mold 4 is made of carbide, the surface of the J-shaped curved surface 6 and the surface of the lead 2 are A large amount of friction occurs due to the contact between the two. As a result, the solder plating covering the surface of the lead 2 is peeled off and the lead 2 is exposed to the surface of the J-shaped opening 5.
The problem is that the solder plating that covers the surface of the semiconductor device 1 is deposited, and the deposits damage the surface of the leads 2 or deform the leads 2, impairing the reliability of the semiconductor device 1. there were.
この発明は上記のような問題点を解消するためになされ
たもので、リード成形の際に、金型表面へのリード表面
の半田めっきの付着が防止でき、リードが正常な状態に
成形できる金型を得ることを目的とする。This invention was made in order to solve the above-mentioned problems, and it is possible to prevent the adhesion of solder plating on the lead surface to the mold surface during lead molding, and to form a molded lead in a normal state. The purpose is to obtain a type.
この発明に係る半導体装置の金型は、外部にリードを導
出させた半導体装置を内在させ、上記リードをJ型に屈
曲させるべき凹部が設けられている金型において、上記
金型をセラミック材料で形成したものである。A mold for a semiconductor device according to the present invention includes a semiconductor device with leads extending outside and is provided with a recess for bending the lead into a J shape, and the mold is made of a ceramic material. It was formed.
この発明におけるセラミック材料は、表面潤滑性、非粘
着性が非常に優れていることにより、金型表面とリード
表面の間の摩擦が緩和され、金型表面へのリード表面を
覆う半田めっきの付着を防止する作用がある。The ceramic material used in this invention has excellent surface lubricity and non-adhesiveness, which reduces friction between the mold surface and the lead surface, and prevents the adhesion of solder plating covering the lead surface to the mold surface. It has the effect of preventing
以下この発明の一実施例を第1図について説明する。第
1図は半導体装置がリード加工される状態を示す図(第
2図すに対応する図)であり、図において、第2図と同
一部分または相当部分には同一符号を付する。3はセラ
ミック曲げ金型であり、第2図に示すものと異なる点は
、セラミック曲げ金型3がセラミック材料で形成されて
いる点である。An embodiment of the present invention will be described below with reference to FIG. FIG. 1 is a diagram (corresponding to FIG. 2) showing a state in which a semiconductor device is subjected to lead processing, and in the diagram, the same or corresponding parts as in FIG. 2 are given the same reference numerals. Reference numeral 3 denotes a ceramic bending die, which differs from the one shown in FIG. 2 in that the ceramic bending die 3 is made of a ceramic material.
次に、この成形工程について説明する。成形工程自体は
第2図に示すものと同じである。まず、図示省略しであ
るが、第2図aに示すと同じように開状態となっている
セラミック曲げ金型3.ストリッパー8の間に半導体装
置1が移送されてきて、位置決めされる。Next, this molding process will be explained. The molding process itself is the same as that shown in FIG. First, although not shown, a ceramic bending die 3. The semiconductor device 1 is transferred between the strippers 8 and positioned.
次いで、第1図に示すように、ストリッパー8が下降し
て半導体装置1のリード2部をクランプし、セラミック
曲げ金型3に当接される。これによって、リード2がセ
ラミック曲げ金型3に押し付けられて、その支持部5に
形成されているJ型曲面6に沿ってリード2の中央部か
ら先端部にわたり、所定曲率を有するJ型に屈曲される
。Next, as shown in FIG. 1, the stripper 8 descends to clamp the lead 2 portion of the semiconductor device 1 and is brought into contact with the ceramic bending mold 3. As a result, the lead 2 is pressed against the ceramic bending mold 3 and bent into a J-shape having a predetermined curvature from the center to the tip of the lead 2 along the J-shaped curved surface 6 formed on the support part 5. be done.
ここで、セラミック曲げ金型3は、超硬曲げ金型4に対
し、表面潤滑性、非粘着性が非常に優れたものであるた
め、リード2がセラミック曲げ金型3表面にこすられな
がら成形されても、リード2とセラミック曲げ金型3表
面の間の摩擦が極めて小さくなる。これにより、リード
2の表面を覆う半田めっきが剥がれず、セラミック曲げ
金型3表面へのリード2の表面を覆う半田めっきの付着
が防止できる。Here, since the ceramic bending die 3 has extremely superior surface lubricity and non-adhesiveness compared to the carbide bending die 4, the lead 2 is molded while being rubbed against the surface of the ceramic bending die 3. Even if the lead 2 is bent, the friction between the lead 2 and the surface of the ceramic bending mold 3 becomes extremely small. As a result, the solder plating covering the surface of the lead 2 does not peel off, and adhesion of the solder plating covering the surface of the lead 2 to the surface of the ceramic bending mold 3 can be prevented.
さらに図示省略しであるが、第2図Cに示すと同じよう
に、ストリッパー8が上昇し、セラミック曲げ金型3か
ら離間される。この後、セラミック曲げ金型3からリー
ド2の成形を完了した半導体装置1を取り出すことによ
って成形工程が終了する。Furthermore, although not shown, the stripper 8 is raised and separated from the ceramic bending die 3 in the same way as shown in FIG. 2C. Thereafter, the semiconductor device 1 with the leads 2 formed is taken out from the ceramic bending mold 3, thereby completing the molding process.
このように成形が行われるため、リード2が正常な形状
のものにできて、高信頼度の半導体装置1が得られる。Since the molding is performed in this manner, the leads 2 can be formed into a normal shape, and a highly reliable semiconductor device 1 can be obtained.
以上のようにこの発明によれば、金型をセラミック材料
で形成したので、リードが正常な状態に成形できて、高
信頼度の半導体装置が得られる効果がある。As described above, according to the present invention, since the mold is made of a ceramic material, the leads can be molded in a normal state, and a highly reliable semiconductor device can be obtained.
第1図はこの発明の一実施例によるリード加工金型を用
いて半導体装置のリードが加工される状態を示す図、第
2図a ’% Cは従来のリード加工金型を用いて半導
体装置のリードが加工される状態を示す図である。
図中、1は半導体装置、2はリード、3はセラミック曲
げ金型、6はJ型曲面、8はストリッパーである。
なお、図中同一符号は同−又は相当部分を示す。FIG. 1 is a diagram showing how leads of a semiconductor device are processed using a lead processing mold according to an embodiment of the present invention, and FIG. FIG. In the figure, 1 is a semiconductor device, 2 is a lead, 3 is a ceramic bending mold, 6 is a J-shaped curved surface, and 8 is a stripper. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
リードをJ型に屈曲させるべき凹部が設けられているリ
ード加工金型において、上記リード加工金型をセラミッ
ク材料で構成したことを特徴とする半導体装置のリード
加工金型。A lead processing mold which houses a semiconductor device with leads extending outside and is provided with a recess for bending the leads into a J-shape, characterized in that the lead processing mold is made of a ceramic material. Lead processing mold for semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1196166A JPH0360060A (en) | 1989-07-27 | 1989-07-27 | Lead repossessing mold for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1196166A JPH0360060A (en) | 1989-07-27 | 1989-07-27 | Lead repossessing mold for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0360060A true JPH0360060A (en) | 1991-03-15 |
Family
ID=16353307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1196166A Pending JPH0360060A (en) | 1989-07-27 | 1989-07-27 | Lead repossessing mold for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0360060A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9021866B2 (en) | 2011-10-11 | 2015-05-05 | Gl Sciences Incorporated | Gas leak detector |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62171148A (en) * | 1986-01-23 | 1987-07-28 | Oki Electric Ind Co Ltd | Manufacture of chip carrier type ic |
-
1989
- 1989-07-27 JP JP1196166A patent/JPH0360060A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62171148A (en) * | 1986-01-23 | 1987-07-28 | Oki Electric Ind Co Ltd | Manufacture of chip carrier type ic |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9021866B2 (en) | 2011-10-11 | 2015-05-05 | Gl Sciences Incorporated | Gas leak detector |
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