JPH0360182A - Substrate for wiring board - Google Patents
Substrate for wiring boardInfo
- Publication number
- JPH0360182A JPH0360182A JP19713189A JP19713189A JPH0360182A JP H0360182 A JPH0360182 A JP H0360182A JP 19713189 A JP19713189 A JP 19713189A JP 19713189 A JP19713189 A JP 19713189A JP H0360182 A JPH0360182 A JP H0360182A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- polyimide
- polyimide resin
- precursor
- varnish
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 20
- 229920001721 polyimide Polymers 0.000 claims abstract description 83
- 239000009719 polyimide resin Substances 0.000 claims abstract description 61
- 239000011888 foil Substances 0.000 claims abstract description 26
- 239000000126 substance Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000010030 laminating Methods 0.000 claims description 3
- 239000002243 precursor Substances 0.000 abstract description 22
- 239000011347 resin Substances 0.000 abstract description 17
- 229920005989 resin Polymers 0.000 abstract description 17
- 239000002966 varnish Substances 0.000 abstract description 17
- 239000004642 Polyimide Substances 0.000 abstract description 16
- 239000002904 solvent Substances 0.000 abstract description 14
- 238000010438 heat treatment Methods 0.000 abstract description 11
- 238000001035 drying Methods 0.000 abstract description 5
- 150000003949 imides Chemical class 0.000 abstract 2
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 21
- 238000000034 method Methods 0.000 description 13
- 229920005575 poly(amic acid) Polymers 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 239000002253 acid Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 7
- 239000002313 adhesive film Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- -1 1-methylethylidene Chemical group 0.000 description 5
- 229930185605 Bisphenol Natural products 0.000 description 5
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- YYROPELSRYBVMQ-UHFFFAOYSA-N 4-toluenesulfonyl chloride Chemical compound CC1=CC=C(S(Cl)(=O)=O)C=C1 YYROPELSRYBVMQ-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000006068 polycondensation reaction Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000004760 aramid Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 229920006231 aramid fiber Polymers 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 125000005462 imide group Chemical group 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- HVLLSGMXQDNUAL-UHFFFAOYSA-N triphenyl phosphite Chemical compound C=1C=CC=CC=1OP(OC=1C=CC=CC=1)OC1=CC=CC=C1 HVLLSGMXQDNUAL-UHFFFAOYSA-N 0.000 description 2
- 239000002759 woven fabric Substances 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- NOGFHTGYPKWWRX-UHFFFAOYSA-N 2,2,6,6-tetramethyloxan-4-one Chemical compound CC1(C)CC(=O)CC(C)(C)O1 NOGFHTGYPKWWRX-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ISPYQTSUDJAMAB-UHFFFAOYSA-N 2-chlorophenol Chemical compound OC1=CC=CC=C1Cl ISPYQTSUDJAMAB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- QOSSAOTZNIDXMA-UHFFFAOYSA-N Dicylcohexylcarbodiimide Chemical compound C1CCCCC1N=C=NC1CCCCC1 QOSSAOTZNIDXMA-UHFFFAOYSA-N 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000003927 aminopyridines Chemical class 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- WYVAMUWZEOHJOQ-UHFFFAOYSA-N propionic anhydride Chemical compound CCC(=O)OC(=O)CC WYVAMUWZEOHJOQ-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- 210000001364 upper extremity Anatomy 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は耐溶剤性、耐熱性に優れた配線板用基板に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a wiring board substrate having excellent solvent resistance and heat resistance.
プリント配線板は様々な機器において電子部品の搭載、
接続に用いられている。フレキシブルプリント配線板(
FPC)はポリイミドフィルムと金属箔とを接着剤で貼
り合わせたものである。従来、接着剤としてエポキシ樹
脂中やアクリルゴムなと耐熱性の低い樹脂が用いられて
いたため、ポリイミドフィルムの耐熱性を生かすことが
できず、高温での使用が制限されていた。この問題を解
決するため、特開昭57−181857号公報、特開昭
57−63254号公報、特開昭61−55177号公
報、特開昭62−275181号公報で示されるように
、熱可塑性のポリイミドを接着剤としてポリイミドフィ
ルムと金属箔とを接着してなる配線板用基板が提案され
ている。Printed wiring boards are used to mount electronic components in various devices.
Used for connection. Flexible printed wiring board (
FPC) is made by bonding a polyimide film and metal foil together with an adhesive. Conventionally, resins with low heat resistance such as epoxy resins and acrylic rubber have been used as adhesives, making it impossible to take advantage of the heat resistance of polyimide films and limiting their use at high temperatures. In order to solve this problem, thermoplastic A wiring board substrate has been proposed in which a polyimide film and a metal foil are bonded together using polyimide as an adhesive.
特開昭57−181857号公報、特開昭57−632
54号公報、特開昭61−55177号公報では接着剤
としてポリイミドを用いているため耐熱性は優れている
が、使用されるポリイミドの軟化点が高いため320℃
以上の接着温度が必要である。このため耐熱性の低い材
料の接着には用いることができないという欠点があった
。JP-A-57-181857, JP-A-57-632
No. 54 and JP-A No. 61-55177 use polyimide as an adhesive, so they have excellent heat resistance;
A bonding temperature higher than that is required. For this reason, it has the disadvantage that it cannot be used to bond materials with low heat resistance.
特開昭62−275181号公報に示されるポリイミド
は軟化点が低いため230〜350℃での接着が可能で
あるが、このポリイミドは配線形成の際用いられる塩化
メチレンなどの溶剤に溶解するため。The polyimide disclosed in JP-A-62-275181 has a low softening point and can be bonded at 230 to 350°C, but this polyimide is soluble in a solvent such as methylene chloride used for wiring formation.
耐溶剤性が悪いという配線板用基板として重大な欠点が
あった。It had a serious drawback as a wiring board substrate: poor solvent resistance.
本発明は、低温で成形でき、耐溶剤性、耐熱性が優れた
配線板用基板を提供するものである。The present invention provides a wiring board substrate that can be molded at low temperatures and has excellent solvent resistance and heat resistance.
本発明は、
金属箔及び一般式(I)
又は、式(b)
を示す)?表わされる繰り返し単位を有するポリイミド
樹脂を含む絶縁層を積層してなる配線板用基板に関する
。The present invention provides a metal foil and general formula (I) or (b)? The present invention relates to a wiring board substrate formed by laminating insulating layers containing a polyimide resin having the repeating unit shown below.
上記配線板用基板には、さらに、支持体を積層すること
ができる。A support body can further be laminated on the wiring board substrate.
本発明の配線板用基板は、金属箔に前記一般式(1)で
表わされるポリイミド樹脂の前駆体を含むワニスを流延
塗布し乾燥することによって又は金属箔と上記ポリイミ
ド樹脂又はその前駆体を含むフィルムを加熱圧着するこ
とによって得ることができ、また、上記ポリイミド樹脂
又はその前駆体を含む接着剤を用いて、金属箔と支持体
を接着することにより得ることができる。The wiring board substrate of the present invention can be produced by casting a varnish containing a precursor of the polyimide resin represented by the general formula (1) on a metal foil and drying it, or by combining the metal foil and the polyimide resin or its precursor. It can be obtained by heat-pressing a film containing the polyimide resin, or by bonding a metal foil and a support using an adhesive containing the polyimide resin or its precursor.
本発明の配線板用基板において、金属箔として銅、アル
ミニウム、鉄などがあり、支持体としてはポリイミド、
ポリアミドイミド、ポリエステルイミド、ポリエーテル
イミドなどのポリイミド系フィルム、アラミドフィルム
、銅板、鋼板、アルミニウム板、銅−インバー銅板、セ
ラミック板などがある。In the wiring board substrate of the present invention, the metal foil may be copper, aluminum, iron, etc., and the support may be polyimide,
Examples include polyimide films such as polyamideimide, polyesterimide, and polyetherimide, aramid films, copper plates, steel plates, aluminum plates, copper-invar copper plates, and ceramic plates.
上記ポリイミド樹脂及びその前駆体について、説明する
。The above polyimide resin and its precursor will be explained.
上記ポリイミド樹脂は、好ましくは軟化点が130〜1
80℃のものである。軟化点が低すぎるとポリイミド樹
脂の物性が低下しやすくなる。The polyimide resin preferably has a softening point of 130 to 1
It is at 80°C. If the softening point is too low, the physical properties of the polyimide resin tend to deteriorate.
上記ポリイミド樹脂の前駆体のうちポリアミド酸は、一
般式(U)
(ただし、式中、Rは一般式(1)に同じ)で表わされ
る繰り返し単位を有する。また、他の前駆体としては、
上記ポリアミド酸が部分的にイミド化されたものがある
。Among the precursors of the polyimide resin, polyamic acid has a repeating unit represented by the general formula (U) (wherein R is the same as in the general formula (1)). In addition, other precursors include
Some of the above polyamic acids are partially imidized.
本発明において、前記ポリイミド樹脂、前記ポリアミド
酸及び部分的にイミド化されたポリイミド前駆体を総称
してポリイミド系樹脂という。In the present invention, the polyimide resin, the polyamic acid, and the partially imidized polyimide precursor are collectively referred to as a polyimide resin.
上記ポリイミド系樹脂は、4.4’ −[1,4−ブエ
ニレンビス(1−メチルエチリデン)〕ビスアニリン(
BAP)と4.4’ −(1,4−フェニレンビス(1
−メチフレエチリデン)〕 ビスフェニルビストリメリ
テートニ無水物(BAPBT)を反応させるか、4.4
’ −(1,3−)ユニしンビス(1−メチルエチリデ
ン)〕ビスアニリン(BAP)と4.4’ −(1,3
−)ユニしンビス(1−メチルエチリデン)〕ビスフェ
ニルビストリメリテートニ無水物(BAMBT)を反応
させることによって製造することができる。この場合、
ジアミンであるBAP又はBAMと酸二無水物であるB
APBT又はBAMBTとを適当な条件を選定して反応
させることにより、イミド化の度合を適宜調整すること
ができる。例えば、有機溶剤中、100℃以上特に18
0℃以上で、必要に応じ、トリブチルアミン、トリエチ
ルアミン。The above polyimide resin is 4.4'-[1,4-buenylenebis(1-methylethylidene)]bisaniline (
BAP) and 4.4'-(1,4-phenylenebis(1
4.4
'-(1,3-)unishinbis(1-methylethylidene)]bisaniline (BAP) and 4.4'-(1,3
-) Unishin bis(1-methylethylidene)] bisphenylbistrimellitate dianhydride (BAMBT). in this case,
BAP or BAM which is a diamine and B which is an acid dianhydride
By reacting APBT or BAMBT under appropriate conditions, the degree of imidization can be adjusted as appropriate. For example, in an organic solvent at 100°C or above, especially at 18°C.
At 0°C or higher, use tributylamine or triethylamine as necessary.
亜リン酸トリフェニル等の触媒の存在下に反応させるこ
とにより、はとんど完全にイミド化したポリイミド樹脂
を製造することができ(触媒は、反応成分の総量に対し
て0〜15重量%使用するのが好ましく、特に0.01
〜15重量%使用するのが好ましい)、有機溶剤中、1
00℃以下、特に50℃以下で反応させるとそのポリイ
ミド樹脂の前邪体であってほとんどイミド化されていな
いポリアミド酸を製造することができる。さらにイミド
化が部分的に進行したポリイミド樹脂前廃体を製造する
こともできる。By reacting in the presence of a catalyst such as triphenyl phosphite, almost completely imidized polyimide resins can be produced (the catalyst is used in an amount of 0 to 15% by weight based on the total amount of reaction components). It is preferred to use, especially 0.01
~15% by weight) in an organic solvent, 1
If the reaction is carried out at a temperature of 00°C or lower, especially 50°C or lower, a polyamic acid which is a precursor of the polyimide resin and is hardly imidized can be produced. Furthermore, it is also possible to produce a pre-waste polyimide resin in which imidization has partially progressed.
上記ポリアミド酸又はイミド化が部分的に進行したポリ
イミドの前腿体をさらに、100℃以上、特に120℃
以上加熱してイミド化するか、無水酢酸、無水プロピオ
ン酸、無水安息香酸等の酸無水物、ジシクロへキシルカ
ルボジイミド等のカルボジイミドなどの閉環剤、必要に
応じてピリジン。The foreleg body of the polyamic acid or partially imidized polyimide is further heated at 100°C or higher, particularly at 120°C.
Imidize by heating above, or use an acid anhydride such as acetic anhydride, propionic anhydride, benzoic anhydride, a ring-closing agent such as a carbodiimide such as dicyclohexylcarbodiimide, and optionally pyridine.
イソキノリン、トルメチルアミン、アミノピリジン、イ
ミダゾール等の閉環触媒を添加して化学閉環(イミド化
)させる方法(閉環剤及び閉環触媒は、それぞれ、酸無
水物1モルに対して1〜8モルの範囲内で使用するのが
好ましい)によって、ポリイミド樹脂を製造することが
できる。A method of chemically closing the ring (imidization) by adding a ring-closing catalyst such as isoquinoline, tolumethylamine, aminopyridine, imidazole, etc. (The ring-closing agent and the ring-closing catalyst are each in the range of 1 to 8 mol per 1 mol of acid anhydride. polyimide resins can be produced by using
前記有機溶剤としては、N−メチル−ピロリドン(NM
P)、N、N’ −ジメチルアセトアミド、N、N’−
ジメチルホルムアミド(DMF)、ジメチルスルホキシ
ド、スルホラン、ヘキサメチルリン酸トリアミド、1.
3−ジメチル−2−イミダゾリトン等の非プロトン性極
性溶媒、フェノール、クレゾール、キシレノール、P−
クロルフェノール等のフェノール系溶媒等が挙げられる
。As the organic solvent, N-methyl-pyrrolidone (NM
P), N, N'-dimethylacetamide, N, N'-
Dimethylformamide (DMF), dimethyl sulfoxide, sulfolane, hexamethyl phosphoric triamide, 1.
Aprotic polar solvents such as 3-dimethyl-2-imidazolitone, phenol, cresol, xylenol, P-
Examples include phenolic solvents such as chlorophenol.
これらの溶媒にベンゼン、トルエン、キシレン。These solvents include benzene, toluene, and xylene.
メチルエチルケトン、アセトン、テトラヒドロフラン、
ジオキサン、モノグライム、ジクライム。Methyl ethyl ketone, acetone, tetrahydrofuran,
Dioxane, monoglyme, diclyme.
メチルセロソルブ、セロソルブアセテート、メタノール
、エタノール、イソプロパツール、塩化メチレン、クロ
ロホルム、トリクレン、テトラクロロエタン等の溶媒を
混合して用いることができる。A mixture of solvents such as methyl cellosolve, cellosolve acetate, methanol, ethanol, isopropanol, methylene chloride, chloroform, trichlene, and tetrachloroethane can be used.
前記したポリイミド及びその前開体であるポリアミド酸
の製造に際し、場合により、固相反応、300℃以下で
の溶融反応等を利用することができる。When producing the above-mentioned polyimide and its pre-cleaved polyamic acid, solid phase reaction, melt reaction at 300° C. or lower, etc. can be used depending on the case.
上記ポリイミド樹脂は、ジアミンであるBAP又はBA
Mに対応するジイソシアネートと酸二無水物であるBA
PBT又はBAMBTを使用して一段で製造することが
できる。このとき、反応温度は室温以上、特に60℃以
上であれば充分である。The above polyimide resin is a diamine, BAP or BA.
BA which is a diisocyanate and acid dianhydride corresponding to M
It can be manufactured in one step using PBT or BAMBT. At this time, it is sufficient that the reaction temperature is at least room temperature, especially at least 60°C.
本発明において、酸二無水物とその反応の相手は、はぼ
等モルで用いるのが好ましいが、いずれか一方の過剰量
が10モル%、特に好ましくは5モル%までは許容され
る。In the present invention, the acid dianhydride and its reaction partner are preferably used in approximately equimolar amounts, but an excess of either one of them is allowed up to 10 mol%, particularly preferably up to 5 mol%.
以上において、酸二無水物は、そのジエステル等の酸誘
導体の形で使用してもよい。In the above, the acid dianhydride may be used in the form of an acid derivative such as its diester.
本発明で使用されるポリイミド樹脂は、また、N、N’
−(4,4’ −(1,4−フェニレンビス(l−メ
チルエチリデン)〕ビスアニリン〕ビストリメリットイ
ミド(以下「イミドジカルボン酸IJという)と4.4
’ −(1,4−フェニレンビス(1−メチルエチリデ
ン)〕 ビスフェノールを反応させるか、N、N’ −
(4,4’ −(1゜3−フェニレンビス(1−メチル
エチリデン)〕ビスアニリン)ビストリメリットイミド
(以下、「イミドジカルボン酸■」という)と4,4′
〔1,3−フェニレンビス(ニーメチルエチリデン)〕
ビスフェノールを反応させることによっても製造するこ
とができる。この場合、■上記イミドジカルボン酸■若
しくは■と上記ビスフェノールを加熱重縮合反応又は亜
リン酸エステル、トシルクロリド等の縮合剤を用いた直
接重縮合反応、■上記イミドジカルボン酸■若しくは■
のジ酸クロリドンと上記ビスフェノールとの低温重合反
応などを用いることができる。The polyimide resin used in the present invention also includes N, N'
-(4,4'-(1,4-phenylenebis(l-methylethylidene))bisaniline]bistrimeritimide (hereinafter referred to as "imidodicarboxylic acid IJ") and 4.4
' -(1,4-phenylenebis(1-methylethylidene))] React with bisphenol or N, N' -
(4,4'-(1゜3-phenylenebis(1-methylethylidene)]bisaniline)bistrimeritimide (hereinafter referred to as "imidodicarboxylic acid ■") and 4,4'
[1,3-phenylenebis(neemethylethylidene)]
It can also be produced by reacting bisphenol. In this case, ■ heat polycondensation reaction of the imidodicarboxylic acid ■ or ■ and the above bisphenol or direct polycondensation reaction using a condensing agent such as phosphite or tosyl chloride, ■ the above imidodicarboxylic acid ■ or ■
A low-temperature polymerization reaction between diacid chloridone and the above-mentioned bisphenol can be used.
■及び■の方法については通常のポリエステルの重縮合
法と同様にして行えば良い。なお、直接重縮合について
は上田充、高分子35(2)128(1986)、東福
次1日本接着協会誌、24(12)504(1988)
、高沢隆−他、 Polymerρreprints
Japan、1土(6)1345(1985)に述べら
れている。Methods (1) and (2) may be carried out in the same manner as the usual polyester polycondensation method. Regarding direct polycondensation, see Mitsuru Ueda, Kobunshi 35 (2) 128 (1986), Higashifukuji 1 Journal of Japan Adhesive Association, 24 (12) 504 (1988).
, Takashi Takazawa et al., Polymerρreprints
Japan, 1 Sat. (6) 1345 (1985).
また1本発明におけるポリイミド系樹脂は、無水トリメ
リット酸、BAP若しくはRAM及び前記ビスフェノー
ルをトシルクロリド等の縮合剤を用いて同一容器内で反
応させてポリアミド酸として製造することができ、さら
にこの後、加熱閉環又は化学閉環する方法によってポリ
イミドとして得ることができる。このような方法につい
ては。In addition, the polyimide resin in the present invention can be produced as a polyamic acid by reacting trimellitic anhydride, BAP or RAM, and the above-mentioned bisphenol in the same container using a condensing agent such as tosyl chloride. It can be obtained as a polyimide by a thermal ring-closing method or a chemical ring-closing method. For methods like this.
Hozumi Tanaka at al、、 Pro
ceedings/AbstrurctSof Th1
rd International Conferen
ce onPolyimide p 、 64 (19
88)に述べられている。Hozumi Tanaka at al,, Pro
ceedings/AbstractSof Th1
rd International Conference
ce on Polyimide p, 64 (19
88).
前記ポリイミド系樹脂の使用形態は、粉体状。The polyimide resin is used in powder form.
溶液状(前駆体の場合)、フィルム状等任意である。溶
液状で用いる場合は、ポリイミド系樹脂(前駆体)を前
記したような有機溶剤のうち適当なものを選択してこれ
に溶解させる。使用形態としては、取り扱いやすさから
フィルム状であるのが好ましい。It can be in any form such as a solution (in the case of a precursor) or a film. When used in the form of a solution, the polyimide resin (precursor) is dissolved in a suitable organic solvent selected from among the above-mentioned organic solvents. As for the form of use, it is preferably in the form of a film for ease of handling.
フィルム状の接着剤を作成するには、前記ポリイミド系
樹脂を前記したような有機溶剤のうち適当なものを選択
してこれに溶解させたもの(ワニス)をドラム、スチー
ルベルト、ガラス板、樹脂フィルム等の支持体上に流延
し、加熱して大部分の溶剤を除去して作成することがで
き、さらに、この後、作成されたフィルムを剥離し、自
己支持性のフイムルとすることができる。この場合、上
記ポリイミド系樹脂はポリアミド酸又は部分的にイミド
化された前駆体であるが、さらに加熱する方法、前記し
た閉環剤及び必要に応じ閉環触媒を溶解した溶液に上記
フィルムを浸漬する方法等により、これらをポリイミド
樹脂とすることができる。さらに、ポリイミド系樹脂が
ポリイミド樹脂である場合、該ポリイミド樹脂を溶融製
膜することによってフィルム状にすることができる。To create a film-like adhesive, the polyimide resin is dissolved in an appropriate organic solvent such as those mentioned above (varnish) and then placed on a drum, a steel belt, a glass plate, and the resin. It can be created by casting on a support such as a film and heating to remove most of the solvent, and then the created film can be peeled off to form a self-supporting film. can. In this case, the polyimide resin is a polyamic acid or a partially imidized precursor, and there is a method of further heating it, and a method of immersing the film in a solution in which the above-mentioned ring-closing agent and, if necessary, a ring-closing catalyst are dissolved. etc., these can be made into polyimide resins. Furthermore, when the polyimide resin is a polyimide resin, it can be made into a film by melting and forming the polyimide resin into a film.
さらに、ポリイミド系樹脂の使用形態は、ポリイミド系
樹脂をガラス繊維、炭素繊維、アラミド繊維等からなる
織布又は不織布に含浸させた形態のもの(プリプレグ)
でもよい。これらは、該織布又は不織布に前記したワニ
スを含浸、乾燥して作成される。この場合も、ポリイミ
ド系樹脂はポリアミド酸又は部分的にイミド化されたポ
リイミド前駆体であるが、前記した自己支持性のフィル
ムの場合と同様に、ポリイミド樹脂とすることができる
。Furthermore, polyimide resins are used in the form of impregnated woven or nonwoven fabrics made of glass fibers, carbon fibers, aramid fibers, etc. (prepreg).
But that's fine. These are made by impregnating the woven or nonwoven fabric with the varnish described above and drying it. In this case as well, the polyimide resin is a polyamic acid or a partially imidized polyimide precursor, but as in the case of the self-supporting film described above, the polyimide resin can be used.
本発明において、ポリイミド系樹脂としては。In the present invention, as the polyimide resin.
ボイドの発生の危険が少ない点からポリイミド樹脂を用
いるのが好ましい。It is preferable to use polyimide resin because there is less risk of void generation.
前記ポリイミド系樹脂には、アルミナなどのセラミック
、シリカ、ガラス、金属粉、ホイスカー炭素繊維、ガラ
ス繊維、アラミド繊維などの短繊維、フッ素樹脂粒、顔
料などが混合されていてもよい。また、接着性をさらに
向上させるためにシランやチタンなどのカップリング剤
が混合されていてもよい。The polyimide resin may be mixed with ceramics such as alumina, silica, glass, metal powder, short fibers such as whisker carbon fibers, glass fibers, aramid fibers, fluororesin particles, pigments, and the like. Further, a coupling agent such as silane or titanium may be mixed in order to further improve adhesiveness.
金属箔に前記ポリイミド樹脂を積層するには、金属箔に
前記ポリイミド樹脂の前駆体ワニスを流延塗布し乾燥す
る。このとき、溶剤を除去するのと同時に又はその後で
該前駆体が完全にイミド化する温度に加熱される。また
、金属箔と前記ポリイミド系樹脂のフィルム(プリプレ
グ)を加熱圧着することによっても得ることができる。In order to laminate the polyimide resin on the metal foil, a precursor varnish of the polyimide resin is cast onto the metal foil and dried. At this time, simultaneously with or after removing the solvent, the precursor is heated to a temperature at which it is completely imidized. It can also be obtained by heat-pressing a metal foil and a film (prepreg) of the polyimide resin.
この場合、ポリイミド系樹脂がポリイミド樹脂である場
合には、加熱温度は、該ポリイミド樹脂の軟化点以上と
され、ポリイミド系樹脂がその前駆体である場合には、
イミド化が完結するのに充分高い温度とされる。In this case, if the polyimide resin is a polyimide resin, the heating temperature is higher than the softening point of the polyimide resin, and if the polyimide resin is a precursor thereof,
The temperature is high enough to complete imidization.
金属箔と支持体の接着は、次のようにして行なうことが
できる。The metal foil and the support can be bonded as follows.
前記ポリイミド系樹脂がフィルム状のもの(プリプレグ
を含む)である場合、金属箔、ポリイミド系樹脂及び支
持体を順次積層し、加熱加圧する。When the polyimide resin is in the form of a film (including prepreg), the metal foil, the polyimide resin, and the support are sequentially laminated and heated and pressurized.
前記ポリイミド系樹脂(前駆体)がワニスである場合は
、該ワニスを金属箔又は支持体に流延塗布して、溶剤を
乾燥除去した後、支持体又は金属箔と積層し、加熱加圧
する。また、この場合、溶剤を乾燥除去するとき又はそ
の後に完全にイミド化を行なってもよい。When the polyimide resin (precursor) is a varnish, the varnish is cast onto a metal foil or a support, the solvent is dried and removed, and then the varnish is laminated with the support or metal foil and heated and pressed. Further, in this case, complete imidization may be carried out when or after drying and removing the solvent.
これらの場合において、ポリイミド系樹脂がポリイミド
樹脂である場合には、接着の際の加熱温度は、該ポリイ
ミド樹脂の軟化点以上とされ、ポリイミド系樹脂がその
前郭体である場合には、イミド化が完結するのに充分高
い温度とされる。In these cases, if the polyimide resin is a polyimide resin, the heating temperature during bonding is set to be above the softening point of the polyimide resin, and if the polyimide resin is the precursor, The temperature is high enough to complete the process.
以下、実施例により本発明の詳細な説明するが。 Hereinafter, the present invention will be explained in detail with reference to Examples.
本発明はこれらの範囲に限定されるものではない。The present invention is not limited to these ranges.
実施例1
撹拌装置、温度計、塩化カルシウム管、窒素ガス導入管
を備えた4つロフラスコにBAP34.4g。Example 1 34.4 g of BAP was placed in a four-loaf flask equipped with a stirrer, a thermometer, a calcium chloride tube, and a nitrogen gas introduction tube.
N、N−ジメチルホルムアミド415gを入れて溶解し
た後、5℃以下でBAPBT69.4g を少しずつ
加えた。10℃以下で3時間反応してポリアミド酸ワニ
スを得た。After 415 g of N,N-dimethylformamide was added and dissolved, 69.4 g of BAPBT was added little by little at a temperature below 5°C. A polyamic acid varnish was obtained by reacting at 10° C. or lower for 3 hours.
上記ワニスをガラス板上にアプリケータを用いて流延し
た後、80℃で30分乾燥した。フィルムをガラス板よ
り剥離した後、150℃で2時間乾燥して軟化点165
℃のポリイミド樹脂からなる接着フィルム(厚さ25μ
m)を得た。The varnish was cast onto a glass plate using an applicator, and then dried at 80°C for 30 minutes. After peeling the film from the glass plate, dry it at 150°C for 2 hours to reach a softening point of 165.
Adhesive film made of polyimide resin (thickness 25μ
m) was obtained.
この接着フィルムを厚さ25μmの片面粗化銅箔と厚さ
50μmのポリイミドフィルムの間に挟み、250℃、
30kgf/J、15分加熱加圧した。J4S−C−6
,481に従って90’銅箔引き剥し強さを測定したと
ころ、室温で2.1kgf/am、150℃で1 、3
kg f / csであった。また、この銅張基板を
塩化メチレン中に浸漬したところ、外観に変化はなかっ
た。This adhesive film was sandwiched between a 25 μm thick single-sided roughened copper foil and a 50 μm thick polyimide film, and heated at 250°C.
It was heated and pressurized at 30 kgf/J for 15 minutes. J4S-C-6
, 481, the 90' copper foil peel strength was measured to be 2.1 kgf/am at room temperature and 1,3 at 150°C.
kg f/cs. Furthermore, when this copper-clad substrate was immersed in methylene chloride, there was no change in appearance.
実施例2
RAM34.4g、RAMBT69.4gを使用する以
外は実施例1と同様にして軟化点150℃のポリイミド
樹脂からなる接着フィルム(厚さ30μm)を得た。Example 2 An adhesive film (thickness: 30 μm) made of a polyimide resin having a softening point of 150° C. was obtained in the same manner as in Example 1, except that 34.4 g of RAM and 69.4 g of RAMBT were used.
この接着フィルムを厚さ35μmの片面粗化銅箔と厚さ
1■のアルミニウム板の間にはさみ。This adhesive film was sandwiched between a 35-μm-thick single-sided roughened copper foil and a 1-inch-thick aluminum plate.
200℃、50kgf/aJ、30分加熱加圧して銅張
基板を得た。この基板の#I箔引き剥し強さは室温で2
、2 kg f / tym、150℃で1 、4
kg f / aaであった。また、この銅張基板を塩
化メチレン中に浸漬したところ、外観に変化はなかった
。A copper-clad substrate was obtained by heating and pressing at 200° C. and 50 kgf/aJ for 30 minutes. The #I foil peel strength of this board is 2 at room temperature.
, 2 kg f/tym, 1,4 at 150 °C
kgf/aa. Furthermore, when this copper-clad substrate was immersed in methylene chloride, there was no change in appearance.
比較例1
メタフェニレンジアミンと2,2−ビス(p −トリメ
リットキシフェニル)プロパンニ無水物を等モル使用し
、実施例上と同様にしてポリイミド樹脂からなる厚さ5
0μmの接着フィルムを作製し、このフィルムを使用し
て実施例2と同様にして250℃、50kgf/cd、
30分加熱加圧して銅張基板を得た。この基板の銅箔引
き剥し強さは室温で1.8kgf/aJであった。また
、この銅張基板を塩化メチレン中に浸漬したところ、接
着剤層が溶解してしまった。Comparative Example 1 Using equimolar moles of metaphenylenediamine and 2,2-bis(p-trimellitoxyphenyl)propanihydride, a 5-thickness polyimide resin was prepared in the same manner as in the example above.
A 0 μm adhesive film was prepared, and this film was used in the same manner as in Example 2 at 250°C, 50 kgf/cd,
A copper-clad substrate was obtained by heating and pressing for 30 minutes. The copper foil peeling strength of this board was 1.8 kgf/aJ at room temperature. Furthermore, when this copper-clad substrate was immersed in methylene chloride, the adhesive layer dissolved.
比較例2
3.3′−ジアミノベンゾフェノンと3,3′4.4′
−ベンゾフェノンテトラカルボン酸二無水物を等モル外
用し、実施例1と同様にしてポリイミド樹脂からなる2
5μmの接着フィルムを作製した。このフィルムを使用
して実施例2と同様にして250℃、30kgf/cd
、30分加熱加圧したところ全く接着しなかった。30
0℃、30kgf/aJ、30分加熱加圧して得られた
銅張基板の銅箔引き剥し強さは室温で0 、2 kg
f / am と非常に低いものであった。Comparative Example 2 3.3'-diaminobenzophenone and 3,3'4.4'
- Apply equimolar amounts of benzophenone tetracarboxylic dianhydride externally, and use the same method as in Example 1 to prepare a polyimide resin 2.
A 5 μm adhesive film was produced. Using this film, the same procedure as in Example 2 was carried out at 250°C and 30 kgf/cd.
When heated and pressurized for 30 minutes, no adhesion occurred. 30
The copper foil peeling strength of the copper-clad board obtained by heating and pressurizing at 0°C and 30 kgf/aJ for 30 minutes is 0.2 kg at room temperature.
The f/am was extremely low.
実施例3
実施例1のポリアミド酸ワニスを厚さ1mmのアルミニ
ウム板に塗布した後、100℃で30分、真空乾燥機中
、150℃で1時間乾燥して厚さ30μmのポリイミド
樹脂からなる接着剤層を形成した。接着剤層の上に厚さ
35μmの片面粗化銅箔を重ねて200℃、50kgf
/aJ、30分加熱加圧して銅張基板を得た。この基板
の銅箔引き剥し強さは室温で2 、0 )cg f /
am、150℃で1.2kg f / aiであった
。また、この銅張基板を塩化メチレン中に浸漬したとこ
ろ、外観に変化はなかった。Example 3 The polyamic acid varnish of Example 1 was applied to an aluminum plate with a thickness of 1 mm, and then dried at 100°C for 30 minutes and in a vacuum dryer at 150°C for 1 hour to form an adhesive made of polyimide resin with a thickness of 30 μm. A coating layer was formed. Layer a single-sided roughened copper foil with a thickness of 35 μm on the adhesive layer and heat at 200°C and 50 kgf.
/aJ, was heated and pressed for 30 minutes to obtain a copper-clad substrate. The copper foil peeling strength of this board is 2.0) cg f /
am, 1.2 kg f/ai at 150°C. Furthermore, when this copper-clad substrate was immersed in methylene chloride, there was no change in appearance.
実施例4
RAM34.2g、BAMBT69.4gを使用する以
外は実施例1と同様にしてポリアミド酸ワニスを得た。Example 4 A polyamic acid varnish was obtained in the same manner as in Example 1 except that 34.2 g of RAM and 69.4 g of BAMBT were used.
このワニスを厚さ35μmの片面粗化鋼箔の粗化面側に
塗布した後、80℃30分、150℃で2時間乾燥して
厚さ25μmのポリイミド樹脂からなる接着剤層を形成
した。この接着剤層amと厚さ25μmのポリイミドフ
ィルムを重ねた後。This varnish was applied to the roughened side of a single-sided roughened steel foil having a thickness of 35 μm, and then dried at 80° C. for 30 minutes and at 150° C. for 2 hours to form an adhesive layer made of polyimide resin with a thickness of 25 μm. After this adhesive layer am and a polyimide film with a thickness of 25 μm were laminated.
230℃、30kgf/国、1時間、加熱加圧して銅張
基板を得た。この基板の銅箔引き剥し強さは室温で2
、3 kg f / am、150℃で1 、4 kg
f / Calであり、塩化メチレン中に浸漬しても
外観に変化はなかった。A copper-clad substrate was obtained by heating and pressing at 230° C. and 30 kgf/country for 1 hour. The copper foil peel strength of this board is 2 at room temperature.
, 3 kg f/am, 1,4 kg at 150 °C
f/Cal, and there was no change in appearance even when immersed in methylene chloride.
なお、実施例1及び実施例2で得られた接着フィルム(
ポリイミド樹脂)の一部を採取し、次の物性等を測定し
た。Note that the adhesive films obtained in Example 1 and Example 2 (
A portion of the polyimide resin) was sampled and the following physical properties were measured.
実施例1で得られた樹脂:
(1)熱分解温度 431℃
(2)IRスペクトル(KBr法)における主な吸収
1785am−” (イミド基)
1730C11−1(エステル基)
2970.2880cm−” (メチル基)実施例2で
得られた樹脂:
(1)熱分解温度 418℃
(2)IRスペクトル(KBr法)における主な吸収
179’Oex−” (イミド基)
1730aa−” (xステル基)
2980.2880値−1(メチル基)以上より、実施
例1で得られた樹脂は、一般式CI)においてRが式(
a)で表わされるものである繰り返し単位を有するポリ
イミド樹脂であり、実施例2で得られた樹脂は、一般式
(I)においてRが式(b)で表わされるものである繰
り返し単位を有するポリイミド樹脂であった。Resin obtained in Example 1: (1) Thermal decomposition temperature 431°C (2) Main absorption in IR spectrum (KBr method) 1785 am-” (imide group) 1730C11-1 (ester group) 2970.2880 cm-” ( Methyl group) Resin obtained in Example 2: (1) Thermal decomposition temperature 418°C (2) Main absorption in IR spectrum (KBr method) 179'Oex-'' (imide group) 1730aa-'' (x stell group) 2980.2880 value -1 (methyl group) From the above, the resin obtained in Example 1 has the general formula CI) in which R is the formula (
The resin obtained in Example 2 is a polyimide resin having a repeating unit represented by formula (a), and the resin obtained in Example 2 is a polyimide resin having a repeating unit in which R is represented by formula (b) in general formula (I). It was resin.
Claims (2)
樹脂を含む絶縁層を積層してなる配線板用基板。1. Metal foil and general formula (I) ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (However, in the formula, R is formula (a) ▲There are mathematical formulas, chemical formulas, tables, etc.▼ Or formula (b) ▲Mathematical formula, A wiring board substrate made by laminating insulating layers containing polyimide resin having a repeating unit represented by the chemical formula, table, etc.
層及び支持体を順次積層してなる請求項1記載の配線板
用基板。2. 2. The wiring board substrate according to claim 1, which is formed by sequentially laminating a metal foil, an insulating layer containing the polyimide resin according to claim 1, and a support.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19713189A JP2712597B2 (en) | 1989-07-28 | 1989-07-28 | Wiring board substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19713189A JP2712597B2 (en) | 1989-07-28 | 1989-07-28 | Wiring board substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0360182A true JPH0360182A (en) | 1991-03-15 |
| JP2712597B2 JP2712597B2 (en) | 1998-02-16 |
Family
ID=16369267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19713189A Expired - Lifetime JP2712597B2 (en) | 1989-07-28 | 1989-07-28 | Wiring board substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2712597B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001034678A1 (en) * | 1999-11-10 | 2001-05-17 | Kaneka Corporation | Soluble polyimide and composition comprising the same, bonding sheet, adhesive laminated film for covering accelerator beam tube, and adhesive laminated film for covering conductor wire for accelerator quench heater |
| JP2023002497A (en) * | 2021-06-22 | 2023-01-10 | ウィンゴーテクノロジー株式会社 | Polyimide |
-
1989
- 1989-07-28 JP JP19713189A patent/JP2712597B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001034678A1 (en) * | 1999-11-10 | 2001-05-17 | Kaneka Corporation | Soluble polyimide and composition comprising the same, bonding sheet, adhesive laminated film for covering accelerator beam tube, and adhesive laminated film for covering conductor wire for accelerator quench heater |
| JP2023002497A (en) * | 2021-06-22 | 2023-01-10 | ウィンゴーテクノロジー株式会社 | Polyimide |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2712597B2 (en) | 1998-02-16 |
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