JPH036363A - Formation of polyimide resin coating film - Google Patents
Formation of polyimide resin coating filmInfo
- Publication number
- JPH036363A JPH036363A JP13813089A JP13813089A JPH036363A JP H036363 A JPH036363 A JP H036363A JP 13813089 A JP13813089 A JP 13813089A JP 13813089 A JP13813089 A JP 13813089A JP H036363 A JPH036363 A JP H036363A
- Authority
- JP
- Japan
- Prior art keywords
- polyimide resin
- substrate
- arom
- coating film
- resin coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 31
- 239000009719 polyimide resin Substances 0.000 title claims abstract description 27
- 239000011248 coating agent Substances 0.000 title abstract description 12
- 238000000576 coating method Methods 0.000 title abstract description 12
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000178 monomer Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 11
- 239000011737 fluorine Substances 0.000 claims abstract description 11
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims abstract description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 5
- 239000002994 raw material Substances 0.000 claims description 23
- 238000001704 evaporation Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 150000004984 aromatic diamines Chemical class 0.000 claims description 7
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 5
- 230000000379 polymerizing effect Effects 0.000 claims description 4
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 abstract description 3
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract 3
- 150000004985 diamines Chemical class 0.000 abstract 3
- 239000007858 starting material Substances 0.000 abstract 3
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 230000008020 evaporation Effects 0.000 description 11
- 238000002834 transmittance Methods 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- -1 4-aminophenoxy Chemical group 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Physical Vapour Deposition (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は例えば半導体素子の層間絶縁膜、パッシベーシ
ョン膜、ソフトエラー防止膜、プラスチックコンデンサ
の誘電体膜、液晶の配向膜、光学薄膜等に用いるポリイ
ミド樹脂被膜の形成方法に関する。Detailed Description of the Invention (Industrial Field of Application) The present invention is applicable to, for example, interlayer insulation films of semiconductor devices, passivation films, soft error prevention films, dielectric films of plastic capacitors, alignment films of liquid crystals, optical thin films, etc. The present invention relates to a method for forming a polyimide resin film.
（従来の技術）
本出願人は先に、この種のポリイミド樹脂被膜の形成方
法として特開昭６１−７８４６３号公報に見られるよう
に、例えばピロメリト酸二無水物のような芳香族酸二無
水物と、例えば４．４゛−ジアミノジフェニルエーテル
のような芳香族ジアミンとを用いて真空中で両モノマー
を蒸発させて、これを基体上で重合させてポリイミド樹
脂被膜を形成させる方法を提案した。(Prior Art) The present applicant has previously proposed a method for forming this type of polyimide resin coating, for example, aromatic acid dianhydride such as pyromellitic dianhydride, as seen in JP-A-61-78463. A method has been proposed in which a polyimide resin film is formed by evaporating both monomers in a vacuum using a monomer and an aromatic diamine such as 4.4'-diaminodiphenyl ether, and polymerizing the monomers on a substrate.
（発明か解決しようとする課題）
しかし上記両原料モノマーを真空中で蒸発させる方法で
は比較的誘導率の大きなポリイミド樹脂被膜しか得られ
ず、チャージアップを少なくするため比誘電率の小さい
材料か望まれる半導体の絶縁膜用としてはあまり適した
方法ではなかった。また、この方法で得られるポリイミ
ド樹脂被膜は黄色に着色しているため、無色透明な膜が
求められる液晶の配向膜や光学薄膜としても十分なもの
が得られなかった。(Problem to be solved by the invention) However, the method of evaporating both of the above raw material monomers in vacuum only yields a polyimide resin coating with a relatively high dielectric constant, and in order to reduce charge-up, it is desirable to use a material with a low dielectric constant. This method was not very suitable for insulating films of semiconductors. In addition, since the polyimide resin coating obtained by this method is colored yellow, it could not be used as a liquid crystal alignment film or an optical thin film, which requires a colorless and transparent film.
本発明は、上記問題点を解消し、基体上に比誘電率が小
さく、無色透明なポリイミド樹脂被膜を形成する方法を
提供することを特徴とする特許
（課題を解決するための手段）
本発明は、真空中で原料モノマーとして芳香族酸二無水
物と芳香族ジアミンとを蒸発させて、これを基体上で重
合させてポリイミド樹脂被膜を形成させる方法において
、前記ポリイミド樹脂の原料モノマーのうち少なくとも
一方がフッ素を含有したモノマーであることを特徴とす
る。The present invention solves the above problems and provides a method for forming a colorless and transparent polyimide resin film with a low dielectric constant on a substrate (Means for Solving the Problems) The present invention is a method of forming a polyimide resin film by evaporating aromatic acid dianhydride and aromatic diamine as raw material monomers in vacuum and polymerizing them on a substrate, in which at least one of the raw material monomers of the polyimide resin is formed. One of the monomers is a fluorine-containing monomer.
ここでポリイミド樹脂の一方の原料モノマに用いる芳香
族酸二無水物のうちフッ素を含有するモノマーとしては
２．２−ビス（３，４無水ジカルボン酸）へキサフロロ
プロパンか好適であり、また他方の原料モノマーに用い
る芳香族ジアミンのうちフッ素を含有するモノマーとし
ては２．２−ビス（４−アミノフェニル）へキサフロロ
プロパン、２．２−ビス［４（４−アミノフェノキシ）
フェニル］ヘキサフロロプロパンが好適である。また前
記両原料モノマーを蒸発させて基体上で重合させる際の
真空度としてはＩ Ｘ １０’ 〜Ｉ Ｘ １Ｏ−６Ｔ
ｏｒｒ程度に設定する。Among the aromatic acid dianhydrides used as one raw material monomer of the polyimide resin, 2,2-bis(3,4 dicarboxylic anhydride) hexafluoropropane is suitable as the fluorine-containing monomer, and the other Among aromatic diamines used as raw material monomers, fluorine-containing monomers include 2.2-bis(4-aminophenyl)hexafluoropropane and 2.2-bis[4(4-aminophenoxy)].
Phenyl]hexafluoropropane is preferred. In addition, the degree of vacuum when evaporating both of the raw material monomers and polymerizing them on the substrate is I X 10' to I X 1O-6T.
Set it to about orr.
（実施例） 以下添附図面に従って本発明の実施例につき説明する。(Example) Embodiments of the present invention will be described below with reference to the accompanying drawings.
第１図は本発明方法を実施する装置の一例を示すもので
、（１）は処理室を示し、該処理室（１）内を外部の真
空ポンプその他の真空排気系（２）に接続すると共に、
該処理室（１）内に合成樹脂の蒸着被膜を形成せしめる
べき基体（３）を２本のレールから成るホルダ（４）上
に保持し、該基体（３）を該ホルダ（４）の背面に設け
られたヒータ（５）によって所望温度に加熱できるよう
にし、かつ基体（３）の近傍に設けられた膜厚モニター
（６）によって基体（３）上に形成される被膜厚を測定
するようにした。FIG. 1 shows an example of an apparatus for carrying out the method of the present invention, in which (1) shows a processing chamber, and the inside of the processing chamber (1) is connected to an external vacuum pump or other evacuation system (2). With,
A substrate (3) on which a synthetic resin vapor-deposited film is to be formed in the processing chamber (1) is held on a holder (4) consisting of two rails, and the substrate (3) is placed on the back side of the holder (4). A heater (5) provided on the substrate (3) is used to heat the substrate to a desired temperature, and a film thickness monitor (6) provided near the substrate (3) measures the thickness of the coating formed on the substrate (3). I made it.
また該処理室（１）内下位に該基体（３）に対向させて
ポリイミド樹脂の原料モノマーａ及びモノマｂを蒸発さ
せるためのガラス製の蒸発用容器（７）（７）を設け、
該各蒸発用容器（７）をその近傍に設けられた水晶振動
のレートモニター（８）と、ヒータ（９）とによって前
記原料モノマーａ及びｂの蒸発レートを常に一定化させ
る所定温度にコント口ル出来るようにした。Furthermore, a glass evaporation container (7) (7) for evaporating the raw material monomer a and monomer b of the polyimide resin is provided in the lower part of the processing chamber (1), facing the substrate (3).
Each evaporation container (7) is controlled to a predetermined temperature to keep the evaporation rate of the raw material monomers a and b constant at all times using a crystal vibration rate monitor (8) and a heater (9) provided near the evaporation container (7). I made it possible to do it.
図面中、（１０は基体（３）と両蒸発用容器（７）との
間に介在されるシャッタ、（１１）は両蒸発用容器（７
）間に設けた仕切板を示す。In the drawing, (10) is a shutter interposed between the base (3) and both evaporation containers (7), and (11) is both evaporation containers (7).
) shows the partition plate installed between.
次に前記装置を用いた縮合重合によるポリイミド樹脂被
膜の形成の例を示す。Next, an example of forming a polyimide resin film by condensation polymerization using the above-mentioned apparatus will be shown.
実施例１
まず、蒸発用容器（７） （７）の一方に原料モノマａ
としてピロメリト酸二無水物と、他方に原料モノマーｂ
即ち芳香族ジアミンとして２．２ビス（４−アミノフェ
ニル）へキサフロロプロパンとを充填し、シャッタｑＯ
を閉じた状態で処理室（１）内界囲気ガスの全圧を真空
排気系（２）を介してＩ Ｘ １０’ Ｔｏｒｒに設定
する。Example 1 First, raw material monomer a was placed in one side of the evaporation container (7) (7).
as pyromellitic dianhydride and as the raw material monomer b on the other hand.
That is, the aromatic diamine is filled with 2.2bis(4-aminophenyl)hexafluoropropane, and the shutter qO
With the chamber (1) closed, the total pressure of the ambient gas inside the processing chamber (1) is set to I x 10' Torr via the evacuation system (2).
次いで、レートモニター（８） （８）で蒸発用容器（
７）（７）からの各原料モノマーａ、ｂの蒸発レートを
測定しなからヒータ（９） （９）によってピロメリト
酸二無水物を１６０°Ｃ±２℃に、また２、２−ビス（
４−アミノフェニル）へキサフロロプロパンを２００°
Ｃ±２°Ｃに加熱する。Next, the evaporation container (
7) After measuring the evaporation rate of each raw material monomer a and b from (7), the pyromellitic dianhydride was heated to 160°C ± 2°C using a heater (9) and 2,2-bis(
4-aminophenyl)hexafluoropropane at 200°
Heat to ±2°C.
次いで、原料モノマーａ、ｂが所要温度に達して所要の
蒸発レートが得られた後にシャッタ（ｌ■を開け、基体
（３）上に該原料モノマーａＳｂを６０人／分の析出速
度で厚さ ０．２１Ｌｍに堆積させ、その後シャッタ、
（１０を閉じて該基体（３）をヒータ（５）で温度３０
０℃に加熱しながら所定時間保持して該基体（３）上で
ポリイミドの重合反応を起こさせて該基体（３）上にフ
ッ素を含有したポリイミド樹脂被膜を形成させ、比誘電
率と各波長の光に対する透過率を調べた。その結果、比
誘電率は３．３〜３．５（１０Ｋｌｌｚ）であり、透過
率は第２図の曲線Ａの通りである。Next, after the raw material monomers a and b reached the required temperature and the required evaporation rate was obtained, the shutter (1) was opened and the raw material monomer aSb was deposited on the substrate (3) at a deposition rate of 60 people/min to a thickness of Deposit to 0.21Lm, then shutter,
(Close 10 and heat the base (3) to 30°C with heater (5).
The polymerization reaction of polyimide is caused on the substrate (3) by heating it to 0°C and holding it for a predetermined time to form a fluorine-containing polyimide resin coating on the substrate (3). The transmittance of light was investigated. As a result, the dielectric constant was 3.3 to 3.5 (10 Kllz), and the transmittance was as shown by curve A in FIG.
尚、原料モノマーａ、ｂは化学量論的に被膜が形成され
るように蒸発レートの調整によって１：１のモル比で蒸
発するようにした。The raw material monomers a and b were evaporated at a molar ratio of 1:1 by adjusting the evaporation rate so that a film was formed stoichiometrically.
得られたポリイミド樹脂被膜は無色透明、緻密且つ高純
度で基体に対する密着性も良好であり、また、電気絶縁
性、耐薬品性、耐熱性等の諸物性も従来の湿式法による
ものに比べて何ら遜色は無かった。The obtained polyimide resin coating is colorless and transparent, dense, and highly pure, and has good adhesion to the substrate, and also has better physical properties such as electrical insulation, chemical resistance, and heat resistance than those made by conventional wet methods. There was no difference.
実施例２
つぎに、前記実施例１と同様な方法で原料モノマーａと
して２．２−ビス（３，４−無水ジカルボン酸）へキサ
フロロプロパンを１７０°Ｃ±２℃で加熱蒸発させ、原
料モノマーｂとして２．２−ビス［４−（４−アミノフ
ェノキシ）フェニル］ヘキサフロロプロパンを１８０
’Ｃ±２℃で加熱蒸発させて基体（３）上に６０人／分
の析出速度で厚さ０．２ｇｍに堆積さぜた。その後接基
体（３）をヒータ（５）で温度３００℃に加熱しながら
所定時間保持してポリイミドの重合反応を起こさせて基
体（３）上にフッ素を含有したポリイミド樹脂被膜を形
成させ、比誘電率と光の透過率を調べた。Example 2 Next, in the same manner as in Example 1, 2,2-bis(3,4-dicarboxylic anhydride) hexafluoropropane was heated and evaporated at 170°C ± 2°C as the raw material monomer a, and the raw material 2.2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane as monomer b at 180%
It was deposited on the substrate (3) to a thickness of 0.2 gm at a deposition rate of 60 people/min by heating and evaporating at 2°C ±2°C. Thereafter, the adjoining substrate (3) is heated to a temperature of 300°C with a heater (5) and held for a predetermined time to cause a polymerization reaction of polyimide to form a fluorine-containing polyimide resin coating on the substrate (3). The dielectric constant and light transmittance were investigated.
その結果、比率誘電率は２．９〜３．１．（ｌＯＫＨｚ
）であり、透過率は第２図の曲線Ｂの通りである。As a result, the relative dielectric constant was 2.9 to 3.1. (lOKHz
), and the transmittance is as shown by curve B in FIG.
また、得られたポリイミド膜は無色透明であった。Moreover, the obtained polyimide film was colorless and transparent.
比較例
前記実施例と比較するために、従来法と同様の原料モノ
マーａに芳香族酸二無水物としてピロメリット酸二無水
物と、原料モノマーｂに芳香族ジアミンとして４．４゛
−ジアミノジフェニルエーテルとを用いて前記実施例と
同一装置および同一方法により基体（３）上に両モノマ
ーを厚さ ０．２Ａ ｍに堆積させ、基体（３）をヒー
タ（５）で温度２００℃に加熱しながら所定時間保持し
て基体（３）上でポリイミドの重合反応を起こさせて基
体（３）上にポリイミド樹脂被膜を形成させ、比誘電率
と光の透過率を調べた。その結果、比誘電率は３．５−
３．８（ｌＯＫＨｚ）であり、透過率は第２図の曲線Ｃ
の通り波長３８０〜６００ｎｍに光の吸収がみられ、膜
の色も黄色に着色していた。Comparative Example In order to compare with the above example, pyromellitic dianhydride was used as the aromatic acid dianhydride in the raw material monomer a, and 4.4'-diaminodiphenyl ether was used as the aromatic diamine in the raw material monomer b, as in the conventional method. Both monomers were deposited on the substrate (3) to a thickness of 0.2 A m using the same equipment and the same method as in the previous example, and the substrate (3) was heated to a temperature of 200° C. with the heater (5). This was maintained for a predetermined time to cause a polymerization reaction of polyimide on the substrate (3) to form a polyimide resin film on the substrate (3), and the dielectric constant and light transmittance were examined. As a result, the dielectric constant is 3.5-
3.8 (lOKHz), and the transmittance is as shown in curve C in Figure 2.
As can be seen, light absorption was observed in the wavelength range of 380 to 600 nm, and the film was also colored yellow.
（発明の効果）
このように本発明によるときは、真空中で原料モノマー
として芳香族酸二無水物と芳香族ジアミンとを蒸発させ
て、これを基体上で重合させてポリイミド樹脂被膜を形
成させる方法において、前記ポリイミド樹脂の原料モノ
マーのうち少なくとも一方を、フッ素を含有した七ツマ
−とするようにしたので、基体上に比誘電率が小さく無
色透明なポリイミド樹脂被膜を蒸着重合法により形成で
きる効果を有する。(Effect of the invention) According to the present invention, aromatic acid dianhydride and aromatic diamine are evaporated as raw material monomers in vacuum, and then polymerized on a substrate to form a polyimide resin film. In the method, since at least one of the raw material monomers of the polyimide resin is a fluorine-containing hexamer, a colorless and transparent polyimide resin film with a small dielectric constant can be formed on the substrate by vapor deposition polymerization. have an effect.
第１図は本発明ポリイミド樹脂被膜の形成方法を実施す
るための装置の一例の載断面図、第２図は本発明実施例
並びに従来例におけるポリイミド樹脂被膜の光の透過率
を示す特性線図である。
（１）・・・処 理 室 （２）・・・真空排気
系（３）・・・基 体 ａ、ｂ・・原料モノマ特
許 出 願 人 日本真空技術株式会社代
理 人 北 村 欣外３名Fig. 1 is a cross-sectional view of an example of an apparatus for carrying out the method for forming a polyimide resin film of the present invention, and Fig. 2 is a characteristic line diagram showing the light transmittance of the polyimide resin film in the embodiment of the present invention and the conventional example. It is. (1)...Processing chamber (2)...Evacuation system (3)...Substrate a, b...Raw material monomer patent applicant: Japan Vacuum Technology Co., Ltd.
Rihito Kitamura Kingai 3 people
Claims (1)
族ジアミンとを蒸発させて、これを基体上で重合させて
ポリイミド樹脂被膜を形成させる方法において、前記ポ
リイミド樹脂の原料モノマーの少なくとも一方がフッ素
を含有したモノマーであることを特徴とするポリイミド
樹脂被膜の形成方法。In a method of forming a polyimide resin film by evaporating aromatic acid dianhydride and aromatic diamine as raw material monomers in vacuum and polymerizing them on a substrate, at least one of the raw material monomers of the polyimide resin is fluorine. A method for forming a polyimide resin film, characterized by using a monomer containing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1138130A JP2821902B2 (en) | 1989-05-31 | 1989-05-31 | Method of forming low dielectric constant polyimide coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1138130A JP2821902B2 (en) | 1989-05-31 | 1989-05-31 | Method of forming low dielectric constant polyimide coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH036363A true JPH036363A (en) | 1991-01-11 |
| JP2821902B2 JP2821902B2 (en) | 1998-11-05 |
Family
ID=15214686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1138130A Expired - Lifetime JP2821902B2 (en) | 1989-05-31 | 1989-05-31 | Method of forming low dielectric constant polyimide coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2821902B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012204518A (en) * | 2011-03-24 | 2012-10-22 | Tokyo Electron Ltd | Deposition apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4111906A (en) * | 1976-07-19 | 1978-09-05 | Trw Inc. | Polyimides prepared from perfluoroisopropylidene diamine |
| JPS6178463A (en) * | 1984-09-25 | 1986-04-22 | Ulvac Corp | Formation of synthetic resin film |
-
1989
- 1989-05-31 JP JP1138130A patent/JP2821902B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4111906A (en) * | 1976-07-19 | 1978-09-05 | Trw Inc. | Polyimides prepared from perfluoroisopropylidene diamine |
| JPS6178463A (en) * | 1984-09-25 | 1986-04-22 | Ulvac Corp | Formation of synthetic resin film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012204518A (en) * | 2011-03-24 | 2012-10-22 | Tokyo Electron Ltd | Deposition apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2821902B2 (en) | 1998-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4624867A (en) | Process for forming a synthetic resin film on a substrate and apparatus therefor | |
| Takahashi et al. | Synthesis of aromatic polyimide film by vacuum deposition polymerization | |
| US6358863B1 (en) | Oxide/organic polymer multilayer thin films deposited by chemical vapor deposition | |
| JPH0260934A (en) | Polyimide and copolyimide which have low dielectric constant and low moisture absorptivity and are used for both interlayer insulator and base plate coating film | |
| US5310863A (en) | Polyimide materials with improved physico-chemical properties | |
| US4759958A (en) | Method for forming polyimide film by chemical vapor deposition | |
| JPS6178463A (en) | Formation of synthetic resin film | |
| JPH1129645A (en) | Aromatic polyimide film, laminate and solar cell | |
| JP3231373B2 (en) | Apparatus and method for forming synthetic resin film | |
| JP2821902B2 (en) | Method of forming low dielectric constant polyimide coating | |
| JP2821907B2 (en) | Method of forming polyimide resin coating | |
| Malba et al. | Vapor deposition polymerization of polyimide for microelectronic applications | |
| JPS61261322A (en) | Formation of synthetic resin film | |
| JPH03200218A (en) | Function member having intra-surface oriented and polymerized thin film and its production | |
| Yanagishita et al. | Preparation of polyimide composite membrane by chemical vapor deposition and polymerization technique (CVDP) | |
| JPH01190729A (en) | Formation of polyimide resin film | |
| JPH0445259A (en) | Film forming device | |
| JPH0250984B2 (en) | ||
| JPH07102087A (en) | Highly birefringent polyimide film manufacturing method | |
| JP3080183B2 (en) | Polyimide resin thin film | |
| JPH04180552A (en) | Formation of high-molecular film and device for forming this film | |
| JP2000003910A (en) | Method of forming low relative dielectric insulating film and interlayer insulating film | |
| Liberman et al. | Vapor deposition of polyimide: segregation of partially reacted species at the polyimide/Si (100) interface | |
| JPH09326388A (en) | Low relative dielectric constant polymer film forming method, interlayer insulating film forming method, and low relative dielectric constant polymer film forming apparatus | |
| JPS63166961A (en) | Formation of polyimide resin coated film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090904 Year of fee payment: 11 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090904 Year of fee payment: 11 |