JPH0363930U - - Google Patents
Info
- Publication number
- JPH0363930U JPH0363930U JP12499889U JP12499889U JPH0363930U JP H0363930 U JPH0363930 U JP H0363930U JP 12499889 U JP12499889 U JP 12499889U JP 12499889 U JP12499889 U JP 12499889U JP H0363930 U JPH0363930 U JP H0363930U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- semiconductor layer
- utility
- scope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Description
第１図は本考案の薄膜トランジスタの一実施例
の断面図、第２図はプラズマＣＶＤ法によりａ−
Ｓｉ：Ｈ：Ｃ膜を成膜する時の流量比（ＣＨ４／
ＳｉＨ４）と、ａ−Ｓｉ：Ｈ：Ｃ膜の暗導電率（
σｄ）、光導電率（σＰｈ）及びこれらの比（σ
Ｐｈ／σｄ）との関係を示す図、第３図は上記の
流量比（ＣＨ４／ＳｉＨ４）とトランジスタのオ
ン電流ＩＯＮとの関係を示す図、第４図は従来の
薄膜トランジスタの断面図である。
１１……基板、１２……ゲート電極、１３……
ゲート絶縁膜、１４……半導体層、１５……コン
タクト層、１６……ソース・ドレイン電極、１７
……保護絶縁膜、１８……遮光膜。
FIG. 1 is a cross-sectional view of one embodiment of the thin film transistor of the present invention, and FIG. 2 is an a-
Flow rate ratio (CH 4 /
SiH 4 ) and the dark conductivity of the a-Si:H:C film (
σ d ), photoconductivity (σP h ) and their ratio (σ
P h /σ d ), FIG. 3 is a diagram showing the relationship between the above flow rate ratio (CH 4 /SiH 4 ) and transistor on-current ION, and FIG. 4 is a cross section of a conventional thin film transistor. It is a diagram. 11...Substrate, 12...Gate electrode, 13...
Gate insulating film, 14... Semiconductor layer, 15... Contact layer, 16... Source/drain electrode, 17
...protective insulating film, 18...light shielding film.
Claims (1)
する薄膜トランジスタ。 A thin film transistor characterized by a trace amount of carbon mixed into the semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12499889U JPH0363930U (en) | 1989-10-25 | 1989-10-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12499889U JPH0363930U (en) | 1989-10-25 | 1989-10-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0363930U true JPH0363930U (en) | 1991-06-21 |
Family
ID=31672887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12499889U Pending JPH0363930U (en) | 1989-10-25 | 1989-10-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0363930U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60111472A (en) * | 1983-11-22 | 1985-06-17 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JPS63219171A (en) * | 1987-03-06 | 1988-09-12 | Hosiden Electronics Co Ltd | Thin-film transistor |
-
1989
- 1989-10-25 JP JP12499889U patent/JPH0363930U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60111472A (en) * | 1983-11-22 | 1985-06-17 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JPS63219171A (en) * | 1987-03-06 | 1988-09-12 | Hosiden Electronics Co Ltd | Thin-film transistor |
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