JPH0363930U - - Google Patents

Info

Publication number
JPH0363930U
JPH0363930U JP12499889U JP12499889U JPH0363930U JP H0363930 U JPH0363930 U JP H0363930U JP 12499889 U JP12499889 U JP 12499889U JP 12499889 U JP12499889 U JP 12499889U JP H0363930 U JPH0363930 U JP H0363930U
Authority
JP
Japan
Prior art keywords
thin film
film transistor
semiconductor layer
utility
scope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12499889U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12499889U priority Critical patent/JPH0363930U/ja
Publication of JPH0363930U publication Critical patent/JPH0363930U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)

Description

【図面の簡単な説明】
第１図は本考案の薄膜トランジスタの一実施例
の断面図、第２図はプラズマＣＶＤ法によりａ−
Ｓｉ：Ｈ：Ｃ膜を成膜する時の流量比（ＣＨ４／
ＳｉＨ４）と、ａ−Ｓｉ：Ｈ：Ｃ膜の暗導電率（
σｄ）、光導電率（σＰｈ）及びこれらの比（σ
Ｐｈ／σｄ）との関係を示す図、第３図は上記の
流量比（ＣＨ４／ＳｉＨ４）とトランジスタのオ
ン電流ＩＯＮとの関係を示す図、第４図は従来の
薄膜トランジスタの断面図である。 １１……基板、１２……ゲート電極、１３……
ゲート絶縁膜、１４……半導体層、１５……コン
タクト層、１６……ソース・ドレイン電極、１７
……保護絶縁膜、１８……遮光膜。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体層に微量の炭素を混入したことを特徴と
    する薄膜トランジスタ。
JP12499889U 1989-10-25 1989-10-25 Pending JPH0363930U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12499889U JPH0363930U (ja) 1989-10-25 1989-10-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12499889U JPH0363930U (ja) 1989-10-25 1989-10-25

Publications (1)

Publication Number Publication Date
JPH0363930U true JPH0363930U (ja) 1991-06-21

Family

ID=31672887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12499889U Pending JPH0363930U (ja) 1989-10-25 1989-10-25

Country Status (1)

Country Link
JP (1) JPH0363930U (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60111472A (ja) * 1983-11-22 1985-06-17 Matsushita Electric Ind Co Ltd 半導体装置
JPS63219171A (ja) * 1987-03-06 1988-09-12 Hosiden Electronics Co Ltd 薄膜トランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60111472A (ja) * 1983-11-22 1985-06-17 Matsushita Electric Ind Co Ltd 半導体装置
JPS63219171A (ja) * 1987-03-06 1988-09-12 Hosiden Electronics Co Ltd 薄膜トランジスタ

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