JPH036655B2 - - Google Patents

Info

Publication number
JPH036655B2
JPH036655B2 JP31557586A JP31557586A JPH036655B2 JP H036655 B2 JPH036655 B2 JP H036655B2 JP 31557586 A JP31557586 A JP 31557586A JP 31557586 A JP31557586 A JP 31557586A JP H036655 B2 JPH036655 B2 JP H036655B2
Authority
JP
Japan
Prior art keywords
film
silicon film
polycrystalline silicon
manufacturing
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP31557586A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63166247A (ja
Inventor
Juichi Mikata
Katsunori Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP31557586A priority Critical patent/JPS63166247A/ja
Publication of JPS63166247A publication Critical patent/JPS63166247A/ja
Publication of JPH036655B2 publication Critical patent/JPH036655B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP31557586A 1986-12-26 1986-12-26 半導体装置の製造方法 Granted JPS63166247A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31557586A JPS63166247A (ja) 1986-12-26 1986-12-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31557586A JPS63166247A (ja) 1986-12-26 1986-12-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS63166247A JPS63166247A (ja) 1988-07-09
JPH036655B2 true JPH036655B2 (fr) 1991-01-30

Family

ID=18066994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31557586A Granted JPS63166247A (ja) 1986-12-26 1986-12-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS63166247A (fr)

Also Published As

Publication number Publication date
JPS63166247A (ja) 1988-07-09

Similar Documents

Publication Publication Date Title
US5920453A (en) Completely encapsulated top electrode of a ferroelectric capacitor
JP2723396B2 (ja) 不揮発性メモリ装置の製造方法
JPH0376032B2 (fr)
US5237196A (en) Semiconductor device and method for manufacturing the same
JPH04326766A (ja) 半導体装置及びその製造方法
JPH06151751A (ja) 半導体集積回路装置及びその製造方法
EP0287031B1 (fr) Couche isolante à haute tension de claquage disposée entre des couches de polysilicium
KR0120547B1 (ko) 캐패시터 제조방법
US5031010A (en) Semiconductor memory device and method of manufacturing the same
JPH036655B2 (fr)
JPS6228591B2 (fr)
JPH10340994A (ja) 半導体装置の製造方法
JP3140023B2 (ja) 半導体装置及びその製造方法
JPS62200755A (ja) 半導体装置の製造方法
JPH039572A (ja) 半導体装置の製造方法
JPH0227773A (ja) 不揮発性半導体記憶装置の製造方法
JPH06177396A (ja) 不揮発性半導体記憶装置の製造方法
JPH0142147B2 (fr)
JPS605074B2 (ja) 半導体装置の製造方法
JP3605994B2 (ja) ２層ゲート型半導体記憶装置の製造方法
KR970000975B1 (ko) 캐패시터의 저장전극 제조방법
JPH05114712A (ja) ストレージ電極の形成方法
KR970011670B1 (ko) 디램셀의 저장전극 형성방법
JPH04106982A (ja) 半導体装置の製造方法
JPH08181288A (ja) 強誘電体記憶装置およびその製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term