JPH0368543B2 - - Google Patents
Info
- Publication number
- JPH0368543B2 JPH0368543B2 JP63121705A JP12170588A JPH0368543B2 JP H0368543 B2 JPH0368543 B2 JP H0368543B2 JP 63121705 A JP63121705 A JP 63121705A JP 12170588 A JP12170588 A JP 12170588A JP H0368543 B2 JPH0368543 B2 JP H0368543B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- gate
- film
- voltage
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63121705A JPH02371A (ja) | 1988-05-20 | 1988-05-20 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63121705A JPH02371A (ja) | 1988-05-20 | 1988-05-20 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6394179A Division JPS55156370A (en) | 1979-05-25 | 1979-05-25 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02371A JPH02371A (ja) | 1990-01-05 |
| JPH0368543B2 true JPH0368543B2 (2) | 1991-10-28 |
Family
ID=14817842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63121705A Granted JPH02371A (ja) | 1988-05-20 | 1988-05-20 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02371A (2) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4506930B2 (ja) * | 2003-05-14 | 2010-07-21 | セイコーエプソン株式会社 | 不揮発性記憶装置を含む半導体装置 |
| JP5025703B2 (ja) * | 2009-09-25 | 2012-09-12 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP4507023B2 (ja) * | 2009-12-07 | 2010-07-21 | セイコーエプソン株式会社 | 不揮発性記憶装置を含む半導体装置 |
-
1988
- 1988-05-20 JP JP63121705A patent/JPH02371A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02371A (ja) | 1990-01-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0219980B2 (2) | ||
| US5079603A (en) | Semiconductor memory device | |
| US5504706A (en) | Low voltage Fowler-Nordheim flash EEPROM memory array utilizing single level poly cells | |
| US5557569A (en) | Low voltage flash EEPROM C-cell using fowler-nordheim tunneling | |
| US6608346B2 (en) | Method and structure for an improved floating gate memory cell | |
| US5493138A (en) | Single transistor non-volatile electrically alterable semiconductor memory device | |
| KR20060012665A (ko) | 플래쉬 메모리 어레이 | |
| KR940704063A (ko) | 이이피롬(eeprom) 셀, 집적회로 이이피롬(eeprom)이중 게이트 전계효과 트랜지스터 형성방법 및 이이피롬(eeprom) 메모리 어레이 형성방법(flash eeprom) | |
| JPS6046554B2 (ja) | 半導体記憶素子及び記憶回路 | |
| JP3060680B2 (ja) | 不揮発性半導体記憶装置 | |
| US4972371A (en) | Semiconductor memory device | |
| KR101309876B1 (ko) | 비휘발성 메모리 어레이 | |
| US5340760A (en) | Method of manufacturing EEPROM memory device | |
| KR100364040B1 (ko) | 반도체 기억 장치 및 그 제조 방법 | |
| US5189497A (en) | Semiconductor memory device | |
| US6696723B2 (en) | Electrically erasable, programmable, non-volatile memory device compatible with a CMOS/SOI production process | |
| JP3920550B2 (ja) | 不揮発性半導体記憶装置 | |
| US5604142A (en) | Method of making an EPROM with peripheral transistor | |
| US5252505A (en) | Method for manufacturing a semiconductor device | |
| US4586065A (en) | MNOS memory cell without sidewalk | |
| US20020048881A1 (en) | Dual bit isolation scheme for flash memory devices having polysilicon floating gates | |
| US5348898A (en) | Semiconductor device and method for manufacturing the same | |
| JPH0543301B2 (2) | ||
| JPH0421350B2 (2) | ||
| JP2544569B2 (ja) | 半導体記憶装置 |