JPH0371423A - Alumite substrate for magnetic disk and its production - Google Patents

Alumite substrate for magnetic disk and its production

Info

Publication number
JPH0371423A
JPH0371423A JP20846389A JP20846389A JPH0371423A JP H0371423 A JPH0371423 A JP H0371423A JP 20846389 A JP20846389 A JP 20846389A JP 20846389 A JP20846389 A JP 20846389A JP H0371423 A JPH0371423 A JP H0371423A
Authority
JP
Japan
Prior art keywords
substrate
grains
degassing
heated
aluminum alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20846389A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Nishizawa
西沢 和由
Hiroyuki Eda
浩之 江田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Altemira Co Ltd
Original Assignee
Showa Aluminum Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Aluminum Corp filed Critical Showa Aluminum Corp
Priority to JP20846389A priority Critical patent/JPH0371423A/en
Publication of JPH0371423A publication Critical patent/JPH0371423A/en
Pending legal-status Critical Current

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  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

PURPOSE:To prevent deformation or ruggedness of the surface of a substrate during heating for degassing or sputtering, by forming priorly larger grains in the substrate and eliminating the growth of the grains during heated for degassing. CONSTITUTION:The aluminum alloy substrate covered with an anodized film has average grain size of 50 - 500mum. Growth of the grains can be inhibited even when this substrate is heated for degassing of sputtering. Thereby, deformation of the substrate caused by growth of grains or ruggedness of the surface due to various again height on the substrate can be avoided. The obtd. disk has excellent dimensional precision and surface roughness, and has advantages for low-height floating of a head without causing head crash.

Description

【発明の詳細な説明】 産業上の利用分野 この発明は、コンピュータ等における磁気記録媒体とし
ての磁気ディスクを構成するアルマイト基板及びその製
造方法、特に磁性膜をスパッタ法により薄膜状に付着形
成せしめたスパッタ型磁気ディスクに用いられるアルマ
イト基板及びその製造方法に関する。
[Detailed Description of the Invention] Industrial Application Field The present invention relates to an alumite substrate constituting a magnetic disk as a magnetic recording medium in a computer, etc., and a method for manufacturing the same, in particular a method for depositing a magnetic film in the form of a thin film by sputtering. The present invention relates to an alumite substrate used in a sputter type magnetic disk and a method for manufacturing the same.

従来の技術 磁気ディスクとしては、従来より、アルミニウム基板の
表面に磁性媒体を塗布したいわゆる塗布型のものが用い
られているが、この塗布型ディスクでは磁性膜の厚さが
厚くならざるを得ないことから、昨今要求されている磁
気ディスクの高記録密度化に対処するには限界がある。
Conventional technology Conventionally, so-called coated type magnetic disks have been used, in which a magnetic medium is coated on the surface of an aluminum substrate, but with this coated type disks, the thickness of the magnetic film is unavoidable. Therefore, there is a limit to the ability to meet the recent demands for higher recording densities on magnetic disks.

そこで、アルミニウム基板表面にスパッタ法により磁性
媒体を薄膜状に付着形成せしめたスパッタ型の磁気ディ
スクが開発提供されるようになってきている。
Therefore, sputter-type magnetic disks in which a magnetic medium is deposited as a thin film on the surface of an aluminum substrate by sputtering have been developed and provided.

かかるスバッダ型磁気ディスク用のアルミニウム基板と
しては、表面硬度の向上、磁性膜との密着性の向上等を
目的として、その表面に陽極酸化皮膜が形成されたアル
マイト基板が一般に用いられている。
As an aluminum substrate for such a Subaddha type magnetic disk, an alumite substrate having an anodic oxide film formed on its surface is generally used for the purpose of improving surface hardness and adhesion with a magnetic film.

発明が解決しようとする課題 ところで、」二足のアルマイト基板では、陽極酸化皮膜
中の水やCO2を除去する脱ガス処理のため、研磨後2
00〜400℃程度の温度で基板に加熱処理を施すここ
がある。また、その後の磁性膜形成のためのスパッタ時
において、磁性膜の保持力向上を目的として400℃前
後あるいはそれ以上の温度に基板を加熱することがある
Problems to be Solved by the Invention By the way, with two pairs of alumite substrates, the second step after polishing is due to degassing treatment to remove water and CO2 from the anodic oxide film.
There is a method in which the substrate is subjected to heat treatment at a temperature of about 00 to 400 degrees Celsius. Further, during sputtering for subsequent formation of a magnetic film, the substrate may be heated to a temperature of around 400° C. or higher for the purpose of improving the coercive force of the magnetic film.

ところが、脱ガス時の加熱あるいはスパッタ時の加熱に
より基板が変形したり、さらには基板に凹凸を生じひい
ては磁性膜表面に微妙な凹凸を生じるという欠点があっ
た。かかる欠点は、磁気ディスクにおけるヘッドクラッ
シュの発生原因となったり、ヘッドの低浮上化の妨げと
なるというような問題につながるものであった。
However, there have been disadvantages in that the substrate is deformed by heating during degassing or heating during sputtering, and further, unevenness occurs on the substrate, resulting in subtle unevenness on the surface of the magnetic film. Such drawbacks have led to problems such as causing head crashes in magnetic disks and hindering lower flying height of the head.

この発明は、かかる技術的背景に鑑みてなされたもので
あって、脱ガス時の加熱やスノク・フタ時の加熱を実施
しても、基板の変形や表面凹凸を生じないアルマイト基
板の提供を目的とする。
The present invention has been made in view of the above technical background, and an object of the present invention is to provide an alumite substrate that does not cause deformation or surface unevenness even when heated during degassing or during heating with a lid. purpose.

課題を解決するための手段 上記目的を達成するために、この発明は、加熱による基
板の変形や凹凸の発生が加熱時の基板の結晶粒の成長に
起因していることに鑑み、基板の結晶粒を予め大きくし
ておくことによって、脱ガス加熱時等における結晶粒の
成長をなくし、ひいては上記欠点をなくそうというもの
である。
Means for Solving the Problems In order to achieve the above-mentioned object, the present invention is based on the fact that the deformation and unevenness of a substrate due to heating are caused by the growth of crystal grains of the substrate during heating. By making the grains larger in advance, it is possible to eliminate the growth of crystal grains during degassing and heating, thereby eliminating the above-mentioned drawbacks.

即ちこの発明は、表面に陽極酸化皮膜が形成されたアル
ミニウム合金基板の平均結晶粒径が50〜500μmに
規定されていることを特徴とする磁気ディスク用アルマ
イト基板を要旨とするものであり、さらにはまた、アル
ミニウム合金基板を、温度=400℃以上かつスパッタ
時の基板の温度以上であって500℃以下、時間=1分
〜10時間の条件で加熱【またのち、陽極酸化処理する
ことを特徴とする磁気ディスク用アルマイト基板の製造
方法を要旨とするものである。
That is, the gist of the present invention is an alumite substrate for a magnetic disk, characterized in that the average crystal grain size of the aluminum alloy substrate on which an anodized film is formed is defined to be 50 to 500 μm; Also, an aluminum alloy substrate is heated at a temperature of 400°C or higher, the temperature of the substrate at the time of sputtering, but 500°C or lower, and a time of 1 minute to 10 hours. The gist of this paper is a method of manufacturing an alumite substrate for magnetic disks.

まず、アルミニウム合金基板としては、−膜内にはA塁
−Mg系合金やA、Q−Mg−Cu系合金、具体的には
Mg:3〜5vt%程度を含有しあるいはさらにCu:
Q、Q5〜Q、4vt%程度を含有し、残部がアルミニ
ウム及び不可避不純物からなるものが用いられる。さら
に好ましくは残部組成を1純度99.99%とするのが
良い。上記組成において、Mgは磁気ディスクとしての
高速回転に耐えうる強度を付与するための元素である。
First, as an aluminum alloy substrate, the film contains an A base-Mg alloy, an A, Q-Mg-Cu alloy, specifically Mg: about 3 to 5 vt%, or further Cu:
A material containing about 4 vt% of Q, Q5 to Q, and the remainder consisting of aluminum and unavoidable impurities is used. More preferably, the balance composition is 1 with a purity of 99.99%. In the above composition, Mg is an element that provides strength to withstand high-speed rotation as a magnetic disk.

しかし、その含有量が3vt%未満では該効果に乏しく
、逆に5wt%を超えると加工性、機械的性質、表面平
滑性が劣化する危険がある。また、Cuも基板の強度向
上に寄与するものであるが、0.05wt%未満ではそ
の効果がなく、逆に0,4wt%を超えるとやはり加工
性、表面平滑性等の欠点を派生する危険がある。
However, if the content is less than 3 wt%, the effect will be poor, and if it exceeds 5 wt%, there is a risk that processability, mechanical properties, and surface smoothness will deteriorate. In addition, Cu also contributes to improving the strength of the substrate, but if it is less than 0.05wt%, it has no effect, and if it exceeds 0.4wt%, there is a risk of demerits such as workability and surface smoothness. There is.

アルミニウム合金基板の平均結晶粒径が50〜500μ
mに規定されるのは、50μm未満では脱ガスのための
アルマイト基板の加熱やスパッタ時の加熱の際に結晶粒
がなお成長し、無視できない基板の変形や粒界段差の発
生による表面凹凸を生じるからである。逆に平均結晶粒
径が500μmを超える場合には、結晶粒が粗大すぎる
ため、陽極酸化処理前にアルミニウム合金基板自体に施
すターニング、グラインディング、ダイヤモンドターニ
ング等の加工後、基板表面の粗度が悪くなる。特に好適
には150〜300μmが良い。
The average grain size of the aluminum alloy substrate is 50 to 500μ
m is specified because if it is less than 50 μm, crystal grains will still grow during heating of the alumite substrate for degassing or during sputtering, and surface irregularities due to non-negligible deformation of the substrate and generation of grain boundary steps will occur. This is because it occurs. On the other hand, if the average crystal grain size exceeds 500 μm, the crystal grains are too coarse, and the roughness of the substrate surface may be reduced after turning, grinding, diamond turning, etc. are applied to the aluminum alloy substrate itself before anodizing treatment. Deteriorate. Particularly preferably, the thickness is 150 to 300 μm.

アルミニウム合金基板の表面に被覆形成された陽極酸化
皮膜の種類は特に限定されないが、硬度、耐熱性に優れ
ているこεから蓚酸皮膜が良い。膜厚は片面5〜20μ
m程度とするのが良い。
The type of anodic oxide film formed on the surface of the aluminum alloy substrate is not particularly limited, but an oxalic acid film is preferable because it has excellent hardness and heat resistance. Film thickness is 5-20μ on one side
It is best to set it to about m.

アルミニウム合金基板の平均結晶粒径が50〜500μ
mである上記のアルマイト基板の製造方法は特に限定さ
れるものではないが、好適な製造方法εしてこの発明に
係る製造方法を挙げうる。まず、平均結晶粒径を50μ
m以上に規定するために、所定形状に加工したアルミニ
ウム合金基板を400℃以上で1分以上加熱する。40
0℃未満または1分未満ではいずれも結晶粒が未成長と
なり、その後に施す脱ガス加熱時やスパッタの際の加熱
により結晶粒が再成長して、基板の変形や微細凹凸を生
じる。なお、スパッタ時の基板の加熱温度が400℃を
超える場合には、アルミニウム合金基板の加熱は、スパ
ッタ加熱時の結晶粒の再成長を抑制するため、スパッタ
時の基板温度以上の温度で行う必要がある。一方、アル
ミニウム合金基板の平均結晶粒径を500μm以下に規
定するために、アルミニウム合金基板を500℃以下の
温度で加熱しなければならない。また、加熱時間は10
時間以下としなければならない。加熱時間が10時間を
超えると、基板内の析出物が表面に成長して陽極酸化処
理時に皮膜欠陥となるからである。
The average grain size of the aluminum alloy substrate is 50 to 500μ
Although the method for manufacturing the alumite substrate described above is not particularly limited, the manufacturing method according to the present invention can be cited as a preferred manufacturing method ε. First, the average crystal grain size is 50μ
In order to specify the temperature to be at least m, an aluminum alloy substrate processed into a predetermined shape is heated at 400° C. or higher for 1 minute or more. 40
If the temperature is less than 0° C. or less than 1 minute, the crystal grains will not grow, and the crystal grains will re-grow due to subsequent heating during degassing or sputtering, resulting in deformation of the substrate and fine irregularities. In addition, if the heating temperature of the substrate during sputtering exceeds 400°C, the aluminum alloy substrate must be heated at a temperature higher than the substrate temperature during sputtering in order to suppress the regrowth of crystal grains during sputtering heating. There is. On the other hand, in order to specify the average crystal grain size of the aluminum alloy substrate to be 500 μm or less, the aluminum alloy substrate must be heated at a temperature of 500° C. or less. Also, the heating time is 10
It must be less than an hour. This is because if the heating time exceeds 10 hours, precipitates within the substrate will grow on the surface and cause film defects during the anodizing treatment.

上記加熱後、アルミニウム合金基板にターニング、グラ
インディング、ダイヤモンドターニングを施したのち、
陽極酸化処理を実施して基板表面に片面5〜20μm程
度の陽極酸化皮膜を形成しアルマイト基板とする。陽極
酸化処理は前述のごとく蓚酸法による処理が望ましい。
After the above heating, the aluminum alloy substrate is subjected to turning, grinding, and diamond turning.
An anodic oxidation treatment is performed to form an anodic oxide film of about 5 to 20 μm on one side on the surface of the substrate to obtain an alumite substrate. The anodizing treatment is preferably performed by the oxalic acid method as described above.

具体的な蓚酸処理法としては、蓚酸電解浴中での定電流
電解処理とか、特に好ましい電解処理法として電流回復
法つまり処理を前後2段で行い、後段処理を前段の処理
電圧から急激に低下させたのち定電圧にて行う方法を挙
げうる。
Specific oxalic acid treatment methods include constant current electrolysis treatment in an oxalic acid electrolytic bath, and a particularly preferred electrolytic treatment method is the current recovery method, in which the treatment is carried out in two stages, one before and the other, and the second stage treatment is rapidly lowered from the first stage treatment voltage. One example is a method in which the voltage is applied at a constant voltage.

上記により製作したアルマイト基板は、次いでその表面
を陽極酸化皮膜の厚さが片面5〜110l1となる程度
に研磨したのち、200〜b化皮膜の脱ガス処理を行う
。基板は陽極酸化処理前に予め加熱されて平均結晶粒径
が50μm〜500μmに成長しているから、この脱ガ
ス加熱による結晶粒の再成長は抑制される。
The surface of the alumite substrate produced as described above is then polished to such an extent that the anodic oxide film has a thickness of 5 to 110 liters on one side, and then the 200 to B coating is degassed. Since the substrate is heated in advance before the anodizing treatment to grow the average crystal grain size to 50 μm to 500 μm, regrowth of the crystal grains due to this degassing heating is suppressed.

その後スパッタ法により基板表面に磁性薄膜を付着形成
する。高記録密度化を図るため、スパッタに際して基板
は300〜450℃に加熱保持されるが、この場合も基
板の結晶粒の再成長は抑制される。
Thereafter, a magnetic thin film is deposited on the substrate surface by sputtering. In order to achieve high recording density, the substrate is heated and maintained at 300 to 450° C. during sputtering, but in this case as well, regrowth of crystal grains in the substrate is suppressed.

発明の効果 この発明は上述の次第で、表面に陽極酸化皮膜が形成さ
れたアルミニウム合金基板の平均結晶粒径が50〜50
0μmであるから、このアルマイト基板をその後脱ガス
時あるいはスノク・フタ時に加熱しても、もはや基板の
結晶粒の成長は抑制される。従って、結晶粒の成長に起
因する基板の変形や粒界段差による基板表面の微細凹凸
の発生を回避することができる。その結果、寸法精度、
表面粗度に優れ、ひいてはへ・ソドクラッシュの生じな
いかつヘッドの低浮上化に対して有利な磁気ディスクと
なしうる。
Effects of the Invention As described above, the present invention provides an aluminum alloy substrate having an anodic oxide film formed on its surface with an average crystal grain size of 50 to 50.
Since it is 0 .mu.m, even if this alumite substrate is subsequently heated during degassing or during a snok lid, the growth of crystal grains on the substrate is no longer suppressed. Therefore, it is possible to avoid deformation of the substrate due to the growth of crystal grains and generation of minute irregularities on the substrate surface due to grain boundary steps. As a result, dimensional accuracy,
A magnetic disk with excellent surface roughness, which does not cause head/socket crashes and is advantageous for lowering the flying height of the head, can be obtained.

また、アルミニウム合金基板を、温度:400℃以上か
つスパッタ時の基板の温度以上であって500℃以下、
時間=1分〜10時間の条件で加熱したのち、陽極酸化
処理することにより、アルミニウム合金基板の平均結晶
粒径が50〜500μmに規定されたアルマイト基板を
確実に製作することができる。
In addition, the aluminum alloy substrate is heated at a temperature of 400°C or higher and the temperature of the substrate during sputtering but not higher than 500°C.
By heating under the conditions of time = 1 minute to 10 hours and then anodizing, it is possible to reliably produce an alumite substrate having an average crystal grain size of 50 to 500 μm.

実施例 次に、この発明の詳細な説明する。Example Next, the present invention will be explained in detail.

AjJ−4wt%Mg−0,1,wt%Cu合金からな
るアルミニウム合金基板(外径95腐、内径25m、板
厚1.3m)を複数枚用意し、該基板の表面を平滑仕上
げしたのち、第1表に示す条件で加熱した。そして、加
熱後の基板表面の平均結晶粒径を測定したところ、第1
表のとおりであった。
After preparing a plurality of aluminum alloy substrates (outer diameter 95mm, inner diameter 25m, plate thickness 1.3m) made of AjJ-4wt%Mg-0,1,wt%Cu alloy, and smoothing the surface of the substrate, Heating was performed under the conditions shown in Table 1. Then, when we measured the average crystal grain size on the substrate surface after heating, we found that the first
It was as shown in the table.

次に、上記各アルミニウム基板に蓚酸性陽極酸化処理を
施して表面に蓚酸皮膜を被覆形成した。なお、陽極酸化
処理は以下に従った。即ち、蓚酸濃度:〕、5νt%、
液温:30℃の蓚酸電解液中で電流密度1.5A/dr
lt、電解時間:30分の条件でまず直流電解処理によ
る前段の陽極酸化処理を行った。次いで、一端通電を止
めたのち、同一電解液中で、36Vの定電圧で直流電解
処理による後段の陽極酸化処理を行った。皮膜厚さは片
面10μmとした。
Next, each of the aluminum substrates was subjected to an oxalic acid anodic oxidation treatment to form an oxalic acid film on the surface. Note that the anodizing treatment was performed in accordance with the following. That is, oxalic acid concentration: ], 5νt%,
Liquid temperature: Current density 1.5A/dr in oxalic acid electrolyte at 30℃
lt, electrolysis time: 30 minutes, firstly, a preliminary anodization treatment by direct current electrolysis treatment was performed. Next, after the electricity was turned off at one end, a subsequent anodization process was performed by direct current electrolytic treatment at a constant voltage of 36 V in the same electrolytic solution. The film thickness was 10 μm on one side.

次に、上記により得た各種アルマイト基板を、第1表に
示す温度で加熱し、加熱前後の基板の平面度の変化を調
べた。その結果を同じく第1表に示す。
Next, the various alumite substrates obtained above were heated at the temperatures shown in Table 1, and changes in the flatness of the substrates before and after heating were examined. The results are also shown in Table 1.

[以下余白] 第1表の結果から明らかなように、本発明実施品は、陽
極酸化処理後に加熱されても良好な平面度を維持してお
り、従って基板の変形や表面凹凸を抑制しうろことを確
認しえた。
[Margins below] As is clear from the results in Table 1, the products of the present invention maintain good flatness even when heated after anodizing treatment, and therefore suppress deformation of the substrate and surface unevenness, and reduce scales. I was able to confirm that.

以上that's all

Claims (2)

【特許請求の範囲】[Claims] (1)表面に陽極酸化皮膜が形成されたアルミニウム合
金基板の平均結晶粒径が50〜500μmに規定されて
いることを特徴とする磁気ディスク用アルマイト基板。
(1) An alumite substrate for a magnetic disk, characterized in that the aluminum alloy substrate has an anodic oxide film formed on its surface and has an average grain size of 50 to 500 μm.
(2)アルミニウム合金基板を、 温度:400℃以上かつスパッタ時の基板の温度以上で
あって500℃以下、 時間:1分〜10時間 の条件で加熱したのち、陽極酸化処理することを特徴と
する磁気ディスク用アルマイト基板の製造方法。
(2) The aluminum alloy substrate is heated at a temperature of 400°C or higher, higher than the temperature of the substrate during sputtering and 500°C or lower, for 1 minute to 10 hours, and then anodized. A method for manufacturing an alumite substrate for magnetic disks.
JP20846389A 1989-08-10 1989-08-10 Alumite substrate for magnetic disk and its production Pending JPH0371423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20846389A JPH0371423A (en) 1989-08-10 1989-08-10 Alumite substrate for magnetic disk and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20846389A JPH0371423A (en) 1989-08-10 1989-08-10 Alumite substrate for magnetic disk and its production

Publications (1)

Publication Number Publication Date
JPH0371423A true JPH0371423A (en) 1991-03-27

Family

ID=16556602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20846389A Pending JPH0371423A (en) 1989-08-10 1989-08-10 Alumite substrate for magnetic disk and its production

Country Status (1)

Country Link
JP (1) JPH0371423A (en)

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