JPH0371658U

JPH0371658U -

Info

Publication number: JPH0371658U
Application number: JP13322889U
Authority: JP
Priority date: 1989-11-15
Filing date: 1989-11-15
Publication date: 1991-07-19

Description

[Brief explanation of the drawing]

第１図ａ，ｂは本考案の一実施例の断面構造模
式図及び上面図、第２図は別の実施例の断面構造
模式図、第３図は従来例の断面構造模式図、第４
図は従来の他の例の上面図である。図中、１，１３……半絶縁性ＩｎＰ基板、２，
４……ｎ^＋−ＩｎＧａＡｓ、３，１４……ｎ⁻−
ＩｎＧａＡｓ、５，７，１２……ｎ^＋−ＩｎＧａ
ＡｓＰ、６，１１……ｎ⁻−ＩｎＧａＡｓＰ、８
，９，１０，１５，１６，１７，１８……電極、
を各々示す。 1A and 1B are a schematic cross-sectional structure diagram and a top view of one embodiment of the present invention, FIG. 2 is a schematic cross-sectional structure diagram of another embodiment, FIG. 3 is a schematic cross-sectional structure diagram of a conventional example, and FIG.
The figure is a top view of another conventional example. In the figure, 1, 13...semi-insulating InP substrate, 2,
4...n ⁺ -InGaAs, 3,14...n ^- -
InGaAs, 5,7,12...n ⁺ -InGa
AsP, 6,11...n ^-- InGaAsP, 8
, 9, 10, 15, 16, 17, 18...electrodes,
are shown respectively.

Claims

[Scope of utility model registration request]

On a semi-insulating semiconductor substrate, a plurality of high-concentration semiconductor layers with a band gap _E1 , each exhibiting the same conductivity type, and a low-concentration semiconductor layer with a band gap _E1 , which is one layer smaller than the high-concentration semiconductor layers, are alternately laminated. Further, on this layered structure, a plurality of high concentration semiconductor layers with a band gap E ₂ (E ₂ >E ₁ ) and a low concentration semiconductor layer with a band gap E ₂ which is one layer less than the high concentration semiconductor layers are provided. 1. A photoconductive semiconductor light-receiving element, characterized in that it has a laminated structure in which layers are alternately laminated, and the surface of the laminated structure made of semiconductor layers with a band gap _E2 is used as a light-receiving surface.