JPH0374663U - - Google Patents
Info
- Publication number
- JPH0374663U JPH0374663U JP13606789U JP13606789U JPH0374663U JP H0374663 U JPH0374663 U JP H0374663U JP 13606789 U JP13606789 U JP 13606789U JP 13606789 U JP13606789 U JP 13606789U JP H0374663 U JPH0374663 U JP H0374663U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- plasma
- substrate
- thin film
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第1図は本考案の一実施例に係るプラズマCV
D装置の電極構造を示す図、第2図は第1図に示
す電極構造の斜視図、第3図は第1図並びに第2
図に示す電極構造を持つプラズマCVD装置の構
成を示す図、第4図は従来のプラズマCVD装置
の電極構造を示す図に、第5図は基板がセツトさ
れない側の改良された従来の電極を示す図である
。
11……平板電極(第1の電極)、12……い
かだ状電極(第2の電極)、13……基板、14
……材料ガス、15……プラズマ電源、16……
真空チヤンバー、17……ガス導入口、18……
ヒータ、19……プラズマ。
FIG. 1 shows a plasma CV according to an embodiment of the present invention.
2 is a perspective view of the electrode structure shown in FIG. 1, and FIG. 3 is a diagram showing the electrode structure of the device D.
4 is a diagram showing the configuration of a plasma CVD apparatus having the electrode structure shown in FIG. 4. FIG. 4 is a diagram showing the electrode structure of a conventional plasma CVD apparatus. FIG. FIG. 11... Flat plate electrode (first electrode), 12... Raft-shaped electrode (second electrode), 13... Substrate, 14
...Material gas, 15...Plasma power supply, 16...
Vacuum chamber, 17... Gas inlet, 18...
Heater, 19...Plasma.
Claims (1)
の電極と、この第1の電極と離間対向して平行に
設けられる第2の電極とを備え、上記第1及び第
2の電極間にプラズマを発生させ且つ上記第2の
電極背面側から材料ガスを導入することにより上
記基板に薄膜を形成するのに供されるプラズマC
VD装置の電極構造において、上記第2の電極を
、多数の細長の電極片が間隔を保つて並設された
いかだ状構造としたことを特徴とするプラズマC
VD装置の電極構造。 The first stage is where the substrate on which the thin film is to be formed is set.
and a second electrode provided parallel to and spaced apart from the first electrode, the plasma is generated between the first and second electrodes, and the material is discharged from the back side of the second electrode. plasma C, which is provided for forming a thin film on the substrate by introducing a gas;
In the electrode structure of the VD device, the second electrode has a raft-like structure in which a large number of elongated electrode pieces are arranged in parallel at intervals.
Electrode structure of VD device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13606789U JPH0374663U (en) | 1989-11-27 | 1989-11-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13606789U JPH0374663U (en) | 1989-11-27 | 1989-11-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0374663U true JPH0374663U (en) | 1991-07-26 |
Family
ID=31683297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13606789U Pending JPH0374663U (en) | 1989-11-27 | 1989-11-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0374663U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013147437A1 (en) * | 2012-03-28 | 2013-10-03 | (주)지니아텍 | Hybrid radical plasma graphene etching apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6257710A (en) * | 1985-09-06 | 1987-03-13 | Sumitomo Metal Ind Ltd | Surface conditioning method for shape steel |
-
1989
- 1989-11-27 JP JP13606789U patent/JPH0374663U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6257710A (en) * | 1985-09-06 | 1987-03-13 | Sumitomo Metal Ind Ltd | Surface conditioning method for shape steel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013147437A1 (en) * | 2012-03-28 | 2013-10-03 | (주)지니아텍 | Hybrid radical plasma graphene etching apparatus |