JPH0374663U - - Google Patents

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Publication number
JPH0374663U
JPH0374663U JP13606789U JP13606789U JPH0374663U JP H0374663 U JPH0374663 U JP H0374663U JP 13606789 U JP13606789 U JP 13606789U JP 13606789 U JP13606789 U JP 13606789U JP H0374663 U JPH0374663 U JP H0374663U
Authority
JP
Japan
Prior art keywords
electrode
plasma
substrate
thin film
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13606789U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13606789U priority Critical patent/JPH0374663U/ja
Publication of JPH0374663U publication Critical patent/JPH0374663U/ja
Pending legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の一実施例に係るプラズマCV
D装置の電極構造を示す図、第2図は第1図に示
す電極構造の斜視図、第3図は第1図並びに第2
図に示す電極構造を持つプラズマCVD装置の構
成を示す図、第4図は従来のプラズマCVD装置
の電極構造を示す図に、第5図は基板がセツトさ
れない側の改良された従来の電極を示す図である
。 11……平板電極(第1の電極)、12……い
かだ状電極(第2の電極)、13……基板、14
……材料ガス、15……プラズマ電源、16……
真空チヤンバー、17……ガス導入口、18……
ヒータ、19……プラズマ。
FIG. 1 shows a plasma CV according to an embodiment of the present invention.
2 is a perspective view of the electrode structure shown in FIG. 1, and FIG. 3 is a diagram showing the electrode structure of the device D.
4 is a diagram showing the configuration of a plasma CVD apparatus having the electrode structure shown in FIG. 4. FIG. 4 is a diagram showing the electrode structure of a conventional plasma CVD apparatus. FIG. FIG. 11... Flat plate electrode (first electrode), 12... Raft-shaped electrode (second electrode), 13... Substrate, 14
...Material gas, 15...Plasma power supply, 16...
Vacuum chamber, 17... Gas inlet, 18...
Heater, 19...Plasma.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 薄膜形成の対象となる基板がセツトされる第1
の電極と、この第1の電極と離間対向して平行に
設けられる第2の電極とを備え、上記第1及び第
2の電極間にプラズマを発生させ且つ上記第2の
電極背面側から材料ガスを導入することにより上
記基板に薄膜を形成するのに供されるプラズマC
VD装置の電極構造において、上記第2の電極を
、多数の細長の電極片が間隔を保つて並設された
いかだ状構造としたことを特徴とするプラズマC
VD装置の電極構造。
The first stage is where the substrate on which the thin film is to be formed is set.
and a second electrode provided parallel to and spaced apart from the first electrode, the plasma is generated between the first and second electrodes, and the material is discharged from the back side of the second electrode. plasma C, which is provided for forming a thin film on the substrate by introducing a gas;
In the electrode structure of the VD device, the second electrode has a raft-like structure in which a large number of elongated electrode pieces are arranged in parallel at intervals.
Electrode structure of VD device.
JP13606789U 1989-11-27 1989-11-27 Pending JPH0374663U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13606789U JPH0374663U (en) 1989-11-27 1989-11-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13606789U JPH0374663U (en) 1989-11-27 1989-11-27

Publications (1)

Publication Number Publication Date
JPH0374663U true JPH0374663U (en) 1991-07-26

Family

ID=31683297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13606789U Pending JPH0374663U (en) 1989-11-27 1989-11-27

Country Status (1)

Country Link
JP (1) JPH0374663U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013147437A1 (en) * 2012-03-28 2013-10-03 (주)지니아텍 Hybrid radical plasma graphene etching apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6257710A (en) * 1985-09-06 1987-03-13 Sumitomo Metal Ind Ltd Surface conditioning method for shape steel

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6257710A (en) * 1985-09-06 1987-03-13 Sumitomo Metal Ind Ltd Surface conditioning method for shape steel

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013147437A1 (en) * 2012-03-28 2013-10-03 (주)지니아텍 Hybrid radical plasma graphene etching apparatus

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