JPH0376406A - Bias voltage setting circuit - Google Patents
Bias voltage setting circuitInfo
- Publication number
- JPH0376406A JPH0376406A JP1212282A JP21228289A JPH0376406A JP H0376406 A JPH0376406 A JP H0376406A JP 1212282 A JP1212282 A JP 1212282A JP 21228289 A JP21228289 A JP 21228289A JP H0376406 A JPH0376406 A JP H0376406A
- Authority
- JP
- Japan
- Prior art keywords
- differential amplifier
- output
- resistor
- inverting input
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【発明の詳細な説明】
本発明はバイアス設定回路に関し、特に半導体集積回路
に用いられ、外部から調整可能なバイアス電圧設定回路
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bias setting circuit, and more particularly to a bias voltage setting circuit that is used in a semiconductor integrated circuit and can be adjusted from the outside.
従来この種のバイアス電圧設定回路としては第2図に示
されているような回路がある。Ql〜Q6はトランジス
タ、R10およびR11は抵抗。As a conventional bias voltage setting circuit of this type, there is a circuit as shown in FIG. Ql to Q6 are transistors, and R10 and R11 are resistors.
RADJIは可変抵抗、Vヤアは基準電圧源、A5は差
動増幅回路、Vccは電源、■。、J7.およびV。T
JT□は出力電圧、TIは可変抵抗RADjI(以下、
可変抵抗は略す)接続用端子であり、RADJI以外は
半導体集積回路内部に形成される。RADJI is a variable resistor, Vya is a reference voltage source, A5 is a differential amplifier circuit, Vcc is a power supply, ■. , J7. and V. T
JT□ is the output voltage, TI is the variable resistance RADjI (hereinafter referred to as
(variable resistor is omitted) is a connection terminal, and all terminals other than RADJI are formed inside the semiconductor integrated circuit.
次にこの回路の動作を説明する。基準電圧源■R□、(
以下VR11Fと略す)は差動増幅回路A5(以下A5
等と呼び差動増幅回路は略す)の非反転入力に接続され
ており、トランジスタQ6 (以下Q6等と呼びトラン
ジスタは略す)はエミッタホロワ接続になっており、Q
6のエミッタからA5の反転入力に全帰還がかけられて
いるので端子T2にはほぼV RIPに等しい電位が発
生する。Next, the operation of this circuit will be explained. Reference voltage source ■R□, (
The differential amplifier circuit A5 (hereinafter abbreviated as VR11F) is the differential amplifier circuit A5 (hereinafter referred to as A5
The transistor Q6 (hereinafter referred to as Q6, etc. and the transistor is omitted) is connected to the non-inverting input of a
Since full feedback is applied from the emitter of A5 to the inverting input of A5, a potential approximately equal to VRIP is generated at terminal T2.
したがって、Q6のエミッタ電流はV RlF / R
ADJで表され、したがってQ6のベース接地電流増幅
率がほぼ1であるから、Q4.Q5からなるカレントミ
ラー回路の入力電流もほぼV R1!F / RADZ
で決定される。よって抵抗RIOおよびR11を流れる
電流もほぼV RIIF/ RADJとなりさらに抵抗
R10(以下抵抗は略す)とR11の接続点にはVRg
アが接続されているのでRIOおよびR11の抵抗値が
等しくRoとすれば、出力電圧■。UT。Therefore, the emitter current of Q6 is V RlF / R
ADJ, and therefore, since the common base current amplification factor of Q6 is approximately 1, Q4. The input current of the current mirror circuit consisting of Q5 is also approximately V R1! F/RADZ
determined by Therefore, the current flowing through resistors RIO and R11 also becomes approximately VRIF/RADJ, and furthermore, there is VRg at the connection point between resistor R10 (hereinafter referred to as "resistance") and R11.
Since A is connected, if the resistance values of RIO and R11 are equal and Ro is the output voltage. U.T.
及びV。t、?2の様な外部から調整可能で基準電圧V
RIIPについて対称な2つの電圧は、VRlIPを基
準として動作する集積回路のウィンドウコンパレータ用
のしきい値電圧等として多く用いられる。and V. T,? The reference voltage V can be adjusted externally like 2.
Two voltages that are symmetrical about RIIP are often used as threshold voltages for window comparators of integrated circuits that operate with VRlIP as a reference.
次に、第3図にはこの種のバイアス電圧設定回路の別の
従来例が示しである。IADJIおよびIADJIは電
流源、 RAD、、およびRADJ2は可変抵抗、■。Next, FIG. 3 shows another conventional example of this type of bias voltage setting circuit. IADJI and IADJI are current sources, RAD, and RADJ2 are variable resistors, ■.
UTIおよび■。tlT2は出力電圧、 Vnzyは基
準電圧、Vccは電源、T3〜T5はRADJ lおよ
び’RAD、2接続用端子でRADJlおよびRADJ
2以外は半導体集積回路内部で形成される。UTI and ■. tlT2 is the output voltage, Vnzy is the reference voltage, Vcc is the power supply, T3 to T5 are RADJ l and 'RAD, 2 connection terminals, RADJl and RADJ.
The others other than 2 are formed inside the semiconductor integrated circuit.
次にこの回路の動作を説明する。電流源IADJ+およ
びIADJ2の電流値が等しくIo、抵抗RADJIお
よびRADJIの抵抗値が等しくRo、基準電圧端子T
4に基準電圧VR,,を与えれば出力電圧■。υ丁。Next, the operation of this circuit will be explained. The current values of current sources IADJ+ and IADJ2 are equal Io, the resistance values of resistors RADJI and RADJI are equal Ro, and the reference voltage terminal T
If the reference voltage VR, , is given to 4, the output voltage is ■. υ ding.
および■。tlT□はそれぞれV□y+ Ro I o
、vitzアーR,I。のバイアス電圧が設定される。and■. tlT□ is V□y+ Ro I o
, VitzA R,I. The bias voltage is set.
そしてこれらの2つのV□2について対称な2つの電圧
は従来例1同様ウインドウフンパレータ用のしきい値電
圧等に多用される。These two voltages that are symmetrical with respect to V□2 are often used as threshold voltages for window pumps, etc., as in the prior art example 1.
上述した従来のバイアス電圧設定回路は第2図の回路に
おいては、RIOおよびR11は半導体集積回路内部に
形成された内部抵抗であり、可変抵抗RADJIは外付
抵抗である。したがって半導体集積回路では内部抵抗の
バラツキが生じるために、上述したように、出力電圧が
■R8F (1,+−)、RAD1
R11の抵抗値R0が影響するため、VRlIPおよび
RADJの値が既知であっても内部抵抗R0の値がバラ
ツキにより、正確々電圧値が得られないという欠点があ
る。In the conventional bias voltage setting circuit described above, in the circuit shown in FIG. 2, RIO and R11 are internal resistances formed inside the semiconductor integrated circuit, and variable resistance RADJI is an external resistance. Therefore, since variations in internal resistance occur in semiconductor integrated circuits, as mentioned above, the output voltage is affected by the resistance value R0 of ■R8F (1, +-) and RAD1 R11, so the values of VRlIP and RADJ are known. Even if there is, there is a drawback that an accurate voltage value cannot be obtained due to variations in the value of the internal resistance R0.
またQ4.Q5で構成されるカレントミラー回路におい
て、入力電流に対し出力電流はQ4とQ5のベース電流
分、即ち21.たけ損失する。したがって、RIOおよ
びR11を流れる電流には2Ibだけ差が生じゆえにR
IOおよびR11の抵抗値が等しくとも、出力電圧V。Also Q4. In the current mirror circuit composed of Q5, the output current is equal to the input current equal to the base current of Q4 and Q5, that is, 21. Lose a lot. Therefore, there is a difference of 2Ib between the currents flowing through RIO and R11, so R
Even if the resistance values of IO and R11 are equal, the output voltage V.
IJTIおよびV。。ア。IJTI and V. . a.
はv、2を基準とした場合対称なバイアス電圧を得られ
なくなるという欠点があり、さらにQ4およびQ5のエ
ミッタ接地電流増幅率が低いほど2Ibは大きくなるの
でこの欠点はより著しいものになる。has the disadvantage that it is impossible to obtain a symmetrical bias voltage when V, 2 is used as a reference, and furthermore, the lower the common emitter current amplification factors of Q4 and Q5, the larger 2Ib becomes, so this disadvantage becomes more significant.
また出力電圧■。Mlおよび■。、j?2に接続される
回路のバイアス電流によってRIOおよびR11を流れ
る電流値が変動し、ゆえに出力電圧V。tlTl r■
。υ11が変動するという欠点をもつ。さらにVREF
るがこの値を小さく設定するためには可変抵抗であるR
ADJIを極めて大きな値に設定するしかなくゆえにこ
の場合の調整が困難になるという欠点をもつ。Also, the output voltage ■. Ml and ■. ,j? The bias current of the circuit connected to RIO and R11 changes the current value flowing through RIO and R11, and therefore the output voltage V. tlTl r■
. It has the disadvantage that υ11 fluctuates. Further VREF
However, in order to set this value small, a variable resistor R
This has the disadvantage that adjustment in this case is difficult because ADJI must be set to an extremely large value.
次に第3図の回路においてはRADJIおよびRAD。Next, in the circuit of FIG. 3, RADJI and RAD.
接続用端子がT3〜T5と3端子必要となり半導体集積
回路を構成する上で端子数増加はコスト面等で不利にな
るという欠点がある。さらに出力電圧調整に必要である
ところの可変抵抗はRADJI及びRAnzzと2つ必
要であり、ゆえに外付部品数増加によるコスト面の不利
を生じるという欠点をもつ。また第2図の回路の場合と
同様に出力電圧■。IJTIおよびV。IJTIに接続
される回路のバイアス電流によってRAI)J1% R
ADJ2を流れる電流が変動し、ゆえにバイアス電圧が
変動するという欠点をもつ。Three connection terminals T3 to T5 are required, and an increase in the number of terminals is disadvantageous in terms of cost and the like when constructing a semiconductor integrated circuit. Furthermore, two variable resistors, RADJI and RAnz, are required for adjusting the output voltage, which has the disadvantage of increasing the number of external components, resulting in a cost disadvantage. Also, as in the case of the circuit in Figure 2, the output voltage ■. IJTI and V. RAI) J1% R due to the bias current of the circuit connected to IJTI
This has the drawback that the current flowing through ADJ2 fluctuates and therefore the bias voltage fluctuates.
本発明の目的は、バイアス電圧を正確に設定でき、しか
も出力端子に接続される回路のバイアス電流による影響
が受けにくく、更に端子数および外付は部品を最小限に
することができるバイアス電圧設定回路を提供すること
にある。An object of the present invention is to provide a bias voltage setting that allows accurate setting of bias voltage, is less affected by bias current of a circuit connected to an output terminal, and further minimizes the number of terminals and external components. The purpose is to provide circuits.
本発明のバイアス電圧設定回路は差入力電圧を接地電位
に対する絶対電位に変換する様に構成された第1及び第
2の差動増幅回路と、前記第1の差動増幅回路の出力が
反転入力に接続され前記第1の差動増幅回路の非反転入
力が出力に接続された第30差動増幅回路と、前記第2
の差動増幅回路の出力が非反転入力に接続され前記第2
の差動増幅回路の反転入力が出力に接続された第4の差
動増幅回路と、前記第1の差動増幅回路の反転入力及び
前記第2の差動増幅回路の非反転入力が共通接続された
基準電圧源と、前記第3の差動増幅回路の非反転入力及
び前記第4の差動増幅回路の反転入力に所定の電圧を印
加する手段とを備えたことを特徴とする。The bias voltage setting circuit of the present invention includes first and second differential amplifier circuits configured to convert a differential input voltage into an absolute potential with respect to a ground potential, and an output of the first differential amplifier circuit is an inverted input. a 30th differential amplifier circuit connected to the 30th differential amplifier circuit, the non-inverting input of the first differential amplifier circuit being connected to the output;
The output of the differential amplifier circuit is connected to the non-inverting input of the second differential amplifier circuit.
a fourth differential amplifier circuit whose output is connected to the inverting input of the differential amplifier circuit; the inverting input of the first differential amplifier circuit and the non-inverting input of the second differential amplifier circuit are commonly connected; and means for applying a predetermined voltage to the non-inverting input of the third differential amplifier circuit and the inverting input of the fourth differential amplifier circuit.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例を説明するための回路図であ
る。Al乃至A4は差動増幅回路、R1乃至R8は抵抗
、■。、は基準電圧源、IADJIは定電流源+ RA
DJIは可変抵抗、TIはRADJI接続用端子、VO
t+Y+およびV。、J72は出力電圧であり、RAD
JI以外は半導体集積回路内部に構成される。FIG. 1 is a circuit diagram for explaining one embodiment of the present invention. Al to A4 are differential amplifier circuits, R1 to R8 are resistors, (2). , is the reference voltage source, IADJI is the constant current source + RA
DJI is the variable resistor, TI is the RADJI connection terminal, VO
t+Y+ and V. , J72 is the output voltage, RAD
Everything other than JI is configured inside the semiconductor integrated circuit.
■Aoz1をT I 、 RAoxlを介して接地し、
TIをA2の非反転入力およびA4の反転入力に接続し
、AIの出力およびA3の出力をそれぞれA2の反転入
力およびA4の非反転入力へ接続する。またA1の非反
転入力はR1を介して接地すると同時にR2を介してA
2の出力へ接続し、A3の反転入力はR8を介してA3
の出力へ接続すると同時にR7を介してA4の出力へ接
続する。さらにAIの反転入力はR3を介してV工、に
接続するとともにR4を介してR1の出力に接続し、R
3の非反転入力はR5を介してVREFに接続するとと
もにR6を介して接地する。これによってAlA2及び
A3A4から成る2つの負帰還ループが構成される。■ Ground Aoz1 via T I and RAoxl,
TI is connected to the non-inverting input of A2 and the inverting input of A4, and the output of AI and the output of A3 are connected to the inverting input of A2 and the non-inverting input of A4, respectively. Also, the non-inverting input of A1 is grounded via R1, and at the same time, the non-inverting input of A1 is connected to ground via R2.
The inverting input of A3 is connected to the output of A3 through R8.
At the same time, it is connected to the output of A4 via R7. Furthermore, the inverting input of AI is connected to the V input via R3, and is also connected to the output of R1 via R4.
The non-inverting input of No. 3 is connected to VREF via R5 and to ground via R6. This creates two negative feedback loops consisting of AlA2 and A3A4.
次に本回路図の動作を説明する。T1には工ゎ、1およ
びRADIIにより電圧■□=IADJl・RADJI
が発生する。したがってA2の非反転入力(以下プラス
入力と略す)およびA4の反転入力(以下マイナス入力
と略す)の電位はVlとなりA2およびA4の開放電圧
利得が十分大きければA2のマイナス入力、A4のプラ
ス入力の電位負帰還動作により■1がAIおよびA3の
出力から与えられるこのときA1のマイナス入力の電位
■1−はV□。Next, the operation of this circuit diagram will be explained. T1 has engineering, voltage □ = IADJl・RADJI due to 1 and RADII
occurs. Therefore, the potential of the non-inverting input of A2 (hereinafter abbreviated as positive input) and the inverting input of A4 (hereinafter abbreviated as negative input) becomes Vl, and if the open circuit voltage gains of A2 and A4 are sufficiently large, the negative input of A2 and the positive input of A4 Due to the potential negative feedback operation, ■1 is given from the outputs of AI and A3. At this time, the potential ■1- of the negative input of A1 is V□.
■R8□R3およびR4で決定され次式で与えられる。■R8□Determined by R3 and R4 and given by the following formula.
したがってA2の出力電圧、すなわち■。tlTlは■
I+、R1,R2で決定され、また(1)式より・・・
・・・ (3)
となり、A4の出力電圧、すなわちV。。T2は■、−
1V□、R7、R8で決定され、また(2)式よりR1
Vouyz= (Vs−−Vya) ・+VTIIR。Therefore, the output voltage of A2, ie ■. tlTl is■
It is determined by I+, R1, R2, and from formula (1)...
... (3) Then, the output voltage of A4, that is, V. . T2 is ■, -
1V□, R7, and R8, and from equation (2), R1 Vouyz= (Vs--Vya) +VTIIR.
またA3のプラス入力の電位V3+l!V*gy、 R
5。Also, the potential of the positive input of A3 is V3+l! V*gy, R
5.
およびR6で決定され次式で与えられる。and R6, and is given by the following equation.
R。R.
ここでA2、A4同様AIおよびA3の開放電圧利得も
十分大きいとすれば負帰還動作によりA1のプラス入力
電位v1+およびA3のマイナス入力電位■、−はそれ
ぞれvl−および■、+に等しくなる。Here, if the open circuit voltage gains of AI and A3 are sufficiently large like A2 and A4, the positive input potential v1+ of A1 and the negative input potentials 2, - of A3 become equal to vl- and 2, +, respectively, due to the negative feedback operation.
・・・・・ (4)
となる。このときR1〜R8の抵抗値をすべて等しくす
れば(3)式および(4)式は次のようになる。...(4) It becomes. At this time, if the resistance values of R1 to R8 are all made equal, equations (3) and (4) become as follows.
V ot+t+ = V RIF + V TH・”
−(5)Vot+tz=Vnzy VTH°旧°(6
)(5)式および(6)式かられかるように出力電圧V
。tlTlおよびV。UT’lには基準電圧VRIIP
に対してRゎ、lで設定した電圧V□だけ対称なバイア
ス電圧が発生する。V ot+t+ = V RIF + V TH・”
-(5) Vot+tz=Vnzy VTH°old°(6
) As can be seen from equations (5) and (6), the output voltage V
. tlTl and V. Reference voltage VRIIP is applied to UT'l.
A bias voltage that is symmetrical by the voltage V□ set by Rゎ, l is generated.
以上説明したように本発明は半導体集積回路の外部の可
変抵抗RAD、、に発生する電圧が出力電圧端の基準電
圧に対するバイアス電圧と等しくなるのでs RADJ
Iの両端の電圧を調整することによりバイアス電圧を正
確に設定できるという効果がある。また電圧出力端の出
力インピーダンスは負帰還効果により低くなっているの
で、出力端に接続される回路のバイアス電流による影響
を受けにくいという効果がある。As explained above, in the present invention, the voltage generated in the external variable resistor RAD, , of the semiconductor integrated circuit becomes equal to the bias voltage with respect to the reference voltage at the output voltage terminal.
By adjusting the voltage across I, the bias voltage can be set accurately. Furthermore, since the output impedance of the voltage output terminal is lowered due to the negative feedback effect, it has the effect of being less affected by the bias current of the circuit connected to the output terminal.
また可変抵抗RA、、、およびRADJI接続端子が1
つのみで出力電圧を調整できるので半導体集積回路の端
子数および外付は部品を最小限にすることができること
により低コストを実現できるという効果がある。さらに
本発明において基準電圧に対するバイアス電圧の絶対値
はRADJ、・I、4DJlで表わされるのでRADJ
Iの値−を直線的に変化させることで出力電圧を調整で
きるため、バイアス電圧を広い範囲で設定することがよ
り容易になるという効果がある。Also, the variable resistors RA, , and RADJI connection terminals are 1
Since the output voltage can be adjusted with only one switch, the number of terminals and external parts of the semiconductor integrated circuit can be minimized, resulting in the effect of realizing low costs. Furthermore, in the present invention, the absolute value of the bias voltage with respect to the reference voltage is expressed as RADJ, ·I, 4DJl, so RADJ
Since the output voltage can be adjusted by linearly changing the value of I, the bias voltage can be more easily set within a wide range.
第1図は本発明のバイアス電圧設定回路を説明するため
の回路図、第2図、および第3図は従来のバイアス電圧
設定回路を説明するための回路図である。
AI乃至A5・・・・・・差動増幅回路、Ql乃至Q6
・・・・・・トランジスタ、R1へR11・・・・・・
抵抗% RADJl+RADJ2・・・・・・可変抵抗
、Vや、・・・・・・基準電圧源、I ADJ + *
工AD、1・・・・・電流源、Vcc・・・・・・電源
、T1乃至T5・・・・・・半導体集積回路の端子、v
out+ l VOI;72・・・・・・電圧出力端。FIG. 1 is a circuit diagram for explaining a bias voltage setting circuit of the present invention, and FIGS. 2 and 3 are circuit diagrams for explaining a conventional bias voltage setting circuit. AI to A5...Differential amplifier circuit, Ql to Q6
...Transistor, R1 to R11...
Resistance% RADJl+RADJ2...Variable resistance, V,...Reference voltage source, I ADJ + *
AD, 1...Current source, Vcc...Power supply, T1 to T5...Terminals of semiconductor integrated circuit, v
out+ l VOI; 72... Voltage output terminal.
Claims (1)
構成された第1及び第2の差動増幅回路と、前記第1の
差動増幅回路の出力が反転入力に接続され前記第1の差
動増幅回路の非反転入力が出力に接続された第3の差動
増幅回路と、前記第2の差動増幅回路の出力が非反転入
力に接続され前記第2の差動増幅回路の反転入力が出力
に接続された第4の差動増幅回路と、前記第1の差動増
幅回路の反転入力及び前記第2の差動増幅回路の非反転
入力が共通接続された基準電圧源と、前記第3の差動増
幅回路の非反転入力及び前記第4の差動増幅回路の反転
入力に所定の電圧を印加する手段とを備えたことを特徴
とするバイアス電圧設定回路。first and second differential amplifier circuits configured to convert a differential input voltage into an absolute potential with respect to a ground potential; and an output of the first differential amplifier circuit is connected to an inverting input; a third differential amplifier circuit in which the non-inverting input of the dynamic amplifier circuit is connected to the output; and an inverting input of the second differential amplifier circuit in which the output of the second differential amplifier circuit is connected to the non-inverting input. a fourth differential amplifier circuit connected to its output; a reference voltage source to which an inverting input of the first differential amplifier circuit and a non-inverting input of the second differential amplifier circuit are commonly connected; A bias voltage setting circuit comprising means for applying a predetermined voltage to a non-inverting input of the third differential amplifier circuit and an inverting input of the fourth differential amplifier circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1212282A JP2969665B2 (en) | 1989-08-18 | 1989-08-18 | Bias voltage setting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1212282A JP2969665B2 (en) | 1989-08-18 | 1989-08-18 | Bias voltage setting circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0376406A true JPH0376406A (en) | 1991-04-02 |
| JP2969665B2 JP2969665B2 (en) | 1999-11-02 |
Family
ID=16620020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1212282A Expired - Lifetime JP2969665B2 (en) | 1989-08-18 | 1989-08-18 | Bias voltage setting circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2969665B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112683115A (en) * | 2020-12-16 | 2021-04-20 | 陕西航天时代导航设备有限公司 | Torpedo steering engine driving system based on CPLD control |
-
1989
- 1989-08-18 JP JP1212282A patent/JP2969665B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112683115A (en) * | 2020-12-16 | 2021-04-20 | 陕西航天时代导航设备有限公司 | Torpedo steering engine driving system based on CPLD control |
| CN112683115B (en) * | 2020-12-16 | 2024-01-30 | 陕西航天时代导航设备有限公司 | Torpedo steering engine driving system based on CPLD control |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2969665B2 (en) | 1999-11-02 |
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