JPH0410685B2 - - Google Patents
Info
- Publication number
- JPH0410685B2 JPH0410685B2 JP14089283A JP14089283A JPH0410685B2 JP H0410685 B2 JPH0410685 B2 JP H0410685B2 JP 14089283 A JP14089283 A JP 14089283A JP 14089283 A JP14089283 A JP 14089283A JP H0410685 B2 JPH0410685 B2 JP H0410685B2
- Authority
- JP
- Japan
- Prior art keywords
- current collecting
- transparent conductive
- conductive film
- band
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 18
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 238000005476 soldering Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 238000005219 brazing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910026551 ZrC Inorganic materials 0.000 description 2
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Surface Treatment Of Glass (AREA)
Description
【発明の詳細な説明】
本発明は、ガラス等の基板表面上に形成した透
明導電膜に電極用の端子を形成する方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming electrode terminals on a transparent conductive film formed on the surface of a substrate such as glass.
従来、前記電極は、例えば基板表面上にインジ
ウム・テイン・オキサイド（ITO）等の透明導電
膜を形成し、該透明導電膜上の電極形成部分にア
ルミニウム（AI）、クロム（Cr）、銀（Ag）等の
薄膜を蒸着あるいはスパツタリング等の方法によ
つて形成して集電帯とし、該集電帯にリード線を
金具を介して圧着したり、あるいはリード線と該
集電帯とを導電性接着剤によつて接続する等の方
法によつて形成していた。 Conventionally, the electrodes are formed by forming a transparent conductive film such as indium tein oxide (ITO) on the surface of the substrate, and applying aluminum (AI), chromium (Cr), silver ( A thin film such as Ag) is formed by a method such as vapor deposition or sputtering to form a current collecting band, and a lead wire is crimped to the current collecting band via a metal fitting, or the lead wire and the current collecting band are electrically conductive. They were formed by methods such as connecting with adhesive.
しかし、これらの金具を介したり、あるいは導
電性接着剤を用いたりする接続法は機械的な強度
が小さかつた。又、導電性接着剤の電気抵抗や、
前記金具と集電帯との接触部での電気抵抗も大き
く、集電帯の膜厚が薄いため、該集電帯での電気
抵抗も大きかつた。 However, these connection methods using metal fittings or conductive adhesives have low mechanical strength. Also, the electrical resistance of conductive adhesive,
The electrical resistance at the contact portion between the metal fitting and the current collecting band was also large, and since the film thickness of the current collecting band was thin, the electrical resistance at the current collecting band was also large.
従来用いられていた他の方法としては、例えば
銀（Ag）を含むペーストを基板の電極形成部に
スクリーン印刷し、これを焼付けて集電帯とし、
該集電帯にリード線をハンダ付け等の方法によつ
て接続するという方法がある。なお、この方法に
よる集電帯の形成は、基板１０１にまず集電帯１
０３を形成し、その後透明導電膜１０２を形成す
る場合（第１図ａ）と、これとは逆に、基板１０
１にまず透明導電膜１０２を形成し、その後集電
帯１０３を形成する場合（第１図ｂ）がある。 Another conventionally used method is to screen print a paste containing silver (Ag) on the electrode forming part of the substrate and bake it to form a current collecting band.
There is a method of connecting a lead wire to the current collecting band by a method such as soldering. Note that in forming the current collecting band by this method, first the current collecting band 1 is placed on the substrate 101.
03 and then the transparent conductive film 102 (FIG. 1a), and vice versa, the substrate 10
1, a transparent conductive film 102 is first formed, and then a current collecting band 103 is formed (FIG. 1b).
しかし、この方法は、第１図ａに示す場合は、
集電体１０３と透明導電膜１０２との間に段差が
生じ、このため該段差部分で透明導電膜１０２に
亀裂が生じ易く、断線の原因となつた。逆に第１
図ｂに示す場合は、ペーストの焼付け時の熱によ
り透明導電膜１０２の抵抗値が増加するという不
都合が生じた（第２図に熱処理の温度とこれに対
するインジウム・テイン・オキサイド（ITO）の
薄膜の電気抵抗の変化との関係を示す）。 However, in the case shown in Figure 1a, this method
A step was formed between the current collector 103 and the transparent conductive film 102, and therefore, cracks were likely to occur in the transparent conductive film 102 at the step portion, causing wire breakage. On the contrary, the first
In the case shown in Figure b, there was an inconvenience that the resistance value of the transparent conductive film 102 increased due to the heat during baking the paste (Figure 2 shows the heat treatment temperature and its response to the indium tein oxide (ITO) thin film. ).
本発明は従来の電極形成方法の上記欠点に鑑
み、案出されたものであり、電極部での接続強度
を大きくし、かつ導電性を良好とした透明導電膜
の電極の形成方法を提供することを目的とする。 The present invention was devised in view of the above-mentioned drawbacks of conventional electrode forming methods, and provides a method for forming electrodes of transparent conductive films that increases the connection strength at the electrode portion and has good conductivity. The purpose is to
即ち、本発明は、ガラス等の基板表面上の電極
形成部に、導電性物質の薄膜を形成して集電ベー
ス膜とし、該集電ベース膜上に導電性の集電帯形
成物質を含むペーストを焼付けて集電帯とし、該
集電帯上にリード線をハンダ付け、ロウ付け等に
よつて接続し、その後前記基板表面上に前記集電
ベース膜と接するようにして透明導電膜を形成す
ることを特徴とする透明導電膜の電極形成方法で
ある。 That is, in the present invention, a thin film of a conductive substance is formed on an electrode forming portion on the surface of a substrate such as glass to form a current collection base film, and a conductive current collection band forming material is included on the current collection base film. The paste is baked to form a current collecting band, a lead wire is connected to the current collecting band by soldering, brazing, etc., and then a transparent conductive film is placed on the surface of the substrate in contact with the current collecting base film. This is a method of forming an electrode of a transparent conductive film.
基板はその表面に透明導電膜を形成する台であ
り、例えば自動車等の窓ガラスに用いるガラス
板、あるいは透明な樹脂板等を用いることができ
る。 The substrate is a base on which a transparent conductive film is formed, and can be, for example, a glass plate used for window glass of automobiles, a transparent resin plate, or the like.
電極形成部は、透明導電膜に電力を供給する端
子である電極を形成する基板上の部分である。故
に基板表面上に少なくとも２か所、一般には該基
板表面の端部に設ける。 The electrode forming portion is a portion on the substrate where an electrode, which is a terminal for supplying power to the transparent conductive film, is formed. Therefore, they are provided at at least two locations on the substrate surface, generally at the edges of the substrate surface.
集電ベース膜は集電帯と透明導電膜とを広い面
積で接続する仲介をするものであり、集電帯と透
明導電膜との接続の機械的強度及び導電性を改良
するものである。集電ベース膜の材料としてはイ
ンジウム・テイン・オキサイド（ITO）、二酸化
錫（SnO2）、インジウムオキサイド（In2O3）等
の透明物質、あるいは窒化チタン（TiN）、炭化
チタン（TiC）、タングステンカーバイド（WC）、
炭化ジルコニウム（ZrC）、窒化ジルコニウム
（ZrN）等の不透明物質等抵抗率の小さいものを
用いることができる。かかる集電ベース膜は蒸着
あるいはスパツタリング等の方法により基板の電
極形成部に形成する。 The current collection base film serves as an intermediary for connecting the current collection band and the transparent conductive film over a wide area, and improves the mechanical strength and conductivity of the connection between the current collection band and the transparent conductive film. Materials for the current collecting base film include transparent materials such as indium tein oxide (ITO), tin dioxide (SnO 2 ), indium oxide (In 2 O 3 ), titanium nitride (TiN), titanium carbide (TiC), etc. Tungsten carbide (WC),
Opaque materials with low resistivity such as zirconium carbide (ZrC) and zirconium nitride (ZrN) can be used. Such a current collecting base film is formed on the electrode forming portion of the substrate by a method such as vapor deposition or sputtering.
集電帯は透明導電膜とリード線とを接続するも
のである。集電帯としては、銀（Ag）、ニツケル
（Ni）、等を含むペーストを用い、該ペーストを
スクリーン印刷等により前記集電ベース膜上に印
刷し焼付けて形成する。該集電帯にはリード線を
直接、あるいは端子金具を介して間接に、はんだ
付け、ロウ付け等の方法によつて接続する。 The current collecting band connects the transparent conductive film and the lead wire. The current collecting band is formed by using a paste containing silver (Ag), nickel (Ni), etc., and printing and baking the paste on the current collecting base film by screen printing or the like. A lead wire is connected to the current collecting band directly or indirectly via a terminal fitting by a method such as soldering or brazing.
リード線を接続した後、透明導電膜を基板表面
上に形成する。形成する方法は蒸着あるいはスパ
ツタリング等を用いることができる。透明導電膜
の材料としてはインジウム・テイン・オキサイド
（ITO）、二酸化錫（SnO2）インジウムオキサイ
ド（In2O3）等を用いることができる。透明導電
膜の膜厚は、必要とされる発熱量、車載のバツテ
リー電源等により定まり、8000〓〜12000〓程度
である。透明導電膜は前記終電ベース膜と広い面
積で接触する。又、前記集電帯とも部分的に接触
することもできる。 After connecting the lead wires, a transparent conductive film is formed on the substrate surface. The formation method can be vapor deposition, sputtering, or the like. As a material for the transparent conductive film, indium tein oxide (ITO), tin dioxide (SnO 2 ), indium oxide (In 2 O 3 ), etc. can be used. The thickness of the transparent conductive film is determined by the amount of heat required, the battery power supply installed in the vehicle, etc., and is approximately 8,000 to 12,000. The transparent conductive film contacts the terminal base film over a wide area. Moreover, it can also be in partial contact with the current collecting band.
透明導電膜形成後、二酸化珪素（SiO2）、アル
ミナ（Al2O3）等の保護膜をスパツタリングある
いは蒸着によつて形成したり、あるいは、その
後、電極部をゴムあるいは樹脂等でコーテイング
すると良い。 After forming the transparent conductive film, it is recommended to form a protective film of silicon dioxide (SiO 2 ), alumina (Al 2 O 3 ), etc. by sputtering or vapor deposition, or to coat the electrode part with rubber, resin, etc. .
本発明の方法により電極を形成すると、先ず銀
（Ag）等を含むペーストを印刷、焼き付けて集電
帯を形成した後に透明導電膜を基板上に形成する
ために該透明導電膜が前記ペーストの焼付け時の
熱により、抵抗値を増大させることがない。した
がつて導電率が良好である。又、集電帯と透明導
電膜との間に集電ベース膜が介在しており、集電
帯と集電ベース膜、該集電ベース膜と透明導電膜
との接触面積が広い。したがつて接触部での導電
が良好であり機械的強度も強い。又、集電ベース
膜と透明導電膜とに段差があまりないため断線の
原因ともなりにくい。さらに、リード線と集電帯
とははんだ付けにより接合できるため強度は大き
い。なお、二酸化珪素（SiO2）の保護膜表面に
形成すると銀（Ag）ペーストを用いて形成した
集電帯の腐蝕も防止され、又、マイグレーシヨン
も発生しない。 When an electrode is formed by the method of the present invention, first a paste containing silver (Ag) or the like is printed and baked to form a current collecting band, and then a transparent conductive film is formed on a substrate so that the transparent conductive film is coated with the paste. The resistance value does not increase due to heat during baking. Therefore, the conductivity is good. Further, a current collecting base film is interposed between the current collecting band and the transparent conductive film, and the contact area between the current collecting band and the current collecting base film, and between the current collecting base film and the transparent conductive film is large. Therefore, the electrical conductivity at the contact portion is good and the mechanical strength is also strong. Furthermore, since there is not much difference in level between the current collecting base film and the transparent conductive film, disconnection is less likely to occur. Furthermore, since the lead wire and the current collecting band can be joined by soldering, the strength is high. Note that when it is formed on the surface of a silicon dioxide (SiO 2 ) protective film, corrosion of the current collecting band formed using silver (Ag) paste is also prevented, and migration does not occur.
以下、本発明を実施例に基づき説明する。 The present invention will be explained below based on examples.
第３図は本発明の方法により製造した透明導電
膜の電極部の要部拡大断面模式図である。 FIG. 3 is a schematic enlarged cross-sectional view of the main part of the electrode portion of the transparent conductive film produced by the method of the present invention.
先ず基板１として自動車用の窓ガラスに用いる
ガラス板を用意し、これを有機溶剤、純水などで
充分洗浄し、乾燥した後、電極形成部以外をマス
クし、スパツタリングによりITOを6000Åの厚さ
に形成し、集電ベース膜２とした。該マスクを除
去した後、低温焼成タイプのガラスフリツトの入
つた銀ペーストをスクリーン印刷により印刷し、
450℃にて焼付けて、集電帯３とした。該焼付け
により形成した銀の集電帯３の上に端子用金具４
をはんだ付けにより取付け、その後ガラス全体を
有機溶剤、純水で充分に洗浄し、不純物を取除き
清淨にした。 First, a glass plate used for automobile window glass is prepared as the substrate 1, and after thoroughly cleaning it with an organic solvent and pure water, drying it, masking the area other than the electrode formation area, and sputtering ITO to a thickness of 6000 Å. A current collecting base film 2 was formed. After removing the mask, a silver paste containing low-temperature firing type glass frit was printed by screen printing,
It was baked at 450°C to obtain current collector band 3. A terminal fitting 4 is placed on the silver current collecting band 3 formed by the baking.
was attached by soldering, and then the entire glass was thoroughly washed with organic solvent and pure water to remove impurities and make it clean.
次に必要箇所をマスクした後、スパツタリング
によりITOを10000Å形成し、透明導電膜７とし
た。該透明導電膜７のシート抵抗は5Ω／口であ
つた。マスク除去後スパツタリングによりガラス
全体に二酸化珪素（SiO2）の薄膜８を1000Å形
成し、その後電極部にシリコンゴム系のシーリン
グ剤９を充填した。 Next, after masking the necessary parts, ITO was formed to a thickness of 10,000 Å by sputtering to form a transparent conductive film 7. The sheet resistance of the transparent conductive film 7 was 5Ω/hole. After removing the mask, a thin film 8 of silicon dioxide (SiO 2 ) having a thickness of 1000 Å was formed on the entire glass by sputtering, and then a silicone rubber sealant 9 was filled in the electrode portion.
本発明の方法により製造した電極は、銀ペース
トによる集電帯３の形成後に透明導電膜７を形成
するために該透明導電膜７が前記集電帯３形成時
の焼付けの熱により抵抗値を増大させることはな
く導電率は良好であつた。又、集電帯３と透明導
電膜７とが集電ベース膜２により接続されている
ために接触面積が広く、導電率、機械的強度共に
良好であつた。又、リード線６は、はとだ付けに
より集電帯３に接続されているため、その機械的
強度は大きい。さらに、全体が二酸化珪素の保護
膜８で覆われているため銀集電帯３の腐蝕もなく
マイグレーシヨンも発生しなかつた。 In the electrode manufactured by the method of the present invention, since the transparent conductive film 7 is formed after the current collecting band 3 is formed using silver paste, the resistance value of the transparent conductive film 7 is reduced by the heat of baking when forming the current collecting band 3. The conductivity was good without any increase. Further, since the current collecting band 3 and the transparent conductive film 7 were connected by the current collecting base film 2, the contact area was wide, and both electrical conductivity and mechanical strength were good. Further, since the lead wire 6 is connected to the current collecting band 3 by bare wire attachment, its mechanical strength is high. Furthermore, since the entire structure was covered with the protective film 8 of silicon dioxide, the silver current collecting band 3 was not corroded and no migration occurred.
以上、要するに本発明の電極形成方法は、導電
性物質により集電ベース膜を形成し、該集電ベー
ス膜上に集電帯をペーストにより印刷し、焼き付
け、その後透明導電膜を形成するものである。実
施例に述べたところからも明らかな様に本発明の
方法によると、電極は機械的強度も大きく、又、
導電性も良好である。 In summary, the electrode forming method of the present invention involves forming a current collecting base film using a conductive material, printing a current collecting band using paste on the current collecting base film, and baking it, and then forming a transparent conductive film. be. As is clear from the examples described, according to the method of the present invention, the electrode has high mechanical strength, and
It also has good conductivity.
第１図ａ、及びｂは従来の電極形成方法によつ
て形成した透明導電膜の電極部の要部拡大断面模
式図である。第２図は熱処理温度に対するインジ
ウム・テイン・オキサイドの抵抗変化率を表わす
グラフである。又、第３図は本発明の実施例の方
法により製造した透明導電膜の電極部の要部拡大
断面模式図である。
１……基板、２……集電ベース膜、３……集電
帯、４……端子金具、７……透明導電膜。
FIGS. 1A and 1B are enlarged schematic cross-sectional views of main parts of electrode portions of a transparent conductive film formed by a conventional electrode forming method. FIG. 2 is a graph showing the rate of change in resistance of indium tein oxide versus heat treatment temperature. Moreover, FIG. 3 is a schematic enlarged cross-sectional view of the main part of the electrode portion of the transparent conductive film manufactured by the method of the example of the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Current collection base film, 3... Current collection band, 4... Terminal fitting, 7... Transparent conductive film.
Claims (1)
性物質の薄膜を形成して集電ベース膜とし、該集
電ベース膜上に導電性の集電帯形成物質を含むペ
ーストを焼付けて集電帯とし、該集電帯上にリー
ド線をハンダ付け、ロウ付け等によつて接続し、
その後前記基板表面上に前記集電ベース膜と接す
るようにして透明導電膜を形成することを特徴と
する透明導電膜の電極形成方法。1 A thin film of a conductive substance is formed on the electrode forming part on the surface of a substrate such as glass to form a current collection base film, and a paste containing a conductive current collection band forming substance is baked on the current collection base film to collect the current. A charging band is used, and a lead wire is connected to the current collecting band by soldering, brazing, etc.
A method for forming an electrode of a transparent conductive film, characterized in that a transparent conductive film is then formed on the surface of the substrate so as to be in contact with the current collection base film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14089283A JPS6032202A (en) | 1983-08-01 | 1983-08-01 | Method of forming electrode of transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14089283A JPS6032202A (en) | 1983-08-01 | 1983-08-01 | Method of forming electrode of transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6032202A JPS6032202A (en) | 1985-02-19 |
| JPH0410685B2 true JPH0410685B2 (en) | 1992-02-26 |
Family
ID=15279208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14089283A Granted JPS6032202A (en) | 1983-08-01 | 1983-08-01 | Method of forming electrode of transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6032202A (en) |
-
1983
- 1983-08-01 JP JP14089283A patent/JPS6032202A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6032202A (en) | 1985-02-19 |
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