JPS6032202A - Method of forming electrode of transparent conductive film - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method 1c for forming electrode terminals on a transparent conductive film formed on the surface of a substrate such as glass.

Conventionally, the electrode is formed by forming a transparent conductive film such as indium nine oxide (ITO) on the surface of the base, for example.
Aluminum (AI) is placed on the electrode forming part of the transparent conductive crotch.
, chromium (Or>), silver (AQ), etc. is formed as a current collecting band by a method such as vapor deposition or sputtering,
The current collecting band is formed by crimping a lead wire to the current collecting band through a metal fitting, or by connecting the lead wire and the current collecting band using a conductive adhesive.

However, the mechanical strength of these connection methods such as using metal fittings or using Get conductive adhesive was low. In addition, the electrical resistance of the conductive adhesive and the electrical resistance at the contact area between the metal fitting and the current collecting band were low, and because the film thickness of the current collecting band was thin, the electrical resistance at the current collecting band was also large. .

Other conventionally used methods include, for example, silver (A(
＋ ) is screen printed on the electrode forming part of the board, and the paste is printed with a baking number No. C East 7I band, and the lead wire is connected to the current collecting band by soldering or other method. There is a way to do it. J3, the formation of the current collecting band by this jj method is to form the f current collecting band 103 on the substrate 101,
When forming the ifi transparent S electric cross 102 (Fig. 1 (
Contrary to a)), when the transparent conductive film 102 is first formed on the substrate 101 and then the current collecting band 103 is formed (
Figure 1(b)).

However, when this method is not shown in FIG. On the other hand, in the case shown in FIG. 1(b), the resistance value of the transparent conductive film 102 increases due to the heat during baking of the paste, which is a problem shown in FIG. 2. (shows the relationship between the heat treatment temperature and the change in electrical resistance of an indium nine oxide (ITO) thin film).

The present invention was devised in view of the above-mentioned drawbacks of conventional electrode forming methods, and provides a method for forming electrodes of transparent conductive films that increases the connection strength at the electrode portion and has good conductivity. The purpose is to

That is, the present invention forms a thin film of a conductive substance on the electrode forming portion on the surface of a substrate such as glass to form a paste containing a conductive current collection band-forming substance on the current collection base film, which is called a current collection base film. A current collecting band is formed by baking the film, a lead wire is connected to the current collecting band by soldering, and then a transparent film is formed on the surface of the substrate so as to be in contact with the current collecting base film. This is a method for forming an electrode of a transparent conductive film, characterized by forming a conductive film.

The substrate has a surface on which transparent electric wires are formed, and can be made of, for example, a glass plate used for windowpanes of automobiles, or a transparent resin plate.

The electrode forming part is the part on the substrate where the electrode, which is the terminal that supplies electricity to the transparent conductive film, is formed.Therefore, there are at least two places on the surface of the substrate, generally (mostly at the ends of the surface of the substrate). [installation].

The current collecting base film serves as an intermediary to connect the current collecting band and the transparent conductive film in a wide area. It is something to improve. The current collecting base film (Io°31 and -C is indium tin oxide (rTo), tin dioxide (SnO
z), indium oxide (1++203)
Transparent materials such as titanium nitride (1iN>, titanium carbide (1°IC), tungsten carbide (WC),
Zirconium carbide (ZrC), zirconium nitride (Zr
An opaque material with low resistivity such as N) can be used. The curved current collecting base film is formed on the electrode forming portion of the substrate by a method such as vapor deposition or sputtering.

The current collecting band connects the transparent conductive film and the lead wire. The current collecting band is formed by using a paste containing silver (80), nickel < Ni, etc., and printing the paste on the crotch of the current collecting base by screen printing or the like and baking it.

A lead wire is connected to the current collecting band directly or indirectly through a terminal fitting by soldering, brazing, or the like.

After connecting the lead wires, a transparent conductive film is formed on the substrate surface. The forming method can be vapor deposition, sputtering, or the like. Materials for the transparent conductive film include indium nine oxide (ITO) and tin dioxide (S).
nOz), indium oxide (111203>, etc.) can be used.The thickness of the transparent conductive film is determined by the required heat generation m1 vehicle battery power source, etc.
00'0 to about 12,000 people. The transparent conductive film contacts the current collecting base film over a wide area. Moreover, it can also be in partial contact with the current collecting band.

After forming the transparent conductive film, a protective film such as silicon dioxide (SiO2) or alumina (At203) is formed by sputtering or vapor deposition, or the electrode part is coated with rubber or resin. It's good to have J.

When forming an electrode by the method of the present invention, first a paste containing ttn (80), etc. is printed and baked (=J (J) to form a transparent conductive film on the substrate after forming a current collecting band. The resistance of the transparent conductive film is not increased by 1 fX due to the heat generated during baking of the paste. Therefore, the conductivity is good. Also, the resistance between the current collecting band and the transparent conductive film is A current collecting base film is interposed between J3 and the contact area between the current collecting band and the current collecting base film, and the current collecting base film and the transparent conductive film is wide.

Therefore, the electrical conductivity at the contact portion is good and the global strength is also strong. In addition, there is not much difference in level between the Hayabusaichi base film and the transparent conductive film.1. : Less likely to cause wire breakage. moreover,
G1: The strength is high because the wire and current collecting band are joined by soldering. Note that when a protective film of silicon dioxide (Sing>) is formed on the surface, corrosion of the current collecting band formed using silver (Δg) paste is also prevented, and migration does not occur.

The present invention will be explained below based on examples.

FIG. 3 is an enlarged cross-sectional view of the main part of the electrode portion of the transparent conductive film produced by the method of the present invention.

First, a glass plate used for automobile window glass is prepared as the substrate 1, and this is thoroughly cleaned with a solvent, pure water, etc.
After drying, the area other than the electrode formation area was masked, and ITO was formed to a thickness of 6000 mm by sputtering to form a current collecting base film 2. After removing the mask, a silver paste containing a low-temperature firing type glass frit was screen printed and baked at 450℃.
And so.

Terminal fittings 4 are placed on top of the silver collector band 3 formed by the baking process (C), and then the entire glass is thoroughly washed with an organic solvent and pure water. It was cleaned by removing impurities.

Next, after masking the necessary areas, r
10,000 TOs were formed to form a transparent conductive film 7. The sheet resistance of the transparent conductive film 7 was 5()7. After mask removal, silicon dioxide (
A thin film 8 of Si02) was formed by 1000 people, and then a silicone rubber sealant 9 was filled in the electrode portion.

In the electrode manufactured by the method of the present invention, since the transparent conductive film 7 is formed after the current collecting band 3 is formed using silver paste, the transparent conductive film 7 resists resistance due to the heat of baking during the formation of the current collecting band 3. The conductivity was good without increasing the value.

Further, since the current collecting band 3 and the transparent conductive film 7 were connected by the current collecting base film 2, the contact area was wide, and both the electrical conductivity and the mechanical strength were good. In addition, the lead wire 6 is connected to the current collecting band 3 by a lυ wire, so its mechanical strength is large.Furthermore, since the entire lead wire 6 is covered with a protective film 8 of 14 element dioxide, There was no disease in silver concentration zone 3, and no migration occurred.

The above summarizes the electrode forming method of the present invention. First, a current collecting base film is formed from a conductive material, a current collecting band is printed on the current collecting base film using PACE i-, and is baked. Thereafter, a transparent conductive film is formed.As is clear from the examples described, according to the method of the present invention, the electrode has a large mechanical strength fg and good conductivity.

[Brief explanation of drawings]

FIGS. 1(a) and 1(b) are cross-sectional views of the main part of the electrode portion of a transparent conductive film formed by a conventional electrode forming method. Figure 2 shows heat treatment J! l! Wa '1. K
This is a graph showing the resistance change 1゛ of indium tin A fillide. Furthermore, FIG. 3 is an enlarged cross-section (Fig. ... Current collector band 4 ... Terminal metal fitting 7 ... Transparent conductive film Special Ro'1 Applicant 1 - Yota Jidosha Co., Ltd. agent Patent attorney Hirotoshi Okawa On patent attorney Shudo Fujitani Patent attorney Akio Maruyama Figure 1 Figure 2: Order of fifths (0C) Figure 3

Claims (1)

[Scope of Claims] A thin film of a conductive substance is formed on the electrode forming portion on the surface of a substrate such as glass to form a current collection base film, and a base film containing a conductive current collection band forming material on the crotch of the current collection base is provided. Burn it to make a current collecting band, and attach a lead wire on the current collecting band with solder and solder.
1. A method for forming an electrode of a transparent conductive film, which comprises connecting the transparent conductive film with the current collecting base film on the surface of the substrate.