JPH0410979A - Optical recording media and methods of manufacturing optical recording media - Google Patents

Optical recording media and methods of manufacturing optical recording media

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Publication number
JPH0410979A
JPH0410979A JP2113380A JP11338090A JPH0410979A JP H0410979 A JPH0410979 A JP H0410979A JP 2113380 A JP2113380 A JP 2113380A JP 11338090 A JP11338090 A JP 11338090A JP H0410979 A JPH0410979 A JP H0410979A
Authority
JP
Japan
Prior art keywords
layer
optical recording
gete
protective layer
recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2113380A
Other languages
Japanese (ja)
Other versions
JP2553736B2 (en
Inventor
Shigeaki Furukawa
惠昭 古川
Masami Uchida
内田 正美
Takeo Ota
太田 威夫
Kazumi Yoshioka
吉岡 一己
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2113380A priority Critical patent/JP2553736B2/en
Priority to US07/559,166 priority patent/US5194363A/en
Priority to US07/573,246 priority patent/US5230973A/en
Priority to KR1019910006821A priority patent/KR950006840B1/en
Publication of JPH0410979A publication Critical patent/JPH0410979A/en
Application granted granted Critical
Publication of JP2553736B2 publication Critical patent/JP2553736B2/en
Priority to US08/904,983 priority patent/USRE36383E/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Abstract

PURPOSE:To enhance the repeated characteristics of recording and erasure by forming a material prepared by adding nitrogen to a mixture of GeTe-Sb2 Te3-Sb on a substrate. CONSTITUTION:The first protective layer 2 composed of ZnS-SiO2 excellent in heat resistance is preliminarily formed to a substrate 1. A recording layer 3 is a membrane wherein nitrogen is mixed with GeTe, Sb2Te3 and Sb and the second protective layer 4 is composed of the same material as the first protective layer 2. A reflecting layer 5 is composed of an Al alloy and a protective plate 6 is bonded to the substrate 1 by an adhesive 7. The recording layer 3 has such a composition that the mol ratio (g) of GeTe/Sb2Te3 is 0.5 <= g <=2.3 and the mol ratio (b) of Sb/Sb2Te3 is 0 <= b <= 1.0. The recording layer is formed by a sputtering method using a gaseous mixture of argon and nitrogen gas. At this time, nitrogen partial pressure is set to 10<-5> - 1.0 X 10<-4>Torr. The second protective layer 4 is made thinner than the first protective layer 2 and the thickness thereof is set to 30nm or less.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はレーザービーム等により、情報を高密基 大容
量で記録再生及び消去できる光記録媒体に関するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optical recording medium on which information can be recorded, reproduced, and erased in a high density basis and in a large capacity using a laser beam or the like.

従来の技術 大容量で高密度なメモリとして光記録媒体が注目されて
おり、現在 情報の消去・再記録が可能である書換え型
と呼ばれるものの開発が進められていも この書換え型
の光記録媒体のひとつとして、Te−Ge−Sb台金薄
膜を記録層として用(\ レーザ光の照射により記録層
を加熱し 溶融し 急冷することにより非晶質化して情
報を記録し またこれを加熱し徐冷することにより結晶
化して情報を消去するものがある。第3図は従来の書換
え型光記録媒体を示した断面図であも 第3図において
、中心穴を有する円盤上の透明樹脂材料からなる基板1
1に誘電体からなる第1の保護層12、記録層13、誘
電体からなる第2の保護層14、金属薄膜からなる反射
層15を形成し その上に接着剤16を介して保護板1
7を設けたものであム ここで、記録層13にTe−G
e−Sb合金薄膜を用いれ(瓜 この結晶化速度が速い
た碌 単一のレーザの強度を変調して照射するだけで非
晶質化及び結晶化ができも 従って、この書換え型光記
録媒体(よ 一般にオーバライドと呼ばれる単一のレー
ザ光による情報の書換えが可能である。
Conventional technology Optical recording media are attracting attention as large-capacity, high-density memories, and although the development of so-called rewritable media that allows information to be erased and re-recorded is currently underway, One method is to use a Te-Ge-Sb base metal thin film as the recording layer (\ The recording layer is heated by irradiation with laser light, melted, and rapidly cooled to become amorphous to record information, and then heated and slowly cooled. There are some that crystallize and erase information by crystallizing the medium.Figure 3 is a cross-sectional view showing a conventional rewritable optical recording medium. Board 1
A first protective layer 12 made of a dielectric, a recording layer 13, a second protective layer 14 made of a dielectric, and a reflective layer 15 made of a metal thin film are formed on the protective plate 1 with an adhesive 16 thereon.
Here, the recording layer 13 is provided with Te-G
The e-Sb alloy thin film is used for this rewritable optical recording medium. It is possible to rewrite information using a single laser beam, which is generally called override.

発明が解決しようとする課題 記録薄膜を加熱昇温し 溶融急冷非晶質化および加熱昇
温徐冷結晶化の手段を用いる情報記録および消去可能な
光記録媒体において(戴 記録・消去の多数回の繰り返
しに対応して信号品質が変動する場合があ4 この変動
要因として(よ レーザ光による400℃以上の急速な
加熱・冷却の繰り返しによって記録層自信が熱的損傷を
受けたり、ディスク基板あるいは保護層の熱的な損傷が
考えられも さら!ミ 記録層について(よ その構成
組成によって(よ 層中の組成・成分の局所的な変(I
Lいわゆる偏析が発生する場合もある。以上のような変
化を生じた場合、記録・再生・消去の繰り返しにおいて
ノイズの増大等の劣化が生じる。これらの対策として(
よ 例えば記録層の材料として、GeTe、 Sb2T
ea 、 Sbの混合体を用いれi4  Sbの量を適
当にすることによって記録・消去の多数回の繰り返しに
よる信号品質の変動を阻止してい通、これI友Sbが結
晶化、非晶質化の過程において、GeTe成分とSb2
Tea成分の相分離に対する阻止効果を有しているから
である。このような構想によって、記録・消去を10’
回以上の繰り返しにおいても安定な信号を得てい九 し
かし さらに106回オーダーの繰り返しにおいて(友
 記録・消去の繰り返しに伴う加熱・冷却の繰り返しに
よって保護層の熱膨張・収縮に対応して保護層に挟まれ
た記録層材料が脈動し ディスク回転方向の案内溝に沿
って移動する場合があム このようなことが発生すると
記録層の厚さむらが発生し 信号品質が劣化するという
課題があっム 消去特性についてはTeを含む非晶質膜:よ その融点
は代表的なもので400℃〜900℃と広い温度範囲に
あり、これらの記録薄膜にレーザ光を照射し昇温徐冷す
ることにより結晶化が行えも この温度は一般的に融点
より低い結晶化温度領域にあムまたこの結晶化した膜に
高いパワーレベルのレーザ光をあて、その融点以上に加
熱するとその部分は溶融し急冷し 再び非晶質化してマ
ークが形成できも 記録マークとして非晶質化を選ぶと
、このマークは記録薄膜が溶融し急冷されて形成される
ものであるか収 冷却速度が速いほど非晶質状態の均一
なものが得られ信号振幅が向上する。冷却速度が遅い場
合はマークの中心と周辺で非晶質化の程度に差が発生す
も 次に結晶化消去に際してζ友 レーザ光の照射によ
り既に記録が行われている非晶質マーク部を、結晶化温
度以上に昇温し徐冷して、結晶化させてこのマークを消
去すもこの時、マークが均一に結晶化するときは消去特
性が向上すも しかし 記録マークの状態が不均一な場
合(未 記録マーク部の反射率や吸収率にむらが発生し
やすく、消去した時に 結晶化の状態が不均一となり、
記録マークの消し残りが発生し消去特性が劣化するとい
う課題があっ九 本発明の目的ζ友 サイクル特性が安
定であり、記録消去特性の良好な光ディスクを提供する
ことである。
Problems to be Solved by the Invention In optical recording media that are capable of recording and erasing information using methods such as heating a recording thin film to raise its temperature, melting and rapidly cooling it into an amorphous state, and heating and slowly cooling it to crystallize it, it is possible to record and erase information many times. Signal quality may fluctuate in response to repeated heating and cooling (4) The reasons for this fluctuation include thermal damage to the recording layer itself due to repeated rapid heating and cooling of 400°C or higher using laser light, and damage to the disk substrate or Although thermal damage to the protective layer may be considered, local changes in the composition and components of the recording layer (depending on its composition) may occur.
L So-called segregation may occur. When the above changes occur, deterioration such as an increase in noise occurs during repeated recording, reproduction, and erasing. As these countermeasures (
For example, as a material for the recording layer, GeTe, Sb2T
By using a mixture of Sb and Sb and adjusting the amount of Sb appropriately, fluctuations in signal quality due to repeated recording and erasing are prevented. In the process, GeTe component and Sb2
This is because it has the effect of inhibiting phase separation of the Tea component. With this kind of concept, recording and erasure will be reduced to 10'.
A stable signal was obtained even after repeating more than 10 times. However, after repeated repetitions of 106 times (Friend) The sandwiched recording layer material may pulsate and move along the guide groove in the direction of disk rotation. When this happens, the thickness of the recording layer becomes uneven and signal quality deteriorates. Regarding erasing characteristics, the melting point of an amorphous film containing Te is typically in a wide temperature range of 400°C to 900°C. Even if crystallization can occur, this temperature is generally in the crystallization temperature range lower than the melting point.Also, if this crystallized film is heated with a high power level laser beam and heated above the melting point, that part will melt and cool rapidly. Even if a mark can be formed by becoming amorphous again, if amorphization is selected as the recording mark, the mark is formed by melting the recording thin film and rapidly cooling it.The faster the cooling rate, the more amorphous the state. A uniform signal is obtained and the signal amplitude is improved.If the cooling rate is slow, there will be a difference in the degree of amorphization between the center and the periphery of the mark. The amorphous mark part where recording has already been made is heated above the crystallization temperature and slowly cooled to crystallize and erase the mark.At this time, if the mark is uniformly crystallized, it is erased. However, if the recorded marks are uneven (unrecorded marks tend to have uneven reflectance or absorption, and when erased, the crystallization state will be uneven).
There is a problem that recording marks remain unerased and deterioration of erasing characteristics occurs.An object of the present invention is to provide an optical disc with stable cycle characteristics and good recording and erasing characteristics.

課題を解決するための手段 本発明(よ レーザ光等の照射により、状態の変化がな
さf5  GeTeとSb2Te3とSbの混合体に窒
素を含ませた材料からなる記録層を基板上に形成したも
のである。
Means for Solving the Problems The present invention (1) A recording layer made of a material containing nitrogen in a mixture of f5 GeTe, Sb2Te3, and Sb is formed on a substrate so that the state does not change when irradiated with laser light or the like. It is.

作用 本発明は上記した構成 すなわちGeTe−3b2Te
3−Sbの混合体!二 窒素を含ませた材料を基板上に
形成することで、記録・再生・消去の繰り返しに伴う加
熱・冷却の繰り返しにより記録層材料が脈動し案内溝に
沿って移動する現象を抑制することができ、これによっ
て記録・消去の繰り返し特性を向上することができるも
のであa また基板上に第1の保護層と、GeTeとSb2Te3
とSbの混合体に窒素を含ませた材料からなる記録層と
、第2の誘電体層と、反射層とを備え 第2の誘電体層
を第1の保護層より薄<L30nm以下にしているので
、金属からなる反射層と記録層を近づけることになり、
記録層が急冷され 記録マークが均一な非晶質状態とな
a その結果 記録・消去が向上すも 実施例 以下、本発明の一実施例の光記録媒体を図面に基づいて
説明すも 第1図は本発明の一実施例を示す断面図であ
も 第1図において、中心孔を有する円盤上の透明な基
板1上にあらかじめ耐熱性の優れたZnS−8iO2か
らなる第1の保護層2を形成すも 組成比は5ide含
有量が約20モル%であり、膜厚は約150nmであも
 3は記録層でGeTe、 Sb2Te3. Sbに窒
素を混合した薄膜であり、膜厚は約20nmであム 4
は第2の保護層で第1の保護層2と同じ材料からなって
おり、膜厚は約20nmであ45はA1合金からなる反
射層で膜厚は約1゜Onmであム 6は保護板で接着剤
7によって基板1に貼り合わせている。記録層3を構成
する材料のうちのGeTe、 Sb2Te3. Sbの
組成として(よ 第2図のGeTe、 Sb2Tc3.
 Sbからなる三角ダイアダラムにおいて、 b = 
Sb/ Sb2Te3= 0  及びb= 1.0の両
ラインの内側に選J%  bが0よりも少ない組成領域
すなわち余剰のTeを含む組成領域で(友 本実施例の
組成である余剰のSbを含む組成のものに比べ局所的な
偏析に対する阻止効果が低かっ九 またb= 1.0 
 を越える組成領域で(よ 記録・消去の繰り返しにお
いて非晶質化劣化が生じやす(−ゆえに 0≦b≦1.
0 の組成領域が繰り返し特性が良好であり好まししも g = GeTe/ Sb2Tesについて1ヨgが0
.5以下になると、結晶化転移温度が低下し 耐熱安定
性が小さくなる。 g=2.3を越える組成領域では熱
的安定性が良好であるが感度が低下すa ゆえ(、−0
,5≦g≦2.3が良好であり好ましく〜第1及び第2
の保護服 記録層 反射層の形成方法として(よ 一般
的には真空蒸着あるいはスパッター法が使用できる。本
実施例では記録層の形成方法としてアルゴンと窒素の混
合ガスによるスパッタ法を用いていも この啄 窒素の
分圧が特性あるいは膜質を決定する上で重要である力丈
 記録薄膜のスパッタ時の窒素分圧は104〜1.OX
 10”’Torrの範囲が適当であム この理由は窒
素分圧を10− ’ Torrよりt小さくすると、 
 GeTe、 Sb2Te3. Sbに含まれる窒素が
少なくなり、記録層3の材料が脈動して、案内溝に添っ
て移動する現象を阻止する効果が小さくなる。逆に窒素
分圧を10− ’ Torrよりもを大きくすると、記
録層の屈折率啄 光学的な特性の変(L  あるいは結
晶化速嵐 非晶質化劣化暮 記録消去にかかわる基本的
な特性が変化してしまう。ゆえ番−窒素分圧は1o−6
〜1.OX 10−’Torrの範囲が適当であム 第1、 第2の保護層2,4のZnS−8iO2混合膜
は5in2の比率を20モル%にしているがこれに限定
するものではなLy  Lかじながら5ineの比率を
5モル%以下にすると、 ZnSに5ideを混合した
時に得られる効果 すなわち結晶粒径を小さくするとい
う効果が小さくなり、 40モル%を越えるとと、5i
(h膜の性質が大きくなるものであるが収5ideの比
率は5〜40モル%の範囲にするのが適当である。
Function The present invention has the above-described structure, that is, GeTe-3b2Te.
3-Sb mixture! (2) By forming a material containing nitrogen on the substrate, it is possible to suppress the phenomenon in which the recording layer material pulsates and moves along the guide groove due to repeated heating and cooling associated with repeated recording, reproduction, and erasing. This makes it possible to improve the repeatability of recording and erasing.a Also, a first protective layer of GeTe and Sb2Te3 is formed on the substrate.
a recording layer made of a material containing nitrogen in a mixture of Sb and Sb; a second dielectric layer; and a reflective layer; Therefore, the reflective layer made of metal and the recording layer are brought closer together.
The recording layer is rapidly cooled, and the recording marks become uniformly amorphous.As a result, recording and erasing are improved. The figure is a sectional view showing one embodiment of the present invention. In Figure 1, a first protective layer 2 made of ZnS-8iO2 with excellent heat resistance is preliminarily deposited on a transparent substrate 1 on a disk having a center hole. The composition ratio of the 5ide content is about 20 mol %, and the film thickness is about 150 nm. 3 is the recording layer made of GeTe, Sb2Te3. It is a thin film made of Sb mixed with nitrogen, and the film thickness is approximately 20 nm.
is a second protective layer made of the same material as the first protective layer 2 and has a thickness of approximately 20 nm; 45 is a reflective layer made of A1 alloy and has a thickness of approximately 1° Onm; 6 is a protective layer; A plate is attached to the substrate 1 with an adhesive 7. Of the materials constituting the recording layer 3, GeTe, Sb2Te3. As for the composition of Sb (as shown in Fig. 2, GeTe, Sb2Tc3.
In a triangular diadem made of Sb, b =
Sb/Sb2Te3 = 0 and b = 1.0, in the composition region where b is less than 0, that is, in the composition region containing surplus Te (Tomo). The effect of inhibiting local segregation is lower than that of compositions containing b = 1.0.
In the composition range exceeding (0), amorphous deterioration is likely to occur during repeated recording and erasing (-therefore, 0≦b≦1.
It is preferable that a composition region of 0 has good repeatability and 1 yog is 0 for g = GeTe/Sb2Tes.
.. When it is less than 5, the crystallization transition temperature decreases and the heat resistance stability decreases. In the composition range exceeding g=2.3, the thermal stability is good, but the sensitivity decreases. Therefore, (, -0
, 5≦g≦2.3 is good and preferable ~ first and second
Protective clothing Recording layer Generally speaking, vacuum evaporation or sputtering can be used to form the reflective layer.In this example, sputtering using a mixed gas of argon and nitrogen can be used to form the recording layer. Partial pressure of nitrogen is important in determining properties and film quality Nitrogen partial pressure during sputtering of recording thin film is 104 to 1.OX
A range of 10'''Torr is appropriate.The reason for this is that when the nitrogen partial pressure is made smaller than 10''Torr,
GeTe, Sb2Te3. As the amount of nitrogen contained in Sb decreases, the effect of preventing the material of the recording layer 3 from pulsating and moving along the guide groove becomes smaller. On the other hand, when the nitrogen partial pressure is increased to more than 10-' Torr, the refractive index of the recording layer changes, the optical properties change (or the crystallization speed storm, the amorphous deterioration, and the basic characteristics related to record erasure). Therefore, the partial pressure of nitrogen is 1o-6
~1. The ZnS-8iO2 mixed film of the first and second protective layers 2 and 4 has a 5in2 ratio of 20 mol%, but the ratio is not limited to this.Ly L However, if the ratio of 5ine is reduced to 5 mol% or less, the effect obtained when 5ide is mixed with ZnS, that is, the effect of reducing the crystal grain size, becomes smaller, and if it exceeds 40 mol%, the 5i
(Although the properties of the film are increased, it is appropriate that the ratio of 5ide be in the range of 5 to 40 mol%.

さら番へ 第2の保護層4の膜厚を約30nmと薄くし
ているバ これよって熱拡散層となる反射層5と記録層
3が近くなり、記録・消去時の記録層3の熱が急速に反
射層5に伝達されることになって、記録層3を急冷し 
記録マークが均一な非晶質状態となム その結果 記録
・消去が向上すa本実施例のディスク構成玄 外径13
0ffla1800 rpm回転 線速度8 m/se
cでfl=3.43MHzの信号 f2=1.25MH
zの信号のオーバーライド特性を測定し九 この結果 
記録信号のC/N比としてi;t、、55dB以上が得
られ オーバライド消去率30dB以上が得られた オ
ーバライドのサイクル特性について(よ 特にピットエ
ラーレイトの特性を測定した結i10’、サイクル以上
劣化が見られなかっ九 発明の効果 以上のように本発明によればGeTe、 Sb2Te3
. Sbに窒素を混合した記録層を基板上に形成するこ
とによって、記録・消去の繰り返しに伴(\ 記録層材
料が案内溝に沿って移動する現象を抑制し これによっ
て記録・消去の繰り返し特性を向上することができも 
また 記録層と反射層の間の保護層を薄くした急冷構成
にすることによって、均一な非晶質化が可能となり、記
録・消去特性が良好で、かつ106回以上の書換えが可
能な光記録媒体を提供することができも
Next, the thickness of the second protective layer 4 is reduced to approximately 30 nm.This brings the reflective layer 5, which serves as a heat diffusion layer, closer to the recording layer 3, and the heat of the recording layer 3 during recording and erasing is reduced. It is rapidly transmitted to the reflective layer 5 and rapidly cools the recording layer 3.
Recording marks become uniform and amorphous.As a result, recording and erasing improve
0ffla1800 rpm rotation Linear speed 8 m/se
Signal of fl=3.43MHz at c f2=1.25MH
Measure the override characteristics of the z signal and get the result
A recording signal C/N ratio of i;t, 55 dB or more was obtained, and an override erasure rate of 30 dB or more was obtained.As for the override cycle characteristics (particularly, we measured the pit error rate characteristics, and the results showed that it deteriorated over a cycle of i10'). According to the present invention, GeTe, Sb2Te3
.. By forming a recording layer made of a mixture of Sb and nitrogen on the substrate, we can suppress the phenomenon in which the recording layer material moves along the guide groove during repeated recording and erasing, thereby improving the characteristics of repeated recording and erasing. can also be improved
In addition, by using a rapid cooling structure with a thin protective layer between the recording layer and the reflective layer, uniform amorphization is possible, and optical recording has good recording and erasing characteristics and can be rewritten over 106 times. Also can provide medium

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例における光記録媒体の断面医 
第2図は本発明の実施例における光記録媒体の記録層の
うちGeTe、 Sb2Te3. Sbの組成を示した
三角ダイアグラム 第3図は従来の光記録媒体の断面図
であム ト・・基板 2・・・第1の保護服 3・・・記録層 
4・・・第2の保護# 5・・・反射層 6・・・保護
板、 7・・・接着能 代理人の氏名 弁理士 粟野重孝 はか1芯筒 1 図 第3図 1フイ尿ff↑舌え i*
FIG. 1 shows a cross-sectional diagram of an optical recording medium in an embodiment of the present invention.
FIG. 2 shows GeTe, Sb2Te3. Triangular diagram showing the composition of Sb Figure 3 is a cross-sectional view of a conventional optical recording medium: Substrate 2... First protective clothing 3... Recording layer
4...Second protection #5...Reflective layer 6...Protection plate, 7...Name of adhesive agent Patent attorney Shigetaka Awano 1-core cylinder 1 Figure 3 Figure 1 ff ↑Tongue i*

Claims (9)

【特許請求の範囲】[Claims] (1)レーザ光等の照射により、状態の変化がなされ、
GeTeとSb_2Te_3とSbの混合体に窒素を含
ませた材料からなる記録層を基板上に形成した光記録媒
体。
(1) A change in state is made by irradiation with laser light, etc.
An optical recording medium in which a recording layer made of a mixture of GeTe, Sb_2Te_3, and Sb containing nitrogen is formed on a substrate.
(2)GeTeとSb_2Te_3とSbの混合体に、
窒素を含ませてなる記録層を、アルゴンと窒素の混合ガ
スを用いたスパッタ法で形成することを特徴とする光記
録媒体の製造方法。
(2) In the mixture of GeTe, Sb_2Te_3 and Sb,
A method for manufacturing an optical recording medium, comprising forming a recording layer containing nitrogen by a sputtering method using a mixed gas of argon and nitrogen.
(3)記録層を形成する時の窒素分圧を10^−^5〜
10^−^4Torrの範囲にすることを特徴とする請
求項2記載の光記録媒体の製造方法。
(3) Set the nitrogen partial pressure when forming the recording layer to 10^-^5~
3. The method for manufacturing an optical recording medium according to claim 2, wherein the pressure is set in a range of 10^-^4 Torr.
(4)記録層の組成がGeTe/Sb_2Te_3のモ
ル比をgとして、0.5≦g≦2.3である請求項1記
載の光記録媒体。
(4) The optical recording medium according to claim 1, wherein the composition of the recording layer is 0.5≦g≦2.3, where g is the molar ratio of GeTe/Sb_2Te_3.
(5)記録層の組成がSb/Sb_2Te_3のモル比
をbとして、0≦b≦1.0である請求項1記載の光記
録媒体。
(5) The optical recording medium according to claim 1, wherein the composition of the recording layer is 0≦b≦1.0, where b is the molar ratio of Sb/Sb_2Te_3.
(6)記録層の組成がGeTe/Sb_2Te_3のモ
ル比をgとして、0.5≦g≦2.3の範囲でかつ、S
b/Sb_2Te_3のモル比をbとして、0.1≦b
≦1.0である請求項1記載の光記録媒体。
(6) The composition of the recording layer is in the range of 0.5≦g≦2.3, where g is the molar ratio of GeTe/Sb_2Te_3, and S
When the molar ratio of b/Sb_2Te_3 is b, 0.1≦b
The optical recording medium according to claim 1, wherein ≦1.0.
(7)基板上に第1の保護層と、GeTeとSb_2T
e_3とSbの混合体に窒素を含ませた材料からなる記
録層と、第2の保護層と、反射層とを順次形成した光記
録媒体。
(7) First protective layer on the substrate, GeTe and Sb_2T
An optical recording medium in which a recording layer made of a mixture of e_3 and Sb containing nitrogen, a second protective layer, and a reflective layer are sequentially formed.
(8)基板上に第1の誘電体層と、GeTeとSb_2
Te_3とSbの混合体に窒素を含ませた材料からなる
記録層と、第2の保護層と、反射層とを備え、第2の保
護層を第1の保護層より薄くし、第2の保護層の膜厚を
30nm以下にした請求項7記載の光記録媒体。
(8) First dielectric layer on the substrate, GeTe and Sb_2
A recording layer made of a material containing nitrogen in a mixture of Te_3 and Sb, a second protective layer, and a reflective layer, the second protective layer is thinner than the first protective layer, and the second protective layer is made thinner than the first protective layer. 8. The optical recording medium according to claim 7, wherein the protective layer has a thickness of 30 nm or less.
(9)第1及び、第2の保護層を、ZnSとSiO_2
の混合体とし、SiO_2比が5〜40モル%とした請
求項7記載の光記録媒体。
(9) The first and second protective layers are made of ZnS and SiO_2
8. The optical recording medium according to claim 7, wherein the optical recording medium has a SiO_2 ratio of 5 to 40 mol%.
JP2113380A 1990-04-27 1990-04-27 Optical recording medium and method of manufacturing optical recording medium Expired - Lifetime JP2553736B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2113380A JP2553736B2 (en) 1990-04-27 1990-04-27 Optical recording medium and method of manufacturing optical recording medium
US07/559,166 US5194363A (en) 1990-04-27 1990-07-30 Optical recording medium and production process for the medium
US07/573,246 US5230973A (en) 1990-04-27 1990-08-24 Method of recording and erasing information in an erasible optical recording medium
KR1019910006821A KR950006840B1 (en) 1990-04-27 1991-04-27 Optical recording medium & production process for the medium
US08/904,983 USRE36383E (en) 1990-04-27 1997-08-01 Optical recording medium and production process for the medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2113380A JP2553736B2 (en) 1990-04-27 1990-04-27 Optical recording medium and method of manufacturing optical recording medium

Publications (2)

Publication Number Publication Date
JPH0410979A true JPH0410979A (en) 1992-01-16
JP2553736B2 JP2553736B2 (en) 1996-11-13

Family

ID=14610830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2113380A Expired - Lifetime JP2553736B2 (en) 1990-04-27 1990-04-27 Optical recording medium and method of manufacturing optical recording medium

Country Status (1)

Country Link
JP (1) JP2553736B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587216A (en) * 1992-10-16 1996-12-24 Matsushita Electric Industrial Co., Ltd. Optical recording medium
US5948496A (en) * 1996-09-06 1999-09-07 Ricoh Company, Ltd. Optical recording medium
US6607869B1 (en) 1997-08-22 2003-08-19 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and method of manufacturing the same
US6858277B1 (en) 1999-03-15 2005-02-22 Matsushita Electric Industrial Co., Ltd. Information recording medium and method for manufacturing the same
US7288224B2 (en) 1995-03-31 2007-10-30 Ricoh Company, Ltd. Method of producing a sputtering target
US7758382B2 (en) 2007-08-31 2010-07-20 Fujitsu Limited Connector with isolating end face and side connections and information processing apparatus including connector

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587216A (en) * 1992-10-16 1996-12-24 Matsushita Electric Industrial Co., Ltd. Optical recording medium
US7288224B2 (en) 1995-03-31 2007-10-30 Ricoh Company, Ltd. Method of producing a sputtering target
US5948496A (en) * 1996-09-06 1999-09-07 Ricoh Company, Ltd. Optical recording medium
US6607869B1 (en) 1997-08-22 2003-08-19 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and method of manufacturing the same
US6858277B1 (en) 1999-03-15 2005-02-22 Matsushita Electric Industrial Co., Ltd. Information recording medium and method for manufacturing the same
US7758382B2 (en) 2007-08-31 2010-07-20 Fujitsu Limited Connector with isolating end face and side connections and information processing apparatus including connector

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