JPH04120000A - Heat-treating jig for semiconductor - Google Patents
Heat-treating jig for semiconductorInfo
- Publication number
- JPH04120000A JPH04120000A JP23734690A JP23734690A JPH04120000A JP H04120000 A JPH04120000 A JP H04120000A JP 23734690 A JP23734690 A JP 23734690A JP 23734690 A JP23734690 A JP 23734690A JP H04120000 A JPH04120000 A JP H04120000A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- jig
- oxynitride
- sic
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims description 14
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 7
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000011247 coating layer Substances 0.000 abstract 1
- 238000011109 contamination Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は主として８１ウエーハの熱処理チューブ及び熱
処理ボートの材料構成に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention primarily relates to the material construction of an 81 wafer heat treatment tube and heat treatment boat.
従来ｓｉウェーハの熱処理チー−プ及び熱処理ボートに
は石英チューブ及び石英ボートあるいはｓｌｃチューブ
及びＳｉＯボートあるいはＳ１チー−プ及びＳ１ボート
等が用いられるのが通例でありた。Conventionally, a quartz tube and a quartz boat, an SLC tube and an SiO boat, or an S1 cheap and an S1 boat have been used as a heat treatment boat for Si wafers.
しかし、上記従来技術によると、石英チューブ及び石英
ボートは耐熱性が低（，１２００℃以上での熱処理が不
可能であると言う課題があり、ＳｉＯチューブ及びＳｉ
ＯボートあるいはＳ１チユーブ及びＳ１ボートは１２０
０℃以上１４００℃程度の熱処理は充分可能ではあるが
、Ｆｅを主体とする重金属汚染があると言う課題があっ
た。However, according to the above-mentioned conventional technology, there is a problem that quartz tubes and quartz boats have low heat resistance (i.e., heat treatment at temperatures above 1200°C is impossible), and SiO tubes and quartz boats
O boat or S1 tube and S1 boat is 120
Although heat treatment at a temperature of 0° C. to 1400° C. is fully possible, there is a problem in that heavy metal contamination, mainly Fe, occurs.
本発明は、かかる従来技術の課題を解決し、１２００℃
以上の耐熱性が有り、且つ重金属等の不鈍物汚染の無い
半導体熱処理治具を提供する事を目的とする。The present invention solves the problems of the prior art and
It is an object of the present invention to provide a semiconductor heat treatment jig which has the above heat resistance and is free from contamination by inert substances such as heavy metals.
上記課題を解決する為に本発明は半導体熱処理治具に関
し、
（１） Ｓ１Ｃ治具の表面にオキシナイトライド層を
形成し、該オキシナイトライド層の表面にｓＩａ層を形
成する手段を取る事、及び、（２）Ｓｉ、Ｎ、治具の表
面にオキシナイトライド層を形成し、該オキシナイトラ
イド層の表面にＳｉＣ層を形成する手段を取る事、及び
、（３） オキシナイトライド治具の表面にＳｉＣ層を
形成する手段を取る事、
等の手段を取る。In order to solve the above problems, the present invention relates to a semiconductor heat treatment jig. , and (2) forming an oxynitride layer on the surface of the Si, N, jig, and forming an SiC layer on the surface of the oxynitride layer, and (3) oxynitride curing. Take measures such as forming a SiC layer on the surface of the tool.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
いま、粉末焼成されたＳｉＣチューブの内面に８００℃
Ｓ ｉ Ｈ４＋ Ｏｘ ＋ Ｎ Ｈｓ → Ｓ ｉ
ＮＸ Ｏｙ等から成る反応によりＣＶＤ法にてＩＤｌｔ
ｍ程度のオキシナイトライド層を形成後、引続き、１０
０Ｃ１℃
Ｓ Ｉ Ｈ４＋ＣｓＨ，−＋ ＳＩ Ｃ等から成る反
応によりＣＶＤ法にて１０μｍ程度のＳｉＣ層を形成す
る。本性により粉末焼成されたＳｉＣチューブからのＦ
θを主体とする重金属汚染がオキシナイトライド層によ
り防止されると共に、オキシナイトライド層表面に形成
されたＳｉＣ層により、オキシナイトライド層の酸化に
よるＳ ｉ ｏ、層化を防止する事ができる。尚本性は
ＳｉＣチューブのみならずＳｉＯボート表面にオキシナ
イトライド層とＳｉ０層を形成する場合等、半導体熱処
理治具にも適用することができる。Now, 800℃ Si H4+ Ox + N Hs → Si
IDlt by CVD method by reaction consisting of NX Oy etc.
After forming an oxynitride layer of about 10 m,
A SiC layer of about 10 μm is formed by a CVD method using a reaction consisting of 0C1° C. SI H4+CsH, −+ SIC, and the like. F from SiC tube powder fired by nature
The oxynitride layer prevents heavy metal contamination mainly from θ, and the SiC layer formed on the surface of the oxynitride layer can prevent S io and layering due to oxidation of the oxynitride layer. . The present invention can be applied not only to SiC tubes but also to semiconductor heat treatment jigs, such as when forming an oxynitride layer and a Si0 layer on the surface of a SiO boat.
次に、粉末焼結されたＳｉ３Ｎ４ チューブの全表面に
ＣＶＤ法によりオキシナイトライド層を形成後、ＣＶＤ
法によりＳｉ０層を形成する事により、Ｓｉ３Ｎ４チュ
ーブに直接Ｓ、ｔＯ層を形成する場合に発生するＳｉＣ
層の熱歪によるクラックを防止すると共に、表面ＳｉＣ
層はＳ ｉ、Ｎ４チ−ブの酸化を防止する作用がある。Next, after forming an oxynitride layer on the entire surface of the powder-sintered Si3N4 tube by CVD method,
By forming a Si0 layer using the method, SiC generated when forming an S, tO layer directly on the Si3N4 tube
In addition to preventing cracks due to thermal strain in the layer, the surface SiC
The layer has the effect of preventing oxidation of the Si, N4 tube.
前記実施例のＳｉＯ治具表面に形成するオキシナイトラ
イド層はＳｉ、Ｎ４層ではやはりＳｉＯ治具や表面Ｓｉ
Ｃ層との熱歪によるクラック発生を防止する作用がある
。尚本性はオキシナイトライドチューブのみならずオキ
シナイトライド・ボート等の半導体熱処理治具に適用す
ることができる。The oxynitride layer formed on the surface of the SiO jig in the above embodiment is Si, and the N4 layer is also formed on the SiO jig and the surface Si.
It has the effect of preventing cracks from occurring due to thermal strain with the C layer. The present invention can be applied not only to oxynitride tubes but also to semiconductor heat treatment jigs such as oxynitride boats.
更に、粉末焼成された又はＣＶＤ法により形成されたオ
キシナイトライド治具の表面に、ＣＶＤ法によりＳｉ０
層を形成する事により、熱歪によるクラックもな（、且
つオキシナイトライド治具の酸化による石英化もな（、
重金属不純物汚染もない半導体熱処理治具ができる。Furthermore, Si0 is applied to the surface of the oxynitride jig which has been powder-fired or formed by the CVD method.
By forming a layer, there are no cracks due to thermal strain (and no quartzization due to oxidation of the oxynitride jig).
A semiconductor heat treatment jig without heavy metal impurity contamination can be created.
本発明により重金属等の不純物汚染がな（、且つ耐熱性
が１２００℃以上２０００℃程度迄有る熱処理治具を提
供することができる効果がある。The present invention has the advantage of being able to provide a heat treatment jig that is free from contamination with impurities such as heavy metals and has heat resistance from 1200°C to about 2000°C.
以上 出願人 セイコーエプソン株式会社that's all Applicant: Seiko Epson Corporation
Claims (3)
成され、該オキシナイトライド層の表面にはＳｉＣ層が
形成されて成る事を特徴とする半導体熱処理治具。(1) A semiconductor heat treatment jig characterized in that an oxynitride layer is formed on the surface of the SiC jig, and a SiC layer is formed on the surface of the oxynitride layer.
ド層が形成され、該オキシナイトライド層の表面にはＳ
ｉＣ層が形成されて成る事を特徴とする半導体熱処理治
具。(2) An oxynitride layer is formed on the surface of the Si_3N_4 jig, and the surface of the oxynitride layer is S
A semiconductor heat treatment jig characterized by forming an iC layer.
成されて成る事を特徴とする半導体熱処理治具。(3) A semiconductor heat treatment jig characterized in that a SiC layer is formed on the surface of the oxynitride jig.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23734690A JPH04120000A (en) | 1990-09-07 | 1990-09-07 | Heat-treating jig for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23734690A JPH04120000A (en) | 1990-09-07 | 1990-09-07 | Heat-treating jig for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04120000A true JPH04120000A (en) | 1992-04-21 |
Family
ID=17014030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23734690A Pending JPH04120000A (en) | 1990-09-07 | 1990-09-07 | Heat-treating jig for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04120000A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0807961A1 (en) * | 1996-05-17 | 1997-11-19 | Asahi Glass Company Ltd. | Vertical wafer boat |
-
1990
- 1990-09-07 JP JP23734690A patent/JPH04120000A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0807961A1 (en) * | 1996-05-17 | 1997-11-19 | Asahi Glass Company Ltd. | Vertical wafer boat |
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