JPH04154017A - Manufacture of copper/chrome electrode material - Google Patents
Manufacture of copper/chrome electrode materialInfo
- Publication number
- JPH04154017A JPH04154017A JP27539590A JP27539590A JPH04154017A JP H04154017 A JPH04154017 A JP H04154017A JP 27539590 A JP27539590 A JP 27539590A JP 27539590 A JP27539590 A JP 27539590A JP H04154017 A JPH04154017 A JP H04154017A
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- JP
- Japan
- Prior art keywords
- powder
- copper
- infiltration
- electrode material
- skeleton
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010949 copper Substances 0.000 title claims abstract description 91
- 239000007772 electrode material Substances 0.000 title claims abstract description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims description 4
- 230000008595 infiltration Effects 0.000 claims abstract description 33
- 238000001764 infiltration Methods 0.000 claims abstract description 32
- 239000011812 mixed powder Substances 0.000 claims abstract description 19
- 238000002844 melting Methods 0.000 claims abstract description 12
- 230000008018 melting Effects 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims description 28
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000843 powder Substances 0.000 abstract description 46
- 229910017813 Cu—Cr Inorganic materials 0.000 abstract description 16
- 238000005245 sintering Methods 0.000 abstract description 10
- 238000009826 distribution Methods 0.000 abstract description 7
- 239000011800 void material Substances 0.000 abstract description 3
- 239000011651 chromium Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Abstract
Description
【発明の詳細な説明】 人 産業上の利用分野 本発明は、銅−クロム電極材料の製造方法に関する。[Detailed description of the invention] Human industrial application field The present invention relates to a method of manufacturing a copper-chromium electrode material.
発明の概要
本発明は、l!(以下、Cuと表す)とクロム(以下、
Crと表す)からなる電極材料を製造するにあたり、先
ず50μmi下の粒径を60%以上持つCu粉末とCr
粉末との混合粉を容器内に自然に充填し、不活性雰囲気
下においてCuの融点以上の温度で加熱して、Cu −
Crインゴットを得た後、Cu −Crインゴットの空
隙にCuを溶浸させるか、混合粉上にCuを置き焼結と
併せてCuの溶浸を行ってCu −Cr電極材料を得る
ものである。SUMMARY OF THE INVENTION The present invention provides l! (hereinafter referred to as Cu) and chromium (hereinafter referred to as Cu)
In manufacturing an electrode material consisting of Cr (expressed as
The mixed powder is naturally filled into a container and heated at a temperature higher than the melting point of Cu in an inert atmosphere to form Cu-
After obtaining a Cr ingot, a Cu-Cr electrode material is obtained by infiltrating Cu into the voids of the Cu-Cr ingot, or by placing Cu on a mixed powder and performing Cu infiltration along with sintering. .
従来の技術
真空インタラプタの電極材料として要求される重要な性
能の一つとして、電流遮断性能の高いことがあげられる
。2. Description of the Related Art One of the important properties required of electrode materials for vacuum interrupters is high current interrupting performance.
近年、この電流遮断性能が良好な電極材料として、高融
点材としてCr1導電材としてCuを用し)たC u
−Cr電極材料が開発されている。In recent years, as an electrode material with good current interrupting performance, Cr is used as a high melting point material and Cu is used as a conductive material.
-Cr electrode materials have been developed.
従来、このCu −Cr電極@料は、溶浸法あるいば焼
結法によ吻製作されている。Conventionally, this Cu--Cr electrode material has been manufactured by an infiltration method or a sintering method.
溶浸法は、Cr粉末を真空あるいは水素中等の不活性雰
囲気中で1000℃す上の温度で加熱、脱ガス処理して
Crのスケルトン([[体)を得、このスケルトン上に
Cuを設置し、Cuの融点以上の温度で加熱してCuを
Crスケルトンの空隙に溶かし込んでCu−Crの合金
を得ろ方法である。In the infiltration method, Cr powder is heated and degassed at a temperature above 1000°C in a vacuum or an inert atmosphere such as hydrogen to obtain a Cr skeleton, and Cu is placed on this skeleton. In this method, Cu is heated at a temperature higher than the melting point of Cu to dissolve Cu into the voids of the Cr skeleton to obtain a Cu-Cr alloy.
また、焼結法は、Cr粉末とCu粉末を所望の割合で混
合してなる混合粉を981〜6867MPm (100
0〜7000 kgf/ej)の圧力で加圧成形し、そ
の後、真空あるいは水素中等の不活性雰囲気中でCuの
融点す下の温度で加熱して、粉末同士を融着させろこと
によりCu Cr脛合を得ろ方法である、
発明が解決しようとする!!理
しかしながら、上記溶浸法己こ;よ、
■ Cu粉末の粒径、かさ密度、粉度分布等、Cu粉末
の粉体物性値によりスケルトンの空隙率が決定してしま
うため、任意のCu−Cr比率の電極材料が得に(い、
■ CrのスケルトンにCrを溶浸する際、Cr表面が
酸化していると、溶浸が不十分になり、電極表面や内部
に巣が発生することがある、
などの問題点がある。In addition, in the sintering method, a mixed powder obtained by mixing Cr powder and Cu powder in a desired ratio is mixed at 981 to 6867 MPm (100
0 to 7000 kgf/ej), and then heated in a vacuum or in an inert atmosphere such as hydrogen at a temperature below the melting point of Cu to fuse the powders together. This is the method that the invention seeks to solve! ! However, the porosity of the skeleton is determined by the physical properties of the Cu powder, such as the particle size, bulk density, and particle size distribution of the Cu powder. Electrode materials with a Cr ratio are particularly advantageous (i) When infiltrating Cr into a Cr skeleton, if the Cr surface is oxidized, the infiltration will be insufficient and cavities may occur on the electrode surface or inside. There are problems such as.
また、焼結法には、
■ 製造に際し、高度な技術を要する、■ 製造条件に
よっては電極内部に巣が残ることがある、
■ プレス成形機等の高価な設備が必要である、などの
問題点がある。In addition, the sintering method has problems such as: ■ Requires advanced technology during manufacturing; ■ Depending on the manufacturing conditions, cavities may remain inside the electrode; ■ Requires expensive equipment such as a press molding machine. There is a point.
MMを解決するための手段
上記事情にかんがみ、Cu粉末とCr粉末との混合粉−
tIJ!、これを容器に自重充填し、七〇を焼結させて
スケルトン上とした浸;こCuを溶浸すること、あるい
は焼結を併せてCuを溶浸することを試みた。このとき
、Cu粉末の粒度の影響をみるため、Cu粉末の粒径を
変えて電極材料を作製し、作製過程、作製された電極材
料を観察した。Means for solving MM In view of the above circumstances, a mixed powder of Cu powder and Cr powder -
tIJ! We tried to infiltrate this with Cu, or to infiltrate it with Cu, by filling it into a container under its own weight and sintering it to form a skeleton. At this time, in order to examine the influence of the particle size of the Cu powder, electrode materials were produced by changing the particle size of the Cu powder, and the production process and the produced electrode materials were observed.
出発原糾として、粒径100〜60μmに80%が分布
するCr粉末に下記のCu粉末を混合し、Cuの粒径の
依存性を調査した。As a starting material, the following Cu powder was mixed with a Cr powder whose particle size was 80% distributed between 100 and 60 μm, and the dependence of the Cu particle size was investigated.
Cr25重量%、Cu75重量%となるように上記それ
ぞれの粉体を秤量して十分:こ混合し、この混合粉を内
径80mのアルミナ容器に250g充填し、10−’T
orrの真空中で1130℃に1時間加熱した。The above powders were weighed and mixed sufficiently so that Cr was 25% by weight and Cu was 75% by weight, and 250g of this mixed powder was filled into an alumina container with an inner diameter of 80m.
Heated to 1130° C. for 1 hour in a vacuum of orr.
加熱中、Cuが溶けろため混合粉体(よ大きく収縮する
。得られたスケルトンの外径は下表の通りとなった。During heating, the mixed powder (shrinks significantly) due to the melting of Cu. The outer diameter of the obtained skeleton was as shown in the table below.
次tこ、上記スケルトン上にその空隙を埋めるのに十分
なCu塊(前記嵐3と同じ粒径かっ分布率の焼結体で、
直径35m、厚さ8調、重量70g)を設置し、10−
’Torrの真空中で1130℃に1時間加熱しCuを
スケルトン中に溶浸させた。Next, place enough Cu lumps on the skeleton to fill the voids (a sintered body with the same particle size and distribution ratio as Arashi 3,
35 m in diameter, 8 thicknesses, and 70 g in weight), and 10-
The skeleton was heated to 1130° C. for 1 hour in a vacuum of Torr to infiltrate Cu into the skeleton.
&1.Na2のCu粉末を使用したインゴット(電極材
料)では、Cuがスケルトン周囲にはみ出した。インゴ
ットを切断し、内部を調べてみると、インゴット内に巣
が存在していた、&3のC11粉末を用いたインゴット
では、余剰のCuが周囲にはみ出すことなく、内部に巣
の存在も見らnなかった。&1. In the ingot (electrode material) using Na2 Cu powder, Cu protruded around the skeleton. When we cut the ingot and examined the inside, we found that there were nests inside the ingot.In the ingot using C11 powder of &3, there was no excess Cu protruding into the surrounding area, and no nests were found inside. There wasn't.
上記結果は、k ’3. jMl 2のCu粉末のよう
に、Cu粉末の粒径が大きb)とスケルトンを得るとき
の収縮が小さいため溶浸工程でCuが溶は込んだ際、C
uがスケルトンの空隙を貫通し、周囲にしみ出すためで
ある。The above result is k'3. Like the Cu powder of jMl 2, the particle size of the Cu powder is large b) and the shrinkage when obtaining the skeleton is small, so when Cu is infiltrated in the infiltration process, the C
This is because u penetrates the void in the skeleton and seeps out into the surrounding area.
N113のCu粉末について、異なる粒度分布について
も同様の試作、調査を行ったところ、粒度分布が60%
より少なくなると、粒径の大きいCu粉末が増えること
から、インゴットに巣が発生し、溶浸用銅の:よみ出し
が生じてしまう。When we conducted similar trial production and investigation for N113 Cu powder with different particle size distributions, we found that the particle size distribution was 60%.
If the amount decreases, Cu powder with a large particle size increases, causing cavities in the ingot and causing the copper for infiltration to ooze out.
なお、上記のようにスケルトンを作製した後にCuを溶
浸させる場合だけでな(、混合粉の焼結と同時に溶浸を
行った場合にもほぼ同様の結果が得られた。Note that almost the same results were obtained not only when Cu was infiltrated after producing the skeleton as described above (also when infiltration was performed simultaneously with sintering of the mixed powder).
上記より、第一番目の発明に係ろCu−Cr電極材料の
製造方法は、50μm息下の粒径を60%以上持つCu
粉末とCr粉末との混合粉を容器内に充填した後、不活
性雰囲気下においてCuの融点以上の温度で加熱してC
u−Crインゴットを得、このCu−Crインゴット上
に溶浸用銅を設置し加熱して溶浸用銅をCu −Crイ
ンゴットの空隙に溶浸させることを特徴とするものであ
る。From the above, it can be seen that the method for producing a Cu-Cr electrode material according to the first invention uses Cu having a particle size of 60% or more under 50 μm.
After filling a container with a mixed powder of Cu powder and Cr powder, it is heated at a temperature higher than the melting point of Cu in an inert atmosphere to convert it to Cr powder.
The method is characterized in that a u-Cr ingot is obtained, copper for infiltration is placed on top of the Cu-Cr ingot, and heated to infiltrate the copper for infiltration into the voids of the Cu-Cr ingot.
また、第二番目の発明に係るC u −Cr電極材料の
製造方法は、50μm以下の粒径を60%以上持っCu
粉末とCr粉末との混合粉を容器内に充填し、その上に
lW浸用銅を設置し、不活性雰囲気下においてCuの融
点以上の温度で加熱することを特徴とするものである。Further, the method for producing a Cu-Cr electrode material according to the second invention is a method for producing a Cu-Cr electrode material having a particle size of 60% or less of 50 μm or less.
This method is characterized by filling a container with a mixed powder of powder and Cr powder, placing IW immersion copper on top of the mixed powder, and heating it at a temperature equal to or higher than the melting point of Cu in an inert atmosphere.
作 用
上記方法においては、Cu粉末とCr粉末との混合粉が
密に溶着するため、溶浸用銅が周囲にしみ出すことなく
、巣のない緊密な組成の電極材料が得られる。Function: In the above method, since the mixed powder of Cu powder and Cr powder is closely welded, the copper for infiltration does not seep into the surroundings, and an electrode material with a dense composition without voids can be obtained.
26例
真空インタラプタは、その概略構造の一例:e!!す第
5図に示すようなものであり、相互に−is状をなす一
対のリード庫11,12の対向増面には、それぞれ電極
13.14が一体的に設けである。これら電[13,1
4を囲む筒状のシールド15の外周中央部は、このシー
ルド15を囲む一対の絶縁筒16゜17の間に挟まれた
状態で保持されている。26 Example vacuum interrupter is an example of its schematic structure: e! ! As shown in FIG. 5, electrodes 13 and 14 are integrally provided on the opposing surfaces of a pair of lead storages 11 and 12 that are in a -is shape with each other. These electric currents [13,1
A central portion of the outer periphery of a cylindrical shield 15 surrounding the shield 15 is held between a pair of insulating cylinders 16 and 17 surrounding the shield 15.
一方の前記リード棒11ζよ、一方の絶縁筒16の一端
に接合された金属端板18を機密に貫通した状態で、こ
の金属端板18に一体的に固定されている。図示しない
型動装置に連結されろ他方のリードl112は、他方の
絶縁筒17の多端に機密に接合された他方の金属端板1
9にベフーズ20を介して連結され、駆動装置の作動に
伴って電極13.14の対向方向に注m勤可能に可動側
の電極14が固定側の電極13に対して開閉力作するよ
うになっている。One of the lead rods 11ζ is integrally fixed to the metal end plate 18 joined to one end of the insulating tube 16 while being passed through the metal end plate 18 in a secure manner. The other lead l112, which is connected to a mold movement device (not shown), is connected to the other metal end plate 1 which is securely joined to the other end of the other insulating cylinder 17.
9 via the Befouz 20, and as the drive device operates, the movable electrode 14 can open and close the fixed electrode 13 in a direction opposite to the electrodes 13 and 14. ing.
上記電l!l113,14を作製する電極材料は次のよ
うに製作されろ。The above electricity! The electrode material for forming 113 and 14 is manufactured as follows.
先ず、粒径100〜60μmに80%が分布するCr粉
末と粒径50μm以下に80%が分布するCu粉末とを
、Cr重量%、Cu75重量%となるようにそれぞれ秤
量に混合し、その混合粉1を第1図(alに示すように
、内径80膳のアルミナ容112内に自重で水平に25
0g充填する。First, Cr powder with a particle size of 80% to 60 μm and Cu powder with a particle size of 80% below 50 μm are mixed in weighed amounts so that the weight of Cr and the weight of Cu are 75%, respectively. As shown in FIG.
Fill with 0g.
次いで、上記容器2を真空炉内に入れ、10−’Tor
rの真空中で脱ガスしつつあるいは不活性ガス中で11
30℃に1時間加熱保持する。加熱中、Cuが溶けるた
め、第1図(blに示すようにスケルトン1aは大きく
収縮したものとなる。Next, the container 2 is placed in a vacuum furnace and heated to 10-'Tor.
11 while degassing in a vacuum of r or in an inert gas.
Heat and hold at 30°C for 1 hour. During heating, Cu melts, so the skeleton 1a becomes greatly shrunken as shown in FIG. 1 (bl).
このスケルトン1m上に第1図(0)に示すように溶浸
用#i43を置く。溶浸用l1lI3としては、スケル
トン1aの径の80%未満の直径の丸棒(あるいは円板
)とし、その量は、スケルトン1aの空隙を埋めるのに
十分な量とする。Place #i43 for infiltration 1 m above this skeleton as shown in FIG. 1(0). The infiltration l1lI3 is a round rod (or disk) with a diameter less than 80% of the diameter of the skeleton 1a, and the amount thereof is sufficient to fill the voids in the skeleton 1a.
ここでは、粒径50μm以下の為のが80%分布するC
u粉末の焼結体であって、直径が35閣、厚さが81で
重量が70gのものを採用した。Here, C with a particle size of 50 μm or less is distributed at 80%.
A sintered body of U powder with a diameter of 35 mm, a thickness of 81 mm, and a weight of 70 g was used.
スケルトンla上に溶浸用113を置いた状態で、10
−’Torrの真空中においである一;よ不活性ガス中
において1130℃に1時間加熱保持し、Cuをスケル
トン1aの空隙に溶浸させた。Cuが周囲に:よみ出す
ことがなく、内部に巣も存在しない緊密な電極材料が得
られた。例えば、密度比98%のものが得られる4なお
、溶浸温度は、下限をCuの融点以上とし、上限をCu
の融点+60℃程度とする。With the infiltration 113 placed on the skeleton la, 10
The sample was placed in a vacuum of -' Torr and heated and maintained at 1130° C. for 1 hour in an inert gas to infiltrate Cu into the voids of the skeleton 1a. Cu in the surrounding area: A tight electrode material was obtained that did not seep out and had no cavities inside. For example, a density ratio of 98% can be obtained4.The lower limit of the infiltration temperature is set to be equal to or higher than the melting point of Cu, and the upper limit is set to the melting point of Cu.
The melting point of +60°C.
溶浸温度が高すぎると、Cuのしみ出しにより巣が生じ
てしまうことがあるからである。This is because if the infiltration temperature is too high, cavities may occur due to seepage of Cu.
前述のように、Cu粉末においては、粒径50μmi下
のものが60%以上含まれるものとする。前述の41.
Na2の如く粒径がそれ以上大きかったり、粒度分布が
60%未満であると、第2図に示すように、スケルトン
1&におけろ空隙4が大きくなって、Cuを啓浸させた
ときに空隙4を通じてCuがしみ出してしまうという不
具合が生じる。図中、3aがしみ出しなCuであるっ
また、スケルトンla上に載せろ溶浸用銅3の直径:よ
前述のようにスケルトン1aの直径の80%未満とする
580%以上のもの(例えば直径42寵のもの)で(よ
、第3図に示すように溶浸用W43がスケルトン1aの
外m縁からばみ出し、スケルトン作製後部にしみ込まな
くなってしまう。As mentioned above, the Cu powder contains 60% or more of particles with a particle size of 50 μm or less. 41 above.
If the particle size is larger than that or if the particle size distribution is less than 60%, as in the case of Na2, as shown in Figure 2, the voids 4 in the skeleton 1& will become larger, and when Cu is immersed, the voids will disappear. A problem arises in that Cu seeps out through 4. In the figure, the diameter of the infiltrated copper 3 should be placed on the skeleton 1a.The diameter of the infiltrated copper 3 should be less than 80% of the diameter of the skeleton 1a (for example, the diameter should be 580% or more). As shown in FIG. 3, the W43 for infiltration protrudes from the outer edge of the skeleton 1a and does not penetrate into the rear part of the skeleton.
なお、電極材料におけるCuの成分割合は、80〜40
重量%とする。Cuが80重量%息1では、スケルトン
1aを製造する際、Cuがしみ出し、溶浸後内部に巣が
残ることがあり、また、Cuが<OIi量%量子以下t
電極としての性能が維持できないからである。In addition, the component ratio of Cu in the electrode material is 80 to 40
Weight%. If Cu is 80% by weight, Cu may ooze out during the production of skeleton 1a, leaving cavities inside after infiltration, and if Cu is < OIi amount % or less than
This is because the performance as an electrode cannot be maintained.
Crの成分割合は、60〜20重量%とする。The component ratio of Cr is 60 to 20% by weight.
上述のようにして得られた電極材料に機械加工を施し、
電極13.14とする。The electrode material obtained as described above is machined,
The electrodes are referred to as 13 and 14.
上記実施例方法1よ、焼結体であるスケルトン作製後の
!S浸を行うものであるが、焼結と溶浸を同時に行うよ
うにしてもよい。その実施例方法を114図に示す
出発原糾としては、前述の実施例と同様に、粒径100
〜60μmのものが80%存在するCr粉末と、粒径5
0μm以下のものが80%存在するCu粉末とを採用し
、Cr25重量%、Cu75重量%となるようにそれぞ
れの粉体を重量し十分に混合する。Method 1 of the above example, after the skeleton, which is a sintered body, is produced! Although S immersion is performed, sintering and infiltration may be performed simultaneously. The example method is shown in FIG.
Cr powder with 80% of ~60 μm and particle size 5
A Cu powder in which 80% of particles having a diameter of 0 μm or less is present is used, and the respective powders are weighed and thoroughly mixed so that the Cr content is 25% by weight and the Cu powder is 75% by weight.
この混合粉1を第4図(alに示すように、内径8G−
のアルミナ容iIz内に自重で水平に250g充填する
。As shown in Fig. 4 (al), this mixed powder 1 has an inner diameter of 8G-
250g of alumina is filled horizontally into the alumina volume iIz using its own weight.
肩合粉1の上に溶浸用@3を置く。溶浸用@3としては
、粒径50μm以下のものが80%分布するCu粉末の
焼結体であって、直径が35層、厚さが8職で、重量が
70gのものを採用した。Place infiltration powder @3 on top of shoulder powder 1. For infiltration @3, a sintered body of Cu powder in which 80% of the particles had a particle size of 50 μm or less was used, which had a diameter of 35 layers, a thickness of 8 layers, and a weight of 70 g.
濁合粉1上に溶浸用wI3を載せた状態でこれらを真空
炉内にセットし、10“Torrの真空中あるいは不活
性ガス中で1130℃に1時間加熱保持した。混合粉1
におけるCuとCrが融着すると共に、′a浸用銅3が
溶けて、Cu−Crの空隙に浸入する。焼結溶浸後の状
態を篤4図1b)に示す、3bは得られたインプラ)1
bの残余のCuである。The infiltration wI3 was placed on the cloudy powder 1 and these were set in a vacuum furnace, and heated and held at 1130°C for 1 hour in a vacuum of 10 Torr or in an inert gas.Mixed powder 1
At the same time, Cu and Cr are fused together, and the immersed copper 3'a is melted and penetrates into the Cu-Cr void. The state after sintering and infiltration is shown in Atsushi 4 Figure 1b), 3b is the obtained implant) 1
This is the residual Cu of b.
以上のように、本発明方法は、スケルトンを得た後にC
uを溶浸させる方法、焼結と溶浸を一工程で行う方法で
あるが、電極径が70寵以上のような大きな電極を製造
する場合は、スケルトンを得た後にCuを溶浸させたほ
うが好適である。粉体上に溶浸用銅を設置した場合には
、巣ができることがあるからである。As described above, in the method of the present invention, after obtaining the skeleton, C
The method of infiltrating Cu is a method of performing sintering and infiltration in one step, but when manufacturing a large electrode with an electrode diameter of 70 mm or more, it is necessary to infiltrate Cu after obtaining the skeleton. is more suitable. This is because when infiltration copper is placed on powder, cavities may form.
発明の効果
本発明に係ろCu −Cr電極材料の製造方法によれば
、Cu粉末における粒径及び粒度分布を規定し、1然充
填した後、Cuを溶浸あるいは焼結と溶浸を行うように
したので、均−で巣のない@富なCu −Cr電極材料
が得られろ。Effects of the Invention According to the method for manufacturing a Cu-Cr electrode material according to the present invention, the particle size and particle size distribution of the Cu powder are defined, and after being filled all at once, Cu is infiltrated or sintered and infiltrated. As a result, a uniform and void-free @rich Cu-Cr electrode material can be obtained.
また、本発明方法によれば、得られる電極材料のCu−
Crの組成策域が大きく、任意のCu / Cr比率の
電極材料を得ることが可能となる。Further, according to the method of the present invention, the electrode material obtained is Cu-
There is a wide range of Cr composition options, making it possible to obtain an electrode material with any Cu/Cr ratio.
さらに、従来の焼結方法に比べ、高圧工程が不要である
ので、製造工程がWM易であり、製造設備の簡素化、低
コスト化が図れる。Furthermore, compared to conventional sintering methods, no high-pressure process is required, so the manufacturing process is easy to manage, and manufacturing equipment can be simplified and costs can be reduced.
第1図は本発明の一実施例に係るC u −Cr電極材
料製造工程の説明図、第2図は溶浸用銅がしみ出す様子
の説明図、第3図は溶浸用銅が溢流する様子の説明図、
第4図(よ他の実施例方法の説明図、第5図は真空イン
タラプタの一例の断面図である。
図面中、
1ミよ混合粉、
1aはスケルトン、
1bはインゴット、
2はアルミナ容器、
3は溶浸用銅、
13.141よ電極である。
特許出願
株式会社
明
代
理Fig. 1 is an explanatory diagram of the Cu-Cr electrode material manufacturing process according to an embodiment of the present invention, Fig. 2 is an explanatory diagram of how copper for infiltration seeps out, and Fig. 3 is an illustration of how copper for infiltration overflows. An explanatory diagram of the flow,
Figure 4 is an explanatory diagram of another example method, and Figure 5 is a sectional view of an example of a vacuum interrupter. In the drawings, 1 is a mixed powder, 1a is a skeleton, 1b is an ingot, 2 is an alumina container, 3 is copper for infiltration, 13.141 is electrode. Patent application agent Akira Co., Ltd.
Claims (2)
ロム粉末との混合粉を容器内に充填した後、不活性雰囲
気下において銅の融点以上の温度で加熱して銅−クロム
インゴットを得、この銅−クロムインゴット上に溶浸用
銅を設置し加熱して溶浸用銅を銅−クロムインゴットの
空隙に溶浸させることを特徴とする銅−クロム電極材料
の製造方法。(1) After filling a container with a mixed powder of copper powder and chromium powder with a particle size of 60% or less of 50 μm or less, the mixture is heated at a temperature above the melting point of copper in an inert atmosphere to form a copper-chromium ingot. A method for producing a copper-chromium electrode material, characterized in that copper for infiltration is placed on the copper-chromium ingot and heated to infiltrate the copper for infiltration into the voids of the copper-chromium ingot.
ロム粉末との混合粉を容器内に充填し、その上に溶浸用
銅を設置し、不活性雰囲気下において銅の融点以上の温
度で加熱することを特徴とする銅−クロム電極材料の製
造方法。(2) Fill a container with a mixed powder of copper powder and chromium powder with a particle size of 60% or less of 50 μm or less, place copper for infiltration on top of the mixed powder, and place the copper powder on top of it. A method for producing a copper-chromium electrode material, characterized by heating at a certain temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27539590A JPH04154017A (en) | 1990-10-16 | 1990-10-16 | Manufacture of copper/chrome electrode material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27539590A JPH04154017A (en) | 1990-10-16 | 1990-10-16 | Manufacture of copper/chrome electrode material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04154017A true JPH04154017A (en) | 1992-05-27 |
Family
ID=17554904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27539590A Pending JPH04154017A (en) | 1990-10-16 | 1990-10-16 | Manufacture of copper/chrome electrode material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04154017A (en) |
-
1990
- 1990-10-16 JP JP27539590A patent/JPH04154017A/en active Pending
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