JPH0416552B2 - - Google Patents

Info

Publication number
JPH0416552B2
JPH0416552B2 JP57107335A JP10733582A JPH0416552B2 JP H0416552 B2 JPH0416552 B2 JP H0416552B2 JP 57107335 A JP57107335 A JP 57107335A JP 10733582 A JP10733582 A JP 10733582A JP H0416552 B2 JPH0416552 B2 JP H0416552B2
Authority
JP
Japan
Prior art keywords
sno
film
etching
hydrogen
hcl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57107335A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58224171A (ja
Inventor
Toshoshi Nagatsuka
Isamu Motojima
Kenichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP57107335A priority Critical patent/JPS58224171A/ja
Publication of JPS58224171A publication Critical patent/JPS58224171A/ja
Publication of JPH0416552B2 publication Critical patent/JPH0416552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Weting (AREA)
JP57107335A 1982-06-22 1982-06-22 酸化錫膜のエツチング法 Granted JPS58224171A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57107335A JPS58224171A (ja) 1982-06-22 1982-06-22 酸化錫膜のエツチング法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57107335A JPS58224171A (ja) 1982-06-22 1982-06-22 酸化錫膜のエツチング法

Publications (2)

Publication Number Publication Date
JPS58224171A JPS58224171A (ja) 1983-12-26
JPH0416552B2 true JPH0416552B2 (de) 1992-03-24

Family

ID=14456437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57107335A Granted JPS58224171A (ja) 1982-06-22 1982-06-22 酸化錫膜のエツチング法

Country Status (1)

Country Link
JP (1) JPS58224171A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976396A (en) 1998-02-10 1999-11-02 Feldman Technology Corporation Method for etching
DE102017121228A1 (de) * 2017-09-13 2019-03-14 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Oberflächenbehandlung einer Probe die mindestens eine Oberfläche eines Metalloxids aufweist und Metalloxid mit behandelter Oberfläche

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921688A (de) * 1972-06-23 1974-02-26

Also Published As

Publication number Publication date
JPS58224171A (ja) 1983-12-26

Similar Documents

Publication Publication Date Title
EP0001456B1 (de) Verfahren zur Entfernung von Quecksilber aus Gasen die Quecksilberdampf enthalten
JP2023126320A (ja) 次亜塩素酸イオンを含む半導体ウェハの処理液
US2245219A (en) Etching material
JPH0416552B2 (de)
JPWO2008026542A1 (ja) エッチング液及びエッチング方法
CN100512951C (zh) 铟吸附剂以及铟分离方法
US4673521A (en) Process for regenerating solder stripping solutions
JPH09295833A (ja) フロートガラス基板の平坦化方法
JPS6254849B2 (de)
US4298578A (en) Leach method including means to protect ion exchange resin
US2204234A (en) Treatment of hydrocarbon oils
JPS6134125A (ja) 銀の回収方法
JPH01315489A (ja) 炭化水素系油中の微量水銀類の除去方法
JPS5877598A (ja) 透明導電膜のエッチング方法
JPS6233545A (ja) 発火防止処理をされたラネ−金属の陰極
JP2006005259A (ja) 有機物除去方法
JP3025576B2 (ja) 酸洗液の循環使用方法
JPS58136786A (ja) 隔膜式電解還元方法
US2390868A (en) Process for removing copper compounds from copper-sweetened hydrocarbon oil
JPH0280528A (ja) イリジウムを含有する塩酸酸性溶液からのＡｇの除去方法
US4495152A (en) Leach apparatus including means to protect ion exchange resin
Hedges et al. LXXV.—The periodic dissolution of metals in certain reagents
WO2015093297A1 (ja) 電解エッチング方法及び電解エッチング液
JPS6356649B2 (de)
SU564328A1 (ru) Раствор дл электрохимического травлени металлов