JPH04192249A - Mass spectrometry method for secondary ion - Google Patents

Mass spectrometry method for secondary ion

Info

Publication number
JPH04192249A
JPH04192249A JP2323534A JP32353490A JPH04192249A JP H04192249 A JPH04192249 A JP H04192249A JP 2323534 A JP2323534 A JP 2323534A JP 32353490 A JP32353490 A JP 32353490A JP H04192249 A JPH04192249 A JP H04192249A
Authority
JP
Japan
Prior art keywords
sample
voltage
mass spectrometry
secondary ions
secondary ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2323534A
Other languages
Japanese (ja)
Inventor
Yoichi Yamamoto
陽一 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP2323534A priority Critical patent/JPH04192249A/en
Publication of JPH04192249A publication Critical patent/JPH04192249A/en
Pending legal-status Critical Current

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  • Analysing Materials By The Use Of Radiation (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Electron Tubes For Measurement (AREA)

Abstract

PURPOSE:To take in secondary ions within the incident angle of a maximum transfer lens, and thereby enhance resolving power in the direction of depth by allowing both applied voltage to a sample and voltage to be applied to a secondary pull-out lens to be variable. CONSTITUTION:Primary ion beams (I) are radiated onto a sample 1. When the suitable level of positive voltage 18 applied to the sample 1 from a sample applying voltage source 2, and when the suitable level of negative voltage is applied to an electrode 3 from a pull-out voltage source 4, secondary ions are focused in a main slit 6 by means of a transfer lens 5, the energy and the mass of the secondary ions passing through the hole of the main slit 6 are separated by means of a mass spectrometry unit 7, so that they are thereby detected by a secondary ion detector 9 via a slit 8. The detected signal is processed by a signal processing means 10, so that the mass spectrum of the processed one is indicated on a display means 11. The voltage sources 2 and 4 are regulated by an operator while being closely watched in such a way that spectrum strength becomes maximum.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、深さ方向の分解能を向上させた二次イオン質
量分析方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a secondary ion mass spectrometry method with improved resolution in the depth direction.

[従来の技術] 試料の元素分析等を行う装置に二次イオン質量分析装置
がある。この様な装置では、イオン源からのイオンビー
ムを集束レンズで集束し、偏向器により該イオンビーム
を試料上の所定の箇所に照射する。該照射により該試料
から発生した二次イオンを引出し電極により引出し、質
量分析ユニットに入れる。そして、該ユニットによりエ
ネルギー分離及び質量分離されたイオンビームを二次イ
オン検出器で検出し、信号処理手段により各種処理して
表示手段に送る。その結果、該表示手段に試料特有のマ
ススペクトルを表示する。
[Prior Art] A secondary ion mass spectrometer is an apparatus for performing elemental analysis of a sample. In such an apparatus, an ion beam from an ion source is focused by a focusing lens, and a deflector irradiates the ion beam onto a predetermined location on a sample. Secondary ions generated from the sample by the irradiation are extracted by an extraction electrode and introduced into a mass spectrometry unit. The ion beam energy-separated and mass-separated by the unit is detected by a secondary ion detector, processed in various ways by a signal processing means, and sent to a display means. As a result, a mass spectrum unique to the sample is displayed on the display means.

[発明が解決しようとする課題] さて、この様な二次イオン質量分析装置において、深さ
方向の分解能を向上させる為に、例えば、試料を傾斜さ
せて、−次イオンビームの試料への照射角を小さくして
いるか、これだけでは十分とは言えない。
[Problems to be Solved by the Invention] Now, in order to improve the resolution in the depth direction in such a secondary ion mass spectrometer, for example, the sample is tilted and the -order ion beam is irradiated onto the sample. Either the corners are made smaller or this alone is not enough.

本発明はこの様な点に鑑みて成されたもので、深さ方向
の分解能を更に向上させる新規な二次イオン質量分析方
法に関する。
The present invention has been made in view of these points, and relates to a novel secondary ion mass spectrometry method that further improves the resolution in the depth direction.

[課題を解決するための手段〕 本発明は、試料に一次イオンビームを照射し、該試料か
ら放出される二次イオンを測定する二次イオン質量分析
方法において、試料に印加する電圧と、試料からの二次
イオンを引き出す為の引き出しレンズに印加する電圧を
可変と成し、該試料からの二次イオンビーム強度か最大
となる様にした。
[Means for Solving the Problems] The present invention provides a secondary ion mass spectrometry method in which a sample is irradiated with a primary ion beam and secondary ions emitted from the sample are measured. The voltage applied to the extraction lens for extracting secondary ions from the sample was made variable so that the intensity of the secondary ion beam from the sample was maximized.

[作用コ 図に示す様に、試料1に一次イオンビームIを照射する
事により、該試料から二次イオンビームが発生する。該
試料と質量分析ユニット7の間には、転送レンズ5とメ
インスリット6か配置されており、該転送レンズは前記
二次イオンビームの仮想的光源を前記メインスリット6
上に結像しており、該メインスリット6は該仮想光源像
の径を決定している。この時、質量分析ユニット7の二
次イオン取り込み角αは分解能が最も良くなる様に決め
られている。従って、二次イオンの転送レンズ5への入
射角度α。を該質量分析ユニットの二次イオン取り込み
角αに一致させることで、最大の検出効率が得られる。
[Operation As shown in the diagram, by irradiating the sample 1 with the primary ion beam I, a secondary ion beam is generated from the sample. A transfer lens 5 and a main slit 6 are arranged between the sample and the mass spectrometry unit 7, and the transfer lens directs the virtual light source of the secondary ion beam to the main slit 6.
The main slit 6 determines the diameter of the virtual light source image. At this time, the secondary ion uptake angle α of the mass spectrometry unit 7 is determined so as to provide the best resolution. Therefore, the incident angle α of the secondary ions to the transfer lens 5 is. The maximum detection efficiency can be obtained by matching the secondary ion uptake angle α of the mass spectrometry unit.

該試料表面からの二次イオンの放出角度α。は、試料1
に印加する電圧V+(試料印加電圧源2の電圧)、試料
1からの二次イオンを引出す為の引出し電圧v2 (引
出電圧源4の電圧)、試料1からの二次イオンの放出エ
ネルギーφ及び二次イオンの放出角度α1の関数で変化
する。そこで、前記試料印加電圧V、と引出し電圧■2
をコントロールする事により、試料1から放出される二
次イオンを出来るだけ多く転送レンズ5への入射角度α
。内に取り込める様にすれば、質量分析7系への検出効
率か最も良くなり、結果的に、深さ方向の分解能かより
向上する。
Emission angle α of secondary ions from the sample surface. is sample 1
Voltage V+ (voltage of sample applied voltage source 2) applied to sample 1, extraction voltage v2 (voltage of extraction voltage source 4) for extracting secondary ions from sample 1, emission energy φ of secondary ions from sample 1, and It changes as a function of the secondary ion emission angle α1. Therefore, the sample applied voltage V and the extraction voltage ■2
By controlling the incident angle α of the secondary ions emitted from the sample 1 to the transfer lens 5 as much as possible
. If it can be taken into the system, the detection efficiency for the mass spectrometry system 7 will be the best, and as a result, the resolution in the depth direction will be improved.

[実施例〕 図は本発明の一実施例として示した二次イオン質量分析
装置の概略図である。
[Example] The figure is a schematic diagram of a secondary ion mass spectrometer shown as an example of the present invention.

図中1は試料、2は試料印加電圧源、3は引出し電極、
4は引出し電圧源、5は転送レンズ、6はメインスリッ
ト、7は質量分析ユニット、8はスリット、9は二次イ
オン検出器、10は信号処理手段、11は表示手段であ
る。前記試料印加電圧源2及び引出し電圧源4は共に可
変電圧源である。
In the figure, 1 is a sample, 2 is a voltage source applied to the sample, 3 is an extraction electrode,
4 is an extraction voltage source, 5 is a transfer lens, 6 is a main slit, 7 is a mass spectrometry unit, 8 is a slit, 9 is a secondary ion detector, 10 is a signal processing means, and 11 is a display means. Both the sample application voltage source 2 and the extraction voltage source 4 are variable voltage sources.

この様な装置において、−次イオンビーム照射系(図示
せず)からの−次イオンビーム1を試料上に照射する。
In such an apparatus, a sample is irradiated with a -order ion beam 1 from a -order ion beam irradiation system (not shown).

今、例えば、該試料から+イオンを引き出す場合、試料
印加電圧源2から適宜な大きさの十電圧を印加する。そ
して、引出し電圧源4から引出し電極3に適宜な大きさ
の一電圧を印加する。すると、前記試料の一次イオンビ
ーム照射箇所から二次イオンが引出される。転送レンズ
5は、前記試料からの二次イオンの仮想光源をメインス
リット6上に結像する為のもので、前記試料から引き出
された二次イオンは該転送レンズによりメインスリット
6上に集束される。該スリットの孔を通過した二次イオ
ンは、エネルギー分離用の電場発生手段と質量分離用の
磁場発生手段から成る質量分析ユニット7において、エ
ネルギー分離及び質量分離された二次イオンビームはス
リット8を介して二次イオン検8器9に検aされる。
Now, for example, when extracting + ions from the sample, ten voltages of an appropriate magnitude are applied from the sample application voltage source 2. Then, a voltage of an appropriate magnitude is applied from the extraction voltage source 4 to the extraction electrode 3. Then, secondary ions are extracted from the primary ion beam irradiation area of the sample. The transfer lens 5 is used to image a virtual light source of secondary ions from the sample onto the main slit 6, and the secondary ions extracted from the sample are focused onto the main slit 6 by the transfer lens. Ru. The secondary ions that have passed through the slit are passed through a slit 8 in a mass spectrometry unit 7 that includes an electric field generating means for energy separation and a magnetic field generating means for mass separation. The ions are detected by a secondary ion detector 9 through the secondary ion detector 8.

該検出された二次イオンビームは信号処理手段10で各
種処理され表示手段11に送られる。その結果、該表示
手段に試料特有のマススペクトルが表示される。さて、
オペレータは、該表示手段に表示されたマススペクトル
を観察しながら、該スペクトルの強度、即ち、試料から
引出され、前記質量分析ユニットに入射した二次イオン
に基づくスペクトルの強度が最大になる様に、前記試料
印加電圧源2の出力電圧の大きさ、即ち、試料1に印加
される電圧の大きさを調整する。該調整後、同様に前記
マススペクトルの強度か最大になる様に、前記引出し電
圧源4の出力電圧の大きさ、即ち、引出し電極3に印加
される電圧の大きさを調整する。この試料印加電圧の大
きさ調整と引出し電圧の大きさ調整を何回か繰り返し、
前記マススペクトルが最大になる様にする。この様な調
整により、試料から放出される二次イオンを最大限、転
送レンズへの入射角度α。内に取り込め、質量分析系へ
の検出効率が最も良くなり、結果的に、深さ方向の分解
能がより向上する。
The detected secondary ion beam is subjected to various processing by a signal processing means 10 and sent to a display means 11. As a result, a mass spectrum unique to the sample is displayed on the display means. Now,
While observing the mass spectrum displayed on the display means, the operator adjusts the intensity of the spectrum, that is, the intensity of the spectrum based on the secondary ions extracted from the sample and incident on the mass spectrometry unit, to the maximum. , adjusts the magnitude of the output voltage of the sample application voltage source 2, that is, the magnitude of the voltage applied to the sample 1. After this adjustment, the magnitude of the output voltage of the extraction voltage source 4, that is, the magnitude of the voltage applied to the extraction electrode 3, is similarly adjusted so that the intensity of the mass spectrum becomes maximum. Repeat this adjustment of the sample applied voltage and the extraction voltage several times,
The mass spectrum is maximized. This adjustment maximizes the secondary ions emitted from the sample by adjusting the incident angle α to the transfer lens. The detection efficiency in the mass spectrometry system is the highest, and as a result, the resolution in the depth direction is further improved.

[効果コ 本発明によれば、試料に印加する電圧と、試料からの二
次イオンを引き出す為の引き出しレンズに印加される電
圧を可変と成し、該試料からの二次イオンビーム強度が
最大となる様にしているので、試料から放出される二次
イオンを最大限、転送レンズへの入射角度α。内に取り
込め、質量分析系への検出効率か最も良くなり、結果的
に、深さ方向の分解能がより向上する。
[Effects] According to the present invention, the voltage applied to the sample and the voltage applied to the extraction lens for extracting secondary ions from the sample are made variable, so that the intensity of the secondary ion beam from the sample is maximized. Therefore, the incident angle α to the transfer lens can be adjusted to maximize the secondary ions emitted from the sample. The detection efficiency for the mass spectrometry system is the best, and as a result, the resolution in the depth direction is further improved.

【図面の簡単な説明】[Brief explanation of the drawing]

添付図は本発明の一実施例として示した二次イオン質量
分析装置の概略図である。 1:試料  2:試料印加電圧源  3:引出し電極 
 4:引出し電圧源  5:転送レンズ  6:メイン
スリット  7:質量分析ユニット  8ニスリツト 
 9ニニ次イオン検出器10:信号処理手段  11:
表示手段特許出願人  日本電子株式会社
The attached figure is a schematic diagram of a secondary ion mass spectrometer shown as an embodiment of the present invention. 1: Sample 2: Sample applied voltage source 3: Extraction electrode
4: Extraction voltage source 5: Transfer lens 6: Main slit 7: Mass spectrometry unit 8 Nislit
9th order ion detector 10: Signal processing means 11:
Display means patent applicant JEOL Ltd.

Claims (1)

【特許請求の範囲】[Claims] 試料に一次イオンビームを照射し、該試料から放出され
る二次イオンを測定する二次イオン質量分析方法におい
て、試料に印加する電圧と、試料からの二次イオンを引
き出す為の引き出しレンズに印加する電圧を可変と成し
、該試料からの二次イオンビーム強度が最大となる様に
該二つの電圧を調整する様にした二次イオン質量分析方
法。
In a secondary ion mass spectrometry method in which a sample is irradiated with a primary ion beam and the secondary ions emitted from the sample are measured, the voltage applied to the sample and the extraction lens used to extract the secondary ions from the sample are A secondary ion mass spectrometry method in which the voltage applied to the sample is made variable, and the two voltages are adjusted so that the intensity of the secondary ion beam from the sample is maximized.
JP2323534A 1990-11-27 1990-11-27 Mass spectrometry method for secondary ion Pending JPH04192249A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2323534A JPH04192249A (en) 1990-11-27 1990-11-27 Mass spectrometry method for secondary ion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2323534A JPH04192249A (en) 1990-11-27 1990-11-27 Mass spectrometry method for secondary ion

Publications (1)

Publication Number Publication Date
JPH04192249A true JPH04192249A (en) 1992-07-10

Family

ID=18155777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2323534A Pending JPH04192249A (en) 1990-11-27 1990-11-27 Mass spectrometry method for secondary ion

Country Status (1)

Country Link
JP (1) JPH04192249A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008232838A (en) * 2007-03-20 2008-10-02 Fujitsu Ltd Depth element concentration analysis method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008232838A (en) * 2007-03-20 2008-10-02 Fujitsu Ltd Depth element concentration analysis method

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